Infineon-Technologies-BGS12SN6E6327XTSA1

BGS12SN6  

Wideband RF SPDT Switch in small package with 0.77mm

2

footprint  

Data Sheet  

Revision 2.3, 2016-09-07  

Power Management & Multimarket  

Edition September 7, 2016  

Published by  

Infineon Technologies AG  

81726 Munich, Germany  

c

ꢀ

2011 Infineon Technologies AG  

All Rights Reserved.  

Legal Disclaimer  

The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics.  

With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding  

the application of the device, Infineon

T

e

chnologies hereby disclaims any and all warranties and liabilities of any kind,  

including without limitation, warranties of non-infringement of intellectual property rights of any third part

y

.  

Information  

For further information on technolog

y

,

d

elivery terms and conditions and prices, please contact the nearest Infineon  

T

e

chnologies Office (

).  

Warnings  

Due to technical requirements, components may contain dangerous substances.

 

For information on the types in  

question, please contact the nearest Infineon

T

e

chnologies Office.  

Infineon

T

e

chnologies components may be used in life-support devices or systems only with the express written  

approval of Infineon

T

e

chnologies, if a failure of such components can reasonably be expected to cause the failure of  

that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices  

or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect  

human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.  

BGS12SN6  

Revision History  

Document No.:

BGS12SN6.pdf  

Previous Version:

Revision v2.2 – 2016-08-03  

Page  

Subjects (major changes since last revision)  

9

Update

T

e

st conditions of RF input power  

Trademarks of Infineon Technologies AG  

AURIX

TM

, C166

TM

, Can

P

A

K

TM

, CIPOS

TM

, CIPURSE

TM

,CoolGaN

TM

,CoolMOS

TM

, CoolSET

TM

, CoolSiC

TM

, CORECONTROL

TM  

,

,

,

,

,

DAVE

TM

, DI-POL

TM

,EasyPIM

TM

, EconoBRIDGE

TM

, EconoDUAL

TM

, Econo

P

ACK

TM

, EconoPIM

TM

, EiceDRIVER

TM

, eupec

TM  

FCOS

TM

, HITFET

TM

, Hybrid

P

ACK

TM

, ISOFACE

TM

, I

2

RF

TM

, Iso

P

ACK

TM

, MI

P

AQ

TM

, ModS

T

ACK

TM

, my-d

TM

, NovalithIC

TM  

Omni

T

u

ne

TM  

ReverSave

TM  

TRENCHSTOP

TM  

,

OptiMOS

TM  

,

ORIGA

TM  

SIEGET

TM  

,

OPTIGA

TM  

SIPMOS

TM  

,

PROFET

TM  

,

PRO-SIL

TM  

,

,

PRIMARION

TM  

,

Prime

P

ACK

TM  

thinQ!

TM  

,

,

RASIC

TM  

T

r

iCore

TM  

,

SatRIC

TM  

,

,

,

SOLID FLASH

TM  

SmartLEWIS

TM  

,

TEMPFET

TM  

,

.

Other Trademarks  

Advance Design System

TM

(ADS) of Agilent

T

e

chnologies, AMBA

TM

, ARM

TM

, MU

L

T

I-ICE

TM

, PRIMECELL

TM

, REA

L

V

IEW

TM  

,

THUMB

TM

of ARM Limited, UK. AUTOSAR

TM

is licensed by AUTOSAR development partnership.

 

Bluetooth

TM

of Bluetooth  

SIG Inc.

 

C

A

T

–

iq

TM

of DECT Forum.

 

COLOSSUS

TM

, FirstGPS

TM

of

T

r

imble Navigation Ltd.

 

EMV

TM

of EMVCo, LLC (Visa  

Holdings Inc.).

 

EPCOS

TM

of Epcos AG. FLEXGO

TM

of Microsoft Corporation.

 

FlexRay

TM

is licensed by FlexRay Consortium.  

HYPERTERMINAL

TM

of Hilgraeve Incorporated.

 

IEC

TM

of Commission Electrotechnique Internationale.

 

IrDA

TM

of Infrared Data  

Association Corporation.

 

ISO

TM

of INTERN

A

T

IONAL ORGANIZ

A

T

ION FOR S

T

A

NDARDIZ

A

T

ION. M

A

T

LAB

TM

of MathWorks,  

Inc. MAXIM

TM

of Maxim Integrated Products, Inc.

 

MICROTEC

TM

, NUCLEUS

TM

of Mentor Graphics Corporation.

 

Mifare

TM

of  

NX

P

.

M

IPI

TM

of MIPI Alliance, Inc.

 

MIPS

TM

of MIPS

T

e

chnologies, Inc., USA. muRata

TM

of MUR

A

TA

M

ANUFACTURING CO.,  

MICROWAVE OFFICE

TM

(MWO) of Applied Wave Research Inc., OmniVision

TM

of OmniVision

T

e

chnologies, Inc.

 

Openwave

TM  

Openwave Systems Inc.

 

RED H

A

T

TM

Red Hat, Inc.

 

RFMD

TM

RF Micro Devices, Inc.

 

SIRIUS

TM

of Sirius Sattelite Radio Inc.  

SOLARIS

TM

of Sun Microsystems, Inc.

 

S

P

A

NSION

TM

of Spansion LLC Ltd.

 

Symbian

TM

of Symbian Software Limited.

 

T

A

IYO  

YUDEN

TM

of

T

a

iyo

Y

u

den Co.

 

TEAKLITE

TM

of CEVA, Inc.

 

TEKTRONIX

TM

of

T

e

ktronix Inc.

 

TOKO

TM

of TOKO KABUSHIKI  

KAISHA

T

A

. UNIX

TM

of X/Open Company Limited.

 

VERILOG

TM

,

P

A

LLADIUM

TM

of Cadence Design Systems, Inc.

 

V

L

Y

NQ

TM

of  

Texas Instruments Incorporated.

 

VXWORKS

TM

, WIND RIVER

TM

of WIND RIVER SYSTEMS, INC. ZETEX

TM

of Diodes Zetex  

Limited.  

Last

T

r

ademarks Update 2012-12-13  

Data Sheet  

3

Revision 2.3 – 2016-09-07  

BGS12SN6  

Contents  

1

2

3

4

5

6

7

Features  

7

7

Product Description  

Maximum Ratings  

Operation Ranges  

RF Characteristics  

Pin Description  

9

9

10  

12  

12  

Package Information  

Data Sheet  

4

Revision 2.3 – 2016-09-07  

BGS12SN6  

List of Figures  

1

BGS12SN6 Block Diagram

 

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  

8

2

3

4

5

6

7

8

9

Pin Configuration

 

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

 

12  

Package Outline (TSNP-6-2)

 

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

 

13  

Package Outline (TSNP-6-8)

 

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

 

13  

Footprint (TSNP-6-2/-8)

 

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

 

14  

Pin 1 Marking (TSNP-6-2 top view)

 

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

 

14  

Pin 1 Marking (TSNP-6-8 top view)

 

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

 

14  

T

a

pe Drawing (TSNP-6-2)

 

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

 

15  

T

a

pe Drawing (TSNP-6-8)

 

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

 

15  

Data Sheet  

5

Revision 2.3 – 2016-09-07  

BGS12SN6  

List of Tables  

1

Ordering Information

 

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  

T

r

uth

T

a

ble

 

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  

Maximum Ratings

 

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  

Operation Ranges

 

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  

RF Input Power

 

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  

RF Characteristics

 

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

 

10  

Pin Description

 

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

 

12  

Mechanical Data

 

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

 

12  

7

8

9

9

9

2

3

4

5

6

7

8

Data Sheet  

6

Revision 2.3 – 2016-09-07  

BGS12SN6  

BGS12SN6 Wideband RF SPDT Switch in small package with 0.77mm

2  

footprint  

1 Features  

•

2 high-linearity TRx paths with power handling capability of up to  

30 dBm  

•

High switching speed, ideal for WLAN and Bluetooth applications  

•

All ports fully bi-directional  

•

Low insertion loss  

•

Low harmonic generation  

•

High port-to-port-isolation  

•

0.05 to 6 GHz coverage  

•

High ESD robustness  

•

On-chip control logic  

•

Very small leadless and halogen free package TSNP-6-2(-8)  

(0.7×1.1 mm

2

) with super low height of 0.375 mm  

•

No decoupling capacitors required if no DC applied on RF lines  

•

RoHS compliant package  

2 Product

 

Description  

The BGS12SN6 RF MOS switch is specifically designed for WLAN and Bluetooth applications.

 

Any of the 2 ports  

can be used as termination of the diversity antenna handling up to 30 dBm.  

This single supply chip integrates on-chip CMOS logic driven by a simple, single-pin CMOS or TTL compatible  

control input signal.

 

The 0.1 dB compression point exceeds the switch’s maximum input power level, resulting in  

linear performance at all signal levels. The RF switch has a very low insertion loss of 0.25 dB in the 1 GHz and 0.29  

dB in the 2.5 GHz range.  

Unlike GaAs technolog

y

, external DC blocking capacitors at the RF ports are only required if DC voltage is applied  

externall

y

.  

The BGS12SN6 RF switch is manufactured in Infineon’s patented MOS technolog

y

,

o

ffering the performance of GaAs  

with the economy and integration of conventional CMOS including the inherent higher ESD robustness.  

The device has a very small size of only 0.7×1.1mm

2

and a maximum height of 0.375 mm.  

Table 1: Ordering Information  

Type  

Package  

Marking  

BGS12SN6  

TSNP-6-2/-8  

T

Data Sheet  

7

Revision 2.3 – 2016-09-07  

BGS12SN6  

RFin  

BGS12SN6  

RF1  

RF2  

SPDT  

Decoder + ESD  

Protection  

Figure 1:

BGS12SN6 Block Diagram  

Table 2: Truth Table  

Switched Paths  

RFin – RF1  

Ctrl  

0

RFin – RF2  

1

Data Sheet  

8

Revision 2.3 – 2016-09-07  

BGS12SN6  

3 Maximum

 

Ratings  

Table 3: Maximum Ratings

at

T

A

= 25

◦

C, unless otherwise specified  

Parameter  

Symbol  

Values  

Unit  

Note / Test Condition  

Min.  

-0.5  

0

Typ.  

Max.  

3.6  

0

Supply Voltage  

V

dd  

–

–

V

V

–

Maximum DC-Voltage on Other Pins

 

V

DC  

No external DC voltage  

allowed  

–

Storage

T

e

mperature Range  

RF Input Power  

T

STG  

P

RF  

T

j  

-65  

–

–

–

–

150  

32  

dBm CW,

 

50 Ohm  

Junction

T

e

mperature  

ESD Capability  

–

125  

–

Human Body Model

1)  

ESD Capability RFin Port

2)  

V

ESD

_

HBM

−

1000  

V

ESD

_

RFin

−

8  

–

–

+1000  

+8  

V

–

kV  

RFin versus GND, with  

27 nH shunt inductor  

Attention:  

Stresses above the max.

 

values listed here may cause permanent damage to the device.

 

Exposure to ab-  

solute maximum rating conditions for extended periods may affect device reliability.

 

Maximum ratings are  

absolute ratings; exceeding only one of these values may cause irreversible damage to the integrated circuit.  

4 Operation

 

Ranges  

Table 4: Operation Ranges  

Parameter  

Symbol  

Values  

Unit  

Note / Test Condition  

Min.  

-40  

Typ.  

25  

–

Max.  

85  

Ambient

T

e

mperature  

RF Frequency  

T

A  

GHz  

V

–

–

–

–

–

f

0.1  

6

Supply Voltage  

V

dd  

1.8  

–

3.5  

0.43  

V

DD  

Control Voltage Low  

Control Voltage High  

V

Ctrl

_

L  

V

Ctrl

_

H  

-0.3  

1.35  

–

V

–

V

Table 5: RF Input Power  

Parameter  

Symbol  

Values  

Typ.  

–

Unit  

Note / Test Condition  

Min.  

Max.  

RF Input Power (50

Ω

)  

P

In  

–

30  

dBm CW,

 

50 Ohm  

Data Sheet  

9

Revision 2.3 – 2016-09-07  

BGS12SN6  

5 RF

 

Characteristics  

Table 6: RF Characteristics  

T

e

st Conditions (unless otherwise specified):  

•

T

e

rminating port impedance:

Z

0

= 50

Ω  

•

T

e

mperature range:

T

A

= -40 … +85

◦

C  

•

Supply voltage:

V

DD

= 1.8 … 3.4

V  

•

Input power:

P

IN

= 0

dBm  

Parameter  

Symbol  

Values  

Typ.  

Unit  

Note / Test Condition  

Min.  

Max.  

Insertion Loss  

–

–

–

–

–

–

0.23  

0.25  

0.28  

0.29  

0.53  

0.65  

0.42  

0.43  

0.45  

0.50  

0.78  

0.90  

dB  

dB  

dB  

dB  

dB  

dB  

699-824 MHz  

824-915 MHz  

1710-1910 MHz  

2170-2690 MHz  

5000 MHz  

All RF Ports  

Insertion Loss

1  

All RF Ports  

Return Loss  

All RF Ports  

IL  

6000 MHz  

–

–

–

–

–

–

0.23  

0.25  

0.28  

0.29  

0.53  

0.65  

0.35  

0.35  

0.40  

0.45  

0.70  

0.85  

dB  

dB  

dB  

dB  

dB  

dB  

699-824 MHz  

824-915 MHz  

1710-1910 MHz  

2170-2690 MHz  

5000 MHz  

IL  

6000 MHz  

22  

22  

20  

17  

12  

12  

30  

30  

25  

20  

18  

16  

–

–

–

–

–

–

dB  

dB  

dB  

dB  

dB  

dB  

699-824 MHz  

824-915 MHz  

1710-1910 MHz  

2170-2690 MHz  

5000 MHz  

RL  

6000 MHz  

1

T

A

=

+25

◦

C, V

DD

= 2.6

V  

Data Sheet  

10  

Revision 2.3 – 2016-09-07  

BGS12SN6  

Parameter  

Isolation  

Symbol  

Values  

Typ.  

Unit  

Note / Test Condition  

Min.  

Max.  

36  

35  

28  

26  

15  

15  

43  

42  

34  

30  

18  

18  

42  

40  

32  

28  

19  

18  

47  

45  

38  

33  

21  

21  

–

–

–

–

–

–

–

–

–

–

–

–

dB  

dB  

dB  

dB  

dB  

dB  

dB  

dB  

dB  

dB  

dB  

dB  

699-824 MHz  

824-915 MHz  

1710-1910 MHz  

2170-2690 MHz  

5000 MHz  

RFin to RF1/RF2 Port  

ISO

RFin

−

RFx  

6000 MHz  

699-824 MHz  

824-915 MHz  

1710-1910 MHz  

2170-2690 MHz  

5000 MHz  

RF1 to RF2 Port /  

RF2 to RF1 Port  

ISO

Por

t

−

Port  

6000 MHz  

Harmonic Generation up to 12.75 GHz  

All RF Ports, 2

nd

Harmonic  

–

–

-80  

-87  

-75  

-80  

dBc  

dBc  

V

DD

= 2.85

V

,

T

A

= 25

◦

C,  

P

Harm  

All RF Ports, 3

rd

Harmonic  

f

=

824

MHz

,

P

in  

=

27.5

dBm

, 50

 

% duty cycle,  

50

Ω  

Compression Point 0.1dB  

P0.1dB  

P

0.1

dB  

–

–

34  

dBm  

–

Intermodulation Distortion in Rx Band  

IMD2  

IMD3  

IMD

2  

IMD

3  

–

–

-110  

-130  

-100  

-120  

dBm Tx

 

= 10 dBm, Interferer = -15  

dBm dBm,

 

50

Ω  

Switching Time and Current Consumption  

RF Rise Time  

t

10%

−

90%  

t

Ctrl

−

RF  

–

–

60  

100  

500  

ns  

ns  

10% – 90% of RF Signal  

Ctrl to RF Time  

400  

50% of Ctrl Signal to 90% of  

RF Signal  

Power Up Settling Time  

Supply Current  

t

PUP  

I

dd  

–

–

–

5

15  

µ

s  

After power down  

100  

1

180  

10  

µ

A  

µ

A  

–

–

Control Current  

I

Ctrl  

Note: All electrical characteristics are measured with all RF ports terminated by 50

Ω

loads.  

Data Sheet  

11  

Revision 2.3 – 2016-09-07  

BGS12SN6  

6 Pin

 

Description  

Figure 2:

Pin Configuration  

Table 7: Pin Description  

Pin No.  

Name  

Pin  

Type  

I/O  

Buffer Function  

Type  

1

2

3

4

5

6

RF2  

RF Port 2  

Ground  

GND  

RF1  

GND  

I/O  

RF Port 1  

Vdd  

PWR  

I/O  

Supply Voltage  

RFin  

CTRL  

RF Port In  

Control Pin  

I

7 Package

 

Information  

Table 8: Mechanical Data  

Parameter  

X-Dimension  

Y

–

Dimension  

Size  

Symbol  

Value  

Unit  

mm  

mm  

mm

2  

mm  

X

0.7

±

0.05  

1.1

±

0.05  

0.77  

Y

Size  

H

Height  

0.375

+0.025/

−

0.025  

Data Sheet  

12  

Revision 2.3 – 2016-09-07  

BGS12SN6  

Top view  

Bottom view  

+0.025  

-0.015  

0.375  

0.02 MAX.  

±0.05  

0.7  

1)  

±0.05  

0.2  

3

4

2

1

5

6

±0.05  

0.4  

Pin 1 marking  

1) Dimension applies to plated terminals  

Figure 3:

Package Outline (TSNP-6-2)  

TSNP-6-2-PO V01  

ꢌꢓꢔaꢕꢖꢗꢘ  

ꢙꢓꢚꢚꢓꢛaꢕꢖꢗꢘ  

ꢆꢀꢁꢀꢉꢇ  

ꢀꢁꢂꢈꢇ  

ꢆꢀꢁꢀꢇ  

ꢀꢁꢈ  

ꢄ

ꢀꢁꢀꢂaꢃꢄꢅꢁ  

ꢋ

ꢌ

ꢄ

ꢍꢎꢏꢐꢐ  

ꢆꢀꢁꢀꢇ  

ꢀꢁꢉ  

ꢑꢥ  

ꢀꢁꢊ ꢄ  

ꢂ

ꢉ

ꢒ

ꢇ

ꢑ

ꢊ

ꢀꢁꢒ  

ꢙ

ꢜꢖꢝaꢊaꢛꢞꢟꢠꢖꢝꢡ  

ꢌꢋꢍꢜꢢꢑꢢꢣꢢꢜꢏa ꢤꢀꢂ  

Figure 4:

Package Outline (TSNP-6-8)  

Data Sheet  

13  

Revision 2.3 – 2016-09-07  

BGS12SN6  

ꢇꢆꢤꢥ  

ꢀꢁꢄ  

ꢀꢁꢄ  

ꢀꢁꢂꢃ  

ꢀꢁꢂꢃ  

ꢠꢚꢐꢑꢒꢓꢔꢕmꢐꢡꢔꢓꢟꢒꢑꢚꢚmꢏꢀꢀmꢢꢞꢣ  

ꢆꢐꢑꢒꢓꢔꢕmꢖꢗꢑꢘꢐꢙꢘꢑꢚ  

ꢛꢜꢗꢗꢑꢘ  

ꢆꢜꢕꢝꢑꢘmꢞꢖꢚꢟ  

ꢅꢆꢇꢈꢉꢊꢉꢂꢋꢉꢌꢉꢍꢈmꢎꢀꢏ  

Figure 5:

Footprint (TSNP-6-2/-8)  

ꢀ

ꢁ

ꢂꢃꢄꢅꢆꢇꢃ  

ꢈꢆꢉꢊꢋꢌꢁꢄꢇꢍꢊꢍꢄꢅꢆꢇꢃ  

ꢐꢘꢉꢄꢗꢄꢙꢍꢚꢛꢘꢉꢜ  

ꢀꢎꢏꢐꢑꢒꢑꢓꢑꢈꢔ ꢕꢖꢗ  

Figure 6:

Pin 1 Marking (TSNP-6-2 top view)  

ꢊ

ꢋ

ꢌꢍꢃꢎꢏꢐꢍ  

ꢖꢏꢂꢛꢜꢝꢋꢃꢐꢆꢛꢆꢃꢎꢏꢐꢍ  

ꢀꢁꢂꢃꢄꢃꢅꢆꢇꢈꢁꢂꢉ  

ꢊꢑꢒꢀꢓꢔꢓꢕꢓꢖꢗꢃ ꢘꢙꢚ  

Figure 7:

Pin 1 Marking (TSNP-6-8 top view)  

Data Sheet  

14  

Revision 2.3 – 2016-09-07  

BGS12SN6  

0.5  

Pin 1  

marking  

2

0.85  

TSNP-6-2-TP V01  

Figure 8:

T

a

pe Drawing (TSNP-6-2)  

ꢁꢂꢃꢄ  

ꢅꢆꢇꢈꢉ  

ꢊꢋꢌꢍꢆꢇꢎ  

ꢀ

ꢁꢂꢔꢖ  

ꢏꢐꢑꢅꢒꢓꢒꢔꢒꢏꢅꢈ ꢕꢁꢉ  

Figure 9:

T

a

pe Drawing (TSNP-6-8)  

Data Sheet  

15  

Revision 2.3 – 2016-09-07  

w w w . i n f i n e o n . c o m  

Published by Infineon Technologies AG