Infineon-Technologies-BFP-843F-H6327
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BFP843F
SiGe:C NPN RF bipolar transistor
Product description
The BFP843F is a robust low noise broadband pre-matched RF heterojunction bipolar
transistor (HBT).
Feature list
•
Unique combination of high end RF performance and robustness: 20 dBm maximum RF input power,
1.5 kV HBM ESD hardness
•
High transition frequency to enable best in class noise performance at high frequencies:
NF
min
= 1.1
dB at 5.5 GHz, 1.8 V, 8 mA
•
•
•
High gain
G
ma
= 18 dB at 5.5 GHz, 1.8 V, 15 mA
OIP
3
= 19.5 dBm at 5.5 GHz, 1.8 V, 15 mA
Suitable for low voltage applications e.g.
V
CC
= 1.2 V and 1.8 V (2.85 V, 3.3 V, 3.6 V require a corresponding
collector resistor)
Product validation
Qualified for industrial applications according to the relevant tests of JEDEC47/20/22.
Potential applications
•
•
WLAN, WiMAX and UWB
Satellite communication systems: satellite radio (SDARs, DAB) and navigation systems (e.g. GPS, GLONASS,
BeiDou, Galileo)
Device information
Table 1
Part information
Product name / Ordering code
Package
Pin configuration
Marking
Pieces / Reel
BFP843F / BFP843FH6327XTSA1
TSFP-4-1
1 = B
2 = E
3 = C
4 = E
T2s
3000
Attention
:
ESD (Electrostatic discharge) sensitive device, observe handling precautions
Datasheet
Please read the Important Notice and Warnings at the end of this document
v2.0
2018-09-26
BFP843F
SiGe:C NPN RF bipolar transistor
Table of contents
Table of contents
Product description
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1
Feature list
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Product validation
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1
Potential applications
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1
Device information
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1
Table of contents
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Absolute maximum ratings
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3
Thermal characteristics
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
1
2
3
Electrical characteristics
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
DC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
5
General AC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Frequency dependent AC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
.
6
Characteristic DC diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Characteristic AC diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
3.1
3.2
3.3
3.4
3.5
4
Package information TSFP-4-1
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
19
Revision history
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
Disclaimer
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
21
Datasheet
2
v2.0
2018-09-26
BFP843F
SiGe:C NPN RF bipolar transistor
Absolute maximum ratings
1
Absolute maximum ratings
Table 2
Absolute maximum ratings at
T
A
= 25 °C (unless otherwise specified)
Parameter
Symbol
Values
Min. Max.
2.25
Unit Note
or test condition
Collector emitter voltage
Collector emitter voltage
1)
V
CEO
–
V
Open base
2.0
T
A
= -55 °C, open base
E-B short circuited
V
CES
2.25
2.0
T
A
= -55 °C,
E-B short circuited
Collector base voltage
2)
V
CBO
2.9
2.6
5
Open emitter
T
A
= -55 °C, open emitter
Base current
I
B
-5
–
mA
–
Collector current
RF input power
ESD stress pulse
I
C
55
20
1.5
P
RFin
V
ESD
dBm
kV
-1.5
–
HBM, all pins, acc. to
JESD22-A114
Total power dissipation
3)
Junction temperature
Storage temperature
P
tot
T
J
125
150
mW
T
S
≤ 100 °C
°C
–
T
Stg
-55
Attention
:
Stresses above the max. values listed here may cause permanent damage to the device.
Exposure to absolute maximum rating conditions for extended periods may
affect
device
reliability. Exceeding only one of these values may cause irreversible damage to the integrated
circuit.
1
V
CES
is identical to
V
CEO
due to design.
V
CBO
is similar to
V
CEO
due to design.
T
S
is the soldering point temperature.
T
S
is measured on the emitter lead at the soldering point of the PCB.
2
3
Datasheet
3
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2018-09-26
BFP843F
SiGe:C NPN RF bipolar transistor
Thermal characteristics
2
Thermal characteristics
Table 3
Thermal resistance
Parameter
Symbol
Values
Unit Note
or test condition
Min. Typ. Max.
Junction – soldering point
R
thJS
–
395
–
K/W
–
130
120
110
100
90
80
70
60
50
40
30
20
10
0
0
25
50
75
T
S
[°C]
100
125
150
Figure 1
Total power dissipation
P
tot
= f(
T
S
)
Datasheet
4
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BFP843F
SiGe:C NPN RF bipolar transistor
Electrical characteristics
3
Electrical characteristics
3.1
DC characteristics
Table 4
DC characteristics at
T
A
= 25 °C
Parameter
Symbol
Values
Unit Note
or test condition
Min. Typ. Max.
Collector emitter breakdown voltage
Collector emitter leakage current
Collector base leakage current
Emitter base leakage current
DC current gain
V
(BR)CEO
2.25 2.6
–
V
I
C
= 1 mA,
I
B
= 0,
open base
I
CES
I
CBO
I
EBO
h
FE
–
–
400
1)
nA
400
1)
V
CE
= 1.5 V,
V
BE
= 0,
E-B short circuited
V
CB
= 1.5 V,
I
E
= 0,
open emitter
10
1)
μA
450
V
EB
= 0.5 V,
I
C
= 0,
open collector
150
260
V
CE
= 1.8 V,
I
C
= 15 mA,
pulse measured
3.2
General AC characteristics
Table 5
General AC characteristics at
T
A
= 25 °C
Parameter
Symbol
Values
Unit Note
or test condition
Min. Typ. Max.
Collector base capacitance
2)
C
CB
–
5.23
0.06
–
pF
f
= 1 MHz
f
= 1 GHz
V
CB
= 1.8 V,
V
BE
= 0,
emitter grounded
Collector emitter capacitance
Emitter base capacitance
C
CE
0.46
0.7
f
= 1 MHz,
V
CE
= 1.8 V,
V
BE
= 0,
base grounded
C
EB
f
= 1 MHz,
V
EB
= 0.4 V,
V
CB
= 0,
collector grounded
1
Maximum values not limited by the device but by the short cycle time of the 100% test
Including integrated feedback capacitance
2
Datasheet
5
v2.0
2018-09-26
BFP843F
SiGe:C NPN RF bipolar transistor
Electrical characteristics
3.3
Frequency dependent AC characteristics
Measurement setup is a test fixture with Bias-T’s in a 50 Ω system,
T
A
= 25 °C.
VC
T
o
p View
Bias
–
T
OUT
C
E
E
VB
B
(Pin 1)
Bias-T
IN
Figure 2
Testing circuit
AC characteristics,
V
CE
= 1.8 V,
f
= 450 MHz
Table 6
Parameter
Symbol
Values
Min. Typ. Max.
Unit Note
or test condition
Power gain
–
–
dB
•
•
Maximum power gain
Transducer gain
G
ma
|
S
21
|
2
25
24.5
I
C
= 15 mA
Noise figure
•
•
Minimum noise figure
Associated gain
NF
min
G
ass
0.8
22.5
I
C
= 8 mA
Linearity
dBm
•
•
3rd order intercept point at output
1 dB gain compression point at output
OP
1dB
OIP
3
24.5
7
Z
S
=
Z
L
= 50 Ω,
I
C
= 15 mA
Datasheet
6
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BFP843F
SiGe:C NPN RF bipolar transistor
Electrical characteristics
Table 7
AC characteristics,
V
CE
= 1.8 V,
f
= 900 MHz
Parameter
Symbol
Values
Unit Note
or test condition
Min. Typ. Max.
Power gain
–
–
dB
•
•
Maximum power gain
Transducer gain
G
ma
|
S
21
|
2
24.5
24
I
C
= 15 mA
Noise figure
•
•
Minimum noise figure
Associated gain
NF
min
G
ass
0.8
22
I
C
= 8 mA
Linearity
dBm
•
•
3rd order intercept point at output
1 dB gain compression point at output
OP
1dB
OIP
3
24
8
Z
S
=
Z
L
= 50 Ω,
I
C
= 15 mA
Table 8
AC characteristics,
V
CE
= 1.8 V,
f
= 1.5 GHz
Parameter
Symbol
Values
Unit Note
or test condition
Min. Typ. Max.
Power gain
–
–
dB
•
•
Maximum power gain
Transducer gain
G
ma
|
S
21
|
2
24
23
I
C
= 15 mA
Noise figure
•
•
Minimum noise figure
Associated gain
NF
min
G
ass
0.85
21
I
C
= 8 mA
Linearity
dBm
•
•
3rd order intercept point at output
1 dB gain compression point at output
OP
1dB
OIP
3
23
7
Z
S
=
Z
L
= 50 Ω,
I
C
= 15 mA
Table 9
AC characteristics,
V
CE
= 1.8 V,
f
= 1.9 GHz
Parameter
Symbol
Values
Unit Note
or test condition
Min. Typ. Max.
Power gain
–
–
dB
•
•
Maximum power gain
Transducer gain
G
ma
|
S
21
|
2
23.5
22.5
I
C
= 15 mA
Noise figure
•
•
Minimum noise figure
Associated gain
NF
min
G
ass
0.9
20.5
I
C
= 8 mA
Linearity
dBm
•
•
3rd order intercept point at output
1 dB gain compression point at output
OP
1dB
OIP
3
23.5
7.5
Z
S
=
Z
L
= 50 Ω,
I
C
= 15 mA
Datasheet
7
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2018-09-26
BFP843F
SiGe:C NPN RF bipolar transistor
Electrical characteristics
Table 10
AC characteristics,
V
CE
= 1.8 V,
f
= 2.4 GHz
Parameter
Symbol
Values
Unit Note
or test condition
Min. Typ. Max.
Power gain
–
–
dB
•
•
Maximum power gain
Transducer gain
G
ma
|
S
21
|
2
22.5
21.5
I
C
= 15 mA
Noise figure
•
•
Minimum noise figure
Associated gain
NF
min
G
ass
0.95
20
I
C
= 8 mA
Linearity
dBm
•
•
3rd order intercept point at output
1 dB gain compression point at output
OP
1dB
OIP
3
22.5
6.5
Z
S
=
Z
L
= 50 Ω,
I
C
= 15 mA
Table 11
AC characteristics,
V
CE
= 1.8 V,
f
= 3.5 GHz
Parameter
Symbol
Values
Unit Note
or test condition
Min. Typ. Max.
Power gain
–
–
dB
•
•
Maximum power gain
Transducer gain
G
ma
|
S
21
|
2
21
19.5
I
C
= 15 mA
Noise figure
•
•
Minimum noise figure
Associated gain
NF
min
G
ass
1.0
18
I
C
= 8 mA
Linearity
dBm
•
•
3rd order intercept point at output
1 dB gain compression point at output
OP
1dB
OIP
3
22
6
Z
S
=
Z
L
= 50 Ω,
I
C
= 15 mA
Table 12
AC characteristics,
V
CE
= 1.8 V,
f
= 5.5 GHz
Parameter
Symbol
Values
Unit Note
or test condition
Min. Typ. Max.
Power gain
–
–
dB
•
•
Maximum power gain
Transducer gain
G
ma
|
S
21
|
2
18
16.5
I
C
= 15 mA
Noise figure
•
•
Minimum noise figure
Associated gain
NF
min
G
ass
1.1
15.5
I
C
= 8 mA
Linearity
dBm
•
•
3rd order intercept point at output
1 dB gain compression point at output
OP
1dB
OIP
3
19.5
4.5
Z
S
=
Z
L
= 50 Ω,
I
C
= 15 mA
Datasheet
8
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BFP843F
SiGe:C NPN RF bipolar transistor
Electrical characteristics
Table 13
AC characteristics,
V
CE
= 1.8 V,
f
= 10 GHz
Parameter
Symbol
Values
Unit Note
or test condition
Min. Typ. Max.
Power gain
–
–
dB
•
•
Maximum power gain
Transducer gain
G
ma
|
S
21
|
2
13.5
10
I
C
= 15 mA
Noise figure
•
•
Minimum noise figure
Associated gain
NF
min
G
ass
1.7
10
I
C
= 8 mA
Linearity
dBm
•
•
3rd order intercept point at output
1 dB gain compression point at output
OP
1dB
OIP
3
16.5
0.5
Z
S
=
Z
L
= 50 Ω,
I
C
= 15 mA
Note:
G
ms
= IS
21
/ S
12
I for k < 1; G
ma
= IS
21
/ S
12
I(k-(k
2
-1)
1/2
) for k > 1. In order to get the NF
min
values, stated in
this chapter the test fixture losses have been subtracted from all measured results. OIP
3
value
depends on termination of all intermodulation frequency components. Termination used for this
measurement is 50
Ω
from 0.2 MHz to 12 GHz.
Datasheet
9
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BFP843F
SiGe:C NPN RF bipolar transistor
Electrical characteristics
3.4
Characteristic DC diagrams
22
20
18
16
14
12
10
8
80µA
70µA
60µA
50µA
40µA
30µA
20µA
6
4
10µA
2
0
0
0.5
1
1.5
2
2.5
V
CE
[V]
Figure 3
Collector current vs. collector emitter voltage
I
C
= f(
V
CE
),
I
B
= parameter
10
3
10
2
10
−
2
10
−
1
10
0
10
1
10
2
I
c
[mA]
Figure 4
DC current gain
h
FE
= f(
I
C
),
V
CE
= 1.8 V
Datasheet
10
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BFP843F
SiGe:C NPN RF bipolar transistor
Electrical characteristics
10
2
10
1
10
0
10
−
1
10
−
2
10
−
3
10
−
4
10
−
5
0.5
0.55
0.6
0.65
0.7
0.75
0.8
0.85
0.9
V
BE
[V]
Figure 5
Collector current vs. base emitter forward voltage
I
C
= f(
V
BE
),
V
CE
= 1.8 V
10
0
10
−
1
10
−
2
10
−
3
10
−
4
10
−
5
10
−
6
10
−
7
0.5
0.55
0.6
0.65
0.7
0.75
0.8
0.85
0.9
V
BE
[V]
Figure 6
Base current vs. base emitter forward voltage
I
B
= f(
V
BE
),
V
CE
= 1.8 V
Datasheet
11
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BFP843F
SiGe:C NPN RF bipolar transistor
Electrical characteristics
10
−
6
10
−
7
10
−
8
10
−
9
10
−
10
10
−
11
0.3
0.35
0.4
0.45
0.5
0.55
0.6
0.65
0.7
V
EB
[V]
Figure 7
Base current vs. base emitter reverse voltage
I
B
= f(
V
EB
),
V
CE
= 1.8 V
Datasheet
12
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BFP843F
SiGe:C NPN RF bipolar transistor
Electrical characteristics
3.5
Characteristic AC diagrams
24
22
20
18
16
14
12
10
8
1.5
V
,
2
400MHz
1.8
V
,
2
400MHz
1.5
V
,
5
500MHz
1.8
V
,
5
500MHz
6
4
2
0
0
5
10
15
20
25
30
35
I
C
[mA]
Figure 8
3rd order intercept point at output
OIP
3
= f(
I
C
),
Z
S
=
Z
L
= 50 Ω,
V
CE
,
f
= parameters
35
30
25
20
15
10
20
18
19
19
18
12
17
16
15
14
17
16
15
16
15
14
1
14
13
13
12
13
12
1.2
5
1.4
1.6
1.8
2
V
CE
[V]
Figure 9
3rd order intercept point at output
OIP
3
[dBm] = f(
I
C
,
V
CE
),
Z
S
=
Z
L
= 50 Ω,
f
= 5.5 GHz
Datasheet
13
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BFP843F
SiGe:C NPN RF bipolar transistor
Electrical characteristics
35
30
25
20
15
4
3
2
1
0
10
5
0
−
1
−
1
−
2
−
2
−
3
−
5
−
2
−
3
−
3
−
4
−
4
−
5
−
4
−
5
1
1.2
1.4
1.6
1.8
2
V
CE
[V]
Figure 10
Compression point at output
OP
1dB
[dBm] = f(
I
C
,
V
CE
),
Z
S
=
Z
L
= 50 Ω,
f
= 5.5 GHz
26
24
22
G
ma
20
18
|S
21
|
2
16
14
12
10
8
6
4
2
0
0
1
2
3
4
5
6
7
8
9
10 11 12
f [GHz]
Figure 11
Gain
G
ma
,
G
ms
, I
S
21
I
2
= f(
f
),
V
CE
= 1.8 V,
I
C
= 15 mA
Datasheet
14
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BFP843F
SiGe:C NPN RF bipolar transistor
Electrical characteristics
28
26
24
22
20
18
16
14
12
10
8
0.45GHz
0.90GHz
1.50GHz
1.90GHz
2.40GHz
3.50GHz
5.50GHz
10.00GHz
12.00GHz
6
4
2
0
0
5
10 15 20 25 30 35 40 45 50 55 60 65 70
I
C
[mA]
Figure 12
Maximum power gain
G
max
= f(
I
C
),
V
CE
= 1.8 V,
f
= parameter in GHz
28
26
0.45GHz
0.90GHz
24
22
20
18
16
14
12
10
1.50GHz
1.90GHz
2.40GHz
3.50GHz
5.50GHz
10.00GHz
12.00GHz
0
0.5
1
1.5
2
2.5
V
CE
[V]
Figure 13
Maximum power gain
G
max
= f(
V
CE
),
I
C
= 15 mA,
f
= parameter in GHz
Datasheet
15
v2.0
2018-09-26
BFP843F
SiGe:C NPN RF bipolar transistor
Electrical characteristics
1
1.5
0.5
2
0.4
12.0
11.0
3
12.0
11.0
0.3
10.0
9.0
4
10.0
9.0
8.0
0.2
5
0.03 to 12 GHz
8.0
0.1
10
7.0
6.0
5.0
7.0
0.1 0.2
0.3 0.4
0.5
1
1.0
1.5
2
3
4 5
4.0
0
3.0
6.0
5.0
2.0
−
0.1
−
10
1.0
0.03
4.0
2.0
3.0
0.03
−
0.2
−
5
−
4
−
0.3
−
3
−
0.4
−
0.5
−
2
−
1.5
8.0mA
15mA
−
1
Figure 14
Input reflection
coefficient
S
11
= f(
f
),
V
CE
= 1.8 V,
I
C
= 8 / 15 mA
1
1.5
0.5
2
0.4
3
0.3
4
0.2
5
0.45 to 10 GHz
0.1
10
3.5
1
2.4
1.9
0.9
5.5
0.1 0.2
0.3 0.4
0.5
1.5
0.45
2
3
4 5
0
0.45
5.5
−
0.1
−
10
10.0
10.0
−
0.2
−
5
−
4
−
0.3
−
3
−
0.4
−
0.5
−
2
−
1.5
8mA
−
1
15mA
Figure 15
Source impedance for minimum noise figure
Z
S,opt
= f(
f
) ,
V
CE
= 1.8 V,
I
C
= 8 / 15 mA
Datasheet
16
v2.0
2018-09-26
BFP843F
SiGe:C NPN RF bipolar transistor
Electrical characteristics
1
1.5
0.5
2
0.4
12.0
3
12.0
0.3
11.0
10.0
11.0
4
10.0
0.2
5
0.03 to 12 GHz
9.0
8.0
9.0
8.0
0.1
10
0.1 0.2
0.3 0.4
0.5
7.0
1
1.5
2
3
4 5
7.0
6.0
5.0
0
1.0
2.0
3.0
3.0
4.0
6.0
5.0
−
0.1
−
10
1.0
0.03
4.0
0.03
2.0
−
0.2
−
5
−
4
−
0.3
−
3
−
0.4
−
0.5
−
2
−
1.5
8.0mA
15mA
−
1
Figure 16
Output reflection
coefficient
S
22
= f(
f
),
V
CE
= 1.8 V,
I
C
= 8 / 15 mA
2
1.8
1.6
1.4
1.2
1
0.8
I
C
= 15mA
I
C
= 8mA
0.6
0.4
0.2
0
0
1
2
3
4
5
6
7
8
9
10
f [GHz]
Figure 17
Noise figure
NF
min
= f(
f
),
V
CE
= 1.8 V,
Z
S
=
Z
S,opt
,
I
C
= 8 / 15 mA
Datasheet
17
v2.0
2018-09-26
BFP843F
SiGe:C NPN RF bipolar transistor
Electrical characteristics
3
2.8
2.6
2.4
2.2
2
f = 10GHz
f = 5.5GHz
f = 3.5GHz
f = 2.4GHz
f = 0.9GHz
1.8
1.6
1.4
1.2
1
0.8
0.6
0.4
0.2
0
0
5
10
15
20
25
I
C
[mA]
Figure 18
Noise figure
NF
min
= f(
I
C
),
V
CE
= 1.8 V,
Z
S
=
Z
S,opt
,
f
= parameter in GHz
4
f = 10GHz
3.5
3
f = 5.5GHz
f = 3.5GHz
f = 2.4GHz
f = 0.9GHz
2.5
2
1.5
1
0.5
0
0
5
10
15
20
25
I
C
[mA]
Figure 19
Noise figure
NF
50
= f(
I
C
),
V
CE
= 1.8 V,
Z
S
= 50 Ω,
f
= parameter in GHz
Note:
The curves shown in this chapter have been generated using typical devices but shall not be
considered as a guarantee that all devices have identical characteristic curves. T
A
= 25 °C.
Datasheet
18
v2.0
2018-09-26
BFP843F
SiGe:C NPN RF bipolar transistor
Package information TSFP-4-1
4
Package information TSFP-4-1
Figure 20
Package outline
Figure 21
Figure 22
Foot print
Marking layout example
Figure 23
Tape dimensions
Datasheet
19
v2.0
2018-09-26
BFP843F
SiGe:C NPN RF bipolar transistor
Revision history
Revision history
Document
version
Date of
release
Description of changes
2.0
2018-09-26
New datasheet layout.
Datasheet
20
v2.0
2018-09-26
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Edition 2018-09-26
Published by
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