Infineon-Technologies-BCV62BE6433HTMA1

BCV62  

PNP Silicon Double Transistor  

•

To be used as a current mirror  

3

•

Good thermal coupling and

V

matching  

BE  

2

4

•

High current gain  

1

•

Low collector-emitter saturation voltage  

•

Pb-free (RoHS compliant) package  

•

Qualified according AEC Q101  

C1 (2)  

Tr.1  

C2 (1)  

Tr.2  

E1 (3)  

E2 (4)  

EHA00013  

Type  

Marking  

3Js  

3Ks  

Pin Configuration  

Package  

BCV62A  

BCV62B  

BCV62C  

1 = C2

 

2 = C1

 

3 = E1

 

4 = E2

 

SOT143  

1 = C2

 

2 = C1

 

3 = E1

 

4 = E2

 

SOT143  

1 = C2

 

2 = C1

 

3 = E1

 

4 = E2

 

SOT143  

3Ls  

Maximum Ratings  

Parameter  

Symbol  

Value  

Unit  

30  

V

Collector-emitter voltage  

(transistor T1)  

V

V

V

CEO  

CBO  

EBS  

30  

Collector-base voltage (open emitter)  

(transistor T1)  

6

Emitter-base voltage  

100  

200  

200  

300  

150  

mA  

DC collector current  

Peak collector current  

Base peak current (transistor T1)  

Total power dissipation,

T

= 99 °C  

Junction temperature  

Storage temperature  

I

C

I

CM  

I

BM  

mW  

°C  

P

T

j

T

S

tot  

-65 … 150  

stg  

Thermal Resistance  

Junction – soldering point  

1)  

R

≤

170  

K/W  

thJS  

1

For calculation of

R  

please refer to Application Note AN077 (Thermal Resistance Calculation)  

thJA  

2011-07-25  

1

BCV62  

Electrical Characteristics

at

T

= 25°C, unless otherwise specified  

A

Parameter  

Symbol  

Values  

typ. max.  

Unit  

min.  

30  

30  

6

DC Characteristics of T1  

Collector-emitter breakdown voltage  

–

–

–

–

–

–

–

–

V

V

V

V

(BR)CEO  

I

= 10 mA,

I

= 0  

C

B

Collector-base breakdown voltage  

I

= 10 µA,

I

= 0  

(BR)CBO  

(BR)EBO  

C

E

Emitter-base breakdown voltage  

I

= 10 µA,

I

= 0  

–

E

C

–

15  

5

–

nA  

µA  

–

Collector cutoff current  

= 30 V,

I

= 0  

I

CBO  

V

CB  

E

–

Collector cutoff current  

= 30 V,

I

= 0 ,

T

= 150 °C  

I

CBO  

V

CB  

E

A

100  

DC current gain

 

1)  

I

= 0.1 mA,

V

= 5 V  

h

FE  

FE  

C

CE  

DC current gain

 

1)  

h

I

= 2 mA,

V

= 5 V  

125  

220  

420  

180  

290  

520  

220  

475  

800  

BCV62A  

BCV62B  

BCV62C  

C

CE  

mV  

Collector-emitter saturation voltage1)  

I

= 10 mA,

I

= 0.5 mA  

V

V

V

CEsat  

–

–

75  

250  

300  

650  

C

B

I

= 100 mA,

I

= 5 mA  

C

B

Base-emitter saturation voltage

 

1)  

I

= 10 mA,

I

= 0.5 mA  

BEsat  

–

–

700  

850  

–

–

C

B

I

= 100 mA,

I

= 5 mA  

C

B

Base-emitter voltage

 

1)  

I

= 2 mA,

V

= 5 V  

BE(ON)  

600  

–

650  

–

750  

820  

C

CE  

I

= 10 mA,

V

= 5 V  

C

CE  

1) Pulse test: t

≤

300

µ

s, D = 2%  

2011-07-25  

2

BCV62  

Electrical Characteristics

at

T

= 25°C, unless otherwise specified.  

A

Parameter  

Symbol  

Values  

Unit  

min.  

typ. max.  

DC Characteristics  

V

–

Base-emitter forward voltage  

V

BES  

I

= 10 µA  

0.4  

–

–

–

–

E

I

= 250 mA  

1.8  

E

Matching of transistor T1 and transistor T2  

I

/

I  

C1 C2  

at

I

= 0.5mA and

V  

= 5V  

CE1  

–

–

–

–

–

E2  

T

= 25 °C  

0.7  

0.7  

1.3  

1.3  

A

T

= 150 °C  

A

–

5

–

mA  

Thermal coupling of transistor T1 and  

I

E2  

1)  

transistor T2  

T1:

V

= 5V  

CE  

Maximum current of thermal stability of

I  

C1  

AC characteristics of transistor T1  

Transition frequency  

–

–

–

–

250  

1.5  

8

–

–

–

–

MHz  

pF  

f

T

I

= 10 mA,

V

= 5 V,

f

= 100 MHz  

C

CE  

Collector-base capacitance  

= 10 V,

f

= 1 MHz  

C

cb  

eb  

V

CB  

Emitter-base capacitance  

= 0.5 V,

f

= 1 MHz  

C

F

V

EB  

2

dB  

Noise figure  

I

= 200 µA,

V

= 5 V,

R

= 2 k

Ω

,  

C

CE  

S

f

= 1 kHz,

∆

f = 200 Hz  

Short-circuit input impedance  

I

= 1 mA,

V

= 10 V,

f

= 1 kHz  

–

4.5  

2

–

h

h

h

h

k

Ω  

11e  

12e  

21e  

22e  

C

CE  

-4  

–

100  

–

–

900  

–

Open-circuit reverse voltage transf.ratio  

I

= 1 mA,

V

= 10 V,

f

= 1 kHz  

10  

C

CE  

–

Short-circuit forward current transf.ratio  

I

= 1 mA,

V

= 10 V,

f

= 1 kHz  

–

C

CE  

30  

Open-circuit output admittance  

I

= 1 mA,

V

= 10 V,

f

= 1 kHz  

µ

S  

C

CE  

1) Witout emitter resistor. Device mounted on alumina 15mm x 16.5mm x 0.7mm  

2011-07-25  

3

BCV62  

Test circuit for current matching  

A

Ι

C1  

2

1

V

CE1  

T1  

T2  

Ι

…  

3

4

V

CO  

V

CO  

EHN00003  

Note: Voltage drop at contacts:

V  

< 2/3

V

= 16mV  

T

CO  

Characteristic for determination of

V  

at specified

R

range with  

E

CE1  

I

as parameter under condition of

I

/

I

= 1.3  

E2  

C1 E2  

A

Ι

C1  

2

1

T2  

4

V

CE1  

Ι

T1  

…  

3

R

E  

R

E  

EHN00004  

Note: BCV62 with emitter resistors  

2011-07-25  

4

BCV62  

Collector-base capacitance

C

=

ƒ

(

V

)  

Total power dissipation

P

=

f

(

T

)  

cb  

CB  

tot  

S

Emitter-base capacitance

C

=

ƒ

(

V

)  

eb  

EB  

350  

12  

pF  

mW  

10  

9

8

7

6

5

4

3

2

1

0

250  

200  

150  

100  

50  

CEB  

CCB  

0

V

0

4

8

12  

16  

22  

(

V  

0

15 30 45 60 75 90

 

105 120  

150  

°C  

T

S

V

)

CB EB  

Permissible pulse load  

P

/

P  

=

f

(

t

)  

totmax  

totDC  

p

BCV 62  

EHP00941  

1

0

3  

5

P

to

t

m

ax  

P

to

t

D

C  

t

p  

t

p  

T

D

=

T

1

0

2  

5

D

0

=

0.005  

0.01  

0.02  

0.05  

0.1  

0.2  

0.5  

1

0

1  

5

1

0

0  

1

0

-6

1

0

-5

1

0

-4

1

0

-3

1

0

-2  

s

1

0

0  

t

p  

2011-07-25  

5

Package SOT143  

BCV62  

Package Outline  

0.1  

1

0.1  

2.9  

B

1.9  

0.1 MAX.  

4

3

1

2

A

0.2  

0.08…0.1  

5

+0.1  

0.8  

-0.05  

0…8˚  

+0.1  

0.4  

-0.05  

M

M

0.2  

0.25  

B

A

1.7  

Foot Print  

0.8 1.2 0.8  

1.2  

0.8  

0.8  

Marking Layout (Example)  

Manufacturer  

2005, June  

RF s  

Date code (YM)  

Pin 1  

BFP181  

T

y

pe code  

Standard Packing  

Reel ø180 mm = 3.000 Pieces/Reel  

Reel ø330 mm = 10.000 Pieces/Reel  

0.2  

4

3.15  

1.15  

Pin 1  

2011-07-25  

6

BCV62  

Edition 2009-11-16  

Published by  

Infineon Technologies AG  

81726 Munich, Germany  



2009 Infineon Technologies AG  

All Rights Reserved.  

Legal Disclaimer  

The information given in this document shall in no event be regarded as a guarantee  

of conditions or characteristics. With respect to any examples or hints given herein,  

any typical values stated herein and/or any information regarding the application of  

the device, Infineon Technologies hereby disclaims any and all warranties and  

liabilities of any kind, including without limitation, warranties of non-infringement of  

intellectual property rights of any third party.  

Information  

For further information on technology, delivery terms and conditions and prices,  

please contact the nearest Infineon Technologies Office (

<www.infineon.com>

).  

Warnings  

Due to technical requirements, components may contain dangerous substances.  

For information on the types in question, please contact the nearest Infineon  

Technologies Office.  

Infineon Technologies components may be used in life-support devices or systems  

only with the express written approval of Infineon Technologies, if a failure of such  

components can reasonably be expected to cause the failure of that life-support  

device or system or to affect the safety or effectiveness of that device or system.  

Life support devices or systems are intended to be implanted in the human body or  

to support and/or maintain and sustain and/or protect human life. If they fail, it is  

reasonable to assume that the health of the user or other persons may be  

endangered.  

2011-07-25  

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