Infineon-Technologies-BFR106E6327
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BFR106
Low Noise Silicon Bipolar RF Transistor
•
High linearity low noise RF transistor
•
22 dBm OP1dB and 31 dBm OIP3
@ 900 MHz, 8 V, 70 mA
•
For UHF / VHF applications
•
Driver for multistage amplifiers
•
For linear broadband and antenna amplifiers
•
Collector design supports 5 V supply voltage
•
Pb-free (RoHS compliant) package
•
Qualification report according to AEC-Q101 available
ESD
(
E
lectro
s
tatic
d
ischarge) sensitive device, observe handling precaution!
Type
BFR106
Marking
R7s
Pin Configuration
2=E 3=C
Package
SOT23
1=B
Maximum Ratings
at
T
= 25 °C, unless otherwise specified
Parameter
Symbol
Value
Unit
V
Collector-emitter voltage,
V
CEO
T
= 25°C
16
15
20
20
3
210
21
700
A
T
= -55°C
A
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation
V
V
V
CES
CBO
EBO
mA
mW
°C
I
C
I
B
1)
P
tot
T
≤
76 °C
Junction temperature
Storage temperature
S
150
-55 … 150
T
J
T
Thermal Resistance
Parameter
Junction – soldering point
Symbol
Value
105
Unit
K/W
2)
R
thJS
1
T
S
is measured on the collector lead at the soldering point to the pcb
2
For calculation of
R
hJS
please refer to Application Note AN077 (Thermal Resistance Calculation)
t
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BFR106
Electrical Characteristics
at
T
= 25 °C, unless otherwise specified
A
Parameter
Symbol
Values
Unit
min.
typ. max.
DC Characteristics
15
–
–
V
Collector-emitter breakdown voltage
V
(BR)CEO
I
= 1 mA,
I
= 0
C
B
µA
Collector-emitter cutoff current
I
CES
V
V
= 20 V,
V
= 0
–
–
–
–
1
CE
CE
BE
= 10 V,
V
= 0
0.001 0.03
BE
1
30
30
nA
–
Collector-base cutoff current
= 10 V,
I
= 0
I
CBO
V
CB
E
–
1
Emitter-base cutoff current
= 2 V,
I
= 0
I
EBO
V
EB
C
70
100
140
DC current gain
I
= 70 mA,
V
= 8 V, pulse measured
h
FE
C
CE
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BFR106
Electrical Characteristics
at
T
= 25 °C, unless otherwise specified
A
Parameter
Symbol
Values
Unit
min.
typ. max.
AC Characteristics
(verified by random sampling)
3.5
5
–
GHz
Transition frequency
f
T
I
= 70 mA,
V
= 8 V,
f
= 500 MHz
C
CE
–
–
–
0.85
1.2 pF
Collector-base capacitance
= 10 V,
f
= 1 MHz,
V
= 0 ,
emitter grounded
C
C
C
cb
ce
eb
V
CB
BE
0.27
3.9
–
–
Collector emitter capacitance
V
= 10 V,
f
= 1 MHz,
V
= 0 ,
CE
BE
base grounded
Emitter-base capacitance
V
= 0.5 V,
f
= 1 MHz,
V
= 0 ,
EB
CB
collector grounded
dB
Minimum noise figure
NF
min
I
= 20 mA,
V
= 8 V,
Z
=
Z
,
C
CE
S
Sopt
f
= 900 MHz
–
–
1.8
3
–
–
I
= 20 mA,
V
= 8 V,
Z
=
Z
,
C
CE
S
Sopt
f
= 1.8 GHz
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BFR106
Electrical Characteristics
at
T
= 25 °C, unless otherwise specified
Parameter
Symbol
Values
typ. max.
Unit
min.
AC Characteristics
(verified by random sampling)
Power gain, maximum available
1)
dB
G
ma
I
= 70 mA,
V
= 8 V,
Z
=
Z
f
= 900 MHz
,
Z
=
Z
,
C
CE
S
Sopt
L
Lopt
Lopt
–
–
13
–
–
I
= 70 mA,
V
= 8 V,
Z
=
Z
,
Z
=
Z
,
C
CE
S
Sopt
L
f
= 1.8 GHz
8.5
2
Transducer gain
|
S
|
dB
21e
I
= 70 mA,
V
= 8 V,
Z
=
Z
= 50
Ω
,
C
CE
S
L
f
= 900 MHz
–
10.5
–
I
= 70 mA,
V
= 8 V,
Z
=
Z
= 50
Ω
,
C
CE
S
L
f
= 1.8 GHz
–
–
5
–
–
2)
Third order intercept point at output
= 8 V,
I
= 70 mA,
f
= 0.9 GHz ,
IP
31
dBm
3
V
CE
C
Z =Z =50
Ω
S
L
1dB compression point
P
–
22
–
-1dB
I
= 70 mA,
V
= 8 V, Z
=Z =50
Ω
,
C
CE
S
L
f
= 0.9 GHz
1
1/2
| (k-(k²-1)
)
G
= |
S
/
S
21e 12e
ma
2
IP
value depends on termination of all intermodulation frequency components.
3
Termination used for this measurement is 50
Ω
from 0.1 MHz to 6 GHz
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BFR106
Total power dissipation
P
=
ƒ
(
T
)
tot
S
750
mW
600
550
500
450
400
350
300
250
200
150
100
50
0
°C
0
15 30 45 60 75 90
105 120
150
T
S
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Package SOT23
BFR106
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BFR106
Edition 2009-11-16
Published by
Infineon Technologies AG
81726 Munich, Germany
2009 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee
of conditions or characteristics. With respect to any examples or hints given herein,
any typical values stated herein and/or any information regarding the application of
the device, Infineon Technologies hereby disclaims any and all warranties and
liabilities of any kind, including without limitation, warranties of non-infringement of
intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices,
please contact the nearest Infineon Technologies Office (
<www.infineon.com>
).
Warnings
Due to technical requirements, components may contain dangerous substances.
For information on the types in question, please contact the nearest Infineon
Technologies Office.
Infineon Technologies components may be used in life-support devices or systems
only with the express written approval of Infineon Technologies, if a failure of such
components can reasonably be expected to cause the failure of that life-support
device or system or to affect the safety or effectiveness of that device or system.
Life support devices or systems are intended to be implanted in the human body or
to support and/or maintain and sustain and/or protect human life. If they fail, it is
reasonable to assume that the health of the user or other persons may be
endangered.
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