Infineon-Technologies-BFP-640F-H6327

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RF discretes

Selection guide

Infrastructure

Bluetooth

www.infineon.com/rf

Contents

Introduction RF discretes

RF transistors

RF transistors – 7

generation

RF transistors – 8

generation

Medium-power amplifiers

RF transistors – product portfolio

PIN diodes

Schottky diodes

RF diodes portfolio by package

Infineon support for RF discretes

Cross reference list

Introduction RF discretes

Robust, flexible, small and reliable devices for complementary wireless solutions

As society becomes ever more mobile, 24/ꢀ universal network

availability and connectivity will play a big role in our future.

Data traﬀic in mobile systems and infrastructure will

continue to increase tremendously and by 2020 there will

be 50.1 billion units of expected connected devices and

data rates will reach 1 Gbps through 5G deployment,

because people will continue to expand the role of mobile

data in their everyday life. Multiple devices connected

to one another will be used to post, share and stream con-

tent, with videos making up the bulk of this traﬀic.

and interference immunity enhancement, and making

receiving and transmitting signals more stable and reliable

Versatility

: With regard to product portfolio availability,

we outdo our competitors by a factor of 2 and provide our

customers with the necessary versatility during design-in

by oﬀering a wide choice of diﬀerent packages, conven-

tional SOTs or miniaturized TSLPs, and device features

Supply security:

We provide competitive lead times of

≤ ꢂ weeks, while ensuring the ability to handle demand

upswings with two dedicated FEs and two BEs. Our com-

mitment to customers’ shipment dates and supply perfor-

mance always exceeds industry standards by 2 percent,

i.e. ꢃꢀ percent instead of ꢃ5 percent

Quality and reliability

: Our field failure rates are on aver-

age < 0.1 PPM, providing the quality standards for which

Infineon is renowned throughout the semiconductor

industry

Design-in and sales support

: We support our customers

with a worldwide field application engineering and sales

team, providing a professional and flexible design-in

service

›

As a part of this constant increase the growing of access

points under the form of small cells, infotainment and

navigation assistance in automotive for instance will play a

major role in tomorrow’s communications. Granting stable

and reliable wireless reception and transmission at mul-

tiple or specific bands will enable users to access the net

through devices equipped with wireless network interface,

while roaming within the range of fixed Access Points (AP)

or a public cell.

›

Our products stand for

Performance

: Our ꢁ

gen. RF transistors deliver the best NF

Last but not least, we lead innovation and have a proven

›

available on the market – 0.ꢂ dB as measured in the appli-

cation – delivering an improvement in system sensitivity

ability to flexibly support our customers in fragmented and

rapidly developing markets.

Customer Shipment Date (CSD) performance

on average ≥ 97%

Infineon provides with the broadest RF discretes

portfolio for complementary wireless

160

100%

90%

80%

Number of products count

140

124

95%

Industry

standard

120

100

Competitor N

Infineon

Competitor T

Competitor R

Competitor S

The following pages provide guidance in selecting suitable products for particular applications.

RF transistors

For over a decade, Infineon Technologies have paved the

way in all radio frequency segments, with RF transistors

providing an outstanding RF performance, superior signal

quality and robustness – all this at a highly attractive price.

while also providing higher robustness given the ESD

protection, strong design reliability and the option of inte-

grating dense analog circuitry and digital control on the

same mixed-signal IC. Not only does this allow wireless

equipment manufacturers to add more functionality onto

devices where space is a constraint, but it is also available

at a competitive price, while oﬀering the ultimate in qual-

ity and manufacturing eﬀiciency.

Silicon-germanium (SiGe) based on Bꢃ technology benefits

from in-house process builds and years of experience in

high-volume SiGe:C bipolar technology, which has been in

mass production since 2002.

Bꢃ comes in diﬀerent variants, but the ꢀ

and ꢁ

genera-

tions – each with its own optimization for specific applica-

tion areas – are our focus series.

Bꢃ-based product serie deliver an RF performance compa-

rable to GaAs in terms of linearity and noise figures;

General-purpose LNAs

ꢀ

– ꢁ

Gen.

(max) = ꢂ–ꢁ GHz

Noise

min

ꢀ.ꢂ–ꢃ.ꢀ dB

ꢂ

Gen.

(max) = 25 GHz

Very low noise

min

= 1.1 dB

ꢄ

Gen.

Ultra low noise

(max) = 2ꢃ GHz

min

= 0.ꢃ dB

ꢅ

Gen.

ꢆ

Gen.

(max) = 40 GHz

min

= 0.ꢀ dB

(max) = 44 GHz

min

= 0.ꢂ dB

ꢇ

Gen.

(max) = ꢁ0 GHz

min

0.ꢄ dB

1) As measured in the application

2) Available with ESD for improved robustness

Low

Frequency (f

(max) in GHz)

High

RF transistors – 7

generation

Ease of use for complementary wireless connectivity

Infineon’s ꢀ

generation RF transistor family is an easy-

to-use series of discrete Heterojunction Bipolar Transistors

(HBT) which is suitable as a single- and dual-band Low-

Noise Amplifier (LNA) solution for a vast range of WiFi con-

nectivity applications.

capacitance in order to enhance high-frequency character-

istics. Furthermore, they allow engineers to increase the

RF link budget and Signal-to-Noise Ratio (SNR) of their AP

routers and mobile stations when wider coverage areas are

needed and especially when a higher order modulation

scheme, such as 25ꢂ Quadrature Amplitude Modulation

(QAM), is used. They oﬀer a high throughput where a more

stringent SNR for both the AP and client is required.

This series of devices combines a 44 GHz f

silicon-germa-

nium:carbide (SiGe:C) BꢀHF process with advanced device

geometry engineering conceived to reduce the parasitic

Key features

Technical benefits

Customer benefits

Ease of use RF performance

Broad frequency range:

from 450 MHz to 12 GHz

Reduced

power consumption

Device suitability

under input signal

power-stress

Unmatched

general purpose device for

high flexibility in vast frequency range

Energy savings

and extended battery life

Improved high input power robustness

›

High transition frequency f

= 45 GHz

High gain (1ꢃ dB) and NF level (0.ꢂ5 dB)

High linearity OP1dB +ꢁ.5 dBm and OIP3

›

+1ꢃ dBm at 2.4 GHz at low current con-

sumption of 13 mA

High maximum RF input power

1.5 kV HBM ESD robustness

›

2.4

0.15 GHz

0.45 GHz

2.2

f = 3.5 GHz

f = 10 GHz

2.0

f = 2.4 GHz

f = 1.9 GHz

f = 1.5 GHz

f = 0.9 GHz

f = 0.45 GHz

1.8

1.6

0.9 GHz

1.5 GHz

1.9 GHz

2.4 GHz

3.5 GHz

5.5 GHz

10 GHz

1.4

f = 5.5 GHz

1.2

1.0

0.8

0.6

0.4

0.2

10 15 20 25 30 35 40 45 50 55

[mA]

Infineon’s ꢀ

generation general-purpose transistors oﬀer

RF engineers an outstanding performance. With noise

figures of as low as 0.45 dB in sub-GHz range and of 0.ꢃ dB

at 5.5 GHz, this transistor series functions as a low-noise

amplifier and provides improved system sensitivity in wire-

less communication and broadcasting systems.

With G

max

of more than 10 dB at 10 GHz, Infineon’s ꢀ

gener-

ation product portfolio can also be used as a gain block for

buﬀer or driver amplifiers, or as a mixer or VCO for frequen-

cies higher than 10 GHz.

RF transistors – 8

generation

Best-in-class performance for WiFi connectivity

The BFxꢁ40x product family is a series of discrete Heterojunc-

ꢁ

generation RF transistors allow engineers to increase the

tion Bipolar Transistors (HBT) addressing dual- and fixed-

frequency Low-Noise Amplifier (LNA) solutions for high-per-

formance WiFi connectivity applications. It combines an

ꢁ0 GHz f

silicon-germanium:carbide (SiGe:C) BꢃHF process

and adopts dedicated device geometry reducing the para-

sitic capacitance between substrate and transistor degrades

high-frequency characteristics and ultimately improved.

RF link budget and Signal-to-Noise Ratio (SNR) of their AP

routers and mobile stations when wider coverage areas are

needed mostly or when a higher order modulation scheme

is used, such as in emerging very high throughput wireless

specifications like 25ꢂ Quadrature Amplitude Modulation

(QAM) in IEEE ꢁ02.11ac, which has more stringent SNR

requirements for both the AP client.

Best-in-class 8

generation RF transistors: NF and G

max

SiGe competitor comparison

Best in class

0.8

0.7

0.6

0.5

+17%

-15%

Best in class

BPx740

series

BPx840

series

Comp. N

BPx740

series

BPx840

series

Comp. N

ꢁ

generation RF transistors come with an improved BiC in relation to NF and power gain G

max

compared to previous gener-

ations and closest SiGe competitors.

Block diagram

2.4 GHz LNA

Power detector

5 GHz LNA

SPDT switch

Antenna

2.4 / 5 GHz

2.4 GHz PA

SPDT switch

WiFi

Transceiver

ESD

diode

5 GHz PA

Power detector

Low-Noise Amplifiers (LNA) are key components required

to increase the system sensitivity and extend the max.

connecting distance for WiFi applications. Their primary

purpose involves delivering a superior performance where

Infineon’s ꢁ

generation RF SiGe Bipolar transistors act as

an LNA, delivering the lowest Noise Figure (NF) of 0.ꢂ dB at

5.5 GHz, and the highest gain thanks to their high frequency

) and superior linearity compared to other solutions

losses of the whole RF front end become critical due to long

on the market. This outstanding performance delivers an

routing paths, for instance in WiFi architectures with 4 x 4

MIMO or ꢁ x ꢁ MIMO functions.

improvement in system sensitivity and interference immu-

nity enhancement, helping engineers to design high-perfor-

mance WiFi applications at an attractive price.

Infrastructure

Medium-power amplifiers

Infineon’s first generation

The BFPꢀꢁ0 and BFQꢀꢃ0 are Infineon’s new general-

purpose high-gain driver amplifiers based on Infineon’s

cost-eﬀective Silicon Germanium (SiGe) technology.

Optimized for power gain and addressing a broad range of

wireless applications, they are a new addition to the

existing RF product portfolio.

single-stage driver amplifiers provide high linearity and

high gain for use at frequencies up to 3.0 GHz, while also

ensuring great flexibility in designs where high linearity is a

determining factor in component selection.

The emitter-base diode design provides the BFPꢀꢁ0 and

BFQꢀꢃ0 with high ruggedness even at high maximum RF

input power, whereas the silicon substrate conductivity and

low thermal resistance of the package make the devices

thermally resistant, facilitating high dissipated power val-

ues during operation.

Suitable for commercial and industrial wireless infra-

structure – such as 3G/4G, set-top boxes and CATV, along

with indoor and outdoor wireless access points – these

280

275

270

265

260

255

250

IP1dB

0.45 GHz

0.90 GHz

1.80 GHz

Out

2.60 GHz

3.50 GHz

PAE

-10

-25 -20

-15 -10

-5

[dBm]

10 15

[mA]

100 120

Out

, gain, I

, PAE vs. P

at V

= 5 V,

= 250 mA, f = 2.ꢂ GHz, Z

= Z

Opt

Maximum power gain G

max

vs. I

at V

= 5 V, f = parameter

Block diagram

LNA

Duplexer

Driver

Transceiver

ESD

diode

BFP780

BFQ790

Driver amplifiers, also known as high linear gain blocks, are

an important functional block in RF transceiver systems.

The final stage of the transmitter chain in the transceiver

system, Power Amplifier (PA), requires a certain input

power level to deliver to the required output power, which

usually cannot be delivered by the transceiver IC directly.

In these cases, external one- or two-stage driver amplifiers

are required. Driver amplifiers provide the high gain linear

signal amplification from the transceiver IC to the PA. They

are generally operated in linear class-A mode to enable simul-

taneous high linearity and high gain, thereby keeping the

spurious signals generated by the PA down to a minimum.

RF transistors – product portfolio

RF transistors ꢀ

generation

Product name

OPN

(max.)

[mA]

min

(typ)

[dB]

max

(typ)

[dB]

OIPꢁ

[dBm]

OPꢀdB

[dBm]

Package

BFPꢀ20

BFPꢀ20Hꢂ32ꢀXTSA1

ꢀ0

0.5

0.ꢂ

0.5

0.ꢂ

0.5

2ꢂ.0

2ꢀ.0

2ꢀ.5

2ꢀ.0

24.5

25.0

20.5

22.0

25.0

24.5

25.0

31.5

ꢂ.0

SOT343

TSFP-4-1

SOT343

TSFP-4-1

SOT343

TSFP-4-1

SOT343

TSFP-4-1

TSLP-3-ꢃ

SOT343

BFPꢀ20F

BFPꢀ20FHꢂ32ꢀXTSA1

BFPꢀ20ESDHꢂ32ꢀXTSA1

BFPꢀ20FESDHꢂ32ꢀXTSA1

BFPꢀ40Hꢂ32ꢀXTSA1

ꢂ.0

BFPꢀ20ESD

BFPꢀ20FESD

BFPꢀ40

ꢂ.5

ꢀ.0

11.0

10.0

11.0

14.5

BFPꢀ40F

BFPꢀ40FHꢂ32ꢀXTSA1

BFPꢀ40ESDHꢂ32ꢀXTSA1

BFPꢁ40FESDHꢂ32ꢀXTSA1

BFRꢀ40L3RHEꢂ32ꢀXTSA1

BFPꢀꢂ0Hꢂ32ꢀXTSA1

BFPꢀ40ESD

BFPꢀ40FESD

BFRꢀ40L3RH

BFPꢀꢂ0

RF transistors ꢁ

generation

Product name

OPN

min

(typ)

[dB]

max

(typ)

[dB]

OIPꢁ

OPꢀdB

Package

[dBm]

24.0

23.5

21.0

24.5

1ꢀ.0

[dBm]

BFPꢁ43

BFPꢁ43Hꢂ32ꢀXTSA1

0.ꢃ5

0.ꢃ0

0.ꢃ5

0.ꢂ0

0.55

0.40

0.50

22.5

23.5

24.0

2ꢀ.0

2ꢀ.5

23.5

2ꢂ.5

ꢀ.0

SOT343

TSFP-4-1

TSLP-3-ꢃ

SOT343

TSFP-4-1

SOT343

TSLP-3-ꢃ

BFPꢁ43F

BFPꢁ43FHꢂ32ꢀXTSA1

ꢀ.0

BFRꢁ43EL3

BFPꢁ40ESD

BFPꢁ40FESD

BFPꢁ42ESD

BFRꢁ40L3RHESD

BFRꢁ43EL3Eꢂ32ꢀXTSA1

BFPꢁ40ESDHꢂ32ꢀXTSA1

BFPꢁ40FESDHꢂ32ꢀXTSA1

BFPꢁ42ESDHꢂ32ꢀXTSA1

BFRꢁ40L3RHESDEꢂ32ꢀXTSA1

ꢀ.0

4.5

ꢁ.0

4.0

Infrastructure

RF drivers

Product name

OPN

At ꢀ.9 GHz

At ꢃ.ꢆ GHz

Package

Gain

[dB]

OIPꢁ

[dBm]

OPꢀdB

[dBm]

Gain

[dB]

OIPꢁ

[dBm]

OPꢀdB

[dBm]

BFPꢀꢁ0

BFQꢀꢃ0

BFPꢀꢁ0Hꢂ32ꢀXTSA1

1ꢁ

2ꢀ

14.4

14.0

SOT343

SOTꢁꢃ

BFQꢀꢃ0Hꢂ32ꢀXTSA1 1ꢀ

2ꢀ

1) Available as of Q4/201ꢂ

RF transistors – product portfolio

Infrastructure

Low-noise Si transistor up to 2.5 GHz

Product

name

SP No

OPN

Electrical characteristics

Package

CEO

(max)

[V]

(max)

[mA]

min

(typ)

[dB]

max

(typ)

[dB]

OIPꢁ

OPꢀdB

(typ) P

tot

(max)

[GHz]

[dBm] [dBm]

[mW]

1ꢀ5.0

250.0

450.0

2ꢁ0.0

1ꢀ5.0

450.0

ꢂ0.0

BFP1ꢁ1

BFR1ꢁ1

SP000011013 BFP1ꢁ1Eꢀꢀꢂ4HTSA1

SP00001104ꢀ BFR1ꢁ1Eꢂ32ꢀHTSA1

12.0

20.0

35.0

ꢂ5.0

45.0

25.0

20.0

ꢂ5.0

10.0

35.0

ꢂ5.0

0.ꢃ

1.4

3.5

3.0

3.5

0.ꢃ

1.15

1.0

0.ꢃ

21.0

1ꢁ.5

1ꢃ.0

22.0

1ꢁ.0

1ꢃ.0

22.0

1ꢀ.5

1ꢂ.0

12.ꢀ

20.0

1ꢃ.0

1ꢂ.5

1ꢀ.5

15.5

1ꢂ.0

22.0

1ꢂ.5

1ꢁ.0

24.0

24.5

25.0

2ꢂ.5

2ꢀ.0

24.0

21.5

22.5

1ꢁ.0

2ꢂ.5

13.0

12.5

24.0

2ꢂ.5

-2.0

-1.0

5.0

ꢁ.0

SOT143-4-1

SOT23

ꢁ.0

BFR1ꢁ1W SP000ꢀ5041ꢁ BFR1ꢁ1WHꢂ32ꢀXTSA1 12.0

BFP1ꢁ2R SP00001101ꢂ

BFP1ꢁ2REꢀꢀꢂ4HTSA1 12.0

BFP1ꢁ2W SP000ꢀ451ꢀꢂ BFP1ꢁ2WHꢂ32ꢀXTSA1 12.0

BFR1ꢁ2 SP000011051

BFR1ꢁ2Eꢂ32ꢀHTSA1 12.0

ꢁ.0

SOT323

SOT143-4-1

SOT343

SOT23

ꢁ.0

5.0

ꢁ.0

5.0

ꢁ.0

BFR1ꢁ2W SP000ꢀ50420 BFR1ꢁ2WHꢂ32ꢀXTSA1 12.0

BFP1ꢁ3W SP000ꢀ45244 BFP1ꢁ3WHꢂ32ꢀXTSA1 12.0

5.0

ꢁ.0

SOT323

SOT343

SOT23

ꢁ.5

ꢁ.0

BFR1ꢁ3

SP000011054 BFR1ꢁ3Eꢂ32ꢀHTSA1

12.0

15.0

12.0

ꢂ.0

ꢃ.0

ꢁ.0

BFR35AP SP0000110ꢂ0

BFR35APEꢂ32ꢀHTSA1

ꢃ.0

5.0

SOT23

BFRꢃ2P

BFS1ꢀP

BFS1ꢀS

BFS1ꢀW

BFS4ꢁ1

BFS4ꢁ3

BFR340F

SP0000110ꢂ2 BFRꢃ2PEꢂ32ꢀHTSA1

SP0000110ꢀ3 BFS1ꢀPEꢂ32ꢀHTSA1

SP000ꢀ5044ꢁ BFS1ꢀSHꢂ32ꢀXTSA1

SP000ꢀ50450 BFS1ꢀWHꢂ32ꢀXTSA1

SP000ꢀ504ꢂ2 BFS4ꢁ1Hꢂ32ꢀXTSA1

SP000ꢀ504ꢂ4 BFS4ꢁ3Hꢂ32ꢀXTSA1

SP000ꢀ5042ꢂ BFR340FHꢂ32ꢀXTSA1

ꢃ.0

5.0

SOT23

10.0

11.0

-1.0

ꢃ.0

1.4

SOT23

1.4

SOT3ꢂ3

SOT323

SOT3ꢂ3

TSFP-3-1

TSLP-3-ꢀ

TSFP-3-1

TSLP-3-1

SOT143

1.4

ꢁ.0

-1.0

ꢃ.0

14.0

ꢁ.0

BFR340L3 SP00001355ꢁ

BFR340L3Eꢂ32ꢀXTMA1 ꢂ.0

BFR3ꢂ0F SP000ꢀ5042ꢁ

BFR3ꢂ0FHꢂ32ꢀXTSA1 ꢂ.0

BFR3ꢂ0L3 SP0000135ꢂ1

BFR3ꢂ0L3Eꢂꢀꢂ5XTMA1 ꢂ.0

BFP1ꢁ3 SP00001101ꢁ

BFP1ꢁ3Eꢀꢀꢂ4HTSA1 12.0

ꢂ0.0

210.0

250.0

ꢃ.0

ꢁ.5

Low-noise Si transistor up to 5 GHz

Product

name

SP No

OPN

Electrical characteristics

Package

CEO

(max)

[V]

min

(typ)

[dB]

max

(typ)

[dB]

OIPꢁ

OPꢀdB f

(typ)

[dBm]

tot

(max)

[mA]

12.0

40.0

35.0

50.0

40.0

ꢁ0.0

50.0

[dBm]

15.0

14.0

23.5

22.0

24.0

2ꢀ.5

25.0

23.5

24.5

2ꢀ.0

[GHz]

25.0

22.0

45.0

30.0

22.0

[mW]

BFP405

SP000ꢀ45254 BFP405Hꢂ32ꢀXTSA1

SP000ꢀ4525ꢁ BFP405FHꢂ32ꢀXTSA1

SP000ꢀꢂ2244 BFP410Hꢂ32ꢀXTSA1

SP000ꢀ452ꢂ0 BFP420Hꢂ32ꢀXTSA1

SP000ꢀ452ꢂꢁ BFP420FHꢂ32ꢀXTSA1

SP000ꢀ452ꢀꢂ BFP4ꢂ0Hꢂ32ꢀXTSA1

SP000ꢀ452ꢁ0 BFP520Hꢂ32ꢀXTSA1

SP000ꢀ452ꢁ2 BFP520FHꢂ32ꢀXTSA1

SP000ꢀ452ꢁꢁ BFP540Hꢂ32ꢀXTSA1

4.5

2.5

4.5

1.25

1.2

23.0

22.5

21.5

21.0

1ꢃ.5

1ꢀ.5

23.5

22.5

21.5

20.0

1ꢂ.0

5.0

55.0

SOT343

TSFP-4-1

SOT343

TSFP-4-1

SOT343

TSFP-4-1

SOT343

TSFP-4-1

TSLP-3-1

BFP405F

BFP410

0.0

55.0

10.5

12.0

10.5

11.5

12.0

10.5

11.0

11.5

150.0

1ꢂ0.0

200.0

100.0

250.0

200.0

BFP420

1.1

BFP420F

BFP4ꢂ0

1.1

BFP520

0.ꢃ5

0.ꢃ

BFP520F

BFP540

BFP540ESD

SP000ꢀ452ꢃꢁ BFP540ESDHꢂ32ꢀXTSA1

0.ꢃ

BFP540FESD SP000ꢀ45300

BFP540FESDHꢂ32ꢀXTSA1 4.5

BFR4ꢂ0L3 SP00001423ꢁ

BFR4ꢂ0L3Eꢂ32ꢀXTMA1 4.5

0.ꢃ

1.1

Ultra-low-noise SiGe:C transistors up to 12 GHz

Product

name

SP No

OPN

Electrical characteristics

Package

CEO

(max)

[V]

(max)

[mA]

min

(typ)

[dB]

max

(typ)

[dB]

OIPꢁ

OPꢀdB f

(typ)

tot

(max)

[mW]

[dBm]

2ꢀ.0

2ꢂ.0

25.5

25.0

2ꢂ.5

2ꢀ.5

[dBm]

12.0

11.5

14.5

14.0

13.0

13.5

[GHz]

4ꢂ.0

ꢂ5.0

40.0

BFPꢂ40ESD

SP000ꢀꢁ54ꢁ2 BFPꢂ40ESDHꢂ32ꢀXTSA1

4.1

50.0

ꢁ0.0

50.0

0.ꢂ5

0.55

0.ꢀ

25.0

2ꢂ.5

21.5

21.0

24.0

23.0

200.0

1ꢁ5.0

200.0

SOT343

TSFP-4-1

SOT343

TSFP-4-1

SOT343

TSFP-4-1

BFPꢂ40FESD SP000ꢁꢃ0034

BFPꢂ40FESDHꢂ32ꢀXTSA1 4.1

BFPꢂ20

BFPꢂ20F

BFPꢂ40

BFPꢂ40F

SP000ꢀ45302 BFPꢂ20Hꢀꢀꢂ4XTSA1

SP000ꢀ45304 BFPꢂ20FHꢀꢀꢂ4XTSA1

SP000ꢀ4530ꢂ BFPꢂ40Hꢂ32ꢀXTSA1

SP000ꢀ50404 BFPꢂ40FHꢂ32ꢀXTSA1

2.3

4.0

0.ꢀ

0.ꢂ5

High-linearity Si-and SiGe:C transistors up to ꢂ GHz

Product

name

SP No

OPN

Electrical characteristics

Package

CEO

(max)

[V]

(max)

[mA]

min

(typ)

[dB]

max

(typ)

[dB]

OIPꢁ

OPꢀdB f

(typ)

[GHz]

tot

(max)

[mW]

[dBm]

32.0

30.0

32.0

2ꢃ.5

30.0

2ꢃ.0

30.0

2ꢃ.0

32.0

2ꢃ.0

2ꢃ.5

2ꢃ.0

2ꢃ.5

31.0

32.0

[dBm]

22.0

15.0

22.0

15.0

14.ꢁ

15.0

1ꢃ.0

1ꢀ.0

1ꢂ.0

1ꢃ.0

1ꢁ.0

1ꢀ.5

1ꢃ.0

BFQ1ꢃS

BFRꢃ3A

SP000011042 BFQ1ꢃSEꢂ32ꢀHTSA1

SP0000110ꢂꢂ BFRꢃ3AEꢂ32ꢀHTSA1

15.0

12.0

210.0

ꢃ0.0

1.ꢁ

1.5

1.ꢁ

1.0

1.3

1.0

1.3

1.1

1.25

0.ꢁ

1.3

11.5

14.5

15.5

13.0

1ꢁ.0

20.5

15.0

1ꢃ.0

1ꢂ.0

1ꢃ.0

13.5

15.5

21.5

1ꢃ.0

5.5

1.0

SOTꢁꢃ

ꢂ.0

300.0

ꢀ00.0

5ꢁ0.0

ꢀ00.0

3ꢁ0.0

450.0

500.0

ꢀ00.0

SOT23

BFRꢃ3AW

BFR10ꢂ

SP000ꢀ34402 BFRꢃ3AWHꢂ32ꢀXTSA1

12.0

ꢃ0.0

ꢂ.0

SOT323

SOT23

SP000011044 BFR10ꢂEꢂ32ꢀHTSA1

SP000011024 BFP1ꢃ3Eꢂ32ꢀHTSA1

15.0

12.0

210.0

ꢁ0.0

5.0

BFP1ꢃ3

ꢁ.0

SOT143-4-1

SOT343

SOT23

BFP1ꢃ3W

BFR1ꢃ3

SP000ꢀ4524ꢁ BFP1ꢃ3WHꢂ32ꢀXTSA1

12.0

ꢁ0.0

ꢁ.0

SP00001105ꢂ BFR1ꢃ3Eꢂ32ꢀHTSA1

SP000ꢀ50424 BFR1ꢃ3FHꢂ32ꢀXTSA1

12.0

ꢁ0.0

ꢁ.0

BFR1ꢃ3F

BFR1ꢃ3W

BFR1ꢃ3L3

BFP1ꢃꢂW

BFR3ꢁ0F

BFR3ꢁ0L3

BFP450

ꢁ0.0

ꢁ.0

TSFP-3-1

SOT323

TSLP-3-1

SOT343

TSFP-3-1

TSLP-3-1

SOT343

TSFP-4-1

SOT143-4-1

SP000ꢀ34404 BFR1ꢃ3WHꢂ32ꢀXTSA1

12.0

SP00001355ꢀ BFR1ꢃ3L3Eꢂ32ꢀXTMA1 12.0

SP000ꢀ45250 BFP1ꢃꢂWHꢂ32ꢀXTSA1

12.0

ꢁ0.0

ꢁ.0

ꢁ0.0

ꢁ.0

150.0

ꢁ0.0

ꢀ.5

SP000ꢀ50444 BFR3ꢁ0FHꢂ32ꢀXTSA1

ꢂ.0

14.0

24.0

3ꢀ.0

42.0

ꢀ.5

SP0000135ꢂ2 BFR3ꢁ0L3Eꢂ32ꢀXTMA1 ꢂ.0

ꢁ0.0

SP000ꢀ452ꢀ0 BFP450Hꢂ32ꢀXTSA1

SP000ꢀ5040ꢂ BFPꢂ50Hꢂ32ꢀXTSA1

SP000ꢀ5040ꢁ BFPꢂ50FHꢂ32ꢀXTSA1

SP00001102ꢀ BFP1ꢃꢂEꢂ32ꢀHTSA1

4.5

4.0

12.0

100.0

150.0

BFPꢂ50

BFPꢂ50F

BFP1ꢃꢂ

PIN diodes

Operating at up to 3 GHz with high-voltage handling capa-

bilities, Infineon Technologies PIN diodes are ideal for a

wide range of mobile communication and RF applications.

Their low loss and low distortion levels improve battery

life and quality in cellular and cordless phones.

resistance, diode capacitance and series inductance.

These inherent qualities are largely due to a state-of-the-

art planar diﬀusion process. Available in a range of

highly compact package options – including TSLP and the

leadless – significant board space savings can be made,

helping designers create smaller, lighter end-products.

Along with an outstanding RF performance, these diodes

simplify design-in thanks to their extremely low forward

Key features

Technical benefits

Customer benefits

Low insertion loss (low r )

High isolation (low capacitance C )

Low power consumption (low I )

Low level of high-frequency distortion

Broad product portfolio

Package miniaturization

Single and dual configuration

High linearity

Fast switching time for Rx-Tx antenna

switches

Low insertion loss and low dissipated

power in Rx-Tx antenna switches

Enhanced overall RF performance

Flexibility in circuit design with a focus on

required parameters

Easily adaptable to diﬀerent applications/

frequencies

Enhanced versatility in design conception

Improved system eﬀiciency

›

Customer benefits – space saving

±±0.

209

±±0.

±08

Small form factor: ꢀ0% of package

›

±±0±ꢀ3

±0ꢀ2

profile increases design flexibility

ꢃ0% reduction of parasitics

Improved RF performance at

insertion

›

SOT23

SC79

TSSLP-2-1, -2

Application example: single-antenna cordless phone

LNA

BPF

Two single PIN diodes or one dual diode are at the core of

an SPDT switch

›

Depending on the bias voltage, one of the diodes is in

“short

”

nother in “open” state, eﬀectively connecting

either the Tx or Rx path to the antenna

Infineon PIN diodes are ideal for building a switch which

simultaneously delivers a low insertion loss and high

isolation

SPDT

switch

Transceiver

›

Buer

amplifier

ESD

diode

BPF

Low-noise amplifier

BFP640, BFP740, BFP840

Buꢀer amplifier

BFP450, BFP650, BFP750

ANT SW

PIN diodes

BAR64-xx, BAR63-xx,

BAR90-xx

TVS diode

ESD108, ESD128,

ESD129

Infrastructure

PIN diodes – product portfolio

series

[pF]

Product name

at ꢀ V

[pF]

at ꢀ0 mA

[

Ω

]

Package

> 50 pF

BA5ꢃ2

BAR14-1/15-1/1ꢂ-1

BARꢂ1

BARꢂ4-03W, -02V

BARꢂ4-02EL

BARꢂ4-04/05/0ꢂ/*0ꢀ

BARꢂ4-04W/05W/0ꢂW

BARꢂ5-03W, -02V

BARꢂꢂ

BARꢂꢀ-02V

BARꢂꢀ-04

BAꢁꢁ5, BA5ꢃ5

BAꢁꢃ5-02V

BARꢁꢁ-02V

BARꢁꢁ-02LRH

BARꢁꢃ-02LRH

BARꢃ0-02EL, -02ELS

BARꢃ0-02LRH

BARꢃ0-0ꢁ1LS

BAT1ꢁ-04,-05

BAR50-03W, -02V

BAR50-02L

BARꢂ3-03W, -02V

BARꢂ3-02L

BARꢂ3-04/05/0ꢂ

BARꢂ3-04W/05W/0ꢂW

0.ꢃ2

0.3ꢂ

ꢀ.00

2.10

2.20

2.30

0.ꢂ0

1.00

4.50

0.ꢂ0

0.ꢁ0

0.40

3.00

1.00

120 ns

1.0 µs

1.55 µs

ꢁ0 ns

ꢀ00 ns

1.ꢂ µs

0.5 µs

0.5 ms

0.ꢁ µs

0.ꢀ5 µs

120 ns

1.1 µs

ꢀ5 ns

SOD323

SOT23

SOT143

SOD323, SCꢀꢃ

TSLP-2

SOT23, *SOT143

SOT323

SOD323, SCꢀꢃ

SOT23

SCꢀꢃ

SOT23

SOT23, SOD323

SCꢀꢃ

TSLP-2-RH

TSLP-2, TSSLP-2

TSLP-2-RH

TSSLP-ꢁ

SOT23

SOD323, SCꢀꢃ

TSLP-2

SOD323, SCꢀꢃ

TSLP-2

SOT23

0.50

0.45

0.40

0.35

0.30

0.25

0.ꢀ5

0.24

0.23

< 50 pF

≤

25 pF

ꢀ5 ns

SOT323

1) Not recommended for new designs

D = Double configuration

Q = Quad configuration

Schottky diodes

Infineon RF Schottky diodes are silicon low-barrier N-type

devices and, unlike other solutions available on the mar-

ket, they come with

various junction diode configurations

which can be used for highly sensitive power detector

circuits, and in sampling or mixer circuits.

A very

low barrier height

and

very small forward voltage

along with

low junction capacitance

, make this series

of devices an excellent choice as a detector function at fre-

quencies as high at 24 GHz.

Key features

Technical benefits

Customer benefits

Low leakage current (low R )

Low signal distortion level

High eﬀiciency / low losses

Low power consumption

Guard-ring protection on chip

Broad product portfolio

Package miniaturization

Fast switching

Tailored for low-/medium-power

detection circuits

Wide dynamic range in detector

applications

Higher linearity and power handling

capability compared to integrated mixers

Flexibility in circuit design with a focus on

required parameters

›

Easy adaptability to diﬀerent

applications/frequencies

Easy detector/mixer design due to width

Enhanced versatility in design conception

Improved system eﬀiciency

›

Application example: 24GHz radar system

24 GHz

Double-balanced mixer

Buꢀer

VCO

Balun

LNA

amplifier

to baseband

Schottky diode

BAT24-02ELS

Unbalanced, single-balanced or double-balanced mixer

topology depending on application requirements

Balanced mixer oﬀers good RF isolation

Double-balanced mixer also provides good isolation

between LO, RF and IF

Target applications

›

Wireless LAN and WiFi routers

Mobile devices

›

24 GHz radar system preferring discretes solutions

Schottky diodes – product portfolio

Product name

(max)

[V]

(max)

[mA]

[pF]

at ꢀ mA

[mV]

Package

BAT15-02EL/-02ELS

BAT15-03W

BAT15-04W

BAT15-05W

BAT15-04R

BAT15-0ꢃꢃ/-0ꢃꢃLRH

BAT15-0ꢃꢃR

BAT1ꢀ

110

130

110

0.2ꢂ

0.3ꢁ

0.55

0.ꢀ5

0.21

0.35

0.ꢂ5

0.ꢀ5

230

340

230

440

1ꢃ0

31ꢁ

TSLP-2/TSSLP-2

SOD323

SOT323

SOT23

SOT143/TSLP-4

SOT143

SOT23

BAT1ꢀ-04/W

BAT1ꢀ-05

SOT23/SOT323

SOT23

BAT1ꢀ-05W

BAT1ꢀ-0ꢂW

BAT1ꢀ-0ꢀ

SOT323

SOT143

BAT24-02LS

BATꢂ2

TSSLP

SOT143

BATꢂ2-02L/-02LS

BATꢂ2-02V/-03W

BATꢂ2-0ꢀL4

BATꢂ2-0ꢀW

BATꢂ3-02V

120

TSLP-2/TSSLP-2

SCꢀꢃ/SOD323

TSLP-4

SOT343

100

130

SCꢀꢃ

BATꢂ3-0ꢀW

BATꢂꢁ

SOT343

ꢁ

SOT23

BATꢂꢁ-04/W

BATꢂꢁ-0ꢂ/W

ꢁ

SOT23/SOT323

ꢁ

1) Not recommended for new designs

D = Double configuration

Q = Quad configuration

RF diodes portfolio by package

PIN diodes

Antenna switches

SOD323

SC79

SOT23

SOT143

SOT323

TSLP-2

TSSLP-2

TSSLP-8

BAR50-03W

BAR63-03W

BAR64-03W

BAR65-03W

BAR50-02V

BAR63-02V

BAR64-02V

BAR65-02V

BAR67-02V

BAR63-04

BAR63-05

BAR63-06

BAR64-04

BAR64-05

BAR64-06

BAR67-04

BAR64-07

BAR63-04W

BAR63-05W

BAR63-06W

BAR63-04W

BAR63-05W

BAR63-06W

BAR50-02L

BAR63-02L

BAR64-02EL

BAR90-02EL

BAR90-02ELS

BAR90-081LS

BAR88-02V

BA885-02V

BAR88-02LRH

BAR89-02LRH

BAR90-02LRH

RF attenuators

BA595

BA885

BAR61

BAR14-1

BAR15-1

BAR16-1

Recommended for new designs

Not recommended for new designs

Schottky diodes

Mixer

SOD323

SC79

SOT23

SOT143

SOT323

TSLP-2

TSSLP-2

TSLP

BAT15-03W

BAT15-04R

BAT17

BAT17-04

BAT17-05

BAT15-099

BAT17-06W

BAT15-04W

BAT15-05W

BAT17-04W

BAT17-05W

BAT17-06W

BAT15-02EL

BAT15-02ELS

BAT24-02LS

BAT15-099

BAT62

BAT15-099LRH

Power detector

BAT62-03W

BAT62-02V

BAT63-02V

BAT68

BAT68-04

BAT68-06

BAT62-07W

BAT63-07W

BAT68-04W

BAT68-06W

BAT62-02L

BAT62-02LS

Recommended for new designs

Not recommended for new designs

Infineon support for RF discretes

Useful links and helpful information

Further information, datasheets and documents

www.infineon.com/rꢄransistors

www.infineon.com/rfdiodes

Evaluationboards

www.infineon.com/rfevalboards

Simulation Models

www.infineon.com/rfcomponentlibraries

Videos

www.infineon.com/rf

www.infineon.com/mediacenter

Simulation

Cross reference list

RF transistors

Product name

BFP1ꢁ1

Manufacturer product

BFR505/T

BFU520X

Manufacturer Product

family

Product name

BFP1ꢁ2W

BFP1ꢁ3

Manufacturer product

2SC5012

/2SC5015

2SC40ꢃ4

/2SC4ꢃ5ꢀ

2SC40ꢃ3

/2SC5455

2SC422ꢀ

/2SC5011

2SC40ꢃ3

1) 2)

/2SC422ꢀ

2SC40ꢃ3

Manufacturer Product

family

NXP

RF Transistors

Renesas

RF Transistors

BFP1ꢁ2

BFP1ꢁ2R

BFP1ꢁ2W

BFP1ꢁ3

BFU520XR

BFP1ꢃ3

BFU520W

BFP1ꢃ3W

BFP1ꢃꢂ

BFU530X

BFP1ꢁ3W

BFP1ꢃ3

BFU530W

BFP1ꢃꢂW

BFR35AP

BFRꢃ3AW

BFR1ꢁ1

BFG540/X

2SA1ꢃꢀꢀ

BFP1ꢃ3W

BFP1ꢃꢂ

BFG540W/XR

BFG540/X

2SC422ꢂ

2SC550ꢁ

/2SC5010

2SC500ꢀ

BFP1ꢃꢂW

BFR35AP

BFRꢃ3A

BFG540W/XR

BFT25A

BFR1ꢁ1W

BFR1ꢁ2W

BFR1ꢁ3W

BFR1ꢃ3F

BFQ1ꢃS

BFTꢃ3A

BFRꢃ3AW

BFR1ꢁ1

BFTꢃ3W

2SC500ꢂ

BFG505XN

BFU520A

2SC335ꢀ/40ꢃ5/453ꢂ/4ꢀ03 Renesas

2SC5ꢂ0ꢂ

2SC550ꢁ

BFR1ꢁ2

BFR340F

BFR3ꢂ0F

BFP420

Renesas

Toshiba

BFR1ꢁ2W

BFR1ꢁ3

BFS520W/PRFꢃ4ꢀ

BFU530A

BFR1ꢁ3W

BFR1ꢃ3

BFU530W/PRFꢃ4ꢀ

BFU550A

BFP450

2SC550ꢃ

BFS4ꢁ1

2SC5ꢂ0ꢂ

1) 2)

2SC5455

1) 2)

2SC550ꢃ(NEꢂꢂ3M04)

2SC50ꢁꢀ

BFS1ꢀP

BFS1ꢀA

BFS4ꢁ3

BFR340F

BFP405

BFG325XR

BFRꢀ50EL3

BFP1ꢁ3W

BFP1ꢃ3

BFG410W

BFP420

BFG425W

2SC50ꢁꢀR

BFP450

BFG21W/BFG4ꢁ0W

BFG4ꢁ0W

/BFUꢂꢂ0F

BFG4ꢁ0W

/BFUꢂꢂ0F

BFUꢂ10F

BFP1ꢃ3W

BFP1ꢃꢂW

BFR35AP

BFRꢃ3AW

BFR10ꢂ

2SC4ꢁ42

BFP540

2SC4ꢁ42

BFP540ESD

BFPꢂ20

MT3S1ꢃR

MT3S1ꢂU

MT3S113/MT3S111

BFPꢂ40

BFUꢂ30F

BFPꢂ40ESD

BFPꢂ50

BFUꢂ30F

BFR1ꢁ1W

BFR1ꢁ2

2SC50ꢃ0

BFUꢂꢂ0F

2SC50ꢂ4

BFPꢀ20

BFUꢀ10F

BFR1ꢁ2W

BFR1ꢁ3

2SC50ꢂ5

BFPꢀ20ESD

BFPꢀ40

BFUꢀ10F

2SC50ꢁ4

BFUꢀ25F/BFUꢀ30F

BFUꢀꢂ0F

BFR1ꢁ3W

BFR1ꢃ3

2SC50ꢁ5

BFPꢀ40ESD

BFPꢀꢂ0

2SC50ꢁ4

2SC50ꢁꢂ

BFR1ꢃ3F

BFR1ꢃ3W

BFP405

BFRꢀ40EL3

BFPꢁ40ESD

BFPꢁ43

BFUꢀ30LX

2SC50ꢁ5

BFUꢀ10F

MT4S34U

BFUꢀ30F

BFP420

MT4S200U

MT4S24U

/MT4S03BU

MT4S300U/MT4S301U

BFRꢁ43EL3

BGBꢀ0ꢀLꢀESD

BFUꢀ30LX

BFP450

BGUꢂ102

BFP540ESD

1) In a diﬀerent package

2) In a diﬀerent pinning

RF diodes

Product name

Manufacturer

Product family

Product name

Manufacturer

product

Manufacturer

Product family

product

BARꢂ4-03W

BARꢂ4-04

BAPꢂ4-03

BAPꢂ4-04

BAPꢂ4-04W

BAPꢂ4-05

BAPꢂ4-05W

BAPꢂ4-0ꢂ

BAPꢂ4-0ꢂW

BAPꢂ5-02

BAPꢂ5-03

BAP51-02

BAPꢂ5LX

BAPꢂ5-02

BAP142LX

1SV251

NXP

RF PIN Diodes

BAT15-02EL

BAT15-02ELS

BAT15-02LRH

BAT15-02LS

BAT15-03W

BAT15-04W

BAT15-03W

BAT1ꢀ

HSMS2ꢁꢂx

1PSꢀꢂSB1ꢀ

BAT1ꢀ

Avago

RF Schottky Diodes

RF Pin Diodes

NXP

Avago

BARꢂ4-04W

BARꢂ4-05

NXP

Avago

NXP

Avago

BARꢂ4-05W

BARꢂ4-0ꢂ

NXP

Avago

NXP

Avago

BARꢂ4-0ꢂW

BARꢂ5-02V

BARꢂ5-03W

BARꢂꢀ-02V

BARꢁꢁ-02LRH

BARꢁꢁ-02V

BARꢁꢃ-02LRH

BAR14-1

NXP

BAT1ꢀ-04

BATꢂ2

PMBD353

BAS40-0ꢀ

1PSꢀꢃSB30

1PSꢀꢂSB21

1PSꢀ0SBꢁ2

1PSꢀ0SBꢁ5

1PSꢀ0SBꢁꢂ

BAT54SW

BAT1ꢀ

NXP

BATꢂ2-02V

BATꢂ3-02V

BATꢂꢁ

NXP

Onsemi

Vishay

BATꢂꢁ-04W

BATꢂꢁ-0ꢂ

BAT15-04W

BAT1ꢀ

NXP

BARꢂ4-04

1SV251

NXP

BARꢂ4-04W

BARꢂ5-03W

BAꢁꢁ5

1SV2ꢂ4

ST Microelectronics

Toshiba

MMVL3401

BAꢀꢀꢃ-G

BAT1ꢀ-04

BAT1ꢀ-04W

BAT1ꢀ-05

BAT1ꢀ-05W

BAT1ꢀ-0ꢂ

BAT1ꢀ-0ꢂW

BAT15-0ꢃꢃ

BAT1ꢀ

BASꢀ0-04

BAT54SW

BASꢀ0-04W

BASꢀ0-05

BASꢀ0-05W

BASꢀ0-0ꢂ

BASꢀ0-0ꢂW

SMS3ꢃ2ꢂ-023

JDH2S01FS

1SS2ꢀ1

BAR14-1

S3ꢃ2D-G

BARꢂ4-05W

BARꢂ4V-05W

Toshiba

BAT1ꢀ-04

BAT1ꢀ-04W

BAT1ꢀ-0ꢀ

BATꢂꢁ-0ꢂ

BATꢂ4

Toshiba

1SS2ꢃ4

Toshiba

BATꢂꢁ-0ꢂ

BAT15-03W

BAT15-02EL

BAT15-02ELS

BA5ꢃ5

1SS2ꢃ5

Toshiba

1SS315

Toshiba

JDH2S01FS

JDH2S02FS

JDH2S02SL

BAPꢀ0-03

BAP50-02

BAP142LX

BAPꢂ4-02

Toshiba

NXP

BAR50-02V

BARꢂ3-02L

BARꢂ4-02V

NXP

RF Pin Diodes

NXP

RF Pin Diodes

NXP

RF Pin Diodes

Where to buy

Infineon distribution partners and sales oﬀices:

www.infineon.com/WhereToBuy

Service hotline

Infineon oﬀers its toll-free 0ꢁ00/4001 service hotline as one central number,

available 24/ꢀ in English, Mandarin and German.

Germany ……………….. 0ꢁ00 ꢃ51 ꢃ51 ꢃ51 (German/English)

China, mainland

……. 4001 200 ꢃ51 (Mandarin/English)

India ……………………..

000 ꢁ00 4402 ꢃ51 (English)

USA ………………………. 1-ꢁꢂꢂ ꢃ51 ꢃ51ꢃ (English/German)

Other countries ……… 00* ꢁ00 ꢃ51 ꢃ51 ꢃ51 (English/German)

Direct access

…………. +4ꢃ ꢁꢃ 234-0 (interconnection fee, German/English)

›

* Please note: Some countries may require you to dial a code other than “00” to access this international number.

Please visit www.infineon.com/service for your country!

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Please note!

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Additional information

THIS DOCUMENT IS FOR INFORMATION PURPOSES ONLY AND

ANY INFORMATION GIVEN HEREIN SHALL IN NO EVENT BE

REGARDED AS A WARRANTY, GUARANTEE OR DESCRIPTION OF

For further information on technologies, our products, the

application of our products, delivery terms and conditions

and/or prices, please contact your nearest Infineon Technologies

oﬀice (www.infineon.com).

Published by

Infineon Technologies AG

ꢁ1ꢀ2ꢂ Munich, Germany

ANY FUNCTIONALITY, CONDITIONS AND/OR QUALITY OF OUR

PRODUCTS OR ANY SUITABILITY FOR A PARTICULAR PURPOSE.

WITH REGARD TO THE TECHNICAL SPECIFICATIONS OF OUR

PRODUCTS, WE KINDLY ASK YOU TO REFER TO THE RELEVANT

PRODUCT DATA SHEETS PROVIDED BY US. OUR CUSTOMERS AND

THEIR TECHNICAL DEPARTMENTS ARE REQUIRED TO EVALUATE

THE SUITABILITY OF OUR PRODUCTS FOR THE INTENDED

APPLICATION.

Warnings

Due to technical requirements, our products may contain

dangerous substances. For information on the types in question,

please contact your nearest Infineon Technologies oﬀice.

Except as otherwise explicitly approved by us in a written

document signed by authorized representatives of Infineon

Technologies, our products may not be used in any life-

endangering applications, including but not limited to medical,

nuclear, military, life-critical or any other applications where a

failure of the product or any consequences of the use thereof

can result in personal injury.

WE RESERVE THE RIGHT TO CHANGE THIS DOCUMENT AND/OR

THE INFORMATION GIVEN HEREIN AT ANY TIME.

Order number: B132-I031ꢃ-V1-ꢀꢂ00-EU-EC-P

Date: 0ꢃ / 201ꢂ

Infineon-Technologies-BFP-640F-H6327

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