Infineon-Technologies-BSB008NE2LX
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MOSFET
MetalꢀOxideꢀSemiconductorꢀFieldꢀEffectꢀTransistor
OptiMOS
TM
OptiMOS
TM
ꢀPower-MOSFET,ꢀ25ꢀV
BSB008NE2LX
DataꢀSheet
Rev.ꢀ2.0
Final
PowerꢀManagementꢀ&ꢀMultimarket
OptiMOS
TM
ꢀPower-MOSFET,ꢀ25ꢀV
BSB008NE2LX
CanPAKꢀMX-size
1ꢀꢀꢀꢀꢀDescription
Features
•ꢀOptimizedꢀforꢀe-fuseꢀandꢀOR-ingꢀapplication
•ꢀUltraꢀlowꢀRdsonꢀinꢀCanPAK-MXꢀfootprint
•ꢀLowꢀprofileꢀ(<0.7ꢀmm)
•ꢀ100%ꢀavalancheꢀtested
•ꢀ100%ꢀRgꢀTested
•ꢀDouble-sidedꢀcooling
•ꢀCompatibleꢀwithꢀDirectFET®ꢀpackageꢀMXꢀfootprintꢀandꢀoutlineꢀ
1)
ꢀ
•ꢀQualifiedꢀaccordingꢀtoꢀJEDEC
2)
ꢀꢀforꢀtargetꢀapplications
Tableꢀ1ꢀꢀꢀꢀꢀKeyꢀPerformanceꢀParameters
Parameter
Value
Unit
Gate
Source
V
DS
25
V
R
DS(on),max
I
D
0.8
m
Ω
A
180
74
Q
oss
nC
nC
Q
g
(0V..10V)
258
Typeꢀ/ꢀOrderingꢀCode
Package
Marking
RelatedꢀLinks
BSB008NE2LX
MG-WDSON-2
04E2
–
1)
CanPAK
TM
uses DirectFET ® technology licensed from International Rectifier Corporation. DirectFET® is a registered
trademark of International Rectifier Corporation.
2)
J-STD20 and JESD22
Final Data Sheet
2
Rev.ꢀ2.0,ꢀꢀ2015-01-20
OptiMOS
TM
ꢀPower-MOSFET,ꢀ25ꢀV
BSB008NE2LX
TableꢀofꢀContents
Description .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Maximum ratings
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
4
Thermal characteristics
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
5
Electrical characteristics diagrams
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
7
Package Outlines
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
11
Revision History
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
14
Disclaimer .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
14
Final Data Sheet
3
Rev.ꢀ2.0,ꢀꢀ2015-01-20
OptiMOS
TM
ꢀPower-MOSFET,ꢀ25ꢀV
BSB008NE2LX
2ꢀꢀꢀꢀꢀMaximumꢀratings
atꢀ
T
j
ꢀ=ꢀ25ꢀ°C,ꢀunlessꢀotherwiseꢀspecified
Tableꢀ2ꢀꢀꢀꢀꢀMaximumꢀratings
Values
Typ.
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Max.
Min.
–
–
–
–
–
–
180
165
46
V
GS
=10ꢀV,ꢀ
T
C
=25ꢀ°C
V
GS
=10ꢀV,ꢀ
T
C
=100ꢀ°C
V
GS
=10ꢀV,ꢀ
T
A
=25ꢀ°C,ꢀ
R
thJA
=45ꢀK/W
Continuous drain current
I
D
A
Pulsed drain current
1)
I
D,pulse
I
AS
–
–
–
–
–
400
40
A
T
C
=25ꢀ°C
Avalanche current, single pulse
2)
Avalanche energy, single pulse
Gate source voltage
–
A
T
C
=25ꢀ°C
E
AS
V
GS
–
600
20
mJ
V
I
D
=40ꢀA,ꢀ
R
GS
=25ꢀ
Ω
-20
–
–
–
–
–
89
2.8
T
C
=25ꢀ°C
T
A
=25ꢀ°C,ꢀ
R
thJA
=45ꢀK/W
Power dissipation
P
tot
W
IEC climatic category;
DIN IEC 68-1: 40/150/56
Operating and storage temperature
T
j
,ꢀ
T
stg
-40
–
150
°C
3ꢀꢀꢀꢀꢀThermalꢀcharacteristics
Tableꢀ3ꢀꢀꢀꢀꢀThermalꢀcharacteristics
Values
Typ.
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Thermal resistance, junction – case,
bottom
R
thJC
R
thJC
R
thJA
–
1.0
–
K/W
K/W
K/W
–
–
–
Thermal resistance, junction – case,
top
–
–
–
–
1.4
45
Device on PCB,
6 cm
2
cooling area
3)
1)
See figure 3 for more detailed information
2)
See figure 13 for more detailed information
3)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection.
PCB is vertical in still air.
Final Data Sheet
4
Rev.ꢀ2.0,ꢀꢀ2015-01-20
OptiMOS
TM
ꢀPower-MOSFET,ꢀ25ꢀV
BSB008NE2LX
4ꢀꢀꢀꢀꢀElectricalꢀcharacteristics
Tableꢀ4ꢀꢀꢀꢀꢀStaticꢀcharacteristics
Values
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Max.
Min.
25
Typ.
Drain-source breakdown voltage
Gate threshold voltage
V
(BR)DSS
V
GS(th)
–
–
–
V
V
V
GS
=0ꢀV,ꢀ
I
D
=1ꢀmA
1.2
2
V
DS
=
V
GS
,ꢀ
I
D
=250ꢀµA
–
–
0.1
10
10
100
V
DS
=25ꢀV,ꢀ
V
GS
=0ꢀV,ꢀ
T
j
=25ꢀ°C
V
DS
=25ꢀV,ꢀ
V
GS
=0ꢀV,ꢀ
T
j
=125ꢀ°C
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
I
DSS
µA
nA
I
GSS
–
10
100
V
GS
=20ꢀV,ꢀ
V
DS
=0ꢀV
–
–
0.75
0.6
1.0
0.8
V
GS
=4.5ꢀV,ꢀ
I
D
=25ꢀA
V
GS
=10ꢀV,ꢀ
I
D
=30ꢀA
R
DS(on)
m
Ω
Gate resistance
R
G
g
fs
0.3
0.5
1.0
–
Ω
–
Transconductance
120
240
S
|
V
DS
|>2|
I
D
|
R
DS(on)max
,ꢀ
I
D
=30ꢀA
Tableꢀ5ꢀꢀꢀꢀꢀDynamicꢀcharacteristics
Values
Typ.
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Input capacitance
C
iss
C
oss
C
rss
–
–
–
12000 16000 pF
3800 5100 pF
V
GS
=0ꢀV,ꢀ
V
DS
=12ꢀV,ꢀ
f
=1ꢀMHz
V
GS
=0ꢀV,ꢀ
V
DS
=12ꢀV,ꢀ
f
=1ꢀMHz
V
GS
=0ꢀV,ꢀ
V
DS
=12ꢀV,ꢀ
f
=1ꢀMHz
Output capacitance
Reverse transfer capacitance
3300
12.6
–
–
pF
ns
V
DD
=12ꢀV,ꢀ
V
GS
=10ꢀV,ꢀ
I
D
=30ꢀA,
R
G,ext
=1.6ꢀ
Ω
Turn-on delay time
Rise time
t
d(on)
t
r
t
d(off)
t
f
–
–
–
–
V
DD
=12ꢀV,ꢀ
V
GS
=10ꢀV,ꢀ
I
D
=30ꢀA,
R
G,ext
=1.6ꢀ
Ω
47.2
75
–
–
–
ns
ns
ns
V
DD
=12ꢀV,ꢀ
V
GS
=10ꢀV,ꢀ
I
D
=30ꢀA,
R
G,ext
=1.6ꢀ
Ω
Turn-off delay time
Fall time
V
DD
=12ꢀV,ꢀ
V
GS
=10ꢀV,ꢀ
I
D
=30ꢀA,
R
G,ext
=1.6ꢀ
Ω
32.4
Tableꢀ6ꢀꢀꢀꢀꢀGateꢀchargeꢀcharacteristics
1)
ꢀ
Values
Typ.
27
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
36
–
Gate to source charge
Gate charge at threshold
Gate to drain charge
Switching charge
Q
gs
–
–
–
–
–
–
–
–
–
nC
nC
nC
nC
nC
V
V
DD
=12ꢀV,ꢀ
I
D
=30ꢀA,ꢀ
V
GS
=0ꢀtoꢀ4.5ꢀV
V
DD
=12ꢀV,ꢀ
I
D
=30ꢀA,ꢀ
V
GS
=0ꢀtoꢀ4.5ꢀV
V
DD
=12ꢀV,ꢀ
I
D
=30ꢀA,ꢀ
V
GS
=0ꢀtoꢀ4.5ꢀV
V
DD
=12ꢀV,ꢀ
I
D
=30ꢀA,ꢀ
V
GS
=0ꢀtoꢀ4.5ꢀV
V
DD
=12ꢀV,ꢀ
I
D
=30ꢀA,ꢀ
V
GS
=0ꢀtoꢀ4.5ꢀV
V
DD
=12ꢀV,ꢀ
I
D
=30ꢀA,ꢀ
V
GS
=0ꢀtoꢀ4.5ꢀV
V
DD
=12ꢀV,ꢀ
I
D
=30ꢀA,ꢀ
V
GS
=0ꢀtoꢀ10ꢀV
V
DS
=0.1ꢀV,ꢀ
V
GS
=0ꢀtoꢀ4.5ꢀV
Q
g(th)
Q
gd
19
73
110
–
Q
sw
81
Gate charge total
Q
g
146
2.2
258
88
194
–
Gate plateau voltage
Gate charge total
V
plateau
Q
g
343
–
nC
nC
nC
Gate charge total, sync. FET
Output charge
Q
g(sync)
Q
oss
74
98
V
DD
=12ꢀV,ꢀ
V
GS
=0ꢀV
1)
See
″
Gate charge waveforms
″
for parameter definition
Final Data Sheet
5
Rev.ꢀ2.0,ꢀꢀ2015-01-20
OptiMOS
TM
ꢀPower-MOSFET,ꢀ25ꢀV
BSB008NE2LX
Tableꢀ7ꢀꢀꢀꢀꢀReverseꢀdiode
Values
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Max.
Min.
Typ.
–
Diode continuous forward current
Diode pulse current
I
S
–
–
–
–
89
A
T
C
=25ꢀ°C
I
S,pulse
V
SD
Q
rr
–
400
A
T
C
=25ꢀ°C
Diode forward voltage
0.78
20
–
–
V
V
GS
=0ꢀV,ꢀ
I
F
=30ꢀA,ꢀ
T
j
=25ꢀ°C
V
R
=15ꢀV,ꢀ
I
F
=
I
S
,ꢀd
i
F
/d
t
=400ꢀA/µs
Reverse recovery charge
nC
Final Data Sheet
6
Rev.ꢀ2.0,ꢀꢀ2015-01-20
OptiMOS
TM
ꢀPower-MOSFET,ꢀ25ꢀV
BSB008NE2LX
5ꢀꢀꢀꢀꢀElectricalꢀcharacteristicsꢀdiagrams
Diagramꢀ1:ꢀPowerꢀdissipation
Diagramꢀ2:ꢀDrainꢀcurrent
100
200
160
120
80
90
80
70
60
50
40
30
20
10
0
40
0
0
40
80
120
160
0
40
80
120
160
T
C
ꢀ[°C]
T
C
ꢀ[°C]
P
tot
=f(
T
C
)
I
D
=f(
T
C
);ꢀ
V
GS
≥
10ꢀV
Diagramꢀ3:ꢀSafeꢀoperatingꢀarea
Diagramꢀ4:ꢀMax.ꢀtransientꢀthermalꢀimpedance
10
3
10
1
1 µs
10 µs
10
2
100 µs
1 ms
10
0
0.5
0.2
0.1
10 ms
10
1
DC
10
-1
0.05
10
0
10
-1
10
-2
0.02
0.01
10
-2
single pulse
10
-3
10
-1
10
0
10
1
10
2
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
V
DS
ꢀ[V]
t
p
ꢀ[s]
I
D
=f(
V
DS
);ꢀ
T
C
=25ꢀ°C;ꢀ
D
=0;ꢀparameter:ꢀ
t
p
Z
thJC
=f(
t
p
);ꢀparameter:ꢀ
D
=
t
p
/
T
Final Data Sheet
7
Rev.ꢀ2.0,ꢀꢀ2015-01-20
OptiMOS
TM
ꢀPower-MOSFET,ꢀ25ꢀV
BSB008NE2LX
Diagramꢀ5:ꢀTyp.ꢀoutputꢀcharacteristics
Diagramꢀ6:ꢀTyp.ꢀdrain-sourceꢀonꢀresistance
800
1.5
10 V
5 V
700
4.5 V
3.2 V
4 V
600
3.2 V
1.0
500
400
300
200
100
0
3.5 V
4 V
3 V
4.5 V
5 V
7 V
10 V
2.8 V
0.5
0.0
0
1
2
3
0
10
20
30
40
50
V
DS
ꢀ[V]
I
D
ꢀ[A]
I
D
=f(
V
DS
);ꢀ
T
j
=25ꢀ°C;ꢀparameter:ꢀ
V
GS
R
DS(on)
=f(
I
D
);ꢀ
T
j
=25ꢀ°C;ꢀparameter:ꢀ
V
GS
Diagramꢀ7:ꢀTyp.ꢀtransferꢀcharacteristics
Diagramꢀ8:ꢀTyp.ꢀforwardꢀtransconductance
400
600
500
400
300
200
100
0
320
240
160
150 °C
25 °C
80
0
0
1
2
3
4
5
0
40
80
120
160
V
GS
ꢀ[V]
I
D
ꢀ[A]
I
D
=f(
V
GS
);ꢀ|
V
DS
|>2|
I
D
|
R
DS(on)max
;ꢀparameter:ꢀ
T
j
g
fs
=f(
I
D
);ꢀ
T
j
=25ꢀ°C
Final Data Sheet
8
Rev.ꢀ2.0,ꢀꢀ2015-01-20
OptiMOS
TM
ꢀPower-MOSFET,ꢀ25ꢀV
BSB008NE2LX
Diagramꢀ9:ꢀDrain-sourceꢀon-stateꢀresistance
Diagramꢀ10:ꢀTyp.ꢀgateꢀthresholdꢀvoltage
2.5
2.0
1.5
1.0
0.5
0.0
1.2
1.0
0.8
typ
0.6
0.4
0.2
0.0
-40 -20
0
20
40
60
80 100
120 140 160
-40 -20
0
20
40
60
80 100
120 140
T
j
ꢀ[°C]
T
j
ꢀ[°C]
R
DS(on)
=f(
T
j
);ꢀ
I
D
=30ꢀA;ꢀ
V
GS
=10ꢀV
V
GS(th)
=f(
T
j
);ꢀ
V
GS
=
V
DS
;ꢀ
I
D
=250ꢀµA
Diagramꢀ11:ꢀTyp.ꢀcapacitances
Diagramꢀ12:ꢀForwardꢀcharacteristicsꢀofꢀreverseꢀdiode
10
5
10
3
25 °C
150 °C
Ciss
10
4
10
3
10
2
10
2
10
1
10
0
Coss
Crss
0
5
10
15
20
25
0.0
0.5
1.0
1.5
2.0
V
DS
ꢀ[V]
V
SD
ꢀ[V]
C
=f(
V
DS
);ꢀ
V
GS
=0ꢀV;ꢀ
f
=1ꢀMHz
I
F
=f(
V
SD
);ꢀparameter:ꢀ
T
j
Final Data Sheet
9
Rev.ꢀ2.0,ꢀꢀ2015-01-20
OptiMOS
TM
ꢀPower-MOSFET,ꢀ25ꢀV
BSB008NE2LX
Diagramꢀ13:ꢀAvalancheꢀcharacteristics
Diagramꢀ14:ꢀTyp.ꢀgateꢀcharge
10
2
10
9
8
7
6
5
4
3
2
1
0
5 V
12 V
25 °C
20 V
100 °C
125 °C
10
1
10
0
10
0
10
1
10
2
10
3
0
50
100
150
200
250
t
AV
ꢀ[µs]
Q
gate
ꢀ[nC]
I
AS
=f(
t
AV
);ꢀ
R
GS
=25ꢀ
Ω
;ꢀparameter:ꢀ
T
j(start)
V
GS
=f(
Q
gate
);ꢀ
I
D
=30ꢀAꢀpulsed;ꢀparameter:ꢀ
V
DD
Diagramꢀ15:ꢀDrain-sourceꢀbreakdownꢀvoltage
Gate charge waveforms
28
27
26
25
24
23
22
21
20
-60
-20
20
60
100
140
180
T
j
ꢀ[°C]
V
BR(DSS)
=f(
T
j
);ꢀ
I
D
=1ꢀmA
Final Data Sheet
10
Rev.ꢀ2.0,ꢀꢀ2015-01-20
OptiMOS
TM
ꢀPower-MOSFET,ꢀ25ꢀV
BSB008NE2LX
6ꢀꢀꢀꢀꢀPackageꢀOutlines
Figureꢀ1ꢀꢀꢀꢀꢀOutlineꢀMG-WDSON-2,ꢀdimensionsꢀinꢀmm/inches
Final Data Sheet
11
Rev.ꢀ2.0,ꢀꢀ2015-01-20
OptiMOS
TM
ꢀPower-MOSFET,ꢀ25ꢀV
BSB008NE2LX
Figureꢀ2ꢀꢀꢀꢀꢀOutlineꢀTapeꢀCanPAKꢀMX,ꢀdimensionsꢀinꢀmm
Final Data Sheet
12
Rev.ꢀ2.0,ꢀꢀ2015-01-20
OptiMOS
TM
ꢀPower-MOSFET,ꢀ25ꢀV
BSB008NE2LX
Figureꢀ3ꢀꢀꢀꢀꢀOutlineꢀBoardpadsꢀandꢀaperturesꢀCanPAKꢀMX,ꢀdimensionsꢀinꢀmm
Final Data Sheet
13
Rev.ꢀ2.0,ꢀꢀ2015-01-20
OptiMOS
TM
ꢀPower-MOSFET,ꢀ25ꢀV
BSB008NE2LX
RevisionꢀHistory
BSB008NE2LX
Revision:ꢀ2015-01-20,ꢀRev.ꢀ2.0
Previous Revision
Revision Date
2.0
Subjects (major changes since last revision)
Release of final version
2015-01-20
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©ꢀ2015ꢀInfineonꢀTechnologiesꢀAG
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LegalꢀDisclaimer
Theꢀinformationꢀgivenꢀinꢀthisꢀdocumentꢀshallꢀinꢀnoꢀeventꢀbeꢀregardedꢀasꢀaꢀguaranteeꢀofꢀconditionsꢀorꢀcharacteristics.ꢀWith
respectꢀtoꢀanyꢀexamplesꢀorꢀhintsꢀgivenꢀherein,ꢀanyꢀtypicalꢀvaluesꢀstatedꢀhereinꢀand/orꢀanyꢀinformationꢀregardingꢀtheꢀapplication
ofꢀtheꢀdevice,ꢀInfineonꢀTechnologiesꢀherebyꢀdisclaimsꢀanyꢀandꢀallꢀwarrantiesꢀandꢀliabilitiesꢀofꢀanyꢀkind,ꢀincludingꢀwithout
limitation,ꢀwarrantiesꢀofꢀnon-infringementꢀofꢀintellectualꢀpropertyꢀrightsꢀofꢀanyꢀthirdꢀparty.
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Warnings
Dueꢀtoꢀtechnicalꢀrequirements,ꢀcomponentsꢀmayꢀcontainꢀdangerousꢀsubstances.ꢀForꢀinformationꢀonꢀtheꢀtypesꢀinꢀquestion,
pleaseꢀcontactꢀtheꢀnearestꢀInfineonꢀTechnologiesꢀOffice.
TheꢀInfineonꢀTechnologiesꢀcomponentꢀdescribedꢀinꢀthisꢀDataꢀSheetꢀmayꢀbeꢀusedꢀinꢀlife-supportꢀdevicesꢀorꢀsystemsꢀand/or
automotive,ꢀaviationꢀandꢀaerospaceꢀapplicationsꢀorꢀsystemsꢀonlyꢀwithꢀtheꢀexpressꢀwrittenꢀapprovalꢀofꢀInfineonꢀTechnologies,ꢀifꢀa
failureꢀofꢀsuchꢀcomponentsꢀcanꢀreasonablyꢀbeꢀexpectedꢀtoꢀcauseꢀtheꢀfailureꢀofꢀthatꢀlife-support,ꢀautomotive,ꢀaviationꢀand
aerospaceꢀdeviceꢀorꢀsystemꢀorꢀtoꢀaffectꢀtheꢀsafetyꢀorꢀeffectivenessꢀofꢀthatꢀdeviceꢀorꢀsystem.ꢀLifeꢀsupportꢀdevicesꢀorꢀsystemsꢀare
intendedꢀtoꢀbeꢀimplantedꢀinꢀtheꢀhumanꢀbodyꢀorꢀtoꢀsupportꢀand/orꢀmaintainꢀandꢀsustainꢀand/orꢀprotectꢀhumanꢀlife.ꢀIfꢀtheyꢀfail,ꢀitꢀis
reasonableꢀtoꢀassumeꢀthatꢀtheꢀhealthꢀofꢀtheꢀuserꢀorꢀotherꢀpersonsꢀmayꢀbeꢀendangered.
Final Data Sheet
14
Rev.ꢀ2.0,ꢀꢀ2015-01-20
