Infineon-Technologies-BCR-555-E6433

Part #Infineon-Technologies-BCR-555-E6433
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Infineon-Technologies-BCR-555-E6433
BCR555  
PNP Silicon Digital Transistor  
•
Built in bias resistor (
R
= 2.2 k
Ω
,
R
= 10
 
k
Ω
)  
•
Pb-free (RoHS compliant) package  
•
Qualified according AEC Q101  
1
2
2
1
3
C
3
R

1  

R

2  

1
2
B
E
EHA07183  
Type  
BCR555  
Marking  
XDs  
Pin Configuration  
Package  
SOT23  
1=B  
2=E  
3=C  
Maximum Ratings  
Parameter  
Symbol  
Value  
Unit  
50  
50  
V
Collector-emitter voltage  
Collector-base voltage  
Input forward voltage  
Input reverse voltage  
Collector current  
V
V
V
V
CEO  
CBO  
i(fwd)  
i(rev)  
20  
5
500  
330  
mA  
mW  
I
C
Total power dissipation-  
P
tot  
T
≤
79 °C  
S
150  
°C  
Junction temperature  
Storage temperature  
T
j
T
-65 … 150  
stg  
Thermal Resistance  
Parameter  
Junction – soldering point  
Symbol  
Value  
≤
215  
Unit  
K/W  
1)  
R
thJS  
1
For calculation of
R  
please refer to Application Note AN077 (Thermal Resistance Calculation)  
thJA  
2011-07-28  
1

BCR555  
Electrical Characteristics
at
T
= 25°C, unless otherwise specified  
A
Parameter  
Symbol  
Values  
typ. max.  
Unit  
min.  
DC Characteristics  
Collector-emitter breakdown voltage  
50  
–
–
–
V
V
V
(BR)CEO  
I
= 100 µA,
I
= 0  
C
B
Collector-base breakdown voltage  
I
= 10 µA,
I
= 0  
50  
–
–
–
–
–
(BR)CBO  
C
E
Collector-base cutoff current  
= 50 V,
I
= 0  
I
100 nA  
0.65 mA  
CBO  
V
CB  
E
–
Emitter-base cutoff current  
= 5 V,
I
= 0  
I
EBO  
V
EB  
C
70  
–
–
DC current gain-  
I
= 50 mA,
V
= 5 V  
h
FE  
C
CE  
1)  
Collector-emitter saturation voltage  
I
= 50 mA,
I
= 2.5 mA  
V
–
–
–
–
0.3  
1
V
CEsat  
i(off)  
C
B
Input off voltage  
I
= 100 µA,
V
= 5 V  
V
V
0.4  
0.5  
C
CE  
Input on voltage  
1.4  
i(on)  
I
= 10 mA,
V
= 0.3 V  
C
CE  
Input resistor  
R
1.5  
2.2  
2.9 k
Ω  
1
Resistor ratio  
R
/
R  
0.19  
0.22  
0.24 –  
1
2
AC Characteristics  
Transition frequency  
–
150  
–
MHz  
f
T
I
= 50 mA,
V
= 5 V,
f
= 100 MHz  
C
CE  
1
Pulse test: t < 300µs; D < 2%  
2011-07-28  
2

BCR555  
DC current gain
h
=
ƒ
(
I
)  
Collector-emitter saturation voltage  
FE  
C
V
= 5 V (common emitter configuration)  
V
=
ƒ
(
I
),
I /I
 
= 20  
CE  
CEsat C
 
C B  
10

3  

0.55  
V
0.45  
0.4  
10

2  

-40 °C  
0.35  
0.3  
-25 °C  
25 °C  
85 °C  
125 °C  
10

1  

0.25  
0.2  
-40 °C  
-25 °C  
25 °C  
10

0  

0.15  
0.1  
85 °C  
125 °C  
0.05  
0
10

-1  

10

-4  

10

-3  

10

-2  

10

-1  

10

0  

10

-3  

10

-2  

10

-1  

10

0  

A
A
I
I
C
C
Input on Voltage
V
i  
=
ƒ
(
I
)  
Input off voltage
V  
=
ƒ
(
I
)  
i(off) C  
(on)  
C
V
= 0.3V (common emitter configuration)  
V
= 5V (common emitter configuration)  
CE  
CE  
10

1  

10

2  

V
-40 °C  
-25 °C  
V
25 °C  
85 °C  
125 °C  
-40 °C  
10

1  

-25 °C  
25 °C  
85 °C  
125 °C  
10

0  

10

0  

10

-1  

10

-1  

10

-4  

10

-3  

10

-2  

10

-1  

10

0  

10

-5  

10

-4  

10

-3  

10

-2  

A
A
I
I
C
C
2011-07-28  
3

BCR555  
Total power dissipation
P
=
ƒ
(
T
)  
Permissible Pulse Load
R  
=
ƒ
(
t
)  
tot  
S
thJS  
p
10

3  

K/W  
400  
mW  
10

2  

300  
250  
200  
150  
100  
50  
10

1  

0.5  
0.2  
0.1  
0.05  
0.02  
0.01  
0.005  
D = 0  
10

0  

10

-1  

0
10

-6  

10

-5  

10

-4  

10

-3  

10

-2  

10

0  

°C  
s
0
20  
40  
60  
80  
100 120  
150  
T
t
p
S
Permissible Pulse Load  
P
/
P  
=
ƒ
(
t
)  
totmax totDC  
p
10

4  

–
10

3  

10

2  

10

1  

10

0  

D = 0  
0.005  
0.01  
0.02  
0.05  
0.1  
0.2  
0.5  
10

-6  

10

-5  

10

-4  

10

-3  

10

-2  

10

0  

s
t
p
2011-07-28  
4

Package SOT23  
BCR555  
Package Outline  
0.1  
1
0.1 MAX.  
0.1  
2.9  
B
3
1
2
1)  
+0.1  
0.4  
A
-0.05  
0.08…0.15  
0…8˚  
C
0.95  
1.9  
0.25 B
 
C  
1) Lead width can be 0.6 max. in dambar area  
M
M
0.2  
A
Foot Print  
0.8  
0.8  
1.2  
Marking Layout (Example)  
Manufacturer  
2005, June  
Date code (YM)  
EH  
s
Pin 1  
BCW66  
T
y
pe code  
Standard Packing  
Reel ø180 mm = 3.000 Pieces/Reel  
Reel ø330 mm = 10.000 Pieces/Reel  
4
0.2  
0.9  
1.15  
3.15  
Pin 1  
2011-07-28  
5

BCR555  
Edition 2009-11-16  
Published by  
Infineon Technologies AG  
81726 Munich, Germany  
2009 Infineon Technologies AG  
All Rights Reserved.  
Legal Disclaimer  
The information given in this document shall in no event be regarded as a guarantee  
of conditions or characteristics. With respect to any examples or hints given herein,  
any typical values stated herein and/or any information regarding the application of  
the device, Infineon Technologies hereby disclaims any and all warranties and  
liabilities of any kind, including without limitation, warranties of non-infringement of  
intellectual property rights of any third party.  
Information  
For further information on technology, delivery terms and conditions and prices,  
please contact the nearest Infineon Technologies Office (
<www.infineon.com>
).  
Warnings  
Due to technical requirements, components may contain dangerous substances.  
For information on the types in question, please contact the nearest Infineon  
Technologies Office.  
Infineon Technologies components may be used in life-support devices or systems  
only with the express written approval of Infineon Technologies, if a failure of such  
components can reasonably be expected to cause the failure of that life-support  
device or system or to affect the safety or effectiveness of that device or system.  
Life support devices or systems are intended to be implanted in the human body or  
to support and/or maintain and sustain and/or protect human life. If they fail, it is  
reasonable to assume that the health of the user or other persons may be  
endangered.  
2011-07-28  
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