Infineon-Technologies-BFR-740EL3-E6829
| Part # | Infineon-Technologies-BFR-740EL3-E6829 |
Download  | Infineon-Technologies-BFR-740EL3-E6829 |
BFR740EL3
SiGe:C NPN RF bipolar transistor
Product description
The BFR740EL3 is a wideband RF heterojunction bipolar transistor (HBT) available in a
low profile package.
Feature list
•
•
•
•
•
Low noise figure
NF
min
= 0.5 dB at 1.9 GHz 3 V, 6 mA; 0.8 dB at 5.5 GHz, 3 V, 6 mA
High power gain
G
ms
= 20 dB at 5.5 GHz, 3 V, 15 mA
Low profile and small form factor leadless package
High sensitivity low noise laser receiver matrix
High RF transistor
h
FE
controllability
Product validation
Qualified for industrial applications according to the relevant tests of JEDEC47/20/22.
Potential applications
•
•
Wireless communications: WLAN 2.4 GHz and 5-6 GHz bands, WiMax and UWB
Satellite communication systems: GNSS navigation systems (GPS, GLONASS, BeiDou, Galileo), satellite
radio (SDARs, DAB) and C-band LNB
•
•
•
Multimedia applications such as portable TV, CATV and FM radio
ISM applications like RKE, AMR and Zigbee, as well as for emerging wireless applications
Lidar based systems
Device information
Table 1
Part information
Product name / Ordering code
Package
Pin configuration
Marking
Pieces / Reel
BFR740EL3 / BFR740EL3E6829XTSA1
TSLP-3-10 1
= B
2 = C
3 = E
R2
15000
Attention
:
ESD (Electrostatic discharge) sensitive device, observe handling precautions
Datasheet
Please read the Important Notice and Warnings at the end of this document
v1.0
2018-09-26
BFR740EL3
SiGe:C NPN RF bipolar transistor
Table of contents
Table of contents
Product description
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1
Feature list
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Product validation
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1
Potential applications
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1
Device information
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1
Table of contents
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Absolute maximum ratings
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3
Thermal characteristics
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
1
2
3
Electrical characteristics
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
DC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
5
General AC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Frequency dependent AC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
.
6
Characteristic DC diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Characteristic AC diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
3.1
3.2
3.3
3.4
3.5
4
Package information TSLP-3-10
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
Revision history
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
Disclaimer
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
22
Datasheet
2
v1.0
2018-09-26
BFR740EL3
SiGe:C NPN RF bipolar transistor
Absolute maximum ratings
1
Absolute maximum ratings
Table 2
Absolute maximum ratings at
T
A
= 25 °C (unless otherwise specified)
Parameter
Symbol
Values
Min. Max.
Unit Note
or test condition
Collector emitter voltage
V
CEO
–
4.0
3.5
13
V
Open base
T
A
= -55 °C, open base
E-B short circuited
Open emitter
Open collector
–
Collector emitter voltage
Collector base voltage
Emitter base voltage
Base current
V
CES
V
CBO
V
EBO
I
B
13
1.2
4
mA
Collector current
I
C
40
Total power dissipation
1)
Junction temperature
Storage temperature
P
tot
T
J
160
150
mW
T
S
≤ 105 °C
°C
–
T
Stg
-55
Attention
:
Stresses above the max. values listed here may cause permanent damage to the device.
Exposure to absolute maximum rating conditions for extended periods may
affect
device
reliability. Exceeding only one of these values may cause irreversible damage to the integrated
circuit.
1
T
S
is the soldering point temperature.
T
S
is measured on the emitter lead at the soldering point of the PCB.
Datasheet
3
v1.0
2018-09-26
BFR740EL3
SiGe:C NPN RF bipolar transistor
Thermal characteristics
2
Thermal characteristics
Table 3
Thermal resistance
Parameter
Symbol
Values
Unit Note
or test condition
Min. Typ. Max.
Junction – soldering point
R
thJS
–
280
–
K/W
180
160
140
120
100
80
60
40
20
0
0
25
50
75
100
125
150
T [°C]
S
Figure 1
Total power dissipation
P
tot
= f(
T
S
)
Datasheet
4
v1.0
2018-09-26
BFR740EL3
SiGe:C NPN RF bipolar transistor
Electrical characteristics
3
Electrical characteristics
3.1
DC characteristics
Table 4
DC characteristics at
T
A
= 25 °C
Parameter
Symbol
Values
Unit Note
or test condition
Min. Typ. Max.
Collector emitter breakdown voltage
Collector emitter leakage current
V
(BR)CEO
I
CES
4
4.7
–
V
I
C
= 1 mA,
I
B
= 0,
open base
–
1
1
400
1)
nA
40
1)
V
CE
= 13 V,
V
BE
= 0
V
CE
= 5 V,
V
BE
= 0
E-B short circuited
Collector base leakage current
Emitter base leakage current
DC current gain
I
CBO
I
EBO
h
FE
1
40
1)
40
1)
250
V
CB
= 5 V,
I
E
= 0,
open emitter
1
V
EB
= 0.5 V,
I
C
= 0,
open collector
160
210
V
CE
= 3 V,
I
C
= 25 mA,
pulse measured
3.2
General AC characteristics
Table 5
General AC characteristics at
T
A
= 25 °C
Parameter
Symbol
Values
Unit Note
or test condition
Min. Typ. Max.
42
Transition frequency
f
T
–
–
GHz
V
CE
= 3 V,
I
C
= 25 mA,
f
= 2 GHz
Collector base capacitance
C
CB
0.09 0.12 pF
V
CB
= 3 V,
V
BE
= 0,
f
= 1 MHz,
emitter grounded
Collector emitter capacitance
Emitter base capacitance
C
CE
0.3
0.4
–
V
CE
= 3 V,
V
BE
= 0,
f
= 1 MHz,
base grounded
C
EB
V
EB
= 0.5 V,
V
CB
= 0,
f
= 1 MHz,
collector grounded
1
Maximum values not limited by the device but by the short cycle time of the 100% test.
Datasheet
5
v1.0
2018-09-26
BFR740EL3
SiGe:C NPN RF bipolar transistor
Electrical characteristics
3.3
Frequency dependent AC characteristics
Measurement setup is a test fixture with Bias-T’s in a 50 Ω system,
T
A
= 25 °C.
3
VC
VB
GND
Bias-T
Bias-T
RF-
Out
RF-
In
Out
In
1
2
Figure 2
Testing circuit
Table 6
AC characteristics,
V
CE
= 3 V,
f
= 150 MHz
Parameter
Symbol
Values
Min. Typ. Max.
Unit Note
or test condition
Power gain
–
–
dB
G
ms
|
S
21
|
2
35
29.5
I
C
= 15 mA
•
•
Maximum power gain
Transducer gain
Noise figure
NF
min
G
ass
0.45
27.5
I
C
= 6 mA
•
•
Minimum noise figure
Associated gain
Linearity
dBm
OIP
3
OP
1dB
21
3.5
Z
S
= Z
L
= 50 Ω,
I
C
= 15 mA
•
•
3rd order intercept point at output
1 dB gain compression point at output
Table 7
AC characteristics,
V
CE
= 3 V,
f
= 450 MHz
Parameter
Symbol
Values
Unit Note
or test condition
Min. Typ. Max.
Power gain
–
–
dB
I
C
= 15 mA
•
•
Maximum power gain
Transducer gain
G
ms
|
S
21
|
2
31
29
Noise figure
I
C
= 6 mA
•
•
Minimum noise figure
Associated gain
NF
min
G
ass
0.45
26.5
Linearity
dBm
OIP
3
OP
1dB
Z
S
= Z
L
= 50 Ω,
I
C
= 15 mA
•
•
3rd order intercept point at output
1 dB gain compression point at output
21
7
Datasheet
6
v1.0
2018-09-26
BFR740EL3
SiGe:C NPN RF bipolar transistor
Electrical characteristics
Table 8
AC characteristics,
V
CE
= 3 V,
f
= 900 MHz
Parameter
Symbol
Values
Unit Note
or test condition
Min. Typ. Max.
Power gain
–
–
dB
28
27
I
C
= 15 mA
•
•
Maximum power gain
Transducer gain
G
ms
|
S
21
|
2
Noise figure
0.45
25
I
C
= 6 mA
•
•
Minimum noise figure
Associated gain
NF
min
G
ass
Linearity
dBm
OIP
3
OP
1dB
Z
S
= Z
L
= 50 Ω,
I
C
= 15 mA
•
•
3rd order intercept point at output
1 dB gain compression point at output
22.5
8
Table 9
AC characteristics,
V
CE
= 3 V,
f
= 1.5 GHz
Parameter
Symbol
Values
Unit Note
or test condition
Min. Typ. Max.
Power gain
–
–
dB
I
C
= 15 mA
•
•
Maximum power gain
Transducer gain
G
ms
|
S
21
|
2
25.5
25
Noise figure
0.5
22.5
I
C
= 6 mA
•
•
Minimum noise figure
Associated gain
NF
min
G
ass
Linearity
dBm
OIP
3
OP
1dB
Z
S
= Z
L
= 50 Ω,
I
C
= 15 mA
•
•
3rd order intercept point at output
1 dB gain compression point at output
23
8
Table 10
AC characteristics,
V
CE
= 3 V,
f
= 1.9 GHz
Parameter
Symbol
Values
Unit Note
or test condition
Min. Typ. Max.
Power gain
–
–
dB
I
C
= 15 mA
•
•
Maximum power gain
Transducer gain
G
ms
|
S
21
|
2
24.5
23.5
Noise figure
I
C
= 6 mA
•
•
Minimum noise figure
Associated gain
NF
min
G
ass
0.5
21
Linearity
dBm
OIP
3
OP
1dB
Z
S
= Z
L
= 50 Ω,
I
C
= 15 mA
•
•
3rd order intercept point at output
1 dB gain compression point at output
23
8
Datasheet
7
v1.0
2018-09-26
BFR740EL3
SiGe:C NPN RF bipolar transistor
Electrical characteristics
Table 11
AC characteristics,
V
CE
= 3 V,
f
= 2.4 GHz
Parameter
Symbol
Values
Unit Note
or test condition
Min. Typ. Max.
Power gain
–
–
dB
I
C
= 15 mA
•
•
Maximum power gain
Transducer gain
G
ms
|
S
21
|
2
23.5
21.5
Noise figure
I
C
= 6 mA
•
•
Minimum noise figure
Associated gain
NF
min
G
ass
0.5
19.5
Linearity
dBm
OIP
3
OP
1dB
23
8
Z
S
= Z
L
= 50 Ω,
I
C
= 15 mA
•
•
3rd order intercept point at output
1 dB gain compression point at output
Table 12
AC characteristics,
V
CE
= 3 V,
f
= 3.5 GHz
Parameter
Symbol
Values
Unit Note
or test condition
Min. Typ. Max.
Power gain
–
–
dB
I
C
= 15 mA
•
•
Maximum power gain
Transducer gain
G
ms
|
S
21
|
2
22
18.5
Noise figure
0.6
16.5
I
C
= 6 mA
•
•
Minimum noise figure
Associated gain
NF
min
G
ass
Linearity
dBm
OIP
3
OP
1dB
Z
S
= Z
L
= 50 Ω,
I
C
= 15 mA
•
•
3rd order intercept point at output
1 dB gain compression point at output
24.5
9
Table 13
AC characteristics,
V
CE
= 3 V,
f
= 5.5 GHz
Parameter
Symbol
Values
Unit Note
or test condition
Min. Typ. Max.
Power gain
–
–
dB
I
C
= 15 mA
•
•
Maximum power gain
Transducer gain
G
ms
|
S
21
|
2
20
14.5
Noise figure
I
C
= 6 mA
•
•
Minimum noise figure
Associated gain
NF
min
G
ass
0.8
13
Linearity
dBm
OIP
3
OP
1dB
Z
S
= Z
L
= 50 Ω,
I
C
= 15 mA
•
•
3rd order intercept point at output
1 dB gain compression point at output
25
9.5
Datasheet
8
v1.0
2018-09-26
BFR740EL3
SiGe:C NPN RF bipolar transistor
Electrical characteristics
Table 14
AC characteristics,
V
CE
= 3 V,
f
= 10 GHz
Parameter
Symbol
Values
Unit Note
or test condition
Min. Typ. Max.
Power gain
–
–
dB
I
C
= 15 mA
•
•
Maximum power gain
Transducer gain
G
ma
|
S
21
|
2
13
9
Noise figure
I
C
= 6 mA
•
•
Minimum noise figure
Associated gain
NF
min
G
ass
1.3
8.5
Linearity
dBm
OIP
3
OP
1dB
Z
S
= Z
L
= 50 Ω,
I
C
= 15 mA
•
•
3rd order intercept point at output
1 dB gain compression point at output
24
9
Table 15
AC characteristics,
V
CE
= 3 V,
f
= 12 GHz
Parameter
Symbol
Values
Unit Note
or test condition
Min. Typ. Max.
Power gain
–
–
dB
I
C
= 15 mA
•
•
Maximum power gain
Transducer gain
G
ma
|
S
21
|
2
11
7
Noise figure
I
C
= 6 mA
•
•
Minimum noise figure
Associated gain
NF
min
G
ass
1.5
7.5
Linearity
dBm
OIP
3
OP
1dB
Z
S
= Z
L
= 50 Ω,
I
C
= 15 mA
•
•
3rd order intercept point at output
1 dB gain compression point at output
20.5
6.5
Note:
G
ms
= IS
21
/ S
12
I for k < 1; G
ma
= IS
21
/ S
12
I(k-(k
2
-1)
1/2
) for k > 1. In order to get the NF
min
values stated in
this chapter, the test fixture losses have been subtracted from all measured results. OIP
3
value
depends on termination of all intermodulation frequency components. Termination used for this
measurement is 50 Ω from 0.2 MHz to 12 GHz.
Datasheet
9
v1.0
2018-09-26
BFR740EL3
SiGe:C NPN RF bipolar transistor
Electrical characteristics
3.4
Characteristic DC diagrams
30
25
20
15
10
5
120µA
100µA
80µA
60µA
40µA
20µA
0
0
0.5
1
1.5
2
2.5
3
3.5
4
V
[V]
CE
Figure 3
Collector current vs. collector emitter voltage
I
C
= f(
V
CE
),
I
B
= parameter
10
3
10
2
10
−
3
10
−
2
I [A]
10
−
1
C
Figure 4
DC current gain
h
FE
= f(
I
C
),
V
CE
= 3 V
Datasheet
10
v1.0
2018-09-26
BFR740EL3
SiGe:C NPN RF bipolar transistor
Electrical characteristics
10
2
10
1
10
0
10
−
1
10
−
2
10
−
3
10
−
4
0.5
0.55
0.6
0.65
0.7
[V]
0.75
0.8
0.85
0.9
V
BE
Figure 5
Collector current vs. base emitter forward voltage
I
C
= f(
V
BE
),
V
CE
= 2 V
10
0
10
−
1
10
−
2
10
−
3
10
−
4
10
−
5
10
−
6
10
−
7
0.5
0.55
0.6
0.65
0.7
[V]
0.75
0.8
0.85
0.9
V
BE
Figure 6
Base current vs. base emitter forward voltage
I
B
= f(
V
BE
),
V
CE
= 2 V
Datasheet
11
v1.0
2018-09-26
BFR740EL3
SiGe:C NPN RF bipolar transistor
Electrical characteristics
10
−
5
10
−
6
10
−
7
10
−
8
10
−
9
10
−
10
10
−
11
10
−
12
1
1.5
2
2.5
3
V
[V]
EB
Figure 7
Base current vs. base emitter reverse voltage
I
B
= f(
V
EB
),
V
CE
= 2 V
Datasheet
12
v1.0
2018-09-26
BFR740EL3
SiGe:C NPN RF bipolar transistor
Electrical characteristics
3.5
Characteristic AC diagrams
45
40
35
30
25
20
15
10
5
4.00V
3.00V
2.50V
2.00V
1.00V
0
0
5
10
15
20
25
30
35
40
45
I [
m
A
]
C
Figure 8
Transition frequency
f
T
= f(
I
C
),
f
= 2 GHz,
V
CE
= parameter
28
26
24
22
20
18
16
14
12
10
8
2
V
,
2
400
M
Hz
3
V
,
2
400
M
Hz
2
V
,
5
500
M
Hz
3
V
,
5
500
M
Hz
6
4
2
0
0
5
10
15
20
25
30
I [
m
A
]
C
Figure 9
3rd order intercept point at output
OIP
3
= f(
I
C
),
Z
S
=
Z
L
= 50 Ω,
V
CE
,
f
= parameter
Datasheet
13
v1.0
2018-09-26
BFR740EL3
SiGe:C NPN RF bipolar transistor
Electrical characteristics
30
25
20
15
10
5
23
23
22
21
21
20
20
3.5
1.5
2
2.5
3
4
V
[V]
CE
Figure 10
3rd order intercept point at output
OIP
3
[dBm] = f(
I
C
,
V
CE
),
Z
S
=
Z
L
= 50 Ω,
f
= 5.5 GHz
30
25
20
10
15
9
9
8
7
10
5
6
6
5
5
5
4
4
3
3
2
2
2
1
1
1
1
1.5
2
2.5
3
3.5
4
V
[V]
CE
Figure 11
Compression point at output
OP
1dB
[dBm] = f(
I
C
,
V
CE
),
Z
S
=
Z
L
= 50 Ω,
f
= 5.5 GHz
Datasheet
14
v1.0
2018-09-26
BFR740EL3
SiGe:C NPN RF bipolar transistor
Electrical characteristics
0.2
0.16
0.12
0.08
0.04
0
0
0.4 0.8 1.2 1.6
2
2.4 2.8 3.2 3.6
4
V
[V]
CB
Figure 12
Collector base capacitance
C
CB
= f(
V
CB
),
f
= 1 MHz
35
30
G
ms
25
20
G
2
ma
|S
|
21
15
10
5
0
0
1
2
3
4
5
6
7
8
9
10 11 12
f [
G
Hz]
Figure 13
Gain
G
ma
,
G
ms
, I
S
21
I
2
= f(
f
),
V
CE
= 3 V,
I
C
= 15 mA
Datasheet
15
v1.0
2018-09-26
BFR740EL3
SiGe:C NPN RF bipolar transistor
Electrical characteristics
40
35
30
25
20
15
10
5
0.15GHz
0.45GHz
0.90GHz
1.50GHz
1.90GHz
2.40GHz
3.50GHz
5.50GHz
10.00GHz
12.00GHz
0
0
5
10
15
20
25
30
35
40
45
50
I [
m
A
]
C
Figure 14
Maximum power gain
G
max
= f(
I
C
),
V
CE
= 3 V,
f
= parameter
40
35
30
25
20
15
10
5
0.15GHz
0.45GHz
0.90GHz
1.50GHz
1.90GHz
2.40GHz
3.50GHz
5.50GHz
10.00GHz
12.00GHz
0
0
0.5
1
1.5
2
2.5
[V]
3
3.5
4
4.5
5
V
CE
Figure 15
Maximum power gain
G
max
= f(
V
CE
),
I
C
= 15 mA,
f
= parameter
Datasheet
16
v1.0
2018-09-26
BFR740EL3
SiGe:C NPN RF bipolar transistor
Electrical characteristics
1
1.5
0.5
2
0.4
0.3
3
12.0
12.0
4
0.2
0.1
5
1 to 12 GHz
S
t
e
p: 1GHz
10
0.1 0.2
0.3 0.4
0.5
1
1.5
2
3
4 5
0
0.1
−
10
−
0.1
0.1
−
0.2
−
5
−
4
−
0.3
−
3
1.0
1.0
−
0.4
−
0.5
−
2
−
1.5
6.0mA
−
1
15.0mA
Figure 16
Input reflection
coefficient
S
11
= f(
f
),
V
CE
= 3 V,
I
C
= 6 / 15 mA
1
1.5
0.5
2
0.4
3
0.3
4
0.2
5
1 to 12 GHz
S
t
e
p: 1GHz
0.1
10
0.1
12.0
0.1 0.2
0.3 0.4
0.5
12.0
1
1.5
2
3
4 5
0
0.1
−
10
−
0.1
−
0.2
−
5
−
4
1.0
1.0
−
0.3
−
3
−
0.4
−
0.5
−
2
6.0mA
−
1.5
−
1
15.0mA
Figure 17
Output reflection
coefficient
S
22
= f(
f
),
V
CE
= 3 V,
I
C
= 6 / 15 mA
Datasheet
17
v1.0
2018-09-26
BFR740EL3
SiGe:C NPN RF bipolar transistor
Electrical characteristics
1
1.5
0.5
2
0.4
0.3
3
4
5.5
0.2
0.1
5
3.5
2.4
8.0
1.9
1.5
5.5
10
3.5
2.4
1.9
1.5
10.0
0.1 0.2
0.3 0.4
0.5
8.0
0.9
0.9
1.5
0.5
1
2
3
4 5
0.5
0
10.0
12.0
12.0
−
0.1
−
10
−
0.2
−
5
−
4
−
0.3
−
3
−
0.4
6mA
−
0.5
−
2
15mA
−
1.5
−
1
Figure 18
Source impedance for minimum noise figure
Z
S,opt
= f(
f
),
V
CE
= 3 V,
I
C
= 6 / 15 mA
2
1.8
1.6
1.4
1.2
1
0.8
0.6
I =
15mA
C
0.4
0.2
0
I =
6mA
C
0
2
4
6
8
10
12
f [
G
Hz]
Figure 19
Noise figure
NF
min
= f(
f
),
V
CE
= 3 V,
Z
S
=
Z
S,opt
,
I
C
= 6 / 15 mA
Datasheet
18
v1.0
2018-09-26
BFR740EL3
SiGe:C NPN RF bipolar transistor
Electrical characteristics
3
2.8
2.6
2.4
2.2
2
f = 12GHz
f = 10GHz
f = 5.5GHz
f = 3.5GHz
f = 2.4GHz
f = 0.9GHz
1.8
1.6
1.4
1.2
1
0.8
0.6
0.4
0.2
0
0
5
10
I [
m
A
]
15
20
C
Figure 20
Noise figure
NF
min
= f(
I
C
),
V
CE
= 3 V,
Z
S
=
Z
S,opt
,
f
= parameter
3
f = 12GHz
2.8
f = 10GHz
2.6
f = 5.5GHz
2.4
f = 3.5GHz
2.2
f = 2.4GHz
2
f = 0.9GHz
1.8
1.6
1.4
1.2
1
0.8
0.6
0.4
0.2
0
0
5
10
15
20
I [
m
A
]
C
Figure 21
Noise figure
NF
50
= f(
I
C
),
V
CE
= 3 V,
Z
S
= 50 Ω,
f
= parameter
Note:
The curves shown in this chapter have been generated using typical devices but shall not be
considered as a guarantee that all devices have identical characteristic curves. T
A
= 25 °C.
Datasheet
19
v1.0
2018-09-26
BFR740EL3
SiGe:C NPN RF bipolar transistor
Package information TSLP-3-10
4
Package information TSLP-3-10
Figure 22
Package outline
Figure 23
Figure 24
Foot print
Marking layout example
Figure 25
Tape dimensions
Note:
The marking layout is an example. For the real marking code refer to the device information on the
first page. The number of characters shown in the layout example is not necessarily the real one. The
marking layout can consist of less characters.
Datasheet
20
v1.0
2018-09-26
BFR740EL3
SiGe:C NPN RF bipolar transistor
Revision history
Revision history
Document
version
Date of
release
Description of changes
1.0
2018-09-26
First datasheet release.
Datasheet
21
v1.0
2018-09-26
Trademarks
All referenced product or service names and trademarks are the property of their respective owners.
Edition 2018-09-26
Published by
IMPORTANT NOTICE
WARNINGS
The information given in this document shall in no
event be regarded as a guarantee of conditions or
characteristics
(“Beschaffenheitsgarantie”)
.
With respect to any examples, hints or any typical values
stated herein and/or any information regarding the
application of the product, Infineon Technologies
hereby disclaims any and all warranties and liabilities of
any kind, including without limitation warranties of
non-infringement of intellectual property rights of any
third party.
In addition, any information given in this document is
subject to customer’s compliance with its obligations
stated in this document and any applicable legal
requirements, norms and standards concerning
customer’s products and any use of the product of
Infineon Technologies in customer’s applications.
Due to technical requirements products may contain
dangerous substances. For information on the types
in question please contact your nearest Infineon
Technologies
office.
Except as otherwise explicitly approved by Infineon
Technologies in a written document signed by
authorized representatives of Infineon Technologies,
Infineon Technologies’ products may not be used in
any applications where a failure of the product or
any consequences of the use thereof can reasonably
be expected to result in personal injury
Infineon Technologies AG
81726 Munich, Germany
©
2018 Infineon Technologies AG
All Rights Reserved.
Do you have a question about any
aspect of this document?
Document reference
IFX-iws1532679363292
The data contained in this document is exclusively
intended for technically trained
staff.
It is the
responsibility of customer’s technical departments to
evaluate the suitability of the product for the intended
application and the completeness of the product
information given in this document with respect to such
application.
