Infineon-Technologies-BSC028N06NSSC
| Part # | Infineon-Technologies-BSC028N06NSSC |
Download  | Infineon-Technologies-BSC028N06NSSC |
BSC028N06NS
MOSFET
OptiMOS
TM
ꢀPower-Transistor,ꢀ60ꢀV
SuperSO8
5
8
6
7
7
Features
6
5
8
•ꢀOptimizedꢀforꢀhighꢀperformanceꢀSMPS,ꢀe.g.ꢀsync.ꢀrec.
•ꢀ100%ꢀavalancheꢀtested
•ꢀSuperiorꢀthermalꢀresistance
•ꢀN-channel
•ꢀQualifiedꢀaccordingꢀtoꢀJEDEC
1)
ꢀꢀforꢀtargetꢀapplications
•ꢀPb-freeꢀleadꢀꢀplating;ꢀRoHSꢀcompliant
•ꢀHalogen-freeꢀaccordingꢀtoꢀIEC61249-2-21
4
3
1
2
2
3
1
4
Tableꢀ1ꢀꢀꢀꢀꢀKeyꢀPerformanceꢀParameters
S 1
8 D
7 D
Parameter
Value
Unit
S 2
S 3
G 4
V
DS
60
V
R
DS(on),max
I
D
2.8
100
43
m
Ω
A
6 D
5 D
Q
oss
nC
nC
Q
G
(0..10V)
37
Typeꢀ/ꢀOrderingꢀCode
Package
Marking
RelatedꢀLinks
BSC028N06NS
PG-TDSON-8
028N06NS
–
1)
J-STD20 and JESD22
Final Data Sheet
1
Rev.ꢀ2.4,ꢀꢀ2020-02-04
OptiMOS
TM
ꢀPower-Transistor,ꢀ60ꢀV
BSC028N06NS
TableꢀofꢀContents
Description .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Maximum ratings
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
3
Thermal characteristics
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
4
Electrical characteristics diagrams
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
6
Package Outlines
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
10
Revision History
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
13
Trademarks .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
13
Disclaimer .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
13
Final Data Sheet
2
Rev.ꢀ2.4,ꢀꢀ2020-02-04
OptiMOS
TM
ꢀPower-Transistor,ꢀ60ꢀV
BSC028N06NS
1ꢀꢀꢀꢀꢀMaximumꢀratings
atꢀ
T
j
=25ꢀ°C,ꢀunlessꢀotherwiseꢀspecified
Tableꢀ2ꢀꢀꢀꢀꢀMaximumꢀratings
Values
Typ.
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
–
–
–
–
–
–
100
83
23
V
GS
=10ꢀV,ꢀ
T
C
=25ꢀ°C
Continuous drain current
I
D
A
V
GS
=10ꢀV,ꢀ
T
C
=100ꢀ°C
V
GS
=10ꢀV,ꢀ
T
C
=25ꢀ°C,ꢀ
R
thJA
ꢀ=50K/W
1)
Pulsed drain current
2)
Avalanche energy, single pulse
3)
I
D,pulse
E
AS
–
–
–
–
400
100
20
A
T
C
=25ꢀ°C
–
mJ
V
I
D
=50ꢀA,ꢀ
R
GS
=25ꢀ
Ω
Gate source voltage
V
GS
-20
–
–
–
–
–
83
2.5
T
C
=25ꢀ°C
Power dissipation
P
tot
W
T
A
=25ꢀ°C,ꢀ
R
thJA
=50ꢀK/W
2)
IEC climatic category;
DIN IEC 68-1: 55/150/56
Operating and storage temperature
T
j
,ꢀ
T
stg
-55
–
150
°C
2ꢀꢀꢀꢀꢀThermalꢀcharacteristics
Tableꢀ3ꢀꢀꢀꢀꢀThermalꢀcharacteristics
Values
Typ.
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Thermal resistance, junction – case,
bottom
R
thJC
R
thJC
R
thJA
–
0.9
1.5
K/W
K/W
K/W
–
–
–
Thermal resistance, junction – case,
top
–
–
–
–
20
50
Device on PCB,
6 cm
2
cooling area
1)
1)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
2)
See figure 3 for more detailed information
3)
See figure 13 for more detailed information
Final Data Sheet
3
Rev.ꢀ2.4,ꢀꢀ2020-02-04
OptiMOS
TM
ꢀPower-Transistor,ꢀ60ꢀV
BSC028N06NS
3ꢀꢀꢀꢀꢀElectricalꢀcharacteristics
atꢀ
T
j
=25ꢀ°C,ꢀunlessꢀotherwiseꢀspecified
Tableꢀ4ꢀꢀꢀꢀꢀStaticꢀcharacteristics
Values
Typ.
–
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
60
Max.
–
Drain-source breakdown voltage
Gate threshold voltage
V
(BR)DSS
V
GS(th)
V
V
V
GS
=0ꢀV,ꢀ
I
D
=1ꢀmA
V
DS
=
V
GS
,ꢀ
I
D
=50ꢀµA
2.1
2.8
3.3
–
–
0.5
10
1
100
V
DS
=60ꢀV,ꢀ
V
GS
=0ꢀV,ꢀ
T
j
=25ꢀ°C
V
DS
=60ꢀV,ꢀ
V
GS
=0ꢀV,ꢀ
T
j
=125ꢀ°C
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
I
DSS
µA
nA
I
GSS
–
10
100
V
GS
=20ꢀV,ꢀ
V
DS
=0ꢀV
–
–
2.5
3.4
2.8
4.2
V
GS
=10ꢀV,ꢀ
I
D
=50ꢀA
V
GS
=6ꢀV,ꢀ
I
D
=12.5ꢀA
R
DS(on)
m
Ω
Gate resistance
1)
Transconductance
R
G
g
fs
–
1.3
1.95
–
Ω
–
50
100
S
|
V
DS
|>2|
I
D
|
R
DS(on)max
,ꢀ
I
D
=50ꢀA
Tableꢀ5ꢀꢀꢀꢀꢀDynamicꢀcharacteristics
1)
ꢀ
Values
Typ.
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Input capacitance
C
iss
C
oss
C
rss
2025 2700 3375 pF
V
GS
=0ꢀV,ꢀ
V
DS
=30ꢀV,ꢀ
f
=1ꢀMHz
V
GS
=0ꢀV,ꢀ
V
DS
=30ꢀV,ꢀ
f
=1ꢀMHz
V
GS
=0ꢀV,ꢀ
V
DS
=30ꢀV,ꢀ
f
=1ꢀMHz
Output capacitance
495
8.5
660
28
825
56
pF
pF
Reverse transfer capacitance
V
DD
=30ꢀV,ꢀ
V
GS
=10ꢀV,ꢀ
I
D
=50ꢀA,
R
G,ext
=3ꢀ
Ω
Turn-on delay time
Rise time
t
d(on)
t
r
t
d(off)
t
f
–
–
–
–
11
38
19
8
22
57
38
16
ns
ns
ns
ns
V
DD
=30ꢀV,ꢀ
V
GS
=10ꢀV,ꢀ
I
D
=50ꢀA,
R
G,ext
=3ꢀ
Ω
V
DD
=30ꢀV,ꢀ
V
GS
=10ꢀV,ꢀ
I
D
=50ꢀA,
R
G,ext
=3ꢀ
Ω
Turn-off delay time
Fall time
V
DD
=30ꢀV,ꢀ
V
GS
=10ꢀV,ꢀ
I
D
=50ꢀA,
R
G,ext
=3ꢀ
Ω
Tableꢀ6ꢀꢀꢀꢀꢀGateꢀchargeꢀcharacteristics
2)
ꢀ
Values
Typ.
12
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
9
Max.
16.5
11
Gate to source charge
Gate charge at threshold
Gate to drain charge
Switching charge
Q
gs
nC
nC
nC
nC
nC
V
V
DD
=30ꢀV,ꢀ
I
D
=50ꢀA,ꢀ
V
GS
=0ꢀtoꢀ10ꢀV
V
DD
=30ꢀV,ꢀ
I
D
=50ꢀA,ꢀ
V
GS
=0ꢀtoꢀ10ꢀV
V
DD
=30ꢀV,ꢀ
I
D
=50ꢀA,ꢀ
V
GS
=0ꢀtoꢀ10ꢀV
V
DD
=30ꢀV,ꢀ
I
D
=50ꢀA,ꢀ
V
GS
=0ꢀtoꢀ10ꢀV
V
DD
=30ꢀV,ꢀ
I
D
=50ꢀA,ꢀ
V
GS
=0ꢀtoꢀ10ꢀV
V
DD
=30ꢀV,ꢀ
I
D
=50ꢀA,ꢀ
V
GS
=0ꢀtoꢀ10ꢀV
V
DS
=0.1ꢀV,ꢀ
V
GS
=0ꢀtoꢀ10ꢀV
Q
g(th)
Q
gd
6
8
5
7
10.3
17
Q
sw
8
12
Gate charge total
Q
g
31
4.0
27
32
37
49
Gate plateau voltage
Gate charge total, sync. FET
Output charge
V
plateau
Q
g(sync)
Q
oss
4.6
33
5.2
43
nC
nC
43
54
V
DD
=30ꢀV,ꢀ
V
GS
=0ꢀV
1)
Defined by design. Not subject to production test
2)
Defined by design. Not subject to production test. See
″
Gate charge waveforms
″
for parameter definition
Final Data Sheet
4
Rev.ꢀ2.4,ꢀꢀ2020-02-04
OptiMOS
TM
ꢀPower-Transistor,ꢀ60ꢀV
BSC028N06NS
Tableꢀ7ꢀꢀꢀꢀꢀReverseꢀdiode
Values
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Typ.
–
Max.
100
400
1.2
56
Diode continuous forward current
Diode pulse current
I
S
–
A
T
C
=25ꢀ°C
I
S,pulse
V
SD
t
rr
–
–
A
T
C
=25ꢀ°C
Diode forward voltage
–
0.9
35
29
V
V
GS
=0ꢀV,ꢀ
I
F
=50ꢀA,ꢀ
T
j
=25ꢀ°C
V
R
=30ꢀV,ꢀ
I
F
=50ꢀA,ꢀd
i
F
/d
t
=100ꢀA/µs
V
R
=30ꢀV,ꢀ
I
F
=50ꢀA,ꢀd
i
F
/d
t
=100ꢀA/µs
Reverse recovery time
1)
Reverse recovery charge
1)
14
14
ns
nC
Q
rr
58
1)
Defined by design. Not subject to production test
Final Data Sheet
5
Rev.ꢀ2.4,ꢀꢀ2020-02-04
OptiMOS
TM
ꢀPower-Transistor,ꢀ60ꢀV
BSC028N06NS
4ꢀꢀꢀꢀꢀElectricalꢀcharacteristicsꢀdiagrams
Diagramꢀ1:ꢀPowerꢀdissipation
Diagramꢀ2:ꢀDrainꢀcurrent
100
120
100
80
60
40
20
0
80
60
40
20
0
0
25
50
75
100
125
150
175
0
25
50
75
100
125
150
175
T
C
ꢀ[°C]
T
C
ꢀ[°C]
P
tot
=f(
T
C
)
I
D
=f(
T
C
);ꢀ
V
GS
≥
10ꢀV
Diagramꢀ3:ꢀSafeꢀoperatingꢀarea
Diagramꢀ4:ꢀMax.ꢀtransientꢀthermalꢀimpedance
10
3
10
1
1 µs
10 µs
10
2
10
1
10
0
10
-1
10
0
0.5
100 µs
0.2
0.1
10
-1
1 ms
10 ms
DC
0.05
0.02
0.01
single pulse
10
-2
10
-3
10
-1
10
0
10
1
10
2
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
V
DS
ꢀ[V]
t
p
ꢀ[s]
I
D
=f(
V
DS
);ꢀ
T
C
=25ꢀ°C;ꢀ
D
=0;ꢀparameter:ꢀ
t
p
Z
thJC
=f(
t
p
);ꢀparameter:ꢀ
D
=
t
p
/
T
Final Data Sheet
6
Rev.ꢀ2.4,ꢀꢀ2020-02-04
OptiMOS
TM
ꢀPower-Transistor,ꢀ60ꢀV
BSC028N06NS
Diagramꢀ5:ꢀTyp.ꢀoutputꢀcharacteristics
Diagramꢀ6:ꢀTyp.ꢀdrain-sourceꢀonꢀresistance
400
8
10 V
7 V
5.5 V
6 V
360
5 V
7
6
5
4
3
2
1
0
320
280
6 V
240
200
7 V
160
5.5 V
10 V
120
80
40
0
5 V
0.0
0.5
1.0
1.5
2.0
0
50
100
150
200
250
300
350
400
V
DS
ꢀ[V]
I
D
ꢀ[A]
I
D
=f(
V
DS
);ꢀ
T
j
=25ꢀ°C;ꢀparameter:ꢀ
V
GS
R
DS(on)
=f(
I
D
);ꢀ
T
j
=25ꢀ°C;ꢀparameter:ꢀ
V
GS
Diagramꢀ7:ꢀTyp.ꢀtransferꢀcharacteristics
Diagramꢀ8:ꢀTyp.ꢀforwardꢀtransconductance
400
160
360
320
280
240
200
160
120
80
120
80
40
0
40
150 °C
25 °C
0
0
2
4
6
8
0
20
40
60
80
100
V
GS
ꢀ[V]
I
D
ꢀ[A]
I
D
=f(
V
GS
);ꢀ|
V
DS
|>2|
I
D
|
R
DS(on)max
;ꢀparameter:ꢀ
T
j
g
fs
=f(
I
D
);ꢀ
T
j
=25ꢀ°C
Final Data Sheet
7
Rev.ꢀ2.4,ꢀꢀ2020-02-04
OptiMOS
TM
ꢀPower-Transistor,ꢀ60ꢀV
BSC028N06NS
Diagramꢀ9:ꢀDrain-sourceꢀon-stateꢀresistance
Diagramꢀ10:ꢀTyp.ꢀgateꢀthresholdꢀvoltage
6.0
5
5.5
5.0
4.5
4.0
4
3
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
max
500 µA
50 µA
typ
2
1
0
-60
-20
20
60
100
140
180
-60
-20
20
60
100
140
180
T
j
ꢀ[°C]
T
j
ꢀ[°C]
R
DS(on)
=f(
T
j
);ꢀ
I
D
=50ꢀA;ꢀ
V
GS
=10ꢀV
V
GS(th)
=f(
T
j
);ꢀ
V
GS
=
V
DS
Diagramꢀ11:ꢀTyp.ꢀcapacitances
Diagramꢀ12:ꢀForwardꢀcharacteristicsꢀofꢀreverseꢀdiode
10
4
10
3
25 °C
150 °C
Ciss
10
3
10
2
10
1
10
2
10
1
10
0
Coss
Crss
0
20
40
60
0.0
0.5
1.0
1.5
V
DS
ꢀ[V]
V
SD
ꢀ[V]
C
=f(
V
DS
);ꢀ
V
GS
=0ꢀV;ꢀ
f
=1ꢀMHz
I
F
=f(
V
SD
);ꢀparameter:ꢀ
T
j
Final Data Sheet
8
Rev.ꢀ2.4,ꢀꢀ2020-02-04
OptiMOS
TM
ꢀPower-Transistor,ꢀ60ꢀV
BSC028N06NS
Diagramꢀ13:ꢀAvalancheꢀcharacteristics
Diagramꢀ14:ꢀTyp.ꢀgateꢀcharge
10
2
12
30 V
48 V
10
8
12 V
25 °C
125 °C
100 °C
10
1
6
10
0
4
2
10
-1
0
10
0
10
1
10
2
10
3
0
10
20
30
40
t
AV
ꢀ[µs]
Q
gate
ꢀ[nC]
I
AS
=f(
t
AV
);ꢀ
R
GS
=25ꢀ
Ω
;ꢀparameter:ꢀ
T
j(start)
V
GS
=f(
Q
gate
);ꢀ
I
D
=50ꢀAꢀpulsed;ꢀparameter:ꢀ
V
DD
Diagramꢀ15:ꢀDrain-sourceꢀbreakdownꢀvoltage
Diagram Gate charge waveforms
70
66
62
58
54
50
-60
-20
20
60
100
140
180
T
j
ꢀ[°C]
V
BR(DSS)
=f(
T
j
);ꢀ
I
D
=1ꢀmA
Final Data Sheet
9
Rev.ꢀ2.4,ꢀꢀ2020-02-04
OptiMOS
TM
ꢀPower-Transistor,ꢀ60ꢀV
BSC028N06NS
5ꢀꢀꢀꢀꢀPackageꢀOutlines
DOCUMENT NO.
Z8B00003332
REVISION
07
MILLIMETERS
DIMENSION
MIN.
0.90
0.15
0.34
4.80
3.90
0.03
5.70
5.90
3.88
MAX.
1.20
0.35
0.54
5.35
4.40
0.23
6.10
6.42
4.31
SCALE 10:1
A
A1
b
3mm
0
1
2
D
D1
D2
E
EUROPEAN PROJECTION
E1
E2
e
1.27
L
0.45
0.45
0.71
0.69
ISSUE DATE
06.06.2019
M
Figureꢀ1ꢀꢀꢀꢀꢀOutlineꢀPG-TDSON-8,ꢀdimensionsꢀinꢀmm
Final Data Sheet
10
Rev.ꢀ2.4,ꢀꢀ2020-02-04
OptiMOS
TM
ꢀPower-Transistor,ꢀ60ꢀV
BSC028N06NS
PG-TDSON-8: Recommen
de
d Bo
a
rdpads & Apertures
1.905
1.905
1.27
3x
0.6
1.27
3x
0.5
1.6
0.2
1.5
0.5
1.27
3x
1.27
3x
0.4
1.905
1.905
copper
solder mask
stencil apertures
all dimensions in mm
Figure 2
Outline Boardpads (TDSON-8), dimensions in mm
Final Data Sheet
11
Rev.ꢀ2.4,ꢀꢀ2020-02-04
OptiMO
S
TM
Power-Transistor ,
60 V
BSC028N06NS
Dimension in mm
Figure 3
Outline Tape (TDSON-8)
Final Data Sheet
12
Rev. 2.4,
2020-02-04
OptiMO
S
TM
Power-Transistor ,
60 V
BSC028N06NS
Revision History
BSC028N06NS
Revision: 2020-02-04, Rev. 2.4
Previous Revision
Revision Date
2.3
Subjects (major changes since last revision)
Added RthJC_typ, updated outline and footprint drawings, insert footnote “Defined by
design….”
2014-11-10
2.4
Update package drawings
2020-02-04
Trademarks
All referenced product or service names and trademarks are the property of their respective owners.
We Listen to Your Comments
Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously
improve the quality of this document. Please send your proposal (including a reference to this document) to:
Published by
Infineon Technologies AG
81726 München, Germany
© 2020 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics
(“Beschaffenheitsgarantie”) .
With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the
product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation
warranties of non-infringement of intellectual property rights of any third party.
In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this
document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the
product of Infineon Technologies in customer’s applications.
The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s
technical departments to evaluate the suitability of the product for the intended application and the completeness of the product
information given in this document with respect to such application.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon
Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in question,
please contact the nearest Infineon Technologies Office.
The Infineon Technologies component described in this Data Sheet may be used in life-support devices or systems and/or
automotive, aviation and aerospace applications or systems only with the express written approval of Infineon Technologies, if a
failure of such components can reasonably be expected to cause the failure of that life-support, automotive, aviation and
aerospace device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are
intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is
reasonable to assume that the health of the user or other persons may be endangered.
Final Data Sheet
13
Rev. 2.4,
2020-02-04
