Infineon-Technologies-BSC010N04LSC
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BSC010N04LSCꢀ(UL2595)
MOSFET
OptiMOS
TM
5ꢀPower-Transistor,ꢀ40V
SuperSO8
Features
•ꢀ
UL-2595ꢀstandard
1)
ꢀꢀcompliantꢀwithꢀincreasedꢀcreepageꢀdistance
•ꢀDrainꢀtoꢀsourceꢀdistanceꢀincreasedꢀtoꢀmin.ꢀ1.5mm
•ꢀVeryꢀlowꢀon-resistanceꢀ
R
DS(on)
•ꢀ100%ꢀavalancheꢀtested
•ꢀSuperiorꢀthermalꢀresistance
•ꢀN-channel
•ꢀQualifiedꢀaccordingꢀtoꢀJEDEC
2)
ꢀꢀforꢀtargetꢀapplications
•ꢀPb-freeꢀleadꢀplating;ꢀRoHSꢀcompliant
•ꢀHalogen-freeꢀaccordingꢀtoꢀIEC61249-2-21
S 1
8 D
7 D
Tableꢀ1ꢀꢀꢀꢀꢀKeyꢀPerformanceꢀParameters
S 2
S 3
G 4
Parameter
Value
Unit
6 D
5 D
V
DS
40
V
R
DS(on),max
I
D
1.05
282
84
m
Ω
A
Q
oss
nC
nC
Q
G
(0V..10V)
95
Typeꢀ/ꢀOrderingꢀCode
Package
Marking
RelatedꢀLinks
BSC010N04LSC (UL2595)
PG-TDSON-8
10N04LSC
–
1)
UL-2595 standard: General Requirements for Battery-Powered Appliances:
BSC010N04LS.
2)
J-STD20 and JESD22
Final Data Sheet
1
Rev.ꢀ2.3,ꢀꢀ2020-04-16
OptiMOS
TM
5ꢀPower-Transistor,ꢀ40V
BSC010N04LSCꢀ(UL2595)
TableꢀofꢀContents
Description .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Maximum ratings
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
3
Thermal characteristics
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
4
Electrical characteristics diagrams
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
6
Package Outlines
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
10
Revision History
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
12
Trademarks .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
12
Disclaimer .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
12
Final Data Sheet
2
Rev.ꢀ2.3,ꢀꢀ2020-04-16
OptiMOS
TM
5ꢀPower-Transistor,ꢀ40V
BSC010N04LSCꢀ(UL2595)
1ꢀꢀꢀꢀꢀMaximumꢀratings
atꢀ
T
A
=25ꢀ°C,ꢀunlessꢀotherwiseꢀspecified
Tableꢀ2ꢀꢀꢀꢀꢀMaximumꢀratings
Values
Typ.
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
V
GS
=10ꢀV,ꢀ
T
C
=25ꢀ°C
V
GS
=10ꢀV,ꢀ
T
C
=100ꢀ°C
V
GS
=4.5ꢀV,ꢀ
T
C
=25ꢀ°C
–
–
–
–
–
–
–
–
–
–
282
178
248
157
39
Continuous drain current
1)
I
D
A
V
GS
=4.5ꢀV,ꢀ
T
C
=100ꢀ°C
V
GS
=10ꢀV,ꢀ
T
A
=25ꢀ°C,
R
THJA
=50ꢀ°C/W
2)
Pulsed drain current
3)
Avalanche energy, single pulse
4)
I
D,pulse
E
AS
–
–
–
–
1128
330
20
A
T
A
=25ꢀ°C
–
mJ
V
I
D
=50ꢀA,ꢀ
R
GS
=25ꢀ
Ω
Gate source voltage
V
GS
-20
–
–
–
–
–
139
2.5
T
C
=25ꢀ°C
Power dissipation
P
tot
W
T
A
=25ꢀ°C,ꢀ
R
THJA
=50ꢀ°C/W
2)
IEC climatic category; DIN IEC 68-1:
55/150/56
Operating and storage temperature
T
j
,ꢀ
T
stg
-55
–
150
°C
2ꢀꢀꢀꢀꢀThermalꢀcharacteristics
Tableꢀ3ꢀꢀꢀꢀꢀThermalꢀcharacteristics
Values
Typ.
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Thermal resistance, junction – case,
bottom
R
thJC
R
thJC
R
thJA
–
0.5
0.9
°C/W –
°C/W –
°C/W –
Thermal resistance, junction – case,
top
–
–
–
–
20
50
Device on PCB,
6 cm² cooling area
2)
1)
Rating refers to the product only with datasheet specified absolute maximum values, maintaining case temperature
at 25°C. For higher case temperature please refer to Diagram 2. De-rating will be required based on the actual
environmental conditions.
2)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm
2
(one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
3)
See Diagram 3 for more detailed information
4)
See Diagram 13 for more detailed information
Final Data Sheet
3
Rev.ꢀ2.3,ꢀꢀ2020-04-16
OptiMOS
TM
5ꢀPower-Transistor,ꢀ40V
BSC010N04LSCꢀ(UL2595)
3ꢀꢀꢀꢀꢀElectricalꢀcharacteristics
atꢀ
T
j
=25ꢀ°C,ꢀunlessꢀotherwiseꢀspecified
Tableꢀ4ꢀꢀꢀꢀꢀStaticꢀcharacteristics
Values
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
40
Typ.
Max.
Drain-source breakdown voltage
Gate threshold voltage
V
(BR)DSS
V
GS(th)
–
–
–
V
V
V
GS
=0ꢀV,ꢀ
I
D
=1ꢀmA
1.2
2
V
DS
=
V
GS
,ꢀ
I
D
=250ꢀµA
–
–
0.1
10
1
100
V
DS
=40ꢀV,ꢀ
V
GS
=0ꢀV,ꢀ
T
j
=25ꢀ°C
V
DS
=40ꢀV,ꢀ
V
GS
=0ꢀV,ꢀ
T
j
=125ꢀ°C
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
I
DSS
µA
nA
I
GSS
–
10
100
V
GS
=20ꢀV,ꢀ
V
DS
=0ꢀV
–
–
0.90
1.05
1.05
1.35
V
GS
=10ꢀV,ꢀ
I
D
=50ꢀA
V
GS
=4.5ꢀV,ꢀ
I
D
=50ꢀA
R
DS(on)
m
Ω
Gate resistance
R
G
g
fs
–
0.8
1.6
–
Ω
–
Transconductance
140
270
S
|
V
DS
|
≥
2|
I
D
|
R
DS(on)max
,ꢀ
I
D
=50ꢀA
Tableꢀ5ꢀꢀꢀꢀꢀDynamicꢀcharacteristics
Values
Typ.
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Input capacitance
1)
Output capacitance
1)
Reverse transfer capacitance
1)
C
iss
C
oss
C
rss
–
–
–
6800 9500 pF
1900 2700 pF
V
GS
=0ꢀV,ꢀ
V
DS
=20ꢀV,ꢀ
f
=1ꢀMHz
V
GS
=0ꢀV,ꢀ
V
DS
=20ꢀV,ꢀ
f
=1ꢀMHz
V
GS
=0ꢀV,ꢀ
V
DS
=20ꢀV,ꢀ
f
=1ꢀMHz
160
10
320
–
pF
ns
V
DD
=20ꢀV,ꢀ
V
GS
=10ꢀV,ꢀ
I
D
=20ꢀA,
R
G,ext
=1.6ꢀ
Ω
Turn-on delay time
Rise time
t
d(on)
t
r
t
d(off)
t
f
–
–
–
–
V
DD
=20ꢀV,ꢀ
V
GS
=10ꢀV,ꢀ
I
D
=20ꢀA,
R
G,ext
=1.6ꢀ
Ω
12
46
9
–
–
–
ns
ns
ns
V
DD
=20ꢀV,ꢀ
V
GS
=10ꢀV,ꢀ
I
D
=20ꢀA,
R
G,ext
=1.6ꢀ
Ω
Turn-off delay time
Fall time
V
DD
=20ꢀV,ꢀ
V
GS
=10ꢀV,ꢀ
I
D
=20ꢀA,
R
G,ext
=1.6ꢀ
Ω
Tableꢀ6ꢀꢀꢀꢀꢀGateꢀchargeꢀcharacteristics
2)
ꢀ
Values
Typ.
16
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Gate to source charge
Gate charge at threshold
Gate to drain charge
1)
Switching charge
Q
gs
–
–
–
–
–
–
–
–
–
–
nC
nC
nC
nC
nC
V
V
DD
=20ꢀV,ꢀ
I
D
=50ꢀA,ꢀ
V
GS
=0ꢀtoꢀ10ꢀV
V
DD
=20ꢀV,ꢀ
I
D
=50ꢀA,ꢀ
V
GS
=0ꢀtoꢀ10ꢀV
V
DD
=20ꢀV,ꢀ
I
D
=50ꢀA,ꢀ
V
GS
=0ꢀtoꢀ10ꢀV
V
DD
=20ꢀV,ꢀ
I
D
=50ꢀA,ꢀ
V
GS
=0ꢀtoꢀ10ꢀV
V
DD
=20ꢀV,ꢀ
I
D
=50ꢀA,ꢀ
V
GS
=0ꢀtoꢀ10ꢀV
V
DD
=20ꢀV,ꢀ
I
D
=50ꢀA,ꢀ
V
GS
=0ꢀtoꢀ10ꢀV
V
DD
=20ꢀV,ꢀ
I
D
=50ꢀA,ꢀ
V
GS
=0ꢀtoꢀ4.5ꢀV
V
DS
=0.1ꢀV,ꢀ
V
GS
=0ꢀtoꢀ4.5ꢀV
Q
g(th)
Q
gd
11
–
15
21
–
Q
sw
21
Gate charge total
1)
Q
g
95
133
–
Gate plateau voltage
Gate charge total
V
plateau
Q
g
2.4
49
69
–
nC
nC
nC
Gate charge total, sync. FET
Output charge
1)
Q
g(sync)
Q
oss
84
84
118
V
DD
=20ꢀV,ꢀ
V
GS
=0ꢀV
1)
Defined by design. Not subject to production test.
2)
See
″
Gate charge waveforms
″
for parameter definition
Final Data Sheet
4
Rev.ꢀ2.3,ꢀꢀ2020-04-16
OptiMOS
TM
5ꢀPower-Transistor,ꢀ40V
BSC010N04LSCꢀ(UL2595)
Tableꢀ7ꢀꢀꢀꢀꢀReverseꢀdiode
Values
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Typ.
–
Max.
138
1128
1
Diode continuous forward current
Diode pulse current
I
S
–
–
–
–
–
A
T
C
=25ꢀ°C
I
S,pulse
V
SD
t
rr
–
A
T
C
=25ꢀ°C
Diode forward voltage
0.81
36
50
V
V
GS
=0ꢀV,ꢀ
I
F
=50ꢀA,ꢀ
T
j
=25ꢀ°C
V
R
=20ꢀV,ꢀ
I
F
=10ꢀA,ꢀd
i
F
/d
t
=400ꢀA/µs
V
R
=20ꢀV,ꢀ
I
F
=10ꢀA,ꢀd
i
F
/d
t
=400ꢀA/µs
Reverse recovery time
1)
Reverse recovery charge
1)
72
ns
nC
Q
rr
–
1)
Defined by design. Not subject to production test.
Final Data Sheet
5
Rev.ꢀ2.3,ꢀꢀ2020-04-16
OptiMOS
TM
5ꢀPower-Transistor,ꢀ40V
BSC010N04LSCꢀ(UL2595)
4ꢀꢀꢀꢀꢀElectricalꢀcharacteristicsꢀdiagrams
Diagramꢀ1:ꢀPowerꢀdissipation
Diagramꢀ2:ꢀDrainꢀcurrent
150
300
125
100
75
50
25
0
250
200
150
100
50
0
0
20
40
60
80
100
120
140
160
0
20
40
60
80
100
120
140
160
T
C
ꢀ[°C]
T
C
ꢀ[°C]
P
tot
=f(
T
C
)
I
D
=f(
T
C
);ꢀ
V
GS
≥
10ꢀV
Diagramꢀ3:ꢀSafeꢀoperatingꢀarea
Diagramꢀ4:ꢀMax.ꢀtransientꢀthermalꢀimpedance
10
4
10
1
single pulse
0.01
0.02
0.05
0.1
0.2
10
3
10
2
1 µs
10 µs
0.5
10
0
10
-1
10
-2
100 µs
DC
1 ms
10
1
10
0
10
-1
10
-2
10 ms
10
-1
10
0
10
1
10
2
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
V
DS
ꢀ[V]
t
p
ꢀ[s]
I
D
=f(
V
DS
);ꢀ
T
C
=25ꢀ°C;ꢀ
D
=0;ꢀparameter:ꢀ
t
p
Z
thJC
=f(
t
p
);ꢀparameter:ꢀ
D
=
t
p
/
T
Final Data Sheet
6
Rev.ꢀ2.3,ꢀꢀ2020-04-16
OptiMOS
TM
5ꢀPower-Transistor,ꢀ40V
BSC010N04LSCꢀ(UL2595)
Diagramꢀ5:ꢀTyp.ꢀoutputꢀcharacteristics
Diagramꢀ6:ꢀTyp.ꢀdrain-sourceꢀonꢀresistance
400
1.6
3 V
350
300
250
200
150
100
50
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
10 V
3.5 V
3.5 V
4.5 V
10 V
3 V
4.5 V
4 V
5 V
2.8 V
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0
25
50
75
100
125
150
175
200
V
DS
ꢀ[V]
I
D
ꢀ[A]
I
D
=f(
V
DS
),ꢀ
T
j
=25ꢀ°C;ꢀparameter:ꢀ
V
GS
R
DS(on)
=f(
I
D
),ꢀ
T
j
=25ꢀ°C;ꢀparameter:ꢀ
V
GS
Diagramꢀ7:ꢀTyp.ꢀtransferꢀcharacteristics
Diagramꢀ8:ꢀTyp.ꢀdrain-sourceꢀonꢀresistance
400
2.8
350
300
250
200
150
100
2.4
2.0
1.6
1.2
0.8
0.4
0.0
150 °C
25 °C
50
150 °C
25 °C
0
0
1
2
3
4
5
0
2
4
6
8
10
V
GS
ꢀ[V]
V
GS
ꢀ[V]
I
D
=f(
V
GS
),ꢀ|
V
DS
|>2|
I
D
|
R
DS(on)max
;ꢀparameter:ꢀ
T
j
R
DS(on)
=f(
V
GS
),ꢀ
I
D
=50ꢀA;ꢀparameter:ꢀ
T
j
Final Data Sheet
7
Rev.ꢀ2.3,ꢀꢀ2020-04-16
OptiMOS
TM
5ꢀPower-Transistor,ꢀ40V
BSC010N04LSCꢀ(UL2595)
Diagramꢀ9:ꢀNormalizedꢀdrain-sourceꢀonꢀresistance
Diagramꢀ10:ꢀTyp.ꢀgateꢀthresholdꢀvoltage
2.0
2.0
1.6
1.2
0.8
0.4
0.0
1.6
1.2
0.8
0.4
0.0
2500 µA
250 µA
-80
-40
0
40
80
120
160
-80
-40
0
40
80
120
160
T
j
ꢀ[°C]
T
j
ꢀ[°C]
R
DS(on)
=f(
T
j
),ꢀ
I
D
=50ꢀA,ꢀ
V
GS
=10ꢀV
V
GS(th
=f(
T
j
),ꢀ
V
GS
=
V
DS
;ꢀparameter:ꢀ
I
D
Diagramꢀ11:ꢀTyp.ꢀcapacitances
Diagramꢀ12:ꢀForwardꢀcharacteristicsꢀofꢀreverseꢀdiode
10
4
10
4
25 °C
25 °C, max
150 °C
Ciss
150 °C, max
10
3
10
2
10
1
10
0
10
3
10
2
10
1
Coss
Crss
0
5
10
15
20
25
30
35
40
0.00
0.25
0.50
0.75
1.00
1.25
1.50
V
DS
ꢀ[V]
V
SD
ꢀ[V]
C
=f(
V
DS
);ꢀ
V
GS
=0ꢀV;ꢀ
f
=1ꢀMHz
I
F
=f(
V
SD
);ꢀparameter:ꢀ
T
j
Final Data Sheet
8
Rev.ꢀ2.3,ꢀꢀ2020-04-16
OptiMOS
TM
5ꢀPower-Transistor,ꢀ40V
BSC010N04LSCꢀ(UL2595)
Diagramꢀ13:ꢀAvalancheꢀcharacteristics
Diagramꢀ14:ꢀTyp.ꢀgateꢀcharge
10
2
10
8 V
20 V
32 V
8
6
4
2
0
25 °C
100 °C
10
1
125 °C
10
0
10
0
10
1
10
2
10
3
0
20
40
60
80
100
t
AV
ꢀ[µs]
Q
gate
ꢀ[nC]
I
AS
=f(
t
AV
);ꢀ
R
GS
=25ꢀ
Ω
;ꢀparameter:ꢀ
T
j,start
V
GS
=f(
Q
gate
),ꢀ
I
D
=50ꢀAꢀpulsed,ꢀ
T
j
=25ꢀ°C;ꢀparameter:ꢀ
V
DD
Diagramꢀ15:ꢀDrain-sourceꢀbreakdownꢀvoltage
Diagram Gate charge waveforms
45
44
43
42
41
40
39
38
37
-80
-40
0
40
80
120
160
T
j
ꢀ[°C]
V
BR(DSS)
=f(
T
j
);ꢀ
I
D
=1ꢀmA
Final Data Sheet
9
Rev.ꢀ2.3,ꢀꢀ2020-04-16
OptiMOS
TM
5ꢀPower-Transistor,ꢀ40V
BSC010N04LSCꢀ(UL2595)
5ꢀꢀꢀꢀꢀPackageꢀOutlines
MILLIMETERS
DIMENSIONS
MIN.
0.95
0.00
MAX.
1.05
0.05
A
A1
A3
b
0.25
0.21
0.03
0.26
0.41
0.13
0.46
DOCUMENT NO.
Z8B00185539
b1
b2
D
REVISION
01
5.15
5.00
D1
D2
E
3.70
3.15
3.90
3.35
6.15
6.00
SCALE 5:1
E1
E2
e
4mm
0
1
2
3
1.27
8
L
0.59
0.51
0.79
0.71
EUROPEAN PROJECTION
M
N
Ĭ
10
2.86
0.59
12
3.06
0.79
Q
R
aaa
ddd
eee
0.10
0.10
0.08
ISSUE DATE
24.05.2017
Figureꢀ1ꢀꢀꢀꢀꢀOutlineꢀPG-TDSON-8,ꢀdimensionsꢀinꢀmm
Final Data Sheet
10
Rev.ꢀ2.3,ꢀꢀ2020-04-16
OptiMOS
TM
5ꢀPower-Transistor,ꢀ40V
BSC010N04LSCꢀ(UL2595)
Figureꢀ2ꢀꢀꢀꢀꢀOutlineꢀBoardpadꢀ(PG-TDSON-8)
Final Data Sheet
11
Rev.ꢀ2.3,ꢀꢀ2020-04-16
OptiMOS
TM
5ꢀPower-Transistor,ꢀ40V
BSC010N04LSCꢀ(UL2595)
RevisionꢀHistory
BSC010N04LSC (UL2595)
Revision:ꢀ2020-04-16,ꢀRev.ꢀ2.3
Previous Revision
Revision Date
Subjects (major changes since last revision)
2.0
2.3
Release of final version
Update current rating
2018-08-22
2020-04-16
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intendedꢀtoꢀbeꢀimplantedꢀinꢀtheꢀhumanꢀbodyꢀorꢀtoꢀsupportꢀand/orꢀmaintainꢀandꢀsustainꢀand/orꢀprotectꢀhumanꢀlife.ꢀIfꢀtheyꢀfail,ꢀitꢀis
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Final Data Sheet
12
Rev.ꢀ2.3,ꢀꢀ2020-04-16
