Infineon-Technologies-BFR193E6327HTSA1

BFR193  

Low Noise Silicon Bipolar RF Transistor  

•

For low noise, high-gain amplifiers up to 2 GHz  

•

For linear broadband amplifiers  

•

f

= 8 GHz,

NF  

= 1 dB at 900 MHz  

T

min  

•

Pb-free (RoHS compliant) package  

•

Qualification report according to AEC-Q101 available  

ESD

(

E

lectro

s

tatic

d

ischarge) sensitive device, observe handling precaution!  

Type  

BFR193  

Marking  

RCs  

Pin Configuration  

2 = E

 

3 = C  

Package  

SOT23  

1 = B  

Maximum Ratings

at

T

= 25 °C, unless otherwise specified  

A

Parameter  

Symbol  

Value  

12  

20  

20  

2

80  

10  

580  

Unit  

V

Collector-emitter voltage  

Collector-emitter voltage  

Collector-base voltage  

Emitter-base voltage  

Collector current  

V

V

V

V

CEO  

CES  

CBO  

EBO  

mA  

mW  

°C  

I

C

Base current  

Total power dissipation  

I

B

1)  

P

tot  

T

≤

69°C  

S

150  

-55 … 150  

Junction temperature  

Storage temperature  

T

J

T

Stg  

Thermal Resistance  

Parameter  

Junction – soldering point  

Symbol  

Value  

140  

Unit  

K/W  

2)  

R

thJS  

1

T

is measured on the collector lead at the soldering point to the pcb  

S

2

For calculation of

R  

please refer to Application Note AN077 (Thermal Resistance Calculation)  

thJS  

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BFR193  

Electrical Characteristics

at

T

= 25 °C, unless otherwise specified  

A

Parameter  

Symbol  

Values  

Unit  

min.  

typ. max.  

DC Characteristics  

12  

–

–

–

V

Collector-emitter breakdown voltage  

V

(BR)CEO  

I

= 1 mA,

I

= 0  

C

B

–

100 µA  

100 nA  

Collector-emitter cutoff current  

= 20 V,

V

= 0  

I

CES  

V

CE  

BE  

–

–

–

Collector-base cutoff current  

= 10 V,

I

= 0  

I

CBO  

V

CB  

E

–

1

µA  

–

Emitter-base cutoff current  

= 1 V,

I

= 0  

I

EBO  

V

EB  

C

70  

100  

140  

DC current gain  

I

= 30 mA,

V

= 8 V, pulse measured  

h

FE  

C

CE  

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BFR193  

Electrical Characteristics

at

T

= 25 °C, unless otherwise specified  

A

Parameter  

Symbol  

Values  

typ. max.  

Unit  

min.  

AC Characteristics

(verified by random sampling)  

6

8

–

GHz  

pF  

Transition frequency  

f

T

I

= 50 mA,

V

= 8 V,

f

= 500 MHz  

C

CE  

–

–

–

0.66  

1

Collector-base capacitance  

= 10 V,

f

= 1 MHz,

V

= 0 ,  

emitter grounded  

C

C

C

cb  

ce  

eb  

V

CB  

BE  

0.28  

2.25  

–

–

Collector emitter capacitance  

V

= 10 V,

f

= 1 MHz,

V

= 0 ,  

CE  

BE  

base grounded  

Emitter-base capacitance  

V

= 0.5 V,

f

= 1 MHz,

V

= 0 ,  

EB  

CB  

collector grounded  

dB  

Minimum noise figure  

NF  

min  

I

= 10 mA,

V

= 8 V,

Z

=

Z  

,

C

CE  

S

Sopt  

f

= 900 MHz  

f

= 1.8  

–

–

1

1.6  

–

–

1)  

Power gain, maximum available  

G

ma  

I

= 30 mA,

V

= 8 V,

Z

=

Z  

Z

=

Z  

,

C

CE  

S

Sopt,  

L

Lopt  

f

= 900 MHz  

f

= 1.8 GHz  

–

–

15  

10  

–

–

2

Transducer gain  

|

S  

|

dB  

21e  

I

= 30 mA,

V

= 8 V,

Z

=

Z

= 50

Ω

,  

C

CE  

S

L

f

= 900 MHz  

f

= 1.8 GHz  

–

–

13  

7.5  

–

–

2)  

Third order intercept point at output  

IP  

–

30  

–

dBm  

3

I

= 30 mA,

V

= 8 V,

Z

=

Z

= 50

Ω

,  

C

CE  

S

L

f

= 0.9 GHz  

1dB Compression point  

P

-1dB  

–

13  

–

I

= 30 mA,

V

= 8 V,

Z

=

Z

= 50

Ω

,  

C

CE  

S

L

f

= 0.9 GHz  

1

1/2  

= |

S

/

S

| (k-(k²-1)  

21 12  

G

)

ma  

2

IP3 value depends on termination of all intermodulation frequency components.  

Termination used for this measurement is 50

Ω

from 0.2 MHz to 12 GHz  

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BFR193  

Total power dissipation

P

=

ƒ

(

T

)  

tot  

S

600  

mW  

400  

300  

200  

100  

0

°C  

0

20  

40  

60  

80  

100 120  

150  

T

S

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Package SOT23  

BFR193  

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BFR193  

Edition 2009-11-16  

Published by  

Infineon Technologies AG  

81726 Munich, Germany  



2009 Infineon Technologies AG  

All Rights Reserved.  

Legal Disclaimer  

The information given in this document shall in no event be regarded as a guarantee  

of conditions or characteristics. With respect to any examples or hints given herein,  

any typical values stated herein and/or any information regarding the application of  

the device, Infineon Technologies hereby disclaims any and all warranties and  

liabilities of any kind, including without limitation, warranties of non-infringement of  

intellectual property rights of any third party.  

Information  

For further information on technology, delivery terms and conditions and prices,  

please contact the nearest Infineon Technologies Office (

<www.infineon.com>

).  

Warnings  

Due to technical requirements, components may contain dangerous substances.  

For information on the types in question, please contact the nearest Infineon  

Technologies Office.  

Infineon Technologies components may be used in life-support devices or systems  

only with the express written approval of Infineon Technologies, if a failure of such  

components can reasonably be expected to cause the failure of that life-support  

device or system or to affect the safety or effectiveness of that device or system.  

Life support devices or systems are intended to be implanted in the human body or  

to support and/or maintain and sustain and/or protect human life. If they fail, it is  

reasonable to assume that the health of the user or other persons may be  

endangered.  

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