Infineon-Technologies-BFN-39-H6327
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BFN39
PNP Silicon High-Voltage Transistors
•
Suitable for video output stages in TV sets
4
3
and switching power supplies
2
1
•
High breakdown voltage
•
Low collector-emitter saturation voltage
•
Complementary types: BFN38 (NPN)
•
Pb-free (RoHS compliant) package
•
Qualified according AEC Q101
Type
BFN39
Marking
BFN39
Pin Configuration
Package
SOT223
1=B 2=C 3=E 4=C
–
–
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Peak collector current,
t
≤
10 ms
Base current
Peak base current
Total power dissipation-
Symbol
Value
300
300
5
200
500
100
200
1.5
Unit
V
V
V
V
CEO
CBO
EBO
mA
I
C
I
p
CM
I
B
I
BM
W
P
tot
T
≤
124 °C
S
150
°C
Junction temperature
Storage temperature
T
j
T
-65 … 150
Thermal Resistance
Parameter
Junction – soldering point
Symbol
Value
≤
17
Unit
K/W
1)
R
thJS
1
For calculation of
R
please refer to Application Note AN077 (Thermal Resistance Calculation)
thJA
1
2011-07-25
BFN39
Electrical Characteristics
at
T
= 25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ. max.
DC Characteristics
300
–
–
–
–
–
–
V
Collector-emitter breakdown voltage
V
V
V
(BR)CEO
(BR)CBO
(BR)EBO
I
= 1 mA,
I
= 0
C
B
Collector-base breakdown voltage
I
= 100 µA,
I
= 0
300
5
C
E
Emitter-base breakdown voltage
I
= 100 µA,
I
= 0
E
C
Collector-base cutoff current
I
µA
CBO
V
V
= 250 V,
I
= 0
–
–
–
–
–
–
0.1
20
100 nA
CB
CB
E
= 250 V,
I
= 0 ,
T
= 150 °C
E
A
Emitter-base cutoff current
I
EBO
V
= 5 V,
I
= 0
EB
C
1)
–
DC current gain
h
FE
I
= 1 mA,
V
= 10 V
25
40
30
–
–
–
–
–
–
C
CE
I
= 10 mA,
V
= 10 V
C
CE
I
= 30 mA,
V
= 10 V
C
CE
1)
Collector-emitter saturation voltage
I
= 20 mA,
I
= 2 mA
V
–
–
0.5
V
CEsat
C
B
1)
Base emitter saturation voltage
I
= 20 mA,
I
= 2 mA
V
–
–
0.9
BEsat
C
B
AC Characteristics
Transition frequency
–
–
100
2.5
–
–
MHz
pF
f
T
I
= 20 MHz,
V
= 10 V,
f
= 100 MHz
C
CE
Collector-base capacitance
= 30 V,
f
= 1 MHz
C
cb
V
CB
1
Pulse test: t < 300µs; D < 2%
2
2011-07-25
BFN39
DC current gain
h
=
ƒ
(
I
)
Collector current
I
=
ƒ
(
V
)
FE
C
C
BE
V
= 10 V
V
= 10V
CE
CE
BFN 37/39
EHP00641
BFN 37/39
EHP00642
1
0
3
mA
1
0
3
5
Ι
C
h
FE
1
0
2
5
1
0
2
5
1
0
1
5
1
0
1
5
1
0
0
5
1
0
0
1
0
-1
10
-1
5 10
0
5 10
1
5 10
2
mA 10
3
0
0.5
1.0
V
1.5
Ι
C
V
BE
Collector cutoff current
I
=
ƒ
(
T
)
Transition frequency
f
=
ƒ
(
I
)
CBO
A
T
C
V
= 200 V
V
= 10 V
CBO
CE
BFN 37/39
EHP00644
BFN 37/39
EHP00643
1
0
4
nA
1
0
3
MHz
Ι
CB0
max
1
0
3
5
f
T
1
0
2
5
1
0
2
5
typ
1
0
1
5
1
0
0
5
1
0
1
1
0
-1
10
0
5
10
1
5
10
2
5
10
3
0
50
100
˚C 150
mA
Ι
C
T
A
3
2011-07-25
BFN39
Collector-base capacitance
C
=
ƒ
(
V
)
Total power dissipation
P
=
ƒ
(
T
)
tot S
cb
CB
Emitter-base capacitance
C
=
ƒ
(
V
)
eb
EB
90
pF
1.8
W
70
60
50
40
30
20
10
0
1.2
0.9
0.6
0.3
0
CEB
CCB
22
V
0
4
8
12
16
0
15 30 45 60 75 90
105 120
150
°C
T
S
V
(
V
CB EB
Permissible Pulse Load
P
/
P
=
ƒ
(
t
)
totmax totDC
p
BFN 37/39
EHP00254
1
0
3
P
to
t
m
ax
P
to
t
D
C
t
p
5
t
p
T
D
=
T
1
0
2
5
D
0
=
0.005
0.01
0.02
0.05
0.1
0.2
0.5
1
0
1
5
1
0
0
1
0
-6
1
0
-5
1
0
-4
1
0
-3
1
0
-2
s
1
0
0
t
p
4
2011-07-25
Package SOT223
BFN39
Package Outline
0.1
1.6
0.2
6.5
A
0.1
0.1 MAX.
3
B
4
3
1
2
2.3
0.1
0.7
0.28
0.0
4
4.6
0…10˚
M
0.25
A
M
0.25
B
Foot Print
3.5
1.2 1.1
Marking Layout (Example)
Manufacturer
2005, 24 CW
Date code (YYWW)
BCP52-16
T
y
pe code
Pin 1
Packing
Reel ø180 mm = 1.000 Pieces/Reel
Reel ø330 mm = 4.000 Pieces/Reel
0.3 MAX.
8
1.75
6.8
Pin 1
5
2011-07-25
BFN39
Edition 2009-11-16
Published by
Infineon Technologies AG
81726 Munich, Germany
2009 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee
of conditions or characteristics. With respect to any examples or hints given herein,
any typical values stated herein and/or any information regarding the application of
the device, Infineon Technologies hereby disclaims any and all warranties and
liabilities of any kind, including without limitation, warranties of non-infringement of
intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices,
please contact the nearest Infineon Technologies Office (
<www.infineon.com>
).
Warnings
Due to technical requirements, components may contain dangerous substances.
For information on the types in question, please contact the nearest Infineon
Technologies Office.
Infineon Technologies components may be used in life-support devices or systems
only with the express written approval of Infineon Technologies, if a failure of such
components can reasonably be expected to cause the failure of that life-support
device or system or to affect the safety or effectiveness of that device or system.
Life support devices or systems are intended to be implanted in the human body or
to support and/or maintain and sustain and/or protect human life. If they fail, it is
reasonable to assume that the health of the user or other persons may be
endangered.
6
2011-07-25
