Infineon-Technologies-BFR182WH6327XTSA1
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BFR182W
Low Noise Silicon Bipolar RF Transistor
•
For low noise, high-gain broadband amplifiers at
collector currents from 1 mA to 20 mA
3
2
1
•
f
= 8 GHz,
NF
= 0.9 dB at 900 MHz
min
T
•
Pb-free (RoHS compliant) and halogen-free package
with visible leads
•
Qualification report according to AEC-Q101 available
ESD
(
E
lectro
s
tatic
d
ischarge) sensitive device, observe handling precaution!
Type
BFR182W
Marking
RGs
Pin Configuration
2=E 3=C
Package
SOT323
1=B
Maximum Ratings
at
T
= 25 °C, unless otherwise specified
Parameter
Symbol
Value
Unit
12
20
20
2
35
4
V
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
V
V
V
V
CEO
CES
CBO
EBO
mA
mW
°C
I
C
Base current
Total power dissipation
I
B
1)
250
P
tot
T
≤
90 °C
S
150
-65 … 150
-65 … 150
Junction temperature
Ambient temperature
Storage temperature
T
J
T
A
T
Thermal Resistance
Parameter
Junction – soldering point
Symbol
Value
240
Unit
K/W
2)
R
thJS
1
T
is measured on the collector lead at the soldering point to the pcb
S
2
For the definition of
R
please refer to Application Note AN077 (Thermal Resistance Calculation)
thJS
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BFR182W
Electrical Characteristics
at
T
= 25 °C, unless otherwise specified
A
Parameter
Symbol
Values
typ. max.
Unit
min.
DC Characteristics
12
–
–
V
Collector-emitter breakdown voltage
V
(BR)CEO
I
= 1 mA,
I
= 0
C
B
nA
Collector-emitter cutoff current
I
CES
V
V
= 4 V,
V
= 0
–
–
1
5
30
70
CE
BE
= 15 V,
V
= 0 V,
T
= 85 °C
CE
BE
A
(verified by random sampling)
–
–
1
–
30
50
Collector-base cutoff current
I
CBO
V
= 4 V,
I
= 0
E
CB
Emitter-base cutoff current
= 1 V,
I
= 0
I
EBO
V
EB
C
70
100
140
–
DC current gain
I
= 10 mA,
V
= 8 V, pulse measured
h
FE
C
CE
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BFR182W
Electrical Characteristics
at
T
= 25 °C, unless otherwise specified
Parameter
Symbol
Values
typ. max.
Unit
min.
AC Characteristics
(verified by random sampling)
Transition frequency
6
8
–
GHz
f
T
I
= 15 mA,
V
= 8 V,
f
= 500 MHz
C
CE
–
–
–
0.34
0.5 pF
Collector-base capacitance
= 10 V,
f
= 1 MHz,
V
= 0 ,
emitter grounded
C
C
C
cb
ce
eb
V
CB
BE
0.26
0.8
–
–
Collector emitter capacitance
V
= 10 V,
f
= 1 MHz,
V
= 0 ,
CE
BE
base grounded
Emitter-base capacitance
V
= 0.5 V,
f
= 1 MHz,
V
= 0 ,
EB
CB
collector grounded
dB
Minimum noise figure
NF
min
I
= 3 mA,
V
= 8 V,
Z
=
Z
f
= 900 MHz
,
,
C
CE
S
Sopt
–
0.9
–
–
I
= 3 mA,
V
= 8 V,
Z
=
Z
C
CE
S
Sopt
f
= 1.8 GHz
–
–
1.3
19
1)
Power gain, maximum stable
G
G
–
dB
dB
ms
I
= 10 mA,
V
= 8 V,
Z
=
Z
,
Z
=
Z
,
,
C
CE
S
Sopt
L
Lopt
f
= 900 MHz
2)
–
12.5
–
Power gain, maximum available
ma
I
= 10 mA,
V
= 8 V,
Z
=
Z
,
Z
=
Z
L
C
CE
S
Sopt
Lopt
f
= 1.8 GHz
2
Transducer gain
|
S
|
dB
21e
I
= 10 mA,
V
= 8 V,
Z
=
Z
= 50
Ω
,
C
CE
S
L
f
= 900 MHz
–
–
15.5
10
–
–
I
= 10 mA,
V
= 8 V,
Z
=
Z
= 50
Ω
,
C
CE
S
L
f
= 1.8 GHz
1
G
G
= |
S
/
S
|
21 12
ms
2
1/2
| (k-(k²-1)
)
= |
S
/
S
21e 12e
ma
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BFR182W
Total power dissipation
P
=
ƒ
(
T
)
Permissible Pulse Load
R
=
ƒ
(
t
)
tot
S
thJS
p
10
3
300
mW
K/W
200
150
100
50
10
2
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D = 0
10
1
0
10
-7
10
-6
10
-5
10
-4
10
-3
10
-2
10
0
°C
s
0
20
40
60
80
100 120
150
T
t
S
p
Permissible Pulse Load
P
/
P
=
ƒ
(
t
)
totmax totDC
p
10
2
–
D = 0
0.005
0.01
0.02
0.05
0.1
10
1
0.2
0.5
10
0
10
-7
10
-6
10
-5
10
-4
10
-3
10
-2
10
0
s
t
p
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Package SOT323
BFR182W
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BFR182W
Edition 2009-11-16
Published by
Infineon Technologies AG
81726 Munich, Germany
2009 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee
of conditions or characteristics. With respect to any examples or hints given herein,
any typical values stated herein and/or any information regarding the application of
the device, Infineon Technologies hereby disclaims any and all warranties and
liabilities of any kind, including without limitation, warranties of non-infringement of
intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices,
please contact the nearest Infineon Technologies Office (
<www.infineon.com>
).
Warnings
Due to technical requirements, components may contain dangerous substances.
For information on the types in question, please contact the nearest Infineon
Technologies Office.
Infineon Technologies components may be used in life-support devices or systems
only with the express written approval of Infineon Technologies, if a failure of such
components can reasonably be expected to cause the failure of that life-support
device or system or to affect the safety or effectiveness of that device or system.
Life support devices or systems are intended to be implanted in the human body or
to support and/or maintain and sustain and/or protect human life. If they fail, it is
reasonable to assume that the health of the user or other persons may be
endangered.
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