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Data Sheet, Rev. 2.1, Sept. 2011
BGA616
Silicon Germanium Broadband MMIC Amplifier
RF & Protection Devices
Edition 2011-09-02
Published by Infineon Technologies AG,
81726 München, Germany
©
Infineon Technologies AG 2011.
All Rights Reserved.
Attention please!
The information herein is given to describe certain components and shall not be considered as a guarantee of
characteristics.
T
e
rms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding
circuits, descriptions and charts stated herein.
Information
For further informatio
n on technology, delivery term
s and conditions and prices please contact your nearest
Warnings
Due to technical requirements components may contain dangerous substances. For information on the types in
question please contact your nearest Infineon
T
e
chnologies Office.
Infineon
T
e
chnologies Components may only be used in life-support devices or systems with the express written
approval of Infineon
T
e
chnologies, if a failure of such components can reasonably be expected to cause the failure
of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support
devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may
be endangered.
BGA616
BGA616, Silicon Germanium Broadband MMIC Amplifier
Revision History: 2011-09-02, Rev. 2.1
Previous Version: 2003-04-16
Page
All
Subjects (major changes since last revision)
New Chip Version with integrated ESD protection
Electrical Characteristics slightly changed
Figures updated
5
7-8
All
Document layout change
Trademarks
SIEGET
®
is a registered trademark of Infineon Technologies AG.
Data Sheet
3
Rev. 2.1, 2011-09-02
BGA616
Silicon Germanium Broadband MMIC Amplifier
1
Silicon Germanium Broadband MMIC Amplifier
Feature
•
•
Cascadable 50
Ω
-gain block
3 dB-bandwidth: DC to 2.7 GHz with
19.0 dB typical gain at 1.0 GHz
•
•
•
•
•
•
Compression point
P
-1dB
= 18 dBm at 2.0 GHz
Noise figure
F
50
Ω
= 2.60 dB at 2.0 GHz
Absolute stable
70 GHz
f
T
– Silicon Germanium technology
1 kV HBM ESD protection (Pin-to-Pin)
Pb-free (RoHS compliant) package
3
2
4
1
SOT343
Applications
•
•
•
Driver amplifier for GSM/PCS/SCDMA/UMTS
Broadband amplifier for SAT-TV & LNBs
Broadband amplifier for CATV
Out, 3
IN, 1
GND, 2,4
Figure 1
Pin connection
Description
The BGA616 is a broadband matched general purpose MMIC amplifier in a Darlington configuration. It is optimized
for a typical supply current of 60 mA.
The BGA616 is based on Infineon Technologies’ B7HF Silicon Germanium technology.
Type
Package
Marking
BGA616
SOT343
BPs
Note
:
ESD:
Electrostatic discharge sensitive device, observe handling precaution
Data Sheet
4
Rev. 2.1, 2011-09-02
BGA616
Electrical Characteristics
Maximum Ratings
Table 1
Maximum ratings
Parameter
Symbol
V
D
Limit Value
4.5
Unit
V
Device voltage
Device current
I
D
80
mA
mA
dBm
mW
°C
Current into pin In
Input power
1)
Total power dissipation,
T
S
< 78 °C
2)
Junction temperature
Ambient temperature range
Storage temperature range
I
in
0.7
P
in
10
P
tot
T
J
360
150
T
A
-65… 150
-65… 150
1000
°C
T
STG
°C
ESD capability all pins (HBM: JESD22-A114)
V
ESD
1) Valid
for
Z
S
=
Z
L
= 50
Ω,
V
CC
= 6 V,
R
Bias
= 33
Ω
V
2)
T
S
is measured on the ground lead at the soldering point
Note
:
A
ll Voltages refer to GND-Node
Thermal resistance
Table 2
Thermal resistance
Parameter
Symbol
Value
Unit
Junction – soldering point
1)
R
thJS
200
K/W
1) For
calculation of
R
thJA
please refer to Application Note Thermal Resistance
2
Electrical Characteristics
Electrical characteristics at
T
A
= 25 °C (measured in test circuit specified in
Figure 2
)
CC
= 6 V,
R
Bias
= 33
Ω
, Frequency = 2 GHz, unless otherwise specified
V
Table 3
Electrical Characteristics
Parameter
Symbol
Values
Typ.
Unit
Note /
Test Condition
Min.
Max.
Insertion power gain
|S
21
|
2
20.0
19.0
18.0
2.2
dB
dB
dB
dB
dB
dB
dBm
f
= 0.1 GHz
f
= 1 GHz
f
= 2 GHz
f
= 0.1 GHz
f
= 1 GHz
f
= 2 GHz
Noise figure (
Z
S
= 50
Ω)
F
50
Ω
2.5
2.6
Output power at 1 dB gain
compression
P
-1dB
18
Output third order intercept point
Input return loss
OIP
3
RL
in
RL
out
I
D
29
15
15
60
dBm
dB
Output return loss
dB
Total device current
mA
Data Sheet
5
Rev. 2.1, 2011-09-02
BGA616
Electrical Characteristics
V
CC
= 6V
In
R
Bias
= 33
Ω
Bias-T
In
GND
Out
I
D
Bias-T
V
D
GND
Out
Top View
Caution:
Device Voltage V
D
at Pin Out!
V
D
= V
CC
– R
Bias
I
D
BGA616_Test_Circuit.vsd
Figure 2
Test Circuit for Electrical Characteristics and S-Parameter
Data Sheet
6
Rev. 2.1, 2011-09-02
BGA616
Measured Parameters
3
Measured Parameters
Power Gain
|S
21
|
2
, G
ma
= f(f)
CC
= 6V, R
Bias
= 33
Ω
, I
C
= 60mA
Matching
|S
11
|, |S
22
| = f(f)
V
CC
= 6V, R
Bias
= 33
Ω
, I
C
= 60mA
V
22
20
18
16
14
12
10
8
0
G
ma
2
|S
21
|
−5
−10
S
11
−15
−20
S
22
6
4
−25
2
0
−30
10
−1
10
0
10
1
10
−1
10
0
10
1
Frequency [GHz]
Frequency [GHz]
Power Gain
|S
21
| = f(I
D
)
Output Compression Point
f = parameter in GHz
P
−1dB
= f(I
D
), f = 2GHz
22
20
18
16
14
12
10
8
20
18
16
14
12
10
8
1
2
3
4
6
8
6
6
4
4
2
2
0
0
0
20
40
60
80
0
20
40
60
80
I
D
[mA]
I
D
[mA]
Data Sheet
7
Rev. 2.1, 2011-09-02
BGA616
Measured Parameters
Device Current
I
D
= f(V
CC
)
Device Current
I
D
= f(T
A
)
V
CC
= 6V, R
Bias
= parameter in
Ω
R
Bias
= parameter in
Ω
80
70
60
50
40
30
20
10
0
80
75
70
65
60
55
50
45
40
0
16
33
47
68
30
33
36
100
150
0
2
4
6
8
−40
−20
0
20
40
60
80
V
CC
[V]
T
A
[°C]
Noise figure
F = f(f)
CC
= 6V, R
Bias
= 33
Ω
, Z
S
= 50
Ω
V
T
A
= parameter in °C
4
3.5
3
+80°C
2.5
+25°C
2
−20°C
1.5
1
0.5
0
0
0.5
1
1.5
2
2.5
3
Frequency [GHz]
Data Sheet
8
Rev. 2.1, 2011-09-02
BGA616
Package Information
4
Package Information
±0.1
0.9
±0.2
2
0.1 MAX.
0.1
1.3
A
4
3
2
0.15
1
+0.1
+0.1
-0.05
0.3
0.15
-0.05
+0.1
0.6
4x
-0.05
M
0.2
A
M
0.1
GPS05605
Figure 3
Package Outline SOT343
0.2
4
2.15
Pin 1
1.1
Figure 4
Tape for SOT343
Data Sheet
9
Rev. 2.1, 2011-09-02
