Infineon-Technologies-BSC026NE2LS5
| Part # | Infineon-Technologies-BSC026NE2LS5 |
Download  | Infineon-Technologies-BSC026NE2LS5 |
MOSFET
MetalꢀOxideꢀSemiconductorꢀFieldꢀEffectꢀTransistor
OptiMOS
TM
OptiMOS
TM
5ꢀPower-MOSFET,ꢀ25ꢀV
BSC026NE2LS5
DataꢀSheet
Rev.ꢀ2.0
Final
PowerꢀManagementꢀ&ꢀMultimarket
OptiMOS
TM
5ꢀPower-MOSFET,ꢀ25ꢀV
BSC026NE2LS5
SuperSO8
1ꢀꢀꢀꢀꢀDescription
5
8
6
7
Features
7
6
8
5
4
•ꢀOptimizedꢀforꢀhighꢀperformanceꢀbuckꢀconverters
•ꢀVeryꢀlowꢀon-resistanceꢀ
R
DS(on)
ꢀ@ꢀ
V
GS
=4.5ꢀV
•ꢀ100%ꢀavalancheꢀtested
•ꢀSuperiorꢀthermalꢀresistance
•ꢀN-channel
1
3
•ꢀQualifiedꢀaccordingꢀtoꢀJEDEC
1)
ꢀꢀforꢀtargetꢀapplications
•ꢀPb-freeꢀleadꢀplating;ꢀRoHSꢀcompliant
•ꢀHalogen-freeꢀaccordingꢀtoꢀIEC61249-2-21
2
2
3
1
4
Tableꢀ1ꢀꢀꢀꢀꢀKeyꢀPerformanceꢀParameters
S 1
8 D
7 D
Parameter
Value
Unit
S 2
S 3
G 4
V
DS
25
V
6 D
5 D
R
DS(on),max
I
D
2.6
82
m
Ω
A
Q
OSS
7.6
5.6
nC
nC
Q
G
(0V..4.5V)
Typeꢀ/ꢀOrderingꢀCode
Package
Marking
RelatedꢀLinks
BSC026NE2LS5
PG-TDSON-8
26NE2LS5
–
1)
J-STD20 and JESD22
Final Data Sheet
2
Rev.ꢀ2.0,ꢀꢀ2015-03-10
OptiMOS
TM
5ꢀPower-MOSFET,ꢀ25ꢀV
BSC026NE2LS5
TableꢀofꢀContents
Description .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Maximum ratings
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
4
Thermal characteristics
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
5
Electrical characteristics diagrams
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
7
Package Outlines
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
11
Revision History
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
13
Disclaimer .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
13
Final Data Sheet
3
Rev.ꢀ2.0,ꢀꢀ2015-03-10
OptiMOS
TM
5ꢀPower-MOSFET,ꢀ25ꢀV
BSC026NE2LS5
2ꢀꢀꢀꢀꢀMaximumꢀratings
atꢀ
T
j
ꢀ=ꢀ25ꢀ°C,ꢀunlessꢀotherwiseꢀspecified
Tableꢀ2ꢀꢀꢀꢀꢀMaximumꢀratings
Values
Typ.
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Max.
Min.
–
–
–
–
–
–
–
–
–
–
82
52
66
42
24
V
GS
=10ꢀV,ꢀ
T
C
=25ꢀ°C
V
GS
=10ꢀV,ꢀ
T
C
=100ꢀ°C
V
GS
=4.5ꢀV,ꢀ
T
C
=25ꢀ°C
Continuous drain current
I
D
A
V
GS
=4.5ꢀV,ꢀ
T
C
=100ꢀ°C
V
GS
=10ꢀV,ꢀ
T
A
=25ꢀ°C,ꢀ
R
thJA
=50ꢀK/W
1)
Pulsed drain current
2)
I
D,pulse
I
AS
–
–
–
–
–
328
35
A
T
C
=25ꢀ°C
Avalanche current, single pulse
3)
Avalanche energy, single pulse
Gate source voltage
–
A
T
C
=25ꢀ°C
E
AS
V
GS
–
14
mJ
V
I
D
=35ꢀA,ꢀ
R
GS
=25ꢀ
Ω
-16
16
–
–
–
–
–
29
2.5
T
C
=25ꢀ°C
Power dissipation
P
tot
W
T
A
=25ꢀ°C,ꢀ
R
thJA
=50ꢀK/W
1)
IEC climatic category;
DIN IEC 68-1: 55/150/56
Operating and storage temperature
T
j
,ꢀ
T
stg
-55
–
150
°C
3ꢀꢀꢀꢀꢀThermalꢀcharacteristics
Tableꢀ3ꢀꢀꢀꢀꢀThermalꢀcharacteristics
Values
Typ.
–
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Thermal resistance, junction – case
R
thJC
R
thJC
–
4.3
K/W
K/W
–
–
Thermal resistance, junction – case,
top
–
–
–
–
20
50
Device on PCB,
R
thJA
K/W
–
6 cm
2
cooling area
1)
1)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
2)
See figure 3 for more detailed information
3)
See figure 13 for more detailed information
Final Data Sheet
4
Rev.ꢀ2.0,ꢀꢀ2015-03-10
OptiMOS
TM
5ꢀPower-MOSFET,ꢀ25ꢀV
BSC026NE2LS5
4ꢀꢀꢀꢀꢀElectricalꢀcharacteristics
Tableꢀ4ꢀꢀꢀꢀꢀStaticꢀcharacteristics
Values
Typ.
–
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Max.
Min.
25
Drain-source breakdown voltage
Gate threshold voltage
V
(BR)DSS
V
GS(th)
–
V
V
V
GS
=0ꢀV,ꢀ
I
D
=1ꢀmA
1.2
1.6
2
V
DS
=
V
GS
,ꢀ
I
D
=250ꢀµA
–
–
0.1
10
1
100
V
DS
=20ꢀV,ꢀ
V
GS
=0ꢀV,ꢀ
T
j
=25ꢀ°C
V
DS
=20ꢀV,ꢀ
V
GS
=0ꢀV,ꢀ
T
j
=125ꢀ°C
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
I
DSS
µA
nA
I
GSS
–
10
100
V
GS
=16ꢀV,ꢀ
V
DS
=0ꢀV
–
–
3.0
2.2
4.0
2.6
V
GS
=4.5ꢀV,ꢀ
I
D
=30ꢀA
V
GS
=10ꢀV,ꢀ
I
D
=30ꢀA
R
DS(on)
m
Ω
Gate resistance
R
G
g
fs
–
0.7
1.2
–
Ω
–
Transconductance
55
110
S
|
V
DS
|>2|
I
D
|
R
DS(on)max
,ꢀ
I
D
=30ꢀA
Tableꢀ5ꢀꢀꢀꢀꢀDynamicꢀcharacteristics
Values
Typ.
780
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Input capacitance
1)
Output capacitance
1)
C
iss
C
oss
C
rss
–
–
–
1100 pF
V
GS
=0ꢀV,ꢀ
V
DS
=12ꢀV,ꢀ
f
=1ꢀMHz
V
GS
=0ꢀV,ꢀ
V
DS
=12ꢀV,ꢀ
f
=1ꢀMHz
V
GS
=0ꢀV,ꢀ
V
DS
=12ꢀV,ꢀ
f
=1ꢀMHz
390
530
–
pF
pF
Reverse transfer capacitance
38
V
DD
=12ꢀV,ꢀ
V
GS
=10ꢀV,ꢀ
I
D
=30ꢀA,
R
G,ext
=1.6ꢀ
Ω
Turn-on delay time
Rise time
t
d(on)
t
r
t
d(off)
t
f
–
–
–
–
3
–
–
–
–
ns
ns
ns
ns
V
DD
=12ꢀV,ꢀ
V
GS
=10ꢀV,ꢀ
I
D
=30ꢀA,
R
G,ext
=1.6ꢀ
Ω
3
V
DD
=12ꢀV,ꢀ
V
GS
=10ꢀV,ꢀ
I
D
=30ꢀA,
R
G,ext
=1.6ꢀ
Ω
Turn-off delay time
Fall time
13
2
V
DD
=12ꢀV,ꢀ
V
GS
=10ꢀV,ꢀ
I
D
=30ꢀA,
R
G,ext
=1.6ꢀ
Ω
Tableꢀ6ꢀꢀꢀꢀꢀGateꢀchargeꢀcharacteristics
2)
ꢀ
Values
Typ.
2.0
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Gate to source charge
Gate charge at threshold
Gate to drain charge
Switching charge
Q
gs
–
–
–
–
–
–
–
–
–
–
nC
nC
nC
nC
nC
V
V
DD
=12ꢀV,ꢀ
I
D
=30ꢀA,ꢀ
V
GS
=0ꢀtoꢀ4.5ꢀV
V
DD
=12ꢀV,ꢀ
I
D
=30ꢀA,ꢀ
V
GS
=0ꢀtoꢀ4.5ꢀV
V
DD
=12ꢀV,ꢀ
I
D
=30ꢀA,ꢀ
V
GS
=0ꢀtoꢀ4.5ꢀV
V
DD
=12ꢀV,ꢀ
I
D
=30ꢀA,ꢀ
V
GS
=0ꢀtoꢀ4.5ꢀV
V
DD
=12ꢀV,ꢀ
I
D
=30ꢀA,ꢀ
V
GS
=0ꢀtoꢀ4.5ꢀV
V
DD
=12ꢀV,ꢀ
I
D
=30ꢀA,ꢀ
V
GS
=0ꢀtoꢀ4.5ꢀV
V
DD
=12ꢀV,ꢀ
I
D
=30ꢀA,ꢀ
V
GS
=0ꢀtoꢀ10ꢀV
V
DS
=0.1ꢀV,ꢀ
V
GS
=0ꢀtoꢀ4.5ꢀV
Q
g(th)
Q
gd
1.2
–
1.4
–
Q
sw
2.2
–
Gate charge total
Q
g
5.6
7.8
Gate plateau voltage
Gate charge total
V
plateau
Q
g
2.6
–
12
16
–
nC
nC
nC
Gate charge total, sync. FET
Output charge
Q
g(sync)
Q
oss
4.8
7.6
–
V
DD
=12ꢀV,ꢀ
V
GS
=0ꢀV
1)
Defined by design. Not subject to production test
2)
See
″
Gate charge waveforms
″
for parameter definition
Final Data Sheet
5
Rev.ꢀ2.0,ꢀꢀ2015-03-10
OptiMOS
TM
5ꢀPower-MOSFET,ꢀ25ꢀV
BSC026NE2LS5
Tableꢀ7ꢀꢀꢀꢀꢀReverseꢀdiode
Values
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Max.
Min.
Typ.
Diode continuous forward current
Diode pulse current
I
S
–
–
–
–
–
29
328
1
A
T
C
=25ꢀ°C
I
S,pulse
V
SD
Q
rr
–
A
T
C
=25ꢀ°C
Diode forward voltage
0.84
7
V
V
GS
=0ꢀV,ꢀ
I
F
=30ꢀA,ꢀ
T
j
=25ꢀ°C
V
R
=12ꢀV,ꢀ
I
F
=
I
S
,ꢀd
i
F
/d
t
=400ꢀA/µs
Reverse recovery charge
–
nC
Final Data Sheet
6
Rev.ꢀ2.0,ꢀꢀ2015-03-10
OptiMOS
TM
5ꢀPower-MOSFET,ꢀ25ꢀV
BSC026NE2LS5
5ꢀꢀꢀꢀꢀElectricalꢀcharacteristicsꢀdiagrams
Diagramꢀ1:ꢀPowerꢀdissipation
Diagramꢀ2:ꢀDrainꢀcurrent
35
100
80
60
40
20
0
30
25
20
15
10
5
0
0
40
80
120
160
0
40
80
120
160
T
C
ꢀ[°C]
T
C
ꢀ[°C]
P
tot
=f(
T
C
)
I
D
=f(
T
C
);ꢀ
V
GS
≥
10ꢀV
Diagramꢀ3:ꢀSafeꢀoperatingꢀarea
Diagramꢀ4:ꢀMax.ꢀtransientꢀthermalꢀimpedance
10
3
10
1
1 µs
10 µs
0.5
10
2
10
0
100 µs
0.2
0.1
10
1
0.05
0.02
1 ms
DC
10 ms
0.01
10
-1
10
0
single pulse
10
-1
10
-2
10
-1
10
0
10
1
10
2
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
V
DS
ꢀ[V]
t
p
ꢀ[s]
I
D
=f(
V
DS
);ꢀ
T
C
=25ꢀ°C;ꢀ
D
=0;ꢀparameter:ꢀ
t
p
Z
thJC
=f(
t
p
);ꢀparameter:ꢀ
D
=
t
p
/
T
Final Data Sheet
7
Rev.ꢀ2.0,ꢀꢀ2015-03-10
OptiMOS
TM
5ꢀPower-MOSFET,ꢀ25ꢀV
BSC026NE2LS5
Diagramꢀ5:ꢀTyp.ꢀoutputꢀcharacteristics
Diagramꢀ6:ꢀTyp.ꢀdrain-sourceꢀonꢀresistance
320
6
10 V
5 V
4.5 V
5
3.2 V
240
160
80
4 V
4
3
2
1
0
3.5 V
3.5 V
4 V
4.5 V
5 V
7 V
3.2 V
3 V
8 V
10 V
2.8 V
0
0
1
2
3
0
10
20
30
40
50
V
DS
ꢀ[V]
I
D
ꢀ[A]
I
D
=f(
V
DS
);ꢀ
T
j
=25ꢀ°C;ꢀparameter:ꢀ
V
GS
R
DS(on)
=f(
I
D
);ꢀ
T
j
=25ꢀ°C;ꢀparameter:ꢀ
V
GS
Diagramꢀ7:ꢀTyp.ꢀtransferꢀcharacteristics
Diagramꢀ8:ꢀTyp.ꢀforwardꢀtransconductance
320
400
350
300
250
200
150
100
50
240
160
80
150 °C
25 °C
0
0
0
1
2
3
4
5
0
80
160
240
320
V
GS
ꢀ[V]
I
D
ꢀ[A]
I
D
=f(
V
GS
);ꢀ|
V
DS
|>2|
I
D
|
R
DS(on)max
;ꢀparameter:ꢀ
T
j
g
fs
=f(
I
D
);ꢀ
T
j
=25ꢀ°C
Final Data Sheet
8
Rev.ꢀ2.0,ꢀꢀ2015-03-10
OptiMOS
TM
5ꢀPower-MOSFET,ꢀ25ꢀV
BSC026NE2LS5
Diagramꢀ9:ꢀDrain-sourceꢀon-stateꢀresistance
Diagramꢀ10:ꢀTyp.ꢀgateꢀthresholdꢀvoltage
5
2.5
4
3
2.0
250 µA
1.5
typ
2
1.0
0.5
0.0
1
0
-60
-20
20
60
100
140
180
-60
-20
20
60
100
140
180
T
j
ꢀ[°C]
T
j
ꢀ[°C]
R
DS(on)
=f(
T
j
);ꢀ
I
D
=30ꢀA;ꢀ
V
GS
=10ꢀV
V
GS(th)
=f(
T
j
);ꢀ
V
GS
=
V
DS
;ꢀ
I
D
=250ꢀµA
Diagramꢀ11:ꢀTyp.ꢀcapacitances
Diagramꢀ12:ꢀForwardꢀcharacteristicsꢀofꢀreverseꢀdiode
10
4
10
3
25 °C
150 °C
Ciss
10
3
10
2
10
1
10
0
Coss
10
2
Crss
10
1
0
5
10
15
20
25
0.0
0.5
1.0
1.5
V
DS
ꢀ[V]
V
SD
ꢀ[V]
C
=f(
V
DS
);ꢀ
V
GS
=0ꢀV;ꢀ
f
=1ꢀMHz
I
F
=f(
V
SD
);ꢀparameter:ꢀ
T
j
Final Data Sheet
9
Rev.ꢀ2.0,ꢀꢀ2015-03-10
OptiMOS
TM
5ꢀPower-MOSFET,ꢀ25ꢀV
BSC026NE2LS5
Diagramꢀ13:ꢀAvalancheꢀcharacteristics
Diagramꢀ14:ꢀTyp.ꢀgateꢀcharge
10
2
12
10
8
12 V
5 V
20 V
25 °C
10
1
100 °C
6
125 °C
10
0
4
2
10
-1
0
10
0
10
1
10
2
10
3
0
4
8
12
16
t
AV
ꢀ[µs]
Q
gate
ꢀ[nC]
I
AS
=f(
t
AV
);ꢀ
R
GS
=25ꢀ
Ω
;ꢀparameter:ꢀ
T
j(start)
V
GS
=f(
Q
gate
);ꢀ
I
D
=30ꢀAꢀpulsed;ꢀparameter:ꢀ
V
DD
Diagramꢀ15:ꢀDrain-sourceꢀbreakdownꢀvoltage
Gate charge waveforms
28
27
26
25
24
23
22
21
20
-60
-20
20
60
100
140
180
T
j
ꢀ[°C]
V
BR(DSS)
=f(
T
j
);ꢀ
I
D
=1ꢀmA
Final Data Sheet
10
Rev.ꢀ2.0,ꢀꢀ2015-03-10
OptiMOS
TM
5ꢀPower-MOSFET,ꢀ25ꢀV
BSC026NE2LS5
6ꢀꢀꢀꢀꢀPackageꢀOutlines
Figureꢀ1ꢀꢀꢀꢀꢀOutlineꢀPG-TDSON-8,ꢀdimensionsꢀinꢀmm
Final Data Sheet
11
Rev.ꢀ2.0,ꢀꢀ2015-03-10
OptiMOS
TM
5ꢀPower-MOSFET,ꢀ25ꢀV
BSC026NE2LS5
Dimension in mm
Figureꢀ2ꢀꢀꢀꢀꢀOutlineꢀTDSON-8ꢀTape
Final Data Sheet
12
Rev.ꢀ2.0,ꢀꢀ2015-03-10
OptiMOS
TM
5ꢀPower-MOSFET,ꢀ25ꢀV
BSC026NE2LS5
RevisionꢀHistory
BSC026NE2LS5
Revision:ꢀ2015-03-10,ꢀRev.ꢀ2.0
Previous Revision
Revision Date
2.0
Subjects (major changes since last revision)
Release of final version
2015-03-10
WeꢀListenꢀtoꢀYourꢀComments
Anyꢀinformationꢀwithinꢀthisꢀdocumentꢀthatꢀyouꢀfeelꢀisꢀwrong,ꢀunclearꢀorꢀmissingꢀatꢀall?ꢀYourꢀfeedbackꢀwillꢀhelpꢀusꢀtoꢀcontinuously
improveꢀtheꢀqualityꢀofꢀthisꢀdocument.ꢀPleaseꢀsendꢀyourꢀproposalꢀ(includingꢀaꢀreferenceꢀtoꢀthisꢀdocument)ꢀto:
Publishedꢀby
InfineonꢀTechnologiesꢀAG
81726ꢀMünchen,ꢀGermany
©ꢀ2015ꢀInfineonꢀTechnologiesꢀAG
AllꢀRightsꢀReserved.
LegalꢀDisclaimer
Theꢀinformationꢀgivenꢀinꢀthisꢀdocumentꢀshallꢀinꢀnoꢀeventꢀbeꢀregardedꢀasꢀaꢀguaranteeꢀofꢀconditionsꢀorꢀcharacteristics.ꢀWith
respectꢀtoꢀanyꢀexamplesꢀorꢀhintsꢀgivenꢀherein,ꢀanyꢀtypicalꢀvaluesꢀstatedꢀhereinꢀand/orꢀanyꢀinformationꢀregardingꢀtheꢀapplication
ofꢀtheꢀdevice,ꢀInfineonꢀTechnologiesꢀherebyꢀdisclaimsꢀanyꢀandꢀallꢀwarrantiesꢀandꢀliabilitiesꢀofꢀanyꢀkind,ꢀincludingꢀwithout
limitation,ꢀwarrantiesꢀofꢀnon-infringementꢀofꢀintellectualꢀpropertyꢀrightsꢀofꢀanyꢀthirdꢀparty.
Information
Forꢀfurtherꢀinformationꢀonꢀtechnology,ꢀdeliveryꢀtermsꢀandꢀconditionsꢀandꢀpricesꢀpleaseꢀcontactꢀyourꢀnearestꢀInfineon
Warnings
Dueꢀtoꢀtechnicalꢀrequirements,ꢀcomponentsꢀmayꢀcontainꢀdangerousꢀsubstances.ꢀForꢀinformationꢀonꢀtheꢀtypesꢀinꢀquestion,
pleaseꢀcontactꢀtheꢀnearestꢀInfineonꢀTechnologiesꢀOffice.
TheꢀInfineonꢀTechnologiesꢀcomponentꢀdescribedꢀinꢀthisꢀDataꢀSheetꢀmayꢀbeꢀusedꢀinꢀlife-supportꢀdevicesꢀorꢀsystemsꢀand/or
automotive,ꢀaviationꢀandꢀaerospaceꢀapplicationsꢀorꢀsystemsꢀonlyꢀwithꢀtheꢀexpressꢀwrittenꢀapprovalꢀofꢀInfineonꢀTechnologies,ꢀifꢀa
failureꢀofꢀsuchꢀcomponentsꢀcanꢀreasonablyꢀbeꢀexpectedꢀtoꢀcauseꢀtheꢀfailureꢀofꢀthatꢀlife-support,ꢀautomotive,ꢀaviationꢀand
aerospaceꢀdeviceꢀorꢀsystemꢀorꢀtoꢀaffectꢀtheꢀsafetyꢀorꢀeffectivenessꢀofꢀthatꢀdeviceꢀorꢀsystem.ꢀLifeꢀsupportꢀdevicesꢀorꢀsystemsꢀare
intendedꢀtoꢀbeꢀimplantedꢀinꢀtheꢀhumanꢀbodyꢀorꢀtoꢀsupportꢀand/orꢀmaintainꢀandꢀsustainꢀand/orꢀprotectꢀhumanꢀlife.ꢀIfꢀtheyꢀfail,ꢀitꢀis
reasonableꢀtoꢀassumeꢀthatꢀtheꢀhealthꢀofꢀtheꢀuserꢀorꢀotherꢀpersonsꢀmayꢀbeꢀendangered.
Final Data Sheet
13
Rev.ꢀ2.0,ꢀꢀ2015-03-10
