Infineon-Technologies-BCP-49-H6327
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BCP49
NPN Silicon Darlington Transistors
•
For general AF applications
•
High collector current
•
High current gain
4
3
2
1
1)
•
Pb-free (RoHS compliant) package
•
Qualified according AEC Q101
C(2,4)
B(1)
E(3)
EHA00009
Type
Marking
Pin Configuration
Package
BCP49
BCP 49
1 = B
2 = C
3 = E
4 = C
SOT223
Maximum Ratings
Parameter
Symbol
Values
60
Unit
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
DC collector current
Peak collector current
Base current
V
V
V
V
CEO
CBO
EBO
80
10
500
800
100
200
1.5
mA
mA
I
C
I
CM
I
B
Peak base current
I
BM
W
Total power dissipation,
T
= 124 °C
P
tot
S
150
°C
Junction temperature
Storage temperature
T
j
T
-65 … 150
stg
Thermal Resistance
2)
Junction – soldering point
R
≤
17
K/W
thJS
1
Pb-containing package may be available upon special request
2
For calculation of
R
please refer to Application Note Thermal Resistance
thJA
2007-04-27
1
BCP49
Electrical Characteristics
at
T
= 25°C, unless otherwise specified.
A
Parameter
Symbol
Values
typ. max.
Unit
min.
60
DC Characteristics
–
–
–
–
–
–
–
–
–
–
–
–
–
V
Collector-emitter breakdown voltage
V
V
V
(BR)CEO
(BR)CBO
(BR)EBO
I
= 1 mA,
I
= 0
C
B
80
Collector-base breakdown voltage
I
= 100 µA,
I
= 0
C
E
10
Emitter-base breakdown voltage
I
= 10 µA,
I
= 0
E
C
–
100 nA
Collector cutoff current
= 60 V,
I
= 0
I
CBO
V
CB
E
–
10
µA
Collector cutoff current
= 60 V,
I
= 0 ,
T
= 150 °C
I
CBO
V
CB
E
A
–
100 nA
Emitter cutoff current
= 5 V,
I
= 0
I
EBO
V
EB
C
2000
4000
10000
2000
–
–
–
–
DC current gain
1)
I
= 100 µA,
V
= 1 V
h
–
FE
FE
FE
FE
C
CE
DC current gain
1)
I
= 10 mA,
V
= 5 V
h
h
h
C
CE
DC current gain
1)
I
= 100 mA,
V
= 5 V
C
CE
DC current gain
1)
I
= 500 mA,
V
= 5 V
C
CE
1) Pulse test: t
≤
300
µ
s, D = 2%
2007-04-27
2
BCP49
Electrical Characteristics
at
T
= 25°C, unless otherwise specified.
A
Parameter
Symbol
Values
typ. max.
Unit
min.
DC Characteristics
–
–
–
–
1
V
Collector-emitter saturation voltage1)
V
V
CEsat
BEsat
I
= 100 mA,
I
= 0.1 mA
C
B
1.5
Base-emitter saturation voltage
1)
I
= 100 mA,
I
= 0.1 mA
C
B
AC Characteristics
–
–
200
6.5
–
–
MHz
pF
Transition frequency
f
T
I
= 50 mA,
V
= 5 V,
f
= 100 MHz
C
CE
Collector-base capacitance
= 10 V,
f
= 1 MHz
C
cb
V
CB
1) Pulse test: t
≤
300
µ
s, D = 2%
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3
BCP49
Total power dissipation
P
=
f
(
T
)
Collector cutoff current
I
=
f
(
T
)
tot
S
CBO
A
V
=
V
CEmax
CB
BCP 29/49
EHP00251
10
4
nA
1650
mW
Ι
CBO
1350
1200
1050
900
750
600
450
300
150
0
max
10
3
10
2
10
1
10
0
typ
0
50
100
150
˚C
0
15 30 45 60 75 90
105 120
150
°C
T
T
A
S
Transition frequency
f
=
f
(
I
)
Permissible pulse load
T
C
V
= 5V
P
/
P
=
f
(
t
)
CE
totmax
totDC
p
BCP 29/49
EHP00252
BCP 29/49
EHP00253
1
0
3
1
0
3
5
P
to
t
m
ax
P
to
t
D
C
t
p
t
p
T
f
T
D
=
MHz
T
1
0
2
5
D
0
=
0.005
0.01
0.02
0.05
0.1
1
0
2
5
0.2
0.5
1
0
1
5
1
0
1
1
0
0
1
0
0
1
0
1
1
0
2
mA
Ι
C
1
0
3
1
0
-6
1
0
-5
1
0
-4
1
0
-3
1
0
-2
s
1
0
0
t
p
2007-04-27
4
BCP49
DC current gain
h
=
f
(
I
)
Collector-emitter saturation voltage
FE
C
V
= 5V
I
=
f
(V
),
h
= 1000
CE
C
CEsat
FE
BCP 29/49
EHP00256
BCP 29/49
EHP00255
10
3
mA
1
0
6
5
Ι
C
h
FE
150
˚C
25
˚C
-50
˚C
125
˚C
25
˚C
10
2
5
1
0
5
5
-55
˚C
1
0
4
5
10
1
5
1
0
3
10
0
1
0
-1
1
0
0
1
0
1
1
0
2
mA 1
0
3
0
0.5
1.0
1.5
V
Ι
C
V
CEsat
Collector-base capacitance
C
=
ƒ
(
V
)
Base-emitter saturation voltage
cb
CB
Emitter-base capacitance
C
=
ƒ
(
V
)
I
=
f
(
V
),
h
= 1000
eb
EB
C
BEsat
FE
BCP 29/49
EHP00258
10
3
mA
160
pF
Ι
C
150
˚C
25
˚C
120
100
80
60
40
20
0
-50
˚C
10
2
5
10
1
5
CEB
CCB
10
0
0
1.0
2.0
3.0
V
0
4
8
12
16
20
24
28
34
V
VCB0(VEB0
V
BEsat
2007-04-27
5
Package SOT223
BCP49
Package Outline
±0.1
1.6
±0.2
6.5
A
±0.1
0.1 MAX.
3
B
4
3
1
2
2.3
±0.1
0.7
4.6
0…10˚
M
0.25
A
M
0.25
B
Foot Print
3.5
1.2 1.1
Marking Layout (Example)
Manufacturer
2005, 24 CW
Date code (YYWW)
BCP52-16
T
y
pe code
Pin 1
Packing
Reel ø180 mm = 1.000 Pieces/Reel
Reel ø330 mm = 4.000 Pieces/Reel
0.3 MAX.
8
1.75
6.8
Pin 1
2007-04-27
6
BCP49
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 2006.
All Rights Reserved.
Attention please!
The information given in this data sheet shall in no event be regarded as a guarantee
of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any
examples or hints given herein, any typical values stated herein and/or any information
regarding the application of the device, Infineon Technologies hereby disclaims any
and all warranties and liabilities of any kind, including without limitation warranties of
non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices
Warnings
Due to technical requirements components may contain dangerous substances.
For information on the types in question please contact your nearest
Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or
systems with the express written approval of Infineon Technologies, if a failure of
such components can reasonably be expected to cause the failure of that
life-support device or system, or to affect the safety or effectiveness of that
device or system.
Life support devices or systems are intended to be implanted in the human body,
or to support and/or maintain and sustain and/or protect human life. If they fail,
it is reasonable to assume that the health of the user or other persons
may be endangered.
2007-04-27
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