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BFN18
NPN Silicon High-Voltage Transistors
Data Sheet
Revision 1.0, 2010-10-13
RF & Protection Devices
Edition 2010-10-13
Published by
Infineon Technologies AG
81726 Munich, Germany
©
2010 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or
characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any
information regarding the application of the device, Infineon
T
e
chnologies hereby disclaims any and all warranties
and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further informatio
n on technology, delivery term
s and conditions and prices, please contact the nearest
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in
question, please contact the nearest Infineon
T
e
chnologies Office.
Infineon
T
e
chnologies components may be used in life-support devices or systems only with the express written
approval of Infineon
T
e
chnologies, if a failure of such components can reasonably be expected to cause the failure
of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support
devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may
be endangered.
BFN18
Revision History
Page or Item
Subjects (major changes since previous revision)
Revision 1.0, 2010-10-13
Converted to the new IFX Template.
Trademarks of Infineon Technologies AG
AURIX™, BlueMoon™, COMNEON™, C166™, CROSSAVE™, CanPAK™, CIPOS™, CoolMOS™, CoolSET™,
CORECONTROL™, DAVE™, EasyPIM™, EconoBRIDGE™, EconoDUAL™, EconoPACK™, EconoPIM™,
EiceDRIVER™, EUPEC™, FCOS™, HITFET™, HybridPACK™, ISOFACE™, I²RF™, IsoPACK™, MIPAQ™,
ModSTACK™, my-d™, NovalithIC™, OmniTune™, OptiMOS™, ORIGA™, PROFET™, PRO-SIL™,
PRIMARION™, PrimePACK™, RASIC™, ReverSave™, SatRIC™, SIEGET™, SINDRION™, SMARTi™,
SmartLEWIS™, TEMPFET™, thinQ!™, TriCore™, TRENCHSTOP™, X-GOLD™, XMM™, X-PMU™,
XPOSYS™.
Other Trademarks
Advance Design System™ (ADS) of Agilent Technologies, AMBA™, ARM™, MULTI-ICE™, PRIMECELL™,
REALVIEW™, THUMB™ of ARM Limited, UK. AUTOSAR™ is licensed by AUTOSAR development partnership.
Bluetooth™ of Bluetooth SIG Inc. CAT-iq™ of DECT Forum. COLOSSUS™, FirstGPS™ of Trimble Navigation
Ltd. EMV™ of EMVCo, LLC (Visa Holdings Inc.). EPCOS™ of Epcos AG. FLEXGO™ of Microsoft Corporation.
FlexRay™ is licensed by FlexRay Consortium. HYPERTERMINAL™ of Hilgraeve Incorporated. IEC™ of
Commission Electrotechnique Internationale. IrDA™ of Infrared Data Association Corporation. ISO™ of
INTERNATIONAL ORGANIZATION FOR STANDARDIZATION. MATLAB™ of MathWorks, Inc. MAXIM™ of
Maxim Integrated Products, Inc. MICROTEC™, NUCLEUS™ of Mentor Graphics Corporation. Mifare™ of NXP.
MIPI™ of MIPI Alliance, Inc. MIPS™ of MIPS Technologies, Inc., USA. muRata™ of MURATA
MANUFACTURING CO., MICROWAVE OFFICE™ (MWO) of Applied Wave Research Inc., OmniVision™ of
OmniVision Technologies, Inc. Openwave™ Openwave Systems Inc. RED HAT™ Red Hat, Inc. RFMD™ RF
Micro Devices, Inc. SIRIUS™ of Sirius Sattelite Radio Inc. SOLARIS™ of Sun Microsystems, Inc. SPANSION™
of Spansion LLC Ltd. Symbian™ of Symbian Software Limited. TAIYO
YUDEN™ of Taiyo Yuden Co.
TEAKLITE™ of CEVA, Inc. TEKTRONIX™ of Tektronix Inc. TOKO™ of TOKO KABUSHIKI KAISHA TA. UNIX™
of X/Open Company Limited. VERILOG™, PALLADIUM™ of Cadence Design Systems, Inc. VLYNQ™ of Texas
Instruments Incorporated. VXWORKS™, WIND RIVER™ of WIND RIVER SYSTEMS, INC. ZETEX™ of Diodes
Zetex Limited.
Last Trademarks Update 2010-06-09
Data Sheet
3
Revision 1.0, 2010-10-13
BFN18
Table of Contents
Table of Contents
Table of Contents
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
4
List of Figures
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
5
List of Tables
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
6
Features
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
7
Electrical Characteristics
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
8
Characteristic DC Diagrams
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
10
Package Information SOT89
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
12
1
2
3
4
Data Sheet
4
Revision 1.0, 2010-10-13
NPN Silicon High-Voltage Transistors
BFN18
1
Features
Main features:
•
•
•
•
•
•
Suitable for video output stages TV sets and switching power supplies
High breakdown voltage
Low collector-emitter saturation voltage
Complementary types: BFN19 (PNP)
Pb-free (RoHS compliant) package
1)
Qualified according AEC Q101
SOT89-3D
1) Pb-containing
package may be available upon special request
Product Name
Package
Pin Configuration
2 = C
3 = E
Marking
DE
BFN18
SOT89
1 = B
4 = C
Data Sheet
7
Revision 1.0, 2010-10-13
BFN18
Electrical Characteristics
2
Electrical Characteristics
Table 1
Absolute Maximum Ratings
Symbol
Parameter
Values
Typ. Max.
Unit
Note / Test Condition
Min.
–
Collector-emitter voltage
V
CEO
–
–
–
–
–
–
–
–
300
300
5
V
–
–
–
–
–
–
–
–
Collector-base voltage
Emitter-base voltage
Collector current
V
CBO
V
EBO
I
C
–
V
–
V
–
200
500
100
200
1.5
mA
mA
mA
mA
W
Peak collector current
Base current
I
CM
I
B
–
–
Peak base current
I
BM
–
Total power dissipation-
P
tot
T
S
= 120 °C
–
Junction temperature
Storage temperature
T
j
–
–
–
150
150
°C
°C
–
–
T
stg
-65
Attention: Stresses above the max. values listed here may cause permanent damage to the device.
Exposure to absolute maximum rating conditions for extended periods may affect device
reliability. Maximum ratings are absolute ratings; exceeding only one of these values may
cause irreversible damage to the device.
Table 2
Thermal Resistance
Symbol
Parameter
Values
Typ.
Unit
Note / Test Condition
Min.
Max.
Junction – soldering point
1)
R
thJS
–
–
≤
20
K/W
–
1) For
calculation of
R
thJA
please refer to Application Note Thermal Resistance.
Data Sheet
6
Revision 1.0, 2010-10-13
BFN18
Electrical Characteristics
Table 3
DC Characteristics at
T
A
= 25 °C, Unless Otherwise Specified
Parameter
Symbol
Values
Unit Note
/ Test Condition
Min.
Typ.
Max.
–
Collector emitter breakdown voltage
V
(BR)CEO
300
Collector-base breakdown voltage
V
(BR)CBO
300
–
–
–
–
–
V
I
C
= 1 mA,
I
B
= 0
I
C
= 100 µA,
I
E
= 0
I
E
= 100 µA,
I
C
= 0
–
V
Emitter-base breakdown voltage
Collector-base cutoff current
V
(BR)EBO
I
CBO
5
–
–
–
V
0.1
20
µA
V
V
CB
= 250 V,
I
E
= 0
CB
= 250 V,
I
E
= 0,
T
A
= 150°C
Emitter-base cutoff current
DC current gain
1)
I
EBO
h
FE
–
–
–
–
–
–
–
100
–
nA
V
EB
= 5 V,
I
C
= 0
25
40
30
–
I
C
= 1 mA,
V
CE
= 10 V
I
C
= 10 mA,
V
CE
= 10 V
I
C
= 30 mA,
V
CE
= 10 V
I
C
= 20 mA,
I
B
= 2 mA
I
C
= 20 mA,
I
B
= 2 mA
–
–
Collector-emitter saturation voltage
1)
V
CEsat
Base emitter saturation voltage
1)
0.5
0.9
V
V
V
BEsat
–
1)Pulse test:
t
< 300 µs; D < 2%
Table 4
AC Characteristics at
T
A
= 25 °C
Parameter
Symbol
Values
Unit Note
/ Test Condition
Min.
Typ.
Max.
Transition frequency
f
T
–
70
–
MHz
I
C
= 20 MHz,
V
CE
= 10 V,
f
= 20 MHz
Collector base capacitance
C
Cb
–
1.5
–
pF
V
CB
= 30 V,
f
= 1 MHz
Data Sheet
7
Revision 1.0, 2010-10-13
BFN18
Characteristic DC Diagrams
3
Characteristic DC Diagrams
DC Current Gain
Operating Range
h
FE
=
f
(
I
C
),
V
CE
= 10 V
I
C
=
f
(
V
CEO
),
T
A
= 25°C,
D
= 0
BFN 16/18
EHP00580
BFN 16/18
EHP00585
1
0
3
1
0
3
mA
5
Ι
C
h
FE
1
0
2
5
μ
s
10
1
0
2
5
s
100
μ
1ms
100 ms
1
0
1
5
DC
1
0
1
5
1
0
0
5
1
0
-1
1
0
0
10
0
5
10
1
5
10
2
V
5
10
3
10
-1
5 10
0
5 10
1
5 10
2
mA 10
3
V
CEO
Ι
C
Collector Current
Collector Cutoff Current
I
C
=
f
(
V
BE
),
V
CE
= 10 V
I
CBO
=
f
(
T
A
),
V
CBO
= 200 V
BFN 16/18
EHP00584
BFN 16/18
EHP00582
1
0
4
1
0
3
nA
mA
Ι
C
max
1
0
3
Ι
CBO
5
1
0
2
5
1
0
2
5
1
0
1
5
typ
1
0
1
5
1
0
0
5
1
0
0
5
1
0
-1
1
0
-1
0
0
50
100
˚C
150
0.5
1.0
V
1.5
T
A
V
BE
Data Sheet
8
Revision 1.0, 2010-10-13
BFN18
Characteristic DC Diagrams
Transition Frequency
Collector Base Capacitance
C
cb
=
f
(
V
CB
)
f
T
=
f
(
I
C
),
V
CE
= 10 V
Emitter Base Capacitance
C
eb
=
f
(
V
EB
)
BFN 16/18
EHP00583
1
0
3
90
80
70
60
MHz
f
T
50
1
0
2
5
Ceb
40
30
20
10
0
Ccb
1
0
1
10
0
5
10
1
5
10
2
5
10
3
0
5
10
15
20
25
mA
Ι
C
Vcb, Veb [V]
Total Power Dissipation
Permissible Pulse Load
P
tot
=
f
(
T
S
)
P
totmax
/
P
totDC
=
f
(
T
S
)
BFN 16/18
EHP00581
1
0
3
2
1.8
1.6
1.4
1.2
1
P
to
t
m
ax
t
p
5
t
p
T
P
to
t
D
C
D
=
T
1
0
2
5
D
0
=
0.005
0.01
0.02
0.05
0.1
0.8
0.6
0.4
0.2
0.2
0.5
1
0
1
5
1
0
0
0
0
1
0
-6
1
0
-5
1
0
-4
1
0
-3
1
0
-2
s
1
0
0
50
100
150
Ts [°C]
t
p
Data Sheet
9
Revision 1.0, 2010-10-13
BFN18
Package Information SOT89
4
Package Information SOT89
0.1
4.5
B
0.1
1.5
45˚
0.25
0.2 MAX.
1)
0.05
0.2
1.6
0.15
1
2
3
1.5
0.1
0.35
+0.2
-0.1
0.45
M
0.15
B x3
3
0.2 B
1) Ejector pin markings possible
SOT89-PO V02
Figure 1
Package Outline
2.0
0.8
0.8
0.7
SOT89-FP V02
Figure 2
Package Foot Print
BAW78D
Type code
GA
Pin 1
S 56
200
5
,
J
une
Date code (YM)
Manufacturer
SOT8
9
–
M
A
.
v
sd
Figure 3
Marking Example
Data Sheet
10
Revision 1.0, 2010-10-13
BFN18
Package Information SOT89
8
Pin 1
1.6
4.3
SOT89-TP V02
Figure 4
Tape Dimensions
Packing Description
Reel Ø180 mm = 1.000 Pieces/Reel
Reel Ø330 mm = 4.000 Pieces/Reel
Data Sheet
11
Revision 1.0, 2010-10-13
Published by Infineon Technologies AG
