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Data Sheet, Rev. 2.1, April 2008
BGA416
RF Cascode Amplifier
Small Signal Discretes
Edition 2008-04-21
Published by Infineon Technologies AG,
81726 München, Germany
©
Infineon Technologies AG 2008.
All Rights Reserved.
Attention please!
The information herein is given to describe certain components and shall not be considered as a guarantee of
characteristics.
T
e
rms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding
circuits, descriptions and charts stated herein.
Information
For further information on tec
hnology, delivery term
s and conditions and prices please contact your nearest
Warnings
Due to technical requirements components may contain dangerous substances. For information on the types in
question please contact your nearest Infineon
T
e
chnologies Office.
Infineon
T
e
chnologies Components may only be used in life-support devices or systems with the express written
approval of Infineon
T
e
chnologies, if a failure of such components can reasonably be expected to cause the failure
of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support
devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may
be endangered.
BGA416
BGA416, RF Cascode Amplifier
Revision History: 2008-04-21, Rev. 2.1
Previous Version: 2005-07-26
Page
All
Subjects (major changes since last revision)
Document layout change
4-5
7-8
Electrical Characteristics slightly changed
Figures updated
Trademarks
SIEGET
®
is a registered trademark of Infineon Technologies AG.
Data Sheet
3
Rev. 2.1, 2008-04-21
BGA416
RF Cascode Amplifier
1
RF Cascode Amplifier
Feature
•
•
•
•
•
•
•
G
MA
= 23 dB at 900 MHz
Ultra high reverse isolation, 60 dB at 900 MHz
Low noise figure,
F
50
Ω
= 1.2 dB at 900 MHz
On chip bias circuitry, 5.5 mA bias current at
V
CC
= 3 V
Typical supply voltage: 2.5 to 5.0 V
3
SIEGET
®
-25 technology
Pb-free (RoHS compliant) package
2
4
1
SOT143
Applications
•
•
•
Buffer amplifier
LNAs
Oscillator active devices
GND, 1
Bias
RFout, 4
RFin, 2
GND, 3
B
G
A
416_Pin_connec
t
ion.vsd
Figure 1
Pin connection
Description
BGA416 is a monolithic silicon cascode amplifier with high reverse isolation. A bias network is integrated for
simplified biasing.
Type
Package
Marking
BGA416
SOT143
C1s
Note
:
ESD:
Electrostatic discharge sensitive device, observe handling precaution
Data Sheet
4
Rev. 2.1, 2008-04-21
BGA416
Electrical Characteristics
Maximum Ratings
Table 1
Maximum ratings
Parameter
Symbol
V
OUT
I
D
I
in
P
in
P
tot
T
J
T
A
Limit Value
6
20
0.5
8
100
150
-65… 150
-65… 150
Unit
V
Voltage at pin RFout
Device current
1)
mA
mA
dBm
mW
°C
Current into pin RFin
Input power
Total power dissipation,
T
S
< 123°C
2)
Junction temperature
Ambient temperature range
Storage temperature range
°C
°C
T
STG
1) Device
current is equal to current into pin RFout
2)
T
S
is measured on the ground lead at the soldering point
Note
:
A
ll Voltages refer to GND-Node
Thermal resistance
Table 2
Thermal resistance
Parameter
Symbol
R
thJS
Value
270
Unit
K/W
Junction – soldering point
1)
1) For
calculation of
R
thJA
please refer to Application Note Thermal Resistance
2
Electrical Characteristics
Electrical characteristics at
T
A
= 25 °C (measured in test circuit specified in
Figure 2
)
CC
= 3 V, unless otherwise specified
V
Table 3
Electrical Characteristics
Parameter
Symbol
Values
Typ.
Unit
Note /
Test Condition
Min.
Max.
Maximum available power gain
Insertion power gain
G
MA
23
14
17
11
60
40
1.2
1.6
-3
dB
dB
dB
dB
dB
dB
dB
dB
dBm
dBm
dBm
dBm
mA
f
= 0.9 GHz
f
= 1.8 GHz
f
= 0.9 GHz
f
= 1.8 GHz
f
= 0.9 GHz
f
= 1.8 GHz
f
= 0.9 GHz
f
= 1.8 GHz
f
= 0.9 GHz
f
= 1.8 GHz
f
= 0.9 GHz
f
= 1.8 GHz
|S
21
|
2
|S
12
|
Reverse isolation
Noise figure (
Z
S
= 50
Ω)
F
50
Ω
P
-1dB
OIP
3
I
D
Output power at 1 dB gain
compression (
Z
S
=
Z
L
= 50
Ω
)
Output third order intercept point
(
Z
S
=
Z
L
= 50
Ω
)
-3
14
14
5.5
Device current
Data Sheet
5
Rev. 2.1, 2008-04-21
BGA416
Electrical Characteristics
In
Bias
–
T
GND
RFin
V
C
C
N.C.
I
D
Bias
–
T
RFout GND
Top View
Out
B
G
A
416_S_Parame
t
e
r_Circuit.vsd
Figure 2
Test Circuit for Electrical Characteristics
Data Sheet
6
Rev. 2.1, 2008-04-21
BGA416
Measured Parameters
3
Measured Parameters
Power Gain
|S
21
|
2
, G
ma
= f(f)
CC
= 3V,
I
D
= 5.5mA
Matching
|S
11
|, |S
22
| = f(f)
V
CC
= 3V,
I
D
= 5.5mA
V
40
35
30
25
20
15
10
5
0
S
22
−1
−2
−3
G
ma
−4
S
11
−5
−6
2
|S
21
|
−7
−8
−9
0
−10
0
1
2
3
4
0
1
2
3
4
Frequency [GHz]
Frequency [GHz]
Reverse Isolation
|S
12
| = f(f)
CC
= 3V,
I
D
= 5.5mA
Noise figure
F = f(f)
V
CC
= 3V,
I
D
= 5.5mA
V
0
−10
−20
−30
−40
−50
−60
−70
−80
3
2.5
2
1.5
1
0.5
0
0
1
2
3
4
0
0.5
1
1.5
2
2.5
3
Frequency [GHz]
Frequency [GHz]
Data Sheet
7
Rev. 2.1, 2008-04-21
BGA416
Package Information
Device Current
I
D
= f(V
CC
)
12
11
10
9
8
7
6
5
4
3
2
1
0
0
1
2
3
4
5
V
CC
[V]
4
Package Information
±0.1
1
±0.1
2.9
B
1.9
0.1 MAX.
4
3
1
2
A
0.2
+0.1
-0.05
0.08…0.15
0.8
+0.1
-0.05
0.4
M
M
0.2
0.25
B
A
(1.7)
GPS05559
Figure 3
Package Outline SOT143
0.2
4
3.15
1.15
Pin 1
CSOG5812
Figure 4
Tape for SOT143
Data Sheet
8
Rev. 2.1, 2008-04-21
