Infineon-Technologies-BCX-42-E6327
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BCX42
PNP Silicon AF and Switching Transistor
•
For general AF applications
•
High breakdown voltage
•
Low collector-emitter saturation voltage
•
Complementary type: BCX41 (NPN)
•
Pb-free (RoHS compliant) package
•
Qualified according AEC Q101
2
3
1
Type
BCX42
Marking
DKs
Pin Configuration
Package
SOT23
1 = B
2 = E
3 = C
Maximum Ratings
Parameter
Symbol
Value
Unit
125
125
5
800
1
V
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
V
V
V
CEO
CBO
EBO
mA
A
I
C
Peak collector current,
t
≤
10 ms
I
p
CM
100
200
330
mA
Base current
Peak base current
Total power dissipation
I
B
I
BM
mW
°C
P
tot
T
≤
79 °C
S
150
Junction temperature
Storage temperature
T
j
T
-65 … 150
Thermal Resistance
Parameter
Junction – soldering point
Symbol
Value
≤
215
Unit
K/W
1)
R
thJS
1
For calculation of
R
please refer to Application Note AN077 (Thermal Resistance Calculation)
thJA
2011-10-04
1
BCX42
Electrical Characteristics
at
T
= 25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ. max.
DC Characteristics
Collector-emitter breakdown voltage
125
–
–
–
–
–
–
V
V
V
V
(BR)CEO
(BR)CBO
(BR)EBO
I
= 10 mA,
I
= 0
C
B
Collector-base breakdown voltage
I
= 100 µA,
I
= 0
125
5
C
E
Emitter-base breakdown voltage
I
= 10 µA,
I
= 0
E
C
Collector-base cutoff current
I
µA
CBO
V
V
= 100 V,
I
= 0
–
–
–
–
0.1
20
CB
CB
E
= 100 V,
I
= 0 ,
T
= 150 °C
E
A
Collector-emitter cutoff current
I
CEO
V
V
= 100 V,
T
= 85 °C
–
–
–
–
–
–
10
75
100 nA
CE
CE
A
= 100 V,
T
= 125 °C
A
Emitter-base cutoff current
I
EBO
V
= 4 V,
I
= 0
EB
C
1)
–
DC current gain
h
FE
I
= 100 µA,
V
= 1 V
25
63
40
–
–
–
–
–
–
C
CE
I
= 100 mA,
V
= 1 V
C
CE
I
= 200 mA,
V
= 1 V
C
CE
1)
Collector-emitter saturation voltage
I
= 300 mA,
I
= 30 mA
V
–
–
0.9
V
CEsat
C
B
1)
Base emitter saturation voltage
I
= 300 mA,
I
= 30 mA
V
–
–
1.4
BEsat
C
B
AC Characteristics
Transition frequency
–
–
150
12
–
–
MHz
pF
f
T
I
= 20 mA,
V
= 5 V,
f
= 20 MHz
C
CE
Collector-base capacitance
= 10 V,
f
= 1 MHz
C
cb
V
CB
1
Pulse test: t < 300µs; D < 2%
2011-10-04
2
BCX42
DC current gain
h
=
ƒ
(
I
)
Collector-emitter saturation voltage
I
=
ƒ
(
V
),
h
= 10
FE
C
V
= 1 V
CE
C
CEsat
FE
BCX 42/BSS 63
EHP00435
BCX 42/BSS 63
EHP00433
1
0
3
mA
1
0
3
˚C
˚C
˚C
5
150
25
-50
h
FE
Ι
C
1
0
2
5
150 ˚C
25 ˚C
-50 ˚C
1
0
1
5
1
0
2
5
1
0
0
5
1
0
-1
1
0
1
1
0
-1
5 10
0
5 10
1
5 1
0
2
Ι
C
10
3
mA
0
200
400
600 mV 800
V
CE sat
Base-emitter saturation voltage
I
=
ƒ
(
V
),
h
= 10
Collector current
I
=
ƒ
(
V
)
C
BE
V
= 1V
C
BEsat
FE
CE
BCX 42/BSS 63
EHP00432
BCX 42/BSS 63
EHP00429
1
0
3
mA
1
0
3
mA
Ι
C
Ι
C
1
0
2
5
1
0
2
5
˚C
150
˚C
˚C
T
A
150
=
˚C
˚C
25
25
-50
˚C
-50
1
0
1
5
1
0
1
5
10
0
5
10
0
5
1
0
-1
1
0
-1
0
1
2
3
0
3
1
2
V
V
V
BE sat
V
BE
2011-10-04
3
BCX42
Collector cutoff current
I
=
ƒ
(
T
)
Transition frequency
f
=
ƒ
(
I
)
T C
CBO
A
V
= 100 V
V
= parameter in V,
f
= 2 GHz
CBO
CE
BCX 42/BSS 63
EHP00434
BCX 42/BSS 63
EHP00431
1
0
4
nA
1
0
3
MHz
5
max
Ι
CB0
f
T
1
0
3
5
1
0
2
5
1
0
2
typ
1
0
1
5
5
10
0
5
10
-1
1
0
1
1
0
0
5
10
1
5
1
0
2
10
3
0
50
100
150
˚C
T
A
mA
Ι
C
Collector-base capacitance
C
=
ƒ
(
V
)
Total power dissipation
P
=
ƒ
(
T
)
tot S
cb
CB
Emitter-base capacitance
C
=
ƒ
(
V
)
eb
EB
400
90
pF
mW
70
60
50
40
30
20
10
0
300
250
200
150
100
50
CEB
CCB
0
V
0
4
8
12
16
22
0
15 30 45 60 75 90
105 120
150
°
C
S
V
(
V
T
CB EB
2011-10-04
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BCX42
Total power dissipation
P
=
ƒ
(
T
)
tot
S
BCX 42/BSS 63
EHP00430
1
0
3
5
P
to
t
m
ax
P
to
t
D
C
t
p
t
p
T
D
=
T
1
0
2
5
D
0
=
0.005
0.01
0.02
0.05
0.1
0.2
0.5
1
0
1
5
1
0
0
1
0
-6
1
0
-5
1
0
-4
1
0
-3
1
0
-2
s
1
0
0
t
p
2011-10-04
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Package SOT23
BCX42
Package Outline
0.1
1
0.1 MAX.
0.1
2.9
B
3
1
2
1)
+0.1
0.4
A
-0.05
0.08…0.15
0…8˚
C
0.95
1.9
0.25 B
C
1) Lead width can be 0.6 max. in dambar area
M
M
0.2
A
Foot Print
0.8
0.8
1.2
Marking Layout (Example)
Manufacturer
2005, June
Date code (YM)
EH
s
Pin 1
BCW66
T
y
pe code
Standard Packing
Reel ø180 mm = 3.000 Pieces/Reel
Reel ø330 mm = 10.000 Pieces/Reel
4
0.2
0.9
1.15
3.15
Pin 1
2011-10-04
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BCX42
Edition 2009-11-16
Published by
Infineon Technologies AG
81726 Munich, Germany
2009 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee
of conditions or characteristics. With respect to any examples or hints given herein,
any typical values stated herein and/or any information regarding the application of
the device, Infineon Technologies hereby disclaims any and all warranties and
liabilities of any kind, including without limitation, warranties of non-infringement of
intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices,
please contact the nearest Infineon Technologies Office (
<www.infineon.com>
).
Warnings
Due to technical requirements, components may contain dangerous substances.
For information on the types in question, please contact the nearest Infineon
Technologies Office.
Infineon Technologies components may be used in life-support devices or systems
only with the express written approval of Infineon Technologies, if a failure of such
components can reasonably be expected to cause the failure of that life-support
device or system or to affect the safety or effectiveness of that device or system.
Life support devices or systems are intended to be implanted in the human body or
to support and/or maintain and sustain and/or protect human life. If they fail, it is
reasonable to assume that the health of the user or other persons may be
endangered.
2011-10-04
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