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Data Sheet, V3.0, July 2009
BGA777L7
Single-Band UMTS LNA
(2300 – 2700 MHz)
RF & Protection Devices
Edition 2009-07-02
Published by
Infineon Technologies AG
81726 München, Germany
©
Infineon Technologies AG 2009.
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or
characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values
stated herein and/or any information regarding the application of the device, Infineon
T
e
chnologies hereby
disclaims any and all warranties and liabilities of any kind, including without limitation warranties of
non-infringement of intellectual property rights of any third party.
Information
For further informatio
n on technology, delivery term
s and conditions and prices please contact your nearest
Warnings
Due to technical requirements components may contain dangerous substances. For information on the types in
question please contact your nearest Infineon
T
e
chnologies Office.
Infineon
T
e
chnologies Components may only be used in life-support devices or systems with the express written
approval of Infineon
T
e
chnologies, if a failure of such components can reasonably be expected to cause the failure
of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support
devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may
be endangered.
BGA777L7 – Low Power Single-Band UMTS LNA
BGA777L7
Revision History:
2009-07-02
, V3.0
Previous Version: 2009-02-18, V1.0 preliminary
Page
7
Subjects (major changes since last revision)
Updated DC characteristics (added limits)
8
9
Added supply current and power gain characteristics
Updated RF characteristics for application board BGA7xxL7 and added limits
Added RF characteristics for UMTS bands 38 and 40
Updated footnotes
Updated measured performance for application board BGA7xxL7
Updated application circuit schematic for application board BGA7xxL7
Added application circuit schematic for UMTS bands 38 and 40
Updated application board
10, 11
9-11
12-16
17
18, 19
20, 21
Data Sheet
3
V3.0, 2009-07-02
BGA777L7 – Low Power Single-Band UMTS LNA
Table of Contents
Table of Contents
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
4
Description
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
5
1
2
Electrical Characteristics
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
6
Absolute Maximum Ratings
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
6
Thermal Resistance
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
6
ESD Integrity . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
6
DC Characteristics
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
7
Gain Mode Select Truth Table
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
7
Switching Times
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
7
Supply Current and Power Gain Characteristics;
T
A
= 25 °C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
8
Logic Signal Characteristics;
T
A
= 25 °C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
8
Measured RF Characteristics UMTS Band 7
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
9
Measured RF Characteristics UMTS Band 38
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
10
Measured RF Characteristics UMTS Band 40
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
11
Measured Performance Band 7 Application High Gain Mode vs. Frequency . . . . . . . . . . . . . . . . . . .
12
Measured Performance Band 7 Application High Gain Mode vs. Temperature . . . . . . . . . . . . . . . . .
13
Measured Performance Band 7 Application Low Gain Mode vs. Frequency
. . . . . . . . . . . . . . . . . . .
14
Measured Performance Band 7 Application Low Gain Mode vs. Temperature
. . . . . . . . . . . . . . . . .
16
2.1
2.2
2.3
2.4
2.5
2.6
2.7
2.8
2.9
2.10
2.11
2.12
2.13
2.14
2.15
3
Application Circuit and Block Diagram
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
17
UMTS Band 7 Application Circuit Schematic
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
17
UMTS Band 38 Application Circuit Schematic
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
18
UMTS Band 40 Application Circuit Schematic
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
19
Pin Definition . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
19
Application Board
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
20
3.1
3.2
3.3
3.4
3.5
4
4.1
Physical Characteristics
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
22
Package Dimensions
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
22
Data Sheet
4
V3.0, 2009-07-02
BGA777L7 – Low Power Single-Band UMTS LNA
Description
1
Description
The BGA777L7 is a low current single-band low noise amplifier MMIC for UMTS bands 7, 38 and 40. The LNA is
based upon Infineon’s proprietary and cost-effective SiGe:C technology and comes in a low profile TSLP-7-1
leadless green package. This document specifies electrical parameters, pinout, application circuit and packaging
of the chip. The device features dynamic gain control, temperature stabilization, standby mode and 2 kV ESD
protection on-chip as well as matching off chip.
Features
•
•
•
•
•
•
•
•
•
Gain: 16 / -7 dB in high / low gain mode
Noise figure: 1.2 dB in high gain mode
Supply current: 4.2 / 0.5 mA in high / low gain mode
Standby mode (< 2
µ
A typ.)
Inputs pre-matched to 50
Ω
2 kV HBM ESD protection
Low external component count
Small leadless TSLP-7-1 package (2.0 x 1.3 x 0.39 mm)
Pb-free (RoHS compliant) package
TSLP-7-1 package
ꢇ
ꢄ
5),1
5)287
%LDVLQJꢈꢉꢈ/RJLFꢈ
ꢆ
ꢃ
9(1
&LUFXLWU
55()
ꢅ
ꢂ
9*6
9&&
ꢀ
*1′
%*$ꢀꢀꢀ/ꢀB&KLSB%O’ꢁYVG
Figure 1
Block diagram of single-band LNA
Type
Package
Marking
Chip
BGA777L7
TSLP-7-1
B7
T1531
Data Sheet
5
V3.0, 2009-07-02
BGA777L7 – Low Power Single-Band UMTS LNA
Electrical Characteristics
Absolute Maximum Ratings
2
Electrical Characteristics
2.1
Absolute Maximum Ratings
Table 1
Absolute Maximum Ratings
Parameter
Symbol
Values
Min.
-0.3
Unit
Note / Test Condition
Max.
3.6
10
Supply voltage
Supply current
Pin voltage
Pin voltage RF Input Pin
RF input power
Junction temperature
Ambient temperature range
T
A
Storage temperature range
T
stg
V
CC
I
CC
V
PIN
V
RFIN
P
RFIN
T
j
V
mA
V
-0.3
-0.3
V
CC
+ 0.3
All pins except RF input pin
0.9
4
150
85
150
V
dBm
°C
°C
°C
-30
-65
2.2
Thermal Resistance
Table 2
Parameter
Thermal Resistance
Symbol
Value
Unit
Note / Test Conditions
Thermal resistance junction
R
thJS
240
K/W
to soldering point
2.3
ESD Integrity
Table 3
ESD Integrity
Parameter
Symbol
V
ESD-HBM
2000
Value (typ.)
Unit
V
Note / Test Conditions
All pins
ESD hardness HBM
1)
1) According
to JESD22-A114
Data Sheet
6
V3.0, 2009-07-02
BGA777L7 – Low Power Single-Band UMTS LNA
Electrical Characteristics
DC Characteristics
2.4
DC Characteristics
Table 4
DC Characteristics,
T
A
= 25 °C
Parameter
Symbol
Values
Typ.
Unit
Note / Test Condition
Min.
Max.
Supply voltage
V
CC
2.6
2.8
3.0
V
Supply current high gain
mode
I
CCHG
4.2
mA
Supply current low gain
mode
Supply current standby
mode
I
CCLG
530
0.1
µ
A
µ
A
I
CCOFF
2.0
Logic level high
Logic level low
Logic currents VEN
V
HI
1.5
-0.2
2.8
0.0
V
V
µ
A
µ
A
µ
A
µ
A
VEN and VGS
VEN
V
LO
I
ENL
I
ENH
I
GSL
I
GSH
0.5
0.1
6.0
0.1
6.0
5.0
5.0
Logic currents VGS
VGS
2.5
Gain Mode Select Truth Table
Table 5
Truth Table
Control Voltage
State
Bands 7, 38, 40
VEN
H
VGS
L
HG
OFF
LG
ON
H
L
H
L
ON
OFF
STANDBY
1)
L
H
1) In
order to achieve minimum standby current it is encouraged to apply logic low-level at the VGS pin in standby mode
although this is not mandatory. Details see section 2.4.
2.6
Switching Times
Table 6
Typical switching times;
T
A
= -30 … 85 °C
Parameter
Symbol
Values
Typ.
Unit
Note / Test Condition
Switching LG
↔
HG
V3.0, 2009-07-02
Min.
Max.
Settling time gainstep
Data Sheet
t
GS
1
µ
s
7
BGA777L7 – Low Power Single-Band UMTS LNA
Electrical Characteristics
Supply Current and Power Gain Characteristics;
T
A
= 25 °C
2.7
Supply Current and Power Gain Characteristics;
T
A
= 25 °C
Supply current and power gain high gain mode versus reference resistor
R
REF
(see Figure 2 on page 17 for
reference resistor; low gain mode supply current is independent of reference resistor).
Supply Current
I
CC
= f (
R
REF
)
Power Gain
|S
21
| = f (
R
REF
)
V
CC
= 2.8 V
V
CC
= 2.8 V
7
17
6.5
6
16.5
16
5.5
5
4.5
4
15.5
15
3.5
3
14.5
14
2.5
2
1
10
100
10
100
1000
R
REF
[k
Ω
]
R
REF
[k
Ω
]
2.8
Logic Signal Characteristics;
T
A
= 25 °C
Current consumption of logic inputs VEN, VGS
Logic currents
I
EN
= f (
V
EN
)
Logic currents
I
GS
= f (
V
GS
)
V
CC
=2.8 V
V
CC
= 2.8 V
6
6
4
2
0
4
2
0
0
0.5
1
1.5
2
2.5
3
0
0.5
1
1.5
2
2.5
3
V
EN
[V]
V
GS
[V]
Data Sheet
8
V3.0, 2009-07-02
BGA777L7 – Low Power Single-Band UMTS LNA
Electrical Characteristics
Measured RF Characteristics UMTS Band 7
2.9
Measured RF Characteristics UMTS Band 7
Table 7
Typical Characteristics 2650 MHz Band
T
A
= 25 °C,
V
CC
= 2.8 V
1)
Parameter
Symbol
Values
Unit
Note / Test Condition
Min.
2620
Typ.
Max.
2690
4.9
0.8
17.0
-4.1
Pass band range band I
Current consumption
MHz
mA
mA
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
I
CCHG
I
CCLG
S
21HG
S
21LG
S
12HG
S
12LG
NF
HG
NF
LG
S
11HG
S
11LG
S
22HG
S
22LG
k
4.2
0.5
15.7
-7.1
-34
-7
High gain mode
Low gain mode
High gain mode
Low gain mode
High gain mode
Low gain mode
High gain mode
Low gain mode
50
Ω,
high gain mode
50
Ω,
low gain mode
50
Ω
, high gain mode
50
Ω
, low gain mode
DC to 10 GHz; all gain
modes
High gain mode
Low gain mode
High gain mode
Low gain mode
Gain
14.4
-9.6
Reverse Isolation
2)
Noise figure
1.2
6.8
-20
-10
-20
-11
>2.3
1.7
Input return loss
2)
Output return loss
2)
Stability factor
3)
Input compression point
2)
IP
1dBHG
IP
1dBLG
-10
-2
-2
7
dBm
dBm
dBm
Inband IIP3
2)
IIP3
HG
f
1
–
f
2
= 1 MHz
IIP3
LG
P
f1
=
P
f2
= -37 dBm
1) Performance
based on application circuit in Figure 2 on page 17
2) Verified
based on AQL; not 100% tested in production
3) Guaranteed
by device design; not tested in production
Data Sheet
9
V3.0, 2009-07-02
BGA777L7 – Low Power Single-Band UMTS LNA
Electrical Characteristics
Measured RF Characteristics UMTS Band 38
2.10
Measured RF Characteristics UMTS Band 38
Table 8
Typical Characteristics 2600 MHz Band
T
A
= 25 °C,
V
CC
= 2.8 V
1)
Parameter
Symbol
Values
Unit
Note / Test Condition
Min.
Typ.
Max.
Pass band range band I
Current consumption
2570
2620
MHz
mA
mA
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
I
CCHG
I
CCLG
S
21HG
S
21LG
S
12HG
S
12LG
NF
HG
NF
LG
S
11HG
S
11LG
S
22HG
S
22LG
k
4.2
0.5
15.5
-6.9
-34
-7
1.2
6.8
-15
-11
-15
-13
>2.3
High gain mode
Low gain mode
High gain mode
Low gain mode
High gain mode
Low gain mode
High gain mode
Low gain mode
50
Ω,
high gain mode
50
Ω,
low gain mode
50
Ω
, high gain mode
50
Ω
, low gain mode
DC to 10 GHz; all gain
modes
High gain mode
Low gain mode
High gain mode
Low gain mode
Gain
Reverse Isolation
2)
Noise figure
Input return loss
2)
Output return loss
2)
Stability factor
3)
Input compression point
2)
IP
1dBHG
IP
1dBLG
-10
-2
-2
7
dBm
dBm
dBm
Inband IIP3
2)
IIP3
HG
f
1
–
f
2
= 1 MHz
IIP3
LG
P
f1
=
P
f2
= -37 dBm
1) Performance
based on application circuit in Figure 3 on page 18
2) Verified
based on AQL; not 100% tested in production
3) Guaranteed
by device design; not tested in production
Data Sheet
10
V3.0, 2009-07-02
BGA777L7 – Low Power Single-Band UMTS LNA
Electrical Characteristics
Measured RF Characteristics UMTS Band 40
2.11
Measured RF Characteristics UMTS Band 40
Table 9
Typical Characteristics 2300 MHz Band
T
A
= 25 °C,
V
CC
= 2.8 V
1)
Parameter
Symbol
Values
Unit
Note / Test Condition
Min.
Typ.
Max.
Pass band range band I
Current consumption
2300
2400
MHz
mA
mA
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
I
CCHG
I
CCLG
S
21HG
S
21LG
S
12HG
S
12LG
NF
HG
NF
LG
S
11HG
S
11LG
S
22HG
S
22LG
k
4.2
0.5
16.8
-7.2
-35
-7
1.2
7.0
-23
-12
-15
-12
>2.3
High gain mode
Low gain mode
High gain mode
Low gain mode
High gain mode
Low gain mode
High gain mode
Low gain mode
50
Ω,
high gain mode
50
Ω,
low gain mode
50
Ω
, high gain mode
50
Ω
, low gain mode
DC to 10 GHz; all gain
modes
High gain mode
Low gain mode
High gain mode
Low gain mode
Gain
Reverse Isolation
2)
Noise figure
Input return loss
2)
Output return loss
2)
Stability factor
3)
Input compression point
2)
IP
1dBHG
IP
1dBLG
-11
-2
-2
8
dBm
dBm
dBm
Inband IIP3
2)
IIP3
HG
f
1
–
f
2
= 1 MHz
IIP3
LG
P
f1
=
P
f2
= -37 dBm
1) Performance
based on application circuit in Figure 4 on page 19
2) Verified
based on AQL; not 100% tested in production
3) Guaranteed
by device design; not tested in production
Data Sheet
11
V3.0, 2009-07-02
BGA777L7 – Low Power Single-Band UMTS LNA
Electrical Characteristics
Measured Performance Band 7 Application High Gain Mode vs. Frequency
2.12
Measured Performance Band 7 Application High Gain Mode vs. Frequency
T
A
= 25 °C,
V
CC
= 2.8 V,
V
GS
= 2.8 V,
V
EN
= 2.8 V
Power Gain
|S
21
| = f (
f
)
Power Gain Wideband
|S
21
| = f (
f
)
17
20
10
−30°C
16
0
25°C
−10
−20
−30
−40
−50
−60
15
85°C
14
13
2.62 2.63 2.64 2.65 2.66 2.67 2.68 2.69
0
2
4
6
8
Frequency [GHz]
Frequency [GHz]
Matching
|
S
11
| = f (
f
), |
S
22
| = f (
f
)
Gainstep
HG-LG
|
∆
S
21
| = f (
f
)
0
−5
24
23.5
23
−10
−15
25°C
S
22
−30°C
85°C
−20
22.5
S
11
−25
−30
22
2.62 2.63 2.64 2.65 2.66 2.67 2.68 2.69
2.62 2.63 2.64 2.65 2.66 2.67 2.68 2.69
Frequency [GHz]
Frequency [GHz]
Data Sheet
12
V3.0, 2009-07-02
BGA777L7 – Low Power Single-Band UMTS LNA
Electrical Characteristics
Measured Performance Band 7 Application High Gain Mode vs. Temperature
Noise Figure
NF
= f (
f
)
Input Compression
P1dB
= f (
f
)
1.6
1.5
1.4
1.3
1.2
1.1
1
−6
−7
−8
−9
−10
−11
−12
−13
−14
0.9
0.8
2.62 2.63 2.64 2.65 2.66 2.67 2.68 2.69
2.62 2.63 2.64 2.65 2.66 2.67 2.68 2.69
Frequency [GHz]
Frequency [GHz]
2.13
Measured Performance Band 7 Application High Gain Mode vs. Temperature
V
CC
= 2.8 V,
V
GS
= 2.8 V,
V
EN
= 2.8 V,
f
= 2650 MHz
Power Gain
|S
21
| = f (
T
A
)
Supply Current
I
CC
= f (
T
A
)
18
17
16
15
14
13
6
5.5
5
4.5
4
3.5
3
−40 −20
0
20
40
60
80 100
−40 −20
0
20
40
60
80 100
T
A
[°C]
T
A
[°C]
Data Sheet
13
V3.0, 2009-07-02
BGA777L7 – Low Power Single-Band UMTS LNA
Electrical Characteristics
Measured Performance Band 7 Application Low Gain Mode vs. Frequency
Noise Figure
NF
= f (
T
A
)
Input Compression
P1dB
= f (
T
A
)
2
1.8
1.6
1.4
1.2
1
−6
−7
−8
−9
−10
−11
−12
−13
−14
0.8
0.6
−40 −20
0
20
40
60
80 100
−40 −20
0
20
40
60
80 100
T
A
[°C]
T
A
[°C]
2.14
Measured Performance Band 7 Application Low Gain Mode vs. Frequency
T
A
= 25 °C,
V
CC
= 2.8 V,
V
GS
= 0 V,
V
EN
= 2.8 V
Power Gain
|S
21
| = f (
f
)
Power Gain Wideband
|S
21
| = f (
f
)
−5
−6
0
−10
−20
−30
−40
−50
−60
−30°C
−7
−8
25°C
85°C
−9
−10
2.62 2.63 2.64 2.65 2.66 2.67 2.68 2.69
Frequency [GHz]
0
2
4
6
8
Frequency [GHz]
Data Sheet
14
V3.0, 2009-07-02
BGA777L7 – Low Power Single-Band UMTS LNA
Electrical Characteristics
Measured Performance Band 7 Application Low Gain Mode vs. Frequency
Matching
|
S
11
| = f (
f
), |
S
22
| = f (
f
)
0
−5
S
22
S
11
−10
−15
−20
−25
−30
2.62 2.63 2.64 2.65 2.66 2.67 2.68 2.69
Frequency [GHz]
Noise Figure
NF
= f (
f
)
Input Compression
P1dB
= f (
f
)
11
10
9
4
2
0
−2
−4
−6
−8
−10
8
7
6
5
2.62 2.63 2.64 2.65 2.66 2.67 2.68 2.69
2.62 2.63 2.64 2.65 2.66 2.67 2.68 2.69
Frequency [GHz]
Frequency [GHz]
Data Sheet
15
V3.0, 2009-07-02
BGA777L7 – Low Power Single-Band UMTS LNA
Electrical Characteristics
Measured Performance Band 7 Application Low Gain Mode vs. Temperature
2.15
Measured Performance Band 7 Application Low Gain Mode vs. Temperature
V
CC
= 2.8 V,
V
GS
= 0 V,
V
EN
= 2.8 V,
f
= 2650 MHz
Power Gain
|S
21
| = f (
T
A
)
Supply Current
I
CC
= f (
T
A
)
−5
−6
0.7
0.65
0.6
0.55
0.5
−7
−8
0.45
0.4
−9
0.35
−10
−40 −20
0.3
−40 −20
0
20
40
60
80 100
0
20
40
60
80 100
T
A
[°C]
T
A
[°C]
Noise Figure
NF
= f (
T
A
)
Input Compression
P1dB
= f (
T
A
)
10
9
4
2
0
8
−2
−4
−6
−8
−10
7
6
5
4
−40 −20
0
20
40
60
80 100
−40 −20
0
20
40
60
80 100
T
A
[°C]
T
A
[°C]
Data Sheet
16
V3.0, 2009-07-02
BGA777L7 – Low Power Single-Band UMTS LNA
Application Circuit and Block Diagram
UMTS Band 7 Application Circuit Schematic
3
Application Circuit and Block Diagram
3.1
UMTS Band 7 Application Circuit Schematic
L1
3
.
3nH
C1
2.
4
p
F
L3
3.3nH
RFIN
2600 MHz
RFOUT
2600 MHz
6
1
RFIN
RFOUT
L2
3.
9
n
H
C2
1.5pF
Biasing & Logic
Circuitry
5
V
EN
= 0 / 2.8 V
2
VEN
R
REF
8.2k
Ω
RREF
V
G
S
= 0 / 2.8 V
V
CC
=
2
.
8 V
3
4
VGS
VCC
C3
1
0
n
F
7
GND
BG
A
7
77
L
7
_App
l
_
Ban
d
7
_BlD.vsd
Figure 2
Application circuit with chip outline (top view)
Note
:
P
ackage paddle (Pin 0) has to be RF grounded.
Table 10
Parts List
Part Number
L1 … L3
C1 … C3
RREF
Part Type
Manufacturer
Various
Various
Size
0402
0402
0402
Comment
Wirewound, Q
≈
50
Chip inductor
Chip capacitor
Chip resistor
Various
Data Sheet
17
V3.0, 2009-07-02
BGA777L7 – Low Power Single-Band UMTS LNA
Application Circuit and Block Diagram
UMTS Band 38 Application Circuit Schematic
3.2
UMTS Band 38 Application Circuit Schematic
L1
3
.
3nH
C1
2.
4
p
F
L3
3.6nH
RFIN
2500 MHz
RFOUT
2500 MHz
6
1
RFIN
RFOUT
L2
4.
1
n
H
C2
1.2pF
Biasing & Logic
Circuitry
5
V
EN
= 0 / 2.8 V
2
VEN
R
REF
8.2k
Ω
RREF
V
G
S
= 0 / 2.8 V
V
CC
=
2
.
8 V
3
4
VGS
VCC
C3
1
0
n
F
7
GND
BG
A
7
77L
7
_
Appl
_
B
and3
8
_
BlD.vsd
Figure 3
Application circuit with chip outline (top view)
Note
:
P
ackage paddle (Pin 0) has to be RF grounded.
Table 11
Parts List
Part Number
L1 … L3
C1 … C3
RREF
Part Type
Manufacturer
Various
Various
Size
0402
0402
0402
Comment
Wirewound, Q
≈
50
Chip inductor
Chip capacitor
Chip resistor
Various
Data Sheet
18
V3.0, 2009-07-02
BGA777L7 – Low Power Single-Band UMTS LNA
Application Circuit and Block Diagram
UMTS Band 40 Application Circuit Schematic
3.3
UMTS Band 40 Application Circuit Schematic
C1
5
6
p
F
C2
10pF
L2
3.6nH
RFIN
2300 MHz
RFOUT
2300 MHz
6
1
RFIN
RFOUT
L1
2.
7
n
H
Biasing & Logic
Circuitry
5
V
EN
= 0 / 2.8 V
2
VEN
R
REF
8.2k
Ω
RREF
V
G
S
= 0 / 2.8 V
V
CC
=
2
.
8 V
3
4
VGS
VCC
C3
1
0
n
F
7
GND
BG
A
7
77L
7
_
Appl
_
B
and4
0
_
BlD.vsd
Figure 4
Application circuit with chip outline (top view)
Note
:
P
ackage paddle (Pin 0) has to be RF grounded.
Table 12
Parts List
Part Number
L1 … L2
C1 … C3
RREF
Part Type
Manufacturer
Various
Various
Size
0402
0402
0402
Comment
Wirewound, Q
≈
50
Chip inductor
Chip capacitor
Chip resistor
Various
3.4
Pin Definition
Table 13
Pin Definition and Function
Pin Number
Symbol
RFIN
VEN
VGS
VCC
RREF
RFOUT
GND
Function
1
2
3
4
5
6
7
LNA input (2600 MHz)
Band select control
Gain step control
Supply voltage
Bias current reference resistor (high gain mode)
LNA output (2600 MHz)
Package paddle; ground connection for LNA and control circuitry
Data Sheet
19
V3.0, 2009-07-02
BGA777L7 – Low Power Single-Band UMTS LNA
Application Circuit and Block Diagram
Application Board
3.5
Application Board
7
R
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Figure 5
Application board layout on 3-layer FR4. Top layer thickness: 0.2 mm, bottom layer thickness:
0.8 mm, 35
µ
m Cu metallization, gold plated. Board size: 21 x 19 mm
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Figure 6
Cross-section view of application board
Data Sheet
20
V3.0, 2009-07-02
BGA777L7 – Low Power Single-Band UMTS LNA
Application Circuit and Block Diagram
Application Board
5),1
9(1
5)287
55()
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Figure 7
Detail of application board layout
Note
:
I
n order to achieve the same performance as given in this datasheet please follow the suggested PCB-layout
as closely as possible. The position of the GND vias is critical for RF performance.
Data Sheet
21
V3.0, 2009-07-02
BGA777L7 – Low Power Single-Band UMTS LNA
Physical Characteristics
Package Dimensions
4
Physical Characteristics
4.1
Package Dimensions
NSMD
SMD
1.4
1.4
1.4
1.4
0.25
0.25
0.3
0.3
0.3
0.3
R0.1
R0.1
0.25
0.25
0.3
0.3
Stencil apertures
Stencil apertures
Copper
Solder mask
Copper
Solder mask
TSLP-7-1-FP V01
Figure 8
Recommended footprint and stencil layout for the TSLP-7-1 package
Top view
Bottom view
0.4
+0.1
±0.05
1.3
0.05 MAX.
±0.05
1
4
5
6
1)
±0.035
1.2
7
3
2
1
1)
Pin 1 marking
±0.035
6x
0
.2
1) Dimension applies to plated terminal
TSLP-7-1-PO V04
Figure 9
Package outline (top, side and bottom view)
0.5
4
Pin 1
1.45
marking
TSLP-7-1-TP V03
Figure 10
Tape & reel dimensions
Data Sheet
22
V3.0, 2009-07-02
BGA777L7 – Low Power Single-Band UMTS LNA
Physical Characteristics
Package Dimensions
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Figure 11
Marking layout
Data Sheet
23
V3.0, 2009-07-02
Published by Infineon Technologies AG
