Infineon-Technologies-BCW-68G-E6327
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BCW67, BCW68
PNP Silicon AF Transistors
•
For general AF applications
•
High current gain
•
Low collector-emitter saturation voltage
•
Complementary types: BCW66… (NPN)
•
Pb-free (RoHS compliant) package
•
Qualified according AEC Q101
2
1
3
Type
Marking
DAs
DBs
DCs
DFs
Pin Configuration
Package
SOT23
SOT23
SOT23
SOT23
SOT23
SOT23
BCW67A
BCW67B
BCW67C
BCW68F
BCW68G
BCW68H
1=B
1=B
1=B
1=B
1=B
1=B
2=E
2=E
2=E
2=E
2=E
2=E
3=C
3=C
3=C
3=C
3=C
3=C
DGs
DHs
2011-09-15
1
BCW67, BCW68
Maximum Ratings
Parameter
Symbol
Value
Unit
V
Collector-emitter voltage
BCW67
BCW68
V
V
V
CEO
CBO
EBO
32
45
Collector-base voltage
BCW67
BCW68
45
60
5
800
1
Emitter-base voltage
Collector current
mA
A
I
C
Peak collector current,
t
≤
10 ms
I
CM
p
100
200
330
150
mA
Base current
Peak base current
Total power dissipation,
T
≤
79°C
Junction temperature
Storage temperature
I
B
I
BM
mW
°C
P
S
tot
T
j
T
-65 … 150
stg
Thermal Resistance
Parameter
Junction – soldering point
Symbol
Value
≤
215
Unit
K/W
1)
R
thJS
1
For calculation of
R
please refer to Application Note AN077 (Thermal Resistance Calculation)
thJA
2011-09-15
2
BCW67, BCW68
Electrical Characteristics
at
T
= 25°C, unless otherwise specified
Parameter
Symbol
Values
typ. max.
Unit
min.
DC Characteristics
Collector-emitter breakdown voltage
V
V
V
V
(BR)CEO
(BR)CBO
(BR)EBO
I
= 10 mA,
I
= 0 , BCW67
32
45
–
–
–
–
C
B
I
= 10 mA,
I
= 0 , BCW68
C
B
Collector-base breakdown voltage
I
= 10 µA,
I
= 0 , BCW67
45
60
–
–
–
–
C
E
I
= 10 µA,
I
= 0 , BCW68
C
E
Emitter-base breakdown voltage
I
= 10 µA,
I
= 0
5
–
–
E
C
Collector-base cutoff current
I
µA
CBO
V
V
V
V
= 32 V,
I
= 0
–
–
–
–
–
–
–
–
0.02
0.02
20
CB
CB
CB
CB
E
= 45 V,
I
= 0
E
= 32 V,
I
= 0 ,
T
= 150 °C; BCW67
E
A
= 45 V,
I
= 0 ,
T
= 150 °C; BCW68
20
E
A
–
–
20
nA
–
Emitter-base cutoff current
I
EBO
V
= 4 V,
I
= 0
EB
C
1)
DC current gain
h
FE
I
= 100 µA,
V
= 10 V,
h
-grp.A/F
35
50
–
–
–
–
C
CE
FE
I
= 100 µA,
V
= 10 V,
h
-grp.B/G
C
CE
FE
I
= 100 µA,
V
= 10 V,
h
-grp.C/H
80
–
–
C
CE
FE
I
= 10 mA,
V
= 1 V,
h
-grp.A/F
75
–
–
C
CE
FE
I
= 10 mA,
V
= 1 V,
h
-grp.B/G
120
180
100
160
250
35
–
–
C
CE
FE
I
= 10 mA,
V
= 1 V,
h
-grp.C/H
–
160
250
350
–
–
250
400
630
–
C
CE
FE
I
= 100 mA,
V
= 1 V,
h
-grp.A/F
C
CE
FE
I
= 100 mA,
V
= 1 V,
h
-grp.B/G
C
CE
FE
I
= 100 mA,
V
= 1 V,
h
-grp.C/H
C
CE
FE
I
= 500 mA,
V
= 2 V,
h
-grp.A/F
C
CE
FE
I
= 500 mA,
V
= 2 V,
h
-grp.B/G
60
–
–
C
CE
FE
I
= 500 mA,
V
= 2 V,
h
-grp.C/H
100
–
–
C
CE
FE
2011-09-15
3
BCW67, BCW68
DC Electrical Characteristics
Parameter
Symbol
Values
typ. max.
Unit
min.
Characteristics
Collector-emitter saturation voltage
1)
V
V
CEsat
BEsat
I
= 100 mA,
I
= 10 mA
–
–
–
–
0.3
0.7
C
B
I
= 500 mA,
I
= 50 mA
C
B
1)
Base emitter saturation voltage
I
= 100 mA,
I
= 10 mA
V
–
–
–
–
1.25
2
C
B
I
= 500 mA,
I
= 50 mA
C
B
AC Characteristics
Transition frequency
–
–
–
200
6
–
–
–
MHz
pF
f
T
I
= 50 mA,
V
= 5 V,
f
= 20 MHz
C
CE
Collector-base capacitance
= 10 V,
f
= 1 MHz
C
C
cb
eb
V
CB
60
Emitter-base capacitance
V
= 0.5 V,
f
= 1 MHz
EB
1
Pulse test: t < 300µs; D < 2%
2011-09-15
4
BCW67, BCW68
DC current gain
h
=
ƒ
(
I
)
Collector-emitter saturation voltage
I
=
ƒ
(
V
),
h
= 10
FE
C
V
= 1 V
CE
C
CEsat
FE
BCW 67/68
EHP00402
BCW 67/68
EHP00403
10
3
mA
1
0
3
5
100 ˚C
150 ˚C
25 ˚C
-50 ˚C
Ι
C
h
FE
10
2
5
25 ˚C
1
0
2
5
-50 ˚C
10
1
5
1
0
1
5
10
0
5
10
-1
1
0
0
1
0
-1
5 1
0
0
5 1
0
1
5 10
2
Ι
C
1
0
3
mA
0
200
400
600
800
mV
V
CE sat
Base-emitter saturation voltage
Collector cutoff current
I
=
ƒ
(
T
)
CBO A
I
=
ƒ
(
V
),
h
= 10
V
= 25 V
C
BEsat
FE
CBO
BCW 67/68
EHP00400
BCW 67/68
EHP00401
1
0
5
nA
1
0
3
mA
150 ˚C
25 ˚C
-50 ˚C
Ι
CB0
Ι
C
1
0
4
5
1
0
2
5
1
0
3
5
max
typ
1
0
1
5
1
0
2
5
10
0
5
10
1
5
1
0
-1
1
0
0
0
1
2
3
V
4
0
50
100
˚C
T
A
150
V
BE sat
2011-09-15
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BCW67, BCW68
Transition frequency
f
=
ƒ
(
I
)
Collector-base capacitance
C
=
ƒ
(
V
)
cb CB
T
C
V
= 5 V
Emitter-base capacitance
C
=
ƒ
(
V
)
CE
eb
EB
BCW 67/68
EHP00398
1
0
3
65
pF
MHz
5
55
50
45
40
35
30
25
20
15
10
5
f
T
1
0
2
5
CEB
CCB
6
1
0
1
0
1
0
0
5
10
1
5
1
0
2
10
3
mA
V
0
2
4
8
10 12 14 16
20
/
V
V
CB EB
Ι
C
Total power dissipation
P
=
ƒ
(
T
)
Permissible Pulse Load
tot
S
P
/
P
=
ƒ
(
t
)
totmax totDC
p
BCW 67/68
EHP00399
1
0
3
360
V
P
to
t
m
ax
P
to
t
D
C
t
p
5
t
p
T
D
=
300
270
240
210
180
150
120
90
T
1
0
2
5
D
0
=
0.005
0.01
0.02
0.05
0.1
0.2
0.5
1
0
1
5
60
30
1
0
0
0
1
0
-6
1
0
-5
1
0
-4
1
0
-3
1
0
-2
s
1
0
0
A
0
15 30 45 60 75 90
105 120
150
t
p
2011-09-15
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Package SOT23
BCW67, BCW68
Package Outline
0.1
1
0.1 MAX.
0.1
2.9
B
3
1
2
1)
+0.1
0.4
A
-0.05
0.08…0.15
0…8˚
C
0.95
1.9
0.25 B
C
1) Lead width can be 0.6 max. in dambar area
M
M
0.2
A
Foot Print
0.8
0.8
1.2
Marking Layout (Example)
Manufacturer
2005, June
Date code (YM)
EH
s
Pin 1
BCW66
T
y
pe code
Standard Packing
Reel ø180 mm = 3.000 Pieces/Reel
Reel ø330 mm = 10.000 Pieces/Reel
4
0.2
0.9
1.15
3.15
Pin 1
2011-09-15
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BCW67, BCW68
Edition 2009-11-16
Published by
Infineon Technologies AG
81726 Munich, Germany
2009 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee
of conditions or characteristics. With respect to any examples or hints given herein,
any typical values stated herein and/or any information regarding the application of
the device, Infineon Technologies hereby disclaims any and all warranties and
liabilities of any kind, including without limitation, warranties of non-infringement of
intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices,
please contact the nearest Infineon Technologies Office (
<www.infineon.com>
).
Warnings
Due to technical requirements, components may contain dangerous substances.
For information on the types in question, please contact the nearest Infineon
Technologies Office.
Infineon Technologies components may be used in life-support devices or systems
only with the express written approval of Infineon Technologies, if a failure of such
components can reasonably be expected to cause the failure of that life-support
device or system or to affect the safety or effectiveness of that device or system.
Life support devices or systems are intended to be implanted in the human body or
to support and/or maintain and sustain and/or protect human life. If they fail, it is
reasonable to assume that the health of the user or other persons may be
endangered.
2011-09-15
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