Infineon-Technologies-BSC010N04LS
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BSC010N04LS
MOSFET
OptiMOS
TM
ꢀPower-MOSFET,ꢀ40ꢀV
TDSON-8ꢀFLꢀ(enlargedꢀsourceꢀinterconnection)
8
7
6
5
Features
•ꢀOptimizedꢀforꢀsychronousꢀrectification
•ꢀVeryꢀlowꢀon-resistanceꢀ
R
DS(on)
•ꢀ100%ꢀavalancheꢀtested
1
5
2
6
7
3
4
8
•ꢀSuperiorꢀthermalꢀresistance
•ꢀN-channel,ꢀlogicꢀlevel
•ꢀQualifiedꢀaccordingꢀtoꢀJEDEC
1)
ꢀꢀforꢀtargetꢀapplications
•ꢀPb-freeꢀleadꢀꢀplating;ꢀRoHSꢀcompliant
•ꢀHalogen-freeꢀaccordingꢀtoꢀIEC61249-2-21
•ꢀHigherꢀsolderꢀjointꢀreliabilityꢀdueꢀtoꢀenlargedꢀsourceꢀinterconnection
4
3
2
1
S 1
S 2
S 3
G 4
8 D
7 D
Tableꢀ1ꢀꢀꢀꢀꢀKeyꢀPerformanceꢀParameters
Parameter
Value
Unit
6 D
5 D
V
DS
40
V
R
DS(on),max
I
D
1.0
281
84
m
Ω
A
Q
oss
nC
nC
Q
g
(0V..10V)
95
Typeꢀ/ꢀOrderingꢀCode
Package
Marking
RelatedꢀLinks
BSC010N04LS
TDSON-8 FL
010N04LS
–
1)
J-STD20 and JESD22
Final Data Sheet
1
Rev.ꢀ2.4,ꢀꢀ2020-03-13
OptiMOS
TM
ꢀPower-MOSFET,ꢀ40ꢀV
BSC010N04LS
TableꢀofꢀContents
Description .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Maximum ratings
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
3
Thermal characteristics
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
4
Electrical characteristics diagrams
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
6
Package Outlines
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
10
Revision History
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
13
Trademarks .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
13
Disclaimer .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
13
Final Data Sheet
2
Rev.ꢀ2.4,ꢀꢀ2020-03-13
OptiMOS
TM
ꢀPower-MOSFET,ꢀ40ꢀV
BSC010N04LS
1ꢀꢀꢀꢀꢀMaximumꢀratings
atꢀ
T
j
=25ꢀ°C,ꢀunlessꢀotherwiseꢀspecified
Tableꢀ2ꢀꢀꢀꢀꢀMaximumꢀratings
Values
Typ.
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
–
–
–
–
–
–
–
–
–
–
281
178
247
156
38
V
GS
=10ꢀV,ꢀ
T
C
=25ꢀ°C
V
GS
=10ꢀV,ꢀ
T
C
=100ꢀ°C
V
GS
=4.5ꢀV,ꢀ
T
C
=25ꢀ°C
Continuous drain current
1)
I
D
A
V
GS
=4.5ꢀV,ꢀ
T
C
=100ꢀ°C
V
GS
=10ꢀV,ꢀ
T
A
=25ꢀ°C,ꢀ
R
thJA
=50ꢀK/W
2)
Pulsed drain current
3)
I
D,pulse
I
AS
–
–
–
–
–
1124
50
A
T
C
=25ꢀ°C
Avalanche current, single pulse
4)
Avalanche energy, single pulse
Gate source voltage
–
A
T
C
=25ꢀ°C
E
AS
V
GS
–
330
20
mJ
V
I
D
=50ꢀA,ꢀ
R
GS
=25ꢀ
Ω
-20
–
–
–
–
–
139
2.5
T
C
=25ꢀ°C
Power dissipation
P
tot
W
T
A
=25ꢀ°C,ꢀ
R
thJA
=50ꢀK/W
2)
IEC climatic category;
DIN IEC 68-1: 55/150/56
Operating and storage temperature
T
j
,ꢀ
T
stg
-55
–
150
°C
2ꢀꢀꢀꢀꢀThermalꢀcharacteristics
Tableꢀ3ꢀꢀꢀꢀꢀThermalꢀcharacteristics
Values
Typ.
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Thermal resistance, junction – case,
bottom
R
thJC
R
thJC
R
thJA
–
0.5
0.9
K/W
K/W
K/W
–
–
–
Thermal resistance, junction – case,
top
–
–
–
–
20
50
Device on PCB,
6 cm
2
cooling area
2)
1)
Rating refers to the product only with datasheet specified absolute maximum values, maintaining case temperature
at 25°C. For higher case temperature please refer to Diagram 2. De-rating will be required based on the actual
environmental conditions.
2)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm
2
(one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
3)
See figure 3 for more detailed information
4)
See figure 13 for more detailed information
Final Data Sheet
3
Rev.ꢀ2.4,ꢀꢀ2020-03-13
OptiMOS
TM
ꢀPower-MOSFET,ꢀ40ꢀV
BSC010N04LS
3ꢀꢀꢀꢀꢀElectricalꢀcharacteristics
atꢀ
T
j
=25ꢀ°C,ꢀunlessꢀotherwiseꢀspecified
Tableꢀ4ꢀꢀꢀꢀꢀStaticꢀcharacteristics
Values
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
40
Typ.
Max.
Drain-source breakdown voltage
Gate threshold voltage
V
(BR)DSS
V
GS(th)
–
–
–
V
V
V
GS
=0ꢀV,ꢀ
I
D
=1ꢀmA
1.2
2
V
DS
=
V
GS
,ꢀ
I
D
=250ꢀµA
–
–
0.1
10
1
100
V
DS
=40ꢀV,ꢀ
V
GS
=0ꢀV,ꢀ
T
j
=25ꢀ°C
V
DS
=40ꢀV,ꢀ
V
GS
=0ꢀV,ꢀ
T
j
=125ꢀ°C
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
I
DSS
µA
nA
I
GSS
–
10
100
V
GS
=20ꢀV,ꢀ
V
DS
=0ꢀV
–
–
1.0
0.85
1.3
1.0
V
GS
=4.5ꢀV,ꢀ
I
D
=50ꢀA
V
GS
=10ꢀV,ꢀ
I
D
=50ꢀA
R
DS(on)
m
Ω
Gate resistance
1)
Transconductance
R
G
g
fs
–
0.8
1.6
–
Ω
–
140
270
S
|
V
DS
|>2|
I
D
|
R
DS(on)max
,ꢀ
I
D
=50ꢀA
Tableꢀ5ꢀꢀꢀꢀꢀDynamicꢀcharacteristics
Values
Typ.
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Input capacitance
1)
Output capacitance
1)
Reverse transfer capacitance
1)
C
iss
C
oss
C
rss
–
–
–
6800 9520 pF
1900 2660 pF
V
GS
=0ꢀV,ꢀ
V
DS
=20ꢀV,ꢀ
f
=1ꢀMHz
V
GS
=0ꢀV,ꢀ
V
DS
=20ꢀV,ꢀ
f
=1ꢀMHz
V
GS
=0ꢀV,ꢀ
V
DS
=20ꢀV,ꢀ
f
=1ꢀMHz
160
10
320
–
pF
ns
V
DD
=20ꢀV,ꢀ
V
GS
=10ꢀV,ꢀ
I
D
=30ꢀA,
R
G,ext
,ext=1.6ꢀ
Ω
Turn-on delay time
Rise time
t
d(on)
t
r
t
d(off)
t
f
–
–
–
–
V
DD
=20ꢀV,ꢀ
V
GS
=10ꢀV,ꢀ
I
D
=30ꢀA,
R
G,ext
,ext=1.6ꢀ
Ω
12
46
9
–
–
–
ns
ns
ns
V
DD
=20ꢀV,ꢀ
V
GS
=10ꢀV,ꢀ
I
D
=30ꢀA,
R
G,ext
,ext=1.6ꢀ
Ω
Turn-off delay time
Fall time
V
DD
=20ꢀV,ꢀ
V
GS
=10ꢀV,ꢀ
I
D
=30ꢀA,
R
G,ext
,ext=1.6ꢀ
Ω
Tableꢀ6ꢀꢀꢀꢀꢀGateꢀchargeꢀcharacteristics
2)
ꢀ
Values
Typ.
16
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Gate to source charge
Gate charge at threshold
Gate to drain charge
1)
Switching charge
Q
gs
–
–
–
–
–
–
–
–
–
–
nC
nC
nC
nC
nC
V
V
DD
=20ꢀV,ꢀ
I
D
=50ꢀA,ꢀ
V
GS
=0ꢀtoꢀ10ꢀV
V
DD
=20ꢀV,ꢀ
I
D
=50ꢀA,ꢀ
V
GS
=0ꢀtoꢀ10ꢀV
V
DD
=20ꢀV,ꢀ
I
D
=50ꢀA,ꢀ
V
GS
=0ꢀtoꢀ10ꢀV
V
DD
=20ꢀV,ꢀ
I
D
=50ꢀA,ꢀ
V
GS
=0ꢀtoꢀ10ꢀV
V
DD
=20ꢀV,ꢀ
I
D
=50ꢀA,ꢀ
V
GS
=0ꢀtoꢀ10ꢀV
V
DD
=20ꢀV,ꢀ
I
D
=50ꢀA,ꢀ
V
GS
=0ꢀtoꢀ10ꢀV
V
DD
=20ꢀV,ꢀ
I
D
=50ꢀA,ꢀ
V
GS
=0ꢀtoꢀ4.5ꢀV
V
DS
=0.1ꢀV,ꢀ
V
GS
=0ꢀtoꢀ10ꢀV
Q
g(th)
Q
gd
11
–
15
21
–
Q
sw
21
Gate charge total
1)
Q
g
95
133
–
Gate plateau voltage
Gate charge total
1)
V
plateau
Q
g
2.4
49
69
–
nC
nC
nC
Gate charge total, sync. FET
Output charge
1)
Q
g(sync)
Q
oss
84
84
118
V
DD
=20ꢀV,ꢀ
V
GS
=0ꢀV
1)
Defined by design. Not subject to production test
2)
See
″
Gate charge waveforms
″
for parameter definition
Final Data Sheet
4
Rev.ꢀ2.4,ꢀꢀ2020-03-13
OptiMOS
TM
ꢀPower-MOSFET,ꢀ40ꢀV
BSC010N04LS
Tableꢀ7ꢀꢀꢀꢀꢀReverseꢀdiode
Values
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Typ.
–
Max.
139
1124
1
Diode continuous forward current
Diode pulse current
I
S
–
–
–
–
–
A
T
C
=25ꢀ°C
I
S,pulse
V
SD
t
rr
–
A
T
C
=25ꢀ°C
Diode forward voltage
Reverse recovery time
1)
0.81
36
50
V
V
GS
=0ꢀV,ꢀ
I
F
=50ꢀA,ꢀ
T
j
=25ꢀ°C
V
R
=20ꢀV,ꢀ
I
F
=50A,ꢀd
i
F
/d
t
=400ꢀA/µs
V
R
=15ꢀV,ꢀ
I
F
=
I
S
,ꢀd
i
F
/d
t
=400ꢀA/µs
72
ns
nC
Reverse recovery charge
Q
rr
–
1)
Defined by design. Not subject to production test
Final Data Sheet
5
Rev.ꢀ2.4,ꢀꢀ2020-03-13
OptiMOS
TM
ꢀPower-MOSFET,ꢀ40ꢀV
BSC010N04LS
4ꢀꢀꢀꢀꢀElectricalꢀcharacteristicsꢀdiagrams
Diagramꢀ1:ꢀPowerꢀdissipation
Diagramꢀ2:ꢀDrainꢀcurrent
160
300
140
120
100
80
250
200
150
100
50
60
40
20
0
0
0
40
80
120
160
0
20
40
60
80
100
120
140
160
T
C
ꢀ[°C]
T
C
ꢀ[°C]
P
tot
=f(
T
C
)
I
D
=f(
T
C
);ꢀ
V
GS
≥
10ꢀV
Diagramꢀ3:ꢀSafeꢀoperatingꢀarea
Diagramꢀ4:ꢀMax.ꢀtransientꢀthermalꢀimpedance
10
4
10
1
10
3
10
2
10
1
10
0
10
-1
10
-2
10
0
1 µs
10 µs
100 µs
1 ms
10 ms
DC
0.5
0.2
10
-1
0.1
0.05
0.02
0.01
10
-2
single pulse
10
-3
10
-1
10
0
10
1
10
2
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
V
DS
ꢀ[V]
t
p
ꢀ[s]
I
D
=f(
V
DS
);ꢀ
T
C
=25ꢀ°C;ꢀ
D
=0;ꢀparameter:ꢀ
t
p
Z
thJC
=f(
t
p
);ꢀparameter:ꢀ
D
=
t
p
/
T
Final Data Sheet
6
Rev.ꢀ2.4,ꢀꢀ2020-03-13
OptiMOS
TM
ꢀPower-MOSFET,ꢀ40ꢀV
BSC010N04LS
Diagramꢀ5:ꢀTyp.ꢀoutputꢀcharacteristics
Diagramꢀ6:ꢀTyp.ꢀdrain-sourceꢀonꢀresistance
400
4.5 V
4 V
1.5
3.2 V
350
5 V
3.5 V
3.5 V
4 V
3.2 V
3 V
10 V
300
250
200
150
100
50
4.5 V
1.0
5 V
7 V
8 V
10 V
2.8 V
0.5
0
0.0
0
1
2
0
20
40
60
80
100
V
DS
ꢀ[V]
I
D
ꢀ[A]
I
D
=f(
V
DS
);ꢀ
T
j
=25ꢀ°C;ꢀparameter:ꢀ
V
GS
R
DS(on)
=f(
I
D
);ꢀ
T
j
=25ꢀ°C;ꢀparameter:ꢀ
V
GS
Diagramꢀ7:ꢀTyp.ꢀtransferꢀcharacteristics
Diagramꢀ8:ꢀTyp.ꢀforwardꢀtransconductance
400
400
320
240
160
320
240
160
80
25 °C
150 °C
80
0
0
0
1
2
3
4
5
0
20
40
60
80
100
V
GS
ꢀ[V]
I
D
ꢀ[A]
I
D
=f(
V
GS
);ꢀ|
V
DS
|>2|
I
D
|
R
DS(on)max
;ꢀparameter:ꢀ
T
j
g
fs
=f(
I
D
);ꢀ
T
j
=25ꢀ°C
Final Data Sheet
7
Rev.ꢀ2.4,ꢀꢀ2020-03-13
OptiMOS
TM
ꢀPower-MOSFET,ꢀ40ꢀV
BSC010N04LS
Diagramꢀ9:ꢀDrain-sourceꢀon-stateꢀresistance
Diagramꢀ10:ꢀTyp.ꢀgateꢀthresholdꢀvoltage
2.00
2.5
1.80
1.60
1.40
1.20
2.0
1.5
1.0
0.5
0.0
max
1.00
typ
0.80
0.60
0.40
0.20
0.00
-60
-20
20
60
100
140
180
-60
-20
20
60
100
140
180
T
j
ꢀ[°C]
T
j
ꢀ[°C]
R
DS(on)
=f(
T
j
);ꢀ
I
D
=50ꢀA;ꢀ
V
GS
=10ꢀV
V
GS(th)
=f(
T
j
);ꢀ
V
GS
=
V
DS
;ꢀ
I
D
=250ꢀµA
Diagramꢀ11:ꢀTyp.ꢀcapacitances
Diagramꢀ12:ꢀForwardꢀcharacteristicsꢀofꢀreverseꢀdiode
10
4
10
4
Ciss
25 °C
25 °C, max
150 °C
150 °C, max
Coss
10
3
10
2
10
1
10
3
10
2
10
1
Crss
0
10
20
30
40
0.00
0.25
0.50
0.75
1.00
1.25
1.50
V
DS
ꢀ[V]
V
SD
ꢀ[V]
C
=f(
V
DS
);ꢀ
V
GS
=0ꢀV;ꢀ
f
=1ꢀMHz
I
F
=f(
V
SD
);ꢀparameter:ꢀ
T
j
Final Data Sheet
8
Rev.ꢀ2.4,ꢀꢀ2020-03-13
OptiMOS
TM
ꢀPower-MOSFET,ꢀ40ꢀV
BSC010N04LS
Diagramꢀ13:ꢀAvalancheꢀcharacteristics
Diagramꢀ14:ꢀTyp.ꢀgateꢀcharge
10
2
12
20 V
32 V
10
8
8 V
25 °C
100 °C
125 °C
10
1
6
4
2
10
0
0
10
0
10
1
10
2
10
3
0
20
40
60
80
100
t
AV
ꢀ[µs]
Q
gate
ꢀ[nC]
I
AS
=f(
t
AV
);ꢀ
R
GS
=25ꢀ
Ω
;ꢀparameter:ꢀ
T
j(start)
V
GS
=f(
Q
gate
);ꢀ
I
D
=50ꢀAꢀpulsed;ꢀparameter:ꢀ
V
DD
Diagramꢀ15:ꢀDrain-sourceꢀbreakdownꢀvoltage
Diagram Gate charge waveforms
46
44
42
40
38
36
34
32
30
-60
-20
20
60
100
140
180
T
j
ꢀ[°C]
V
BR(DSS)
=f(
T
j
);ꢀ
I
D
=1ꢀmA
Final Data Sheet
9
Rev.ꢀ2.4,ꢀꢀ2020-03-13
OptiMOS
TM
ꢀPower-MOSFET,ꢀ40ꢀV
BSC010N04LS
5ꢀꢀꢀꢀꢀPackageꢀOutlines
DOCUMENT NO.
Z8B000193699
REVISION
03
MILLIMETERS
DIMENSION
MIN.
0.90
0.15
0.26
4.80
3.70
0.02
5.70
5.90
3.88
MAX.
1.20
0.35
0.54
5.35
4.40
0.23
6.10
6.42
4.42
SCALE 10:1
A
A1
b
3mm
0
1
2
D
D1
D2
E
EUROPEAN PROJECTION
E1
E2
e
1.27
L
0.69
0.45
0.90
0.69
ISSUE DATE
19.06.2019
M
Figureꢀ1ꢀꢀꢀꢀꢀOutlineꢀTDSON-8ꢀFL,ꢀdimensionsꢀinꢀmm
Final Data Sheet
10
Rev.ꢀ2.4,ꢀꢀ2020-03-13
OptiMOS
TM
ꢀPower-MOSFET,ꢀ40ꢀV
BSC010N04LS
PG-TDSON-8
FL
: Recommen
de
d Bo
a
rdpads & Apertures
Figure 2
Outline Boardpads (TDSON-8 FL)
Final Data Sheet
11
Rev.ꢀ2.4,ꢀꢀ2020-03-13
OptiMO
S
TM
Power-MOSFET , 40 V
BSC010N04LS
Figure 3
Outline Tape (TDSON-8 FL )
Final Data Sheet
12
Rev. 2.4,
2020-03-13
OptiMO
S
TM
Power-MOSFET , 40 V
BSC010N04LS
Revision History
BSC010N04LS
Revision: 2020-03-13, Rev. 2.4
Previous Revision
Revision Date
Subjects (major changes since last revision)
2.2
2.3
2.4
Rev. 2.2
2014-06-27
2019-09-27
2020-03-13
Update package drawings
Update current rating
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Final Data Sheet
13
Rev. 2.4,
2020-03-13
