Infineon-Technologies-BGA427H6327XTSA1

BGA427  



in SIEGET

 

25-Technologie  

Si-MMIC-Amplifier  

•

Cascadable 50

Ω

-gain block  

•

Unconditionally stable  

3

2

1

4

2

•

Gain |

S

| =

 

18.5 dB at 1.8 GHz (Appl.1)  

21  

2

gain |

S

| =

 

22 dB at 1.8 GHz (Appl.2)  

21  

I

P  

= +7 dBm at 1.8 GHz (

V

=3V,

I

=9.4mA)  

3out  

D D  

•

Noise figure

NF

= 2.2 dB at 1.8 GHz  

3

+

V

 

•

Typical device voltage

V

= 2 V to 5 V  

D

•

Reverse isolation

>

35 dB (Appl.2)  

•

Pb-free (RoHS compliant) package  

4

OUT  

Circuit Diagram  

1

IN  

2

EHA07378  

GND  

ESD

(

E

lectro

s

tatic

d

ischarge) sensitive device, observe handling precaution!  

Type  

BGA427  

Marking  

BMs  

Pin Configuration  

2, GND

 

3, +V  

Package  

SOT343  

1, IN  

4, Out  

Maximum Ratings  

Parameter  

Symbol  

Value  

Unit  

25  

mA  

Device current  

I

D

Device voltage  

V

,+V  

6

V

D

150  

mW  

Total power dissipation  

P

tot  

T

= 120 °C  

S

dBm  

°C  

RF input power  

Junction temperature  

P

T

j

-10  

150  

RFin  

Ambient temperature range  

Storage temperature range  

T

T

-65 … 150  

-65 … 150  

A

stg  

Thermal Resistance  

Junction – soldering point  

1)  

K/W  

R

≤

295  

thJS  

1

For calculation of

R  

please refer to Application Note Thermal Resistance  

thJA  

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BGA427  

Electrical Characteristics

at

T

= 25 °C, unless otherwise specified.  

A

Parameter  

Symbol  

Values  

Unit  

min.  

typ. max.  

AC characteristics

V

= 3 V,

Z

= 50

Ω

, Testfixture Appl.1  

D

o

2

dB  

Insertion power gain  

f

= 0.1 GHz  

|

S

|  

21  

–

–

–

–

27  

22  

18.5  

22  

–

–

–

–

f

= 1 GHz  

f

= 1.8 GHz  

Reverse isolation  

f

= 1.8 GHz  

Noise figure  

f

= 0.1 GHz  

f

= 1 GHz  

S12  

NF  

–

–

–

–

1.9  

2

2.2  

–

–

–

–

f

= 1.8 GHz  

dBm  

dB  

Intercept point at the output  

f

= 1.8 GHz  

IP  

+ 7  

3out  

–

–

>12  

–

–

Return loss input  

f

= 1.8 GHz  

Return loss output  

f

= 1.8 GHz  

RL  

RL  

in  

>9  

out  

Typical configuration  

Appl.1  

Appl.2  

+

V

 

+

V

 

100 pF  

RF OUT  

1 nF  

10 nF  

100 pF  

100 nH  

100 pF  

2.2 pF  

BGA 427  

RF OUT  

100 pF  

GND  

RF IN  

EHA07379  

BGA 427  

GND  

100 pF  

RF IN  

EHA07380  

Note: 1) Large-value capacitors should be connected from pin 3 to ground right at the device  

to provide a low impedance path (appl.1).  

2) The use of plated through holes right at pin 2 is essential for pc-board-applications. Thin  

boards are recommended to minimize the parasitic inductance to ground.  

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BGA427  

S-Parameters at

T

= 25 °C,

(Testfixture, Appl.1)  

A

f

S

S

S

S

11  

21  

12  

22  

GHz MAG  

ANG  

MAG  

ANG  

MAG  

ANG  

MAG  

ANG  

V

= 3V,

Z

= 50

Ω  

D

0.1  

0.2  

0.5  

0.8  

0.9  

1

o

0.1382  

0.1179  

0.1697  

0.1824  

0.1782  

0.176  

-38.3  

-16  

24.821  

24.606  

22.236  

18.258  

17.152  

15.786  

10.923  

9.029  

164.9  

158.9  

135.2  

115.4  

109.4  

104  

0.0022  

0.0046  

0.0104  

0.0169  

0.0194  

0.0225  

0.0385  

0.0479  

0.0517  

0.0549  

0.0709  

0.0892  

50.7  

71.8  

83.8  

94.8  

97.3  

98.3  

99.7  

99.3  

98.9  

98.8  

97.1  

96.9  

0.6435  

0.6278  

0.54  

174.8  

166.9  

147.3  

140.2  

139.4  

138.1  

139.6  

139.3  

138.8  

138.3  

134.6  

131  

-20.8  

-56.9  

-69.1  

-80.6  

-133.5  

-156.1  

-162.8  

-167.7  

172.8  

153.3  

0.4453  

0.4326  

0.4129  

0.3852  

0.3917  

0.3946  

0.3991  

0.4202  

0.4477  

1.5  

1.8  

1.9  

2

0.1827  

0.1969  

0.2021  

0.2116  

0.2437  

0.258  

84.9  

77  

8.486  

74.7  

72.3  

63  

8.015  

2.5  

3

6.259  

5.103  

55  

Spice-model BGA 427  

+

V  

T1  

T2  

T501  

T501  

BGA 427-chip  

including parasitics  

13  

R

R

R

R

C

C

C

C

C

C

14.5k

Ω  

280

Ω  

2.4k

Ω  

170

Ω  

2.3pF  

0.2pF  

0.2pF  

0.6pF  

0.1pF  

0.1pF  

1

2

3

4

R

2  

T2  

R

1  

R

3  

C’-E’-  

Diode  

1

14  

OUT  

P1  

P2  

P3  

P4  

P5  

C

1  

11  

C

P3  

C

P4  

C

P5  

R

4  

IN  

T1  

C

P1  

C

P2  

12  

GND  

EHA07381  

C’-E’-diode T1  

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BGA427  

Transistor Chip Data T1 (Berkley-SPICE 2G.6 Syntax) :  

83.23  

0.16493  

10.526  

0.25052  

15  

1.9289  

0.70367  

0.3641  

0

1.0405  

15.761  

0.96647  

IS =  

VAF =  

NE =  

0.21024  

39.251  

fA  

V

BF =  

–

A

NF =  

–

fA  

IKF =  

BR =  

IKR =  

RB =  

ISE =  

NR =  

ISC =  

IRB =  

RC =  

MJE =  

VTF =  

CJC =  

XCJC =  

VJS =  

EG =  

TNOM  

1.7763  

34.368  

1.3152  

1.3491  

3.7265  

4.5899  

1.3364  

0.99532  

1.4935  

0

–

V

–

A

–

0.037223 fA  

VAR =  

NC =  

RBM =  

CJE =  

TF =  

ITF =  

VJC =  

TR =  

0.21215  

0.12691  

0.37747  

0.19762  

96.941  

0.08161  

0.75  

A

–

Ω

Ω

RE =  

Ω

fF  

ps  

mA  

V

V

–

deg  

VJE =  

XTF =  

PTF =  

MJC =  

CJS =  

XTB =  

FC =  

–

V

fF  

0.48652  

0

0

–

fF  

–

ns  

V

eV  

K

1.11  

300  

MJS =  

XTI =  

–

–

–

–

3

0.99469  

C’-E’-Diode Data (Berkley-SPICE 2G.6 Syntax) :  

fA  

2

RS =  

20  

Ω

IS =  

N =  

1.02  

–

All parameters are ready to use, no scaling is necessary  

Package Equivalent Circuit:  

0.36  

0.4  

nH  

nH  

nH  

nH  

nH  

L

=  

L

2  

BI  

OUT  

L

=

BO  

0.3  

C

1  

C

3  

L

=  

EI  

L

1  

C

CB  

0.15  

0.36  

L

=

EO  

CI  

CO  

BE  

CB  

CE  

1

2

C

2  

14  

L

=  

0.4  

nH  

L

=

L

BO  

L

BI  

L

CI  

L

CO  

11  

BGA 427  

Chip  

13  

95  

fF  

+

V  

IN  

C

C

C

=

=

=

6

fF  

C’-E’-  

Diode  

132  

28  

88  

8

fF  

12  

C

BE  

C

CE  

C

=  

fF  

C

=  

fF  

L

EI  

C

=  

fF  

3

1

2

L

=  

0.6  

0.4  

nH  

nH  

L

=  

L

EO  

GND  

EHA07382  

Valid up to 3GHz  

Extracted on behalf of Infineon Technologies AG by:  

Institut für Mobil-und Satellitentechnik (IMST)  

For examples and ready to use parameters please contact your local Infineon Technologies distributor  

or sales office to obtain a Infineon Technologies CD-ROM or see Internet:  

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BGA427  

2

Insertion power gain

|

S

| =

 

f

(

f

)  

Noise figure

NF

=

f

(

f

)  

21  

V

,

I

= parameter  

V

,

I

= parameter  

D

D

D D  

5

35  

dB  

dB  

4

3.5  

3

VD=5V, ID=17.5mA  

VD=3V, ID=9.5mA  

25  

20  

15  

10  

5

2.5  

2

1.5  

1

0.5  

0

10

-1  

0

10

-1  

10

0  

10

1  

10

0  

10

1  

GHz  

GHz  

f

RTF-1  

Intercept point at the output  

IP

=

f

(

f

)  

3out  

V

,

I

= parameter  

D D  

25  

dBm  

15  

10  

5

0

10

-1  

10

0  

10

1  

GHz  

f

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Package SOT343  

BGA427  

Package Outline  

0.1  

0.9  

0.2  

2

0.1 MAX.  

0.1  

1.3  

A

4

1

3

2

0.15  

+0.1  

+0.1  

-0.05  

0.3  

0.15  

-0.05  

+0.1  

0.6  

4x  

-0.05  

M

0.2  

A

M

0.1  

Foot Print  

0.6  

1.15  

0.9  

Marking Layout (Example)  

Manufacturer  

2005, June  

Date code (YM)  

BGA420  

T

y

pe code  

Pin 1  

Standard Packing  

Reel ø180 mm = 3.000 Pieces/Reel  

Reel ø330 mm = 10.000 Pieces/Reel  

0.2  

4

2.15  

Pin 1  

1.1  

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BGA427  

Edition 2009-11-16  

Published by  

Infineon Technologies AG  

81726 Munich, Germany  



2009 Infineon Technologies AG  

All Rights Reserved.  

Legal Disclaimer  

The information given in this document shall in no event be regarded as a guarantee  

of conditions or characteristics. With respect to any examples or hints given herein,  

any typical values stated herein and/or any information regarding the application of  

the device, Infineon Technologies hereby disclaims any and all warranties and  

liabilities of any kind, including without limitation, warranties of non-infringement of  

intellectual property rights of any third party.  

Information  

For further information on technology, delivery terms and conditions and prices,  

please contact the nearest Infineon Technologies Office (

<www.infineon.com>

).  

Warnings  

Due to technical requirements, components may contain dangerous substances.  

For information on the types in question, please contact the nearest Infineon  

Technologies Office.  

Infineon Technologies components may be used in life-support devices or systems  

only with the express written approval of Infineon Technologies, if a failure of such  

components can reasonably be expected to cause the failure of that life-support  

device or system or to affect the safety or effectiveness of that device or system.  

Life support devices or systems are intended to be implanted in the human body or  

to support and/or maintain and sustain and/or protect human life. If they fail, it is  

reasonable to assume that the health of the user or other persons may be  

endangered.  

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