Infineon-Technologies-BFS17PE6327HTSA1
| Part # | Infineon-Technologies-BFS17PE6327HTSA1 |
Download  | Infineon-Technologies-BFS17PE6327HTSA1 |
BFS17P
NPN Silicon RF Transistor
Features
•
•
•
•
•
•
•
•
•
Maximum collector-emitter voltage V
CE0
= 15 V
Maximum collector current I
C
= 25 mA
Noise figure NF = 3.5 dB
3rd order output intercept point OIP
3
= 21.5 dBm
1 dB output compression point P
-1dB
= 10 dBm
Transition frequency f
T
= 1.4 GHz
Maximum total power dissipation P
tot
= 280 mW
Package: SOT23
Pb-free (RoHS compliant) package
Potential Applications
•
•
For broadband amplifiers up to 1 GHz at collector currents from 1 mA to 20 mA
For mixers and oscillators in sub-GHz applications
Device Information
ESD
(
E
lectro
s
tatic
d
ischarge) sensitive device, observe handling precaution!
Type / Ordering code
Marking
Pin Configuration
2=E 3=C
Package
BFS17P / BFS17PE6327HTSA1
MCs
1=B
SOT23
Datasheet
Please read the Important Notice and Warnings at the end of this document
Revision 1.1
2017-06-01
BFS17P
NPN Silicon RF Transistor
Table of contents
Table of contents
Features
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1
Potential Applications
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1
Device Information
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Table of contents
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Maximum Ratings
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
3
Thermal Resistance
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical Characteristics
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .4
Typical characteristics diagrams
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
5
1
2
3
4
5
Package information
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .9
5.1
SOT23 package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
.
9
Revision History
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Trademarks
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Datasheet
2
Revision 1.1
2017-06-01
BFS17P
NPN Silicon RF Transistor
Maximum Ratings
1
Maximum Ratings
Table 1
Maximum Rating at
T
A
= 25 °C, unless otherwise specified
Parameter
Symbol
V
CEO
V
CBO
V
EBO
I
C
Values
15
Unit
Note or Test Condition
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
V
–
–
–
–
25
2.5
25
mA
Peak collector current
Total power dissipation
1)
Junction temperature
Ambient temperature
Storage temperature
I
CM
50
P
tot
T
j
280
mW
°C
T
S
≤ 95 °C
150
–
T
A
-65 … 150
-65 … 150
T
Stg
–
2
Thermal Resistance
Table 2
Thermal resistance
Parameter
Symbol
Values
Unit
Note or Test Condition
Junction – soldering point
R
thJS
≤ 195
K/W
–
Note
:
For calculation of R
thJA
please refer to Application Note AN077 (Thermal Resistance Calculation)
1
T
S
is measured on the collector lead at the soldering point to the pcb
Datasheet
3
Revision 1.1
2017-06-01
BFS17P
NPN Silicon RF Transistor
Electrical Characteristics
3
Electrical Characteristics
Table 3
DC Characteristics at
T
A
= 25°C, unless otherwise specified
Symbol Values
Typ.
Parameter
Unit Note
or Test Condition
Min.
Max.
Collector-emitter breakdown
V
(BR)CEO
15
voltage
–
–
V
I
C
= 1 mA,
I
B
= 0
Collector-base
cutoff
current
I
CBO
–
–
–
–
–
0.05
10
µA
V
CB
= 10 V,
I
E
= 0
V
CB
= 25 V,
I
E
= 0
V
EB
= 2.5 V,
I
C
= 0
–
Emitter-base
cutoff
current
I
EBO
h
FE
–
100
150
µA
–
DC current gain
40
I
C
= 2 mA,
V
CE
= 1 V
pulse measured
20
–
70
–
I
C
= 25 mA,
V
CE
= 1 V
pulse measured
Collector-emitter saturation
voltage
V
CEsat
0.1
0.4
V
I
C
= 10 mA,
I
B
= 1 mA
Table 4
AC Characteristics at T
A
= 25°C, unless otherwise specified
Parameter
Symbol
Values
Typ.
Unit Note
or Test Condition
Min.
Max.
Transition frequency
f
T
1
1.4
–
GHz
I
C
= 2 mA,
V
CE
= 5 V,
f
= 200 MHz
1.3
–
2.5
–
I
C
= 25 mA,
V
CE
= 5 V,
f
= 200 MHz
Collector-base capacitance
C
cb
0.55
0.27
0.9
0.8
pF
pF
pF
dB
dB
V
CB
= 5 V,
f
= 1 MHz,
V
BE
= 0 , emitter grounded
Collector emitter capacitance
C
ce
–
V
CE
= 5 V,
f
= 1 MHz,
V
BE
= 0 , base grounded
Emitter-base capacitance
Minimum noise figure
Transducer gain
C
eb
–
1.45
V
EB
= 0.5 V,
f
= 1 MHz,
V
CB
= 0 , collector grounded
NF
min
–
3.5
5
–
–
I
C
= 2 mA,
V
CE
= 5 V,
Z
S
= 50Ω,
f
= 800 MHz
2
|
S
21e
|
–
13
I
C
= 20 mA,
V
CE
= 5 V,
Z
S
=
Z
L
= 50Ω,
f
= 500 MHz
Third order intercept point at
OIP
3
output
–
21.5
dBm
V
CE
= 5 V,
I
C
= 20 mA,
f
= 800 MHz,
Z
S
=
Z
Sopt
Z
L
=
Z
Lopt
,
1dB compression point
P
-1dB
–
10
–
dBm
I
C
= 20 mA,
V
CE
= 5 V,
Z
S
=
Z
L
= 50Ω, f = 800 MHz
Datasheet
4
Revision 1.1
2017-06-01
BFS17P
NPN Silicon RF Transistor
Typical characteristics diagrams
4
Typical characteristics diagrams
Figure 1
Total Power Dissipation
3
10
2
10
D = 0
D = .005
D = .01
D = .02
D = .05
D = .1
1
10
D = .2
D = .5
0
10
-6
-5
-4
-3
-2
-1
0
10
10
10
10
10
10
10
t [sec]
p
Figure 2
Permissible Pulse Load
R
thJS
=
f
(
t
p
)
Datasheet
5
Revision 1.1
2017-06-01
BFS17P
NPN Silicon RF Transistor
Typical characteristics diagrams
100
D = 0
D = .005
D = .01
D = .02
D = .05
D = .1
D = .2
D = .5
10
1
10
-6
-5
-4
-3
-2
-1
0
10
10
10
10
10
10
t [sec]
p
Figure 3
Permissible Pulse Load
P
totmax
/
P
totDC
=
f
(
t
p
)
50
I
B
=429µA
I
B
=382µA
45
40
35
30
25
20
15
10
5
P
t
ot
= 280mW
I
B
=336µA
I
B
=289µA
I
B
=243µA
I
B
=196µA
I
B
=150µA
I
B
=103µA
I
B
=57µA
I
B
=10µA
0
0
2
4
6
8
10
12
V
CE
[V]
Figure 4
Collector current I
C
= f(V
CE
), I
B
= parameter
Datasheet
6
Revision 1.1
2017-06-01
BFS17P
NPN Silicon RF Transistor
Typical characteristics diagrams
160
140
120
100
80
60
40
20
0
5
10
15
20
25
30
I
C
[mA]
Figure 5
Current gain h
FE
= f(I
C
), V
CE
= 8 V
1
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
C
CB
C
EB
0
5
10
15
20
; V
EB
V
CB
[V]
Figure 6
Collector-Base C
CB
=f(V
CB
); Emitter-Base Capacitance C
EB
=f(V
EB
)
Datasheet
7
Revision 1.1
2017-06-01
BFS17P
NPN Silicon RF Transistor
Typical characteristics diagrams
3.5
3
10V
5V
2.5
2
3V
2V
1.5
1
1V
0.5
0
0
5
10
15
20
25
30
IC [mA]
Figure 7
Transition frequency f
T
= f(I
C
), V
CE
= parameter
Datasheet
8
Revision 1.1
2017-06-01
BFS17P
NPN Silicon RF Transistor
Package information
5
Package information
5.1
SOT23 package
±0.1
1
0.1 MAX.
±0.1
3
2.9
B
1
2
1)
-0.05
+0.1
0.4
A
0.08…0.15
M
M
0.2
0.25 B
C
C
A
0.95
0…8˚
1.9
1) Lead width can be 0.6 max. in dambar area
SOT23-PO V08
Figure 8
SOT23 package outline
Soldering Type: Reflow Soldering
Soldering Type: Wave Soldering
0.8
0.8
T
r
ansport
direction
0.8
1.2
SOT23-FPR
V08
0.8
1.2
SOT23-FPW V08
Figure 9
SOT23 foot frint
Manufacturer
2005, June
Date code (YM)
EH
s
BCW66
Pin 1
T
y
pe code
Figure 10
SOT23 marking layout (example)
4
0.2
0.9
3.15
1.15
Pin 1
Figure 11
SOT23 tape and reel
Datasheet
SOT23-TP V02
9
Revision 1.1
2017-06-01
BFS17P
NPN Silicon RF Transistor
Revision History
Revision History
Major changes since previous revision
Revision History
Reference
All pages
R
thJS
Description
2017-06-01: Conversion to new document template
2017-06-01: Update of value
Datasheet
10
Revision 1.1
2017-06-01
Trademarks
All referenced product or service names and trademarks are the property of their respective owners.
Edition 2017-06-01
Published by
IMPORTANT NOTICE
WARNINGS
The information given in this document shall in no
event be regarded as a guarantee of conditions or
characteristics
(“Beschaffenheitsgarantie”)
.
With respect to any examples, hints or any typical values
stated herein and/or any information regarding the
application of the product, Infineon Technologies
hereby disclaims any and all warranties and liabilities of
any kind, including without limitation warranties of
non-infringement of intellectual property rights of any
third party.
In addition, any information given in this document is
subject to customer’s compliance with its obligations
stated in this document and any applicable legal
requirements, norms and standards concerning
customer’s products and any use of the product of
Infineon Technologies in customer’s applications.
Due to technical requirements products may contain
dangerous substances. For information on the types
in question please contact your nearest Infineon
Technologies
office.
Except as otherwise explicitly approved by Infineon
Technologies in
authorized representatives of Infineon Technologies,
Infineon Technologies’ products may not be used in
any applications where a failure of the product or
any consequences of the use thereof can reasonably
be expected to result in personal injury
Infineon Technologies AG
81726 Munich, Germany
a written document signed by
©
2017 Infineon Technologies AG
All Rights Reserved.
Do you have a question about any
aspect of this document?
Document reference
IFX-kwg1493983596879
The data contained in this document is exclusively
intended for technically trained
staff.
It is the
responsibility of customer’s technical departments to
evaluate the suitability of the product for the intended
application and the completeness of the product
information given in this document with respect to such
application.
