Infineon-Technologies-BCW-66KG-E6327
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BCW66K
NPN Silicon AF Transistors
•
For general AF applications
•
High current gain
•
Low collector-emitter saturation voltage
•
Complementary type: BCW68 (PNP)
•
Pb-free (RoHS compliant) package
•
Qualified according AEC Q101
2
1
3
Type
Marking
EFs
EGs
Pin Configuration
Package
BCW66KF
BCW66KG
BCW66KH
1=B
1=B
1=B
2=E
2=E
2=E
3=C
3=C
3=C
SOT23
SOT23
SOT23
EHs
Maximum Ratings
Parameter
Symbol
Value
Unit
45
75
5
800
1
V
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
V
V
V
CEO
CBO
EBO
mA
A
I
C
Peak collector current,
t
≤
10 ms
I
p
CM
100
200
500
mA
Base current
Peak base current
Total power dissipation-
I
B
I
BM
mW
°C
P
tot
T
≤
115 °C
S
150
Junction temperature
Storage temperature
T
j
T
-65 … 150
Thermal Resistance
Parameter
Junction – soldering point
Symbol
Value
≤
70
Unit
K/W
1)
R
thJS
2011-09-30
1
BCW66K
Electrical Characteristics
at
T
= 25°C, unless otherwise specified
Parameter
Symbol
Values
typ. max.
Unit
min.
DC Characteristics
Collector-emitter breakdown voltage
45
–
–
–
–
–
–
V
V
V
V
(BR)CEO
(BR)CBO
(BR)EBO
I
= 10 mA,
I
= 0
C
B
Collector-base breakdown voltage
I
= 10 µA,
I
= 0
75
5
C
E
Emitter-base breakdown voltage
I
= 10 µA,
I
= 0
E
C
Collector-base cutoff current
I
µA
CBO
V
V
= 45 V,
I
= 0
–
–
–
–
–
–
0.02
20
20
CB
CB
E
= 45 V,
I
= 0 ,
T
= 150 °C
E
A
nA
–
Emitter-base cutoff current
I
EBO
V
= 5 V,
I
= 0
EB
C
2)
DC current gain
h
FE
I
= 100 µA – 10 mA,
V
= 1 V, hFE-grp.F
75
–
–
–
–
–
–
C
CE
I
= 100 µA – 10 mA,
V
= 1 V, hFE-grp.G
110
180
100
160
250
40
C
CE
I
= 100 µA – 10 mA,
V
= 1 V, hFE-grp.H
C
CE
I
= 100 mA,
V
= 1 V, hFE-grp.F
160
250
350
–
250
400
630
–
C
CE
I
= 100 mA,
V
= 1 V, hFE-grp.G
C
CE
I
= 100 mA,
V
= 1 V, hFE-grp.H
C
CE
I
= 500 mA,
V
= 1 V, hFE-grp.F, G, H
C
CE
2)
Collector-emitter saturation voltage
I
= 100 mA,
I
= 10 mA
V
V
CEsat
–
–
–
–
0.3
0.45
C
B
I
= 500 mA,
I
= 50 mA
C
B
2)
Base emitter saturation voltage
I
= 100 mA,
I
= 10 mA
V
BEsat
–
–
–
–
1.25
1.25
C
B
I
= 500 mA,
I
= 50 mA
C
B
1
For calculation of
R
please refer to Application Note AN077 (Thermal Resistance Calculation)
thJA
Pulse test: t < 300µs; D < 2%
2
2011-09-30
2
BCW66K
Electrical Characteristics
at
T
= 25°C, unless otherwise specified
A
Parameter
Symbol
Values
Unit
min.
typ. max.
AC Characteristics
–
–
–
170
3
–
–
–
MHz
pF
Transition frequency
f
T
I
= 50 mA,
V
= 5 V,
f
= 20 MHz
C
CE
Collector-base capacitance
= 10 V,
f
= 1 MHz
C
C
cb
eb
V
CB
40
Emitter-base capacitance
= 0.5 V,
f
= 1 MHz
V
EB
2011-09-30
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BCW66K
DC current gain
h
=
ƒ
(
I
)
Collector-emitter saturation voltage
FE
C
V
= 1 V
I
=
ƒ
(
V
),
h
= 10
CE
C
CEsat
FE
BCW 65/66
EHP00396
BCW 65/66
EHP00395
1
0
3
1
0
3
mA
5
100 ˚C
150 ˚C
25 ˚C
-50 ˚C
h
FE
Ι
C
25 ˚C
1
0
2
5
1
0
2
5
-50 ˚C
1
0
1
5
1
0
1
5
10
0
5
1
0
-1
1
0
0
1
0
-1
5 1
0
0
5 1
0
1
5 1
0
2
Ι
C
1
0
3
mA
0
200
400
600
800
mV
V
CE sat
Base-emitter saturation voltage
Collector cutoff current
I
=
ƒ
(
T
)
CBO A
I
=
ƒ
(
V
),
h
= 10
V
=
V
C
BEsat
FE
CB CEmax
BCW 65/66
EHP00394
BCW 65/66
EHP00393
1
0
3
mA
10
5
nA
150 ˚C
25 ˚C
-50 ˚C
Ι
CB0
Ι
C
10
4
5
1
0
2
5
10
3
5
max
typ
1
0
1
5
10
2
5
10
0
5
10
1
5
10
0
1
0
-1
0
50
100
150
˚C
T
A
0
1
2
3
V
4
V
BE sat
2011-09-30
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BCW66K
Transition frequency
f
=
ƒ
(
I
)
Collector-base capacitance
C
=
ƒ
(
V
)
cb CB
T
C
V
= 5 V
Emitter-base capacitance
C
=
ƒ
(
V
)
CE
eb
EB
BCW 65/66
EHP00391
1
0
3
75
pF
MHz
5
f
T
60
55
50
45
40
35
30
25
20
15
10
5
CEB
1
0
2
5
CCB
2
1
0
1
0
1
0
0
1
0
1
1
0
2
mA 1
0
3
V
0
4
6
8
10 12 14 16
20
RTF-1
Ι
C
Total power dissipation
P
=
ƒ
(
T
)
Permissible Pulse Load
tot
S
P
/
P
=
ƒ
(
t
)
totmax totDC
p
BCW 65/66
EHP00392
1
0
3
550
P
to
t
m
ax
P
to
t
D
C
t
p
5
t
p
T
D
=
450
400
350
300
250
200
150
100
50
T
1
0
2
5
D
0
=
0.005
0.01
0.02
0.05
0.1
0.2
0.5
1
0
1
5
1
0
0
0
1
0
-6
1
0
-5
1
0
-4
1
0
-3
1
0
-2
s
1
0
0
0
15 30 45 60 75 90
105 120
150
t
p
2011-09-30
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Package SOT23
BCW66K
Package Outline
0.1
1
0.1 MAX.
0.1
2.9
B
3
1
2
1)
+0.1
0.4
A
-0.05
0.08…0.15
0…8˚
C
0.95
1.9
0.25 B
C
1) Lead width can be 0.6 max. in dambar area
M
M
0.2
A
Foot Print
0.8
0.8
1.2
Marking Layout (Example)
Manufacturer
2005, June
Date code (YM)
EH
s
Pin 1
BCW66
T
y
pe code
Standard Packing
Reel ø180 mm = 3.000 Pieces/Reel
Reel ø330 mm = 10.000 Pieces/Reel
4
0.2
0.9
1.15
3.15
Pin 1
2011-09-30
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BCW66K
Edition 2009-11-16
Published by
Infineon Technologies AG
81726 Munich, Germany
2009 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee
of conditions or characteristics. With respect to any examples or hints given herein,
any typical values stated herein and/or any information regarding the application of
the device, Infineon Technologies hereby disclaims any and all warranties and
liabilities of any kind, including without limitation, warranties of non-infringement of
intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices,
please contact the nearest Infineon Technologies Office (
<www.infineon.com>
).
Warnings
Due to technical requirements, components may contain dangerous substances.
For information on the types in question, please contact the nearest Infineon
Technologies Office.
Infineon Technologies components may be used in life-support devices or systems
only with the express written approval of Infineon Technologies, if a failure of such
components can reasonably be expected to cause the failure of that life-support
device or system or to affect the safety or effectiveness of that device or system.
Life support devices or systems are intended to be implanted in the human body or
to support and/or maintain and sustain and/or protect human life. If they fail, it is
reasonable to assume that the health of the user or other persons may be
endangered.
2011-09-30
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