Infineon-Technologies-BSC0302LSATMA1
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BSC0302LS
MOSFET
OptiMOS
TMꢀ
3ꢀPower-Transistor,ꢀ120ꢀV
PG-TDSON-8
8
5
7
6
Features
•ꢀN-channel,ꢀlogicꢀlevel
•ꢀ100%ꢀavalancheꢀtested
•ꢀExcellentꢀgateꢀchargeꢀxꢀRDS(on)ꢀproductꢀ(FOM)
•ꢀVeryꢀlowꢀon-resistanceꢀRDS(on)
6
7
5
4
8
Pin 1
2
3
3
•ꢀ150ꢀ°Cꢀoperatingꢀtemperature
2
4
1
•ꢀPb-freeꢀleadꢀplating;ꢀRoHSꢀcompliant
•ꢀIdealꢀforꢀhigh-frequencyꢀswitchingꢀandꢀsynchronousꢀrectification
•ꢀHalogen-freeꢀaccordingꢀtoꢀIEC61249-2-21
Productꢀvalidation
Drain
Pin 5-8
QualifiedꢀaccordingꢀtoꢀJEDECꢀStandard
*1
Gate
Pin 4
Tableꢀ1ꢀꢀꢀꢀꢀKeyꢀPerformanceꢀParameters
Parameter
Value
120
8.0
99
Unit
Source
Pin 1-3
*1: Internal body diode
V
DS
V
R
DS(on),max
I
D
m
Ω
A
Q
oss
79
nC
nC
Q
G
(0V..10V)
79
Typeꢀ/ꢀOrderingꢀCode
Package
Marking
RelatedꢀLinks
BSC0302LS
PG-TDSON-8
0302LS
–
Final Data Sheet
1
Rev.ꢀ2.2,ꢀꢀ2022-09-21
OptiMOS
TMꢀ
3ꢀPower-Transistor,ꢀ120ꢀV
BSC0302LS
TableꢀofꢀContents
Description .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Maximum ratings
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
3
Thermal characteristics
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
4
Electrical characteristics diagrams
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
6
Package Outlines
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
10
Revision History
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
13
Trademarks .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
13
Disclaimer .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
13
Final Data Sheet
2
Rev.ꢀ2.2,ꢀꢀ2022-09-21
OptiMOS
TMꢀ
3ꢀPower-Transistor,ꢀ120ꢀV
BSC0302LS
1ꢀꢀꢀꢀꢀMaximumꢀratings
atꢀ
T
A
=25ꢀ°C,ꢀunlessꢀotherwiseꢀspecified
Tableꢀ2ꢀꢀꢀꢀꢀMaximumꢀratings
Values
Typ.
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
–
–
–
–
–
–
99
77
12
V
GS
=10ꢀV,ꢀ
T
C
=25ꢀ°C
Continuous drain current
I
D
A
V
GS
=10ꢀV,ꢀ
T
C
=100ꢀ°C
V
GS
=4.5ꢀV,ꢀ
T
A
=25°C,ꢀ
R
thJA
=45°C/W
1)
Pulsed drain current
2)
Avalanche energy, single pulse
3)
Gate source voltage
I
D,pulse
E
AS
–
–
–
–
–
394
377
20
A
T
A
=25ꢀ°C
–
mJ
V
I
D
=50ꢀA,ꢀ
R
GS
=25ꢀ
Ω
V
GS
P
tot
-20
–
–
Power dissipation
156
W
T
C
=25ꢀ°C
IEC climatic category; DIN IEC 68-1:
55/150/56
Operating and storage temperature
T
j
,ꢀ
T
stg
-55
–
150
°C
2ꢀꢀꢀꢀꢀThermalꢀcharacteristics
Tableꢀ3ꢀꢀꢀꢀꢀThermalꢀcharacteristics
Values
Typ.
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Thermal resistance, junction – case,
bottom
R
thJC
R
thJC
R
thJA
R
thJA
–
0.45
0.8
°C/W –
°C/W –
°C/W –
°C/W –
Thermal resistance, junction – case,
top
–
–
–
–
–
–
18
62
45
Thermal resistance, junction – ambient,
minimal footprint
Thermal resistance, juntion – ambient,
6 cm² cooling area
2)
1)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm
2
(one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
2)
See Diagram 3 for more detailed information
3)
See Diagram 13 for more detailed information
Final Data Sheet
3
Rev.ꢀ2.2,ꢀꢀ2022-09-21
OptiMOS
TMꢀ
3ꢀPower-Transistor,ꢀ120ꢀV
BSC0302LS
3ꢀꢀꢀꢀꢀElectricalꢀcharacteristics
atꢀ
T
j
=25ꢀ°C,ꢀunlessꢀotherwiseꢀspecified
Tableꢀ4ꢀꢀꢀꢀꢀStaticꢀcharacteristics
Values
Typ.
–
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
120
1.2
Max.
–
Drain-source breakdown voltage
Gate threshold voltage
V
(BR)DSS
V
GS(th)
V
V
V
GS
=0ꢀV,ꢀ
I
D
=1ꢀmA
1.85
2.4
V
DS
=
V
GS
,ꢀ
I
D
=112ꢀµA
–
–
0.01
1
1
100
V
DS
=120ꢀV,ꢀ
V
GS
=0ꢀV,ꢀ
T
j
=25ꢀ°C
V
DS
=120ꢀV,ꢀ
V
GS
=0ꢀV,ꢀ
T
j
=125ꢀ°C
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
I
DSS
µA
nA
I
GSS
–
1
100
V
GS
=20ꢀV,ꢀ
V
DS
=0ꢀV
–
–
6.5
7.8
8.0
9.5
V
GS
=10ꢀV,ꢀ
I
D
=50ꢀA
V
GS
=4.5ꢀV,ꢀ
I
D
=25ꢀA
R
DS(on)
m
Ω
Gate resistance
R
G
g
fs
–
0.85
120
–
–
Ω
–
Transconductance
60
S
|
V
DS
|
≥
2|
I
D
|
R
DS(on)max
,ꢀ
I
D
=50ꢀA
Tableꢀ5ꢀꢀꢀꢀꢀDynamicꢀcharacteristics
Values
Typ.
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Input capacitance
1)
Output capacitance
1)
Reverse transfer capacitance
1)
C
iss
C
oss
C
rss
–
–
–
5600 7400 pF
V
GS
=0ꢀV,ꢀ
V
DS
=60ꢀV,ꢀ
f
=1ꢀMHz
V
GS
=0ꢀV,ꢀ
V
DS
=60ꢀV,ꢀ
f
=1ꢀMHz
V
GS
=0ꢀV,ꢀ
V
DS
=60ꢀV,ꢀ
f
=1ꢀMHz
590
28
770
42
pF
pF
V
DD
=60ꢀV,ꢀ
V
GS
=10ꢀV,ꢀ
I
D
=25ꢀA,
R
G,ext
=1.6ꢀ
Ω
Turn-on delay time
Rise time
t
d(on)
t
r
t
d(off)
t
f
–
–
–
–
11
9
–
–
–
–
ns
ns
ns
ns
V
DD
=60ꢀV,ꢀ
V
GS
=10ꢀV,ꢀ
I
D
=25ꢀA,
R
G,ext
=1.6ꢀ
Ω
V
DD
=60ꢀV,ꢀ
V
GS
=10ꢀV,ꢀ
I
D
=25ꢀA,
R
G,ext
=1.6ꢀ
Ω
Turn-off delay time
Fall time
37
13
V
DD
=60ꢀV,ꢀ
V
GS
=10ꢀV,ꢀ
I
D
=25ꢀA,
R
G,ext
=1.6ꢀ
Ω
Tableꢀ6ꢀꢀꢀꢀꢀGateꢀchargeꢀcharacteristics
2)
ꢀ
Values
Typ.
17.5
12.9
20.1
79
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Gate to source charge
Gate to drain charge
Switching charge
Gate charge total
Gate plateau voltage
Output charge
Q
gs
–
–
–
–
–
–
–
–
–
–
–
–
nC
nC
nC
nC
V
V
DD
=60ꢀV,ꢀ
I
D
=25ꢀA,ꢀ
V
GS
=0ꢀtoꢀ10ꢀV
V
DD
=60ꢀV,ꢀ
I
D
=25ꢀA,ꢀ
V
GS
=0ꢀtoꢀ10ꢀV
V
DD
=60ꢀV,ꢀ
I
D
=25ꢀA,ꢀ
V
GS
=0ꢀtoꢀ10ꢀV
V
DD
=60ꢀV,ꢀ
I
D
=25ꢀA,ꢀ
V
GS
=0ꢀtoꢀ10ꢀV
V
DD
=60ꢀV,ꢀ
I
D
=25ꢀA,ꢀ
V
GS
=0ꢀtoꢀ10ꢀV
V
DD
=60ꢀV,ꢀ
V
GS
=0ꢀV
Q
gd
Q
sw
Q
g
V
plateau
Q
oss
3.1
79
nC
1)
Defined by design. Not subject to production test.
2)
See
″
Gate charge waveforms
″
for parameter definition
Final Data Sheet
4
Rev.ꢀ2.2,ꢀꢀ2022-09-21
OptiMOS
TMꢀ
3ꢀPower-Transistor,ꢀ120ꢀV
BSC0302LS
Tableꢀ7ꢀꢀꢀꢀꢀReverseꢀdiode
Values
Typ.
–
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
109
394
1.2
–
Diode continuous forward current
Diode pulse current
I
S
–
–
–
–
–
A
T
C
=25ꢀ°C
I
S,pulse
V
SD
t
rr
–
A
T
C
=25ꢀ°C
Diode forward voltage
0.88
107
220
V
V
GS
=0ꢀV,ꢀ
I
F
=50ꢀA,ꢀ
T
j
=25ꢀ°C
V
R
=60ꢀV,ꢀ
I
F
=25ꢀA,ꢀd
i
F
/d
t
=100ꢀA/µs
V
R
=60ꢀV,ꢀ
I
F
=25ꢀA,ꢀd
i
F
/d
t
=100ꢀA/µs
Reverse recovery time
Reverse recovery charge
ns
nC
Q
rr
–
Final Data Sheet
5
Rev.ꢀ2.2,ꢀꢀ2022-09-21
OptiMOS
TMꢀ
3ꢀPower-Transistor,ꢀ120ꢀV
BSC0302LS
4ꢀꢀꢀꢀꢀElectricalꢀcharacteristicsꢀdiagrams
Diagramꢀ1:ꢀPowerꢀdissipation
Diagramꢀ2:ꢀDrainꢀcurrent
160
100
140
120
100
80
80
60
40
20
0
60
40
20
0
0
20
40
60
80
100
120
140
160
0
20
40
60
80
100
120
140
160
T
C
ꢀ[°C]
T
C
ꢀ[°C]
P
tot
=f(
T
C
)
I
D
=f(
T
C
);ꢀ
V
GS
≥
10ꢀV
Diagramꢀ3:ꢀSafeꢀoperatingꢀarea
Diagramꢀ4:ꢀMax.ꢀtransientꢀthermalꢀimpedance
10
3
10
1
single pulse
0.01
0.02
1 µs
0.05
0.1
0.2
10
2
10 µs
0.5
1 ms
10
0
10
-1
10
-2
100 µs
10
1
10
0
10
-1
10
-2
DC
10 ms
10
0
10
1
10
2
10
3
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
V
DS
ꢀ[V]
t
p
ꢀ[s]
I
D
=f(
V
DS
);ꢀ
T
C
=25ꢀ°C;ꢀ
D
=0;ꢀparameter:ꢀ
t
p
Z
thJC
=f(
t
p
);ꢀparameter:ꢀ
D
=
t
p
/
T
Final Data Sheet
6
Rev.ꢀ2.2,ꢀꢀ2022-09-21
OptiMOS
TMꢀ
3ꢀPower-Transistor,ꢀ120ꢀV
BSC0302LS
Diagramꢀ5:ꢀTyp.ꢀoutputꢀcharacteristics
Diagramꢀ6:ꢀTyp.ꢀdrain-sourceꢀonꢀresistance
500
20.0
10 V
17.5
400
5 V
15.0
3 V
3.5 V
12.5
300
200
100
0
4 V
4.5 V
10.0
4.5 V
5 V
10 V
7.5
5.0
2.5
0.0
4 V
3.5 V
3 V
2.8 V
0
1
2
3
4
5
0
40
80
120
160
200
240
V
DS
ꢀ[V]
I
D
ꢀ[A]
I
D
=f(
V
DS
),ꢀ
T
j
=25ꢀ°C;ꢀparameter:ꢀ
V
GS
R
DS(on)
=f(
I
D
),ꢀ
T
j
=25ꢀ°C;ꢀparameter:ꢀ
V
GS
Diagramꢀ7:ꢀTyp.ꢀtransferꢀcharacteristics
Diagramꢀ8:ꢀTyp.ꢀdrain-sourceꢀonꢀresistance
400
20.0
25 °C
350
300
250
200
150
100
50
17.5
15.0
12.5
10.0
150 °C
150 °C
7.5
25 °C
5.0
2.5
0.0
0
0
1
2
3
4
5
0
2
4
6
8
10
V
GS
ꢀ[V]
V
GS
ꢀ[V]
I
D
=f(
V
GS
),ꢀ|
V
DS
|>2|
I
D
|
R
DS(on)max
;ꢀparameter:ꢀ
T
j
R
DS(on)
=f(
V
GS
),ꢀ
I
D
=50ꢀA;ꢀparameter:ꢀ
T
j
Final Data Sheet
7
Rev.ꢀ2.2,ꢀꢀ2022-09-21
OptiMOS
TMꢀ
3ꢀPower-Transistor,ꢀ120ꢀV
BSC0302LS
Diagramꢀ9:ꢀNormalizedꢀdrain-sourceꢀonꢀresistance
Diagramꢀ10:ꢀTyp.ꢀgateꢀthresholdꢀvoltage
2.4
2.4
2.0
1.6
1.2
0.8
0.4
0.0
2.0
1.6
1.2
0.8
0.4
0.0
1120 µA
112 µA
-80
-40
0
40
80
120
160
-80
-40
0
40
80
120
160
T
j
ꢀ[°C]
T
j
ꢀ[°C]
R
DS(on)
=f(
T
j
),ꢀ
I
D
=50ꢀA,ꢀ
V
GS
=10ꢀV
V
GS(th
=f(
T
j
),ꢀ
V
GS
=
V
DS
;ꢀparameter:ꢀ
I
D
Diagramꢀ11:ꢀTyp.ꢀcapacitances
Diagramꢀ12:ꢀForwardꢀcharacteristicsꢀofꢀreverseꢀdiode
10
4
10
3
25 °C
25 °C, max
150 °C
Ciss
150 °C, max
10
3
10
2
10
1
10
2
10
1
10
0
Coss
Crss
0
20
40
60
80
100
120
0.00
0.25
0.50
0.75
1.00
1.25
1.50
V
DS
ꢀ[V]
V
SD
ꢀ[V]
C
=f(
V
DS
);ꢀ
V
GS
=0ꢀV;ꢀ
f
=1ꢀMHz
I
F
=f(
V
SD
);ꢀparameter:ꢀ
T
j
Final Data Sheet
8
Rev.ꢀ2.2,ꢀꢀ2022-09-21
OptiMOS
TMꢀ
3ꢀPower-Transistor,ꢀ120ꢀV
BSC0302LS
Diagramꢀ13:ꢀAvalancheꢀcharacteristics
Diagramꢀ14:ꢀTyp.ꢀgateꢀcharge
10
2
10
24 V
60 V
96 V
8
6
4
2
0
25 °C
10
1
100 °C
125 °C
10
0
10
-1
10
0
10
1
10
2
10
3
0
10
20
30
40
50
60
70
80
t
AV
ꢀ[µs]
Q
gate
ꢀ[nC]
I
AS
=f(
t
AV
);ꢀ
R
GS
=25ꢀ
Ω
;ꢀparameter:ꢀ
T
j,start
V
GS
=f(
Q
gate
),ꢀ
I
D
=25ꢀAꢀpulsed,ꢀ
T
j
=25ꢀ°C;ꢀparameter:ꢀ
V
DD
Diagramꢀ15:ꢀDrain-sourceꢀbreakdownꢀvoltage
Diagram Gate charge waveforms
131
129
127
125
123
121
119
117
115
113
-80
-40
0
40
80
120
160
T
j
ꢀ[°C]
V
BR(DSS)
=f(
T
j
);ꢀ
I
D
=1ꢀmA
Final Data Sheet
9
Rev.ꢀ2.2,ꢀꢀ2022-09-21
OptiMOS
TMꢀ
3ꢀPower-Transistor,ꢀ120ꢀV
BSC0302LS
5ꢀꢀꢀꢀꢀPackageꢀOutlines
PACKAGE – GROUP
NUMBER:
PG-TDSON-8-U08
MILLIMETERS
DIMENSIONS
MIN.
0.90
0.34
0.15
4.80
3.90
0.00
5.70
4.05
MAX.
1.20
0.54
0.35
5.35
4.40
0.22
6.10
4.25
A
b
c
D
D1
D2
E
E1
e
1.27
L
0.45
0.45
0.65
0.65
L1
Figureꢀ1ꢀꢀꢀꢀꢀOutlineꢀPG-TDSON-8,ꢀdimensionsꢀinꢀmm
Final Data Sheet
10
Rev.ꢀ2.2,ꢀꢀ2022-09-21
OptiMOS
TMꢀ
3ꢀPower-Transistor,ꢀ120ꢀV
BSC0302LS
Figureꢀ2ꢀꢀꢀꢀꢀOutlineꢀFootprintꢀ(TDSON-8)
Final Data Sheet
11
Rev.ꢀ2.2,ꢀꢀ2022-09-21
OptiMOS
TMꢀ
3ꢀPower-Transistor,ꢀ120ꢀV
BSC0302LS
Dimension in mm
Figureꢀ3ꢀꢀꢀꢀꢀOutlineꢀTapeꢀ(TDSON-8)
Final Data Sheet
12
Rev.ꢀ2.2,ꢀꢀ2022-09-21
OptiMOS
TMꢀ
3ꢀPower-Transistor,ꢀ120ꢀV
BSC0302LS
RevisionꢀHistory
BSC0302LS
Revision:ꢀ2022-09-21,ꢀRev.ꢀ2.2
Previous Revision
Revision Date
Subjects (major changes since last revision)
2.0
2.1
2.2
Release of final version
2019-12-02
2022-08-09
2022-09-21
Update “Features”, qualification, footnotes and fix bug.
Update outline drawing
Trademarks
Allꢀreferencedꢀproductꢀorꢀserviceꢀnamesꢀandꢀtrademarksꢀareꢀtheꢀpropertyꢀofꢀtheirꢀrespectiveꢀowners.
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improveꢀtheꢀqualityꢀofꢀthisꢀdocument.ꢀPleaseꢀsendꢀyourꢀproposalꢀ(includingꢀaꢀreferenceꢀtoꢀthisꢀdocument)ꢀto:
Publishedꢀby
InfineonꢀTechnologiesꢀAG
81726ꢀMünchen,ꢀGermany
©ꢀ2022ꢀInfineonꢀTechnologiesꢀAG
AllꢀRightsꢀReserved.
LegalꢀDisclaimer
Theꢀinformationꢀgivenꢀinꢀthisꢀdocumentꢀshallꢀinꢀnoꢀeventꢀbeꢀregardedꢀasꢀaꢀguaranteeꢀofꢀconditionsꢀorꢀcharacteristicsꢀ
(“Beschaffenheitsgarantie”)ꢀ.
Withꢀrespectꢀtoꢀanyꢀexamples,ꢀhintsꢀorꢀanyꢀtypicalꢀvaluesꢀstatedꢀhereinꢀand/orꢀanyꢀinformationꢀregardingꢀtheꢀapplicationꢀofꢀthe
product,ꢀInfineonꢀTechnologiesꢀherebyꢀdisclaimsꢀanyꢀandꢀallꢀwarrantiesꢀandꢀliabilitiesꢀofꢀanyꢀkind,ꢀincludingꢀwithoutꢀlimitation
warrantiesꢀofꢀnon-infringementꢀofꢀintellectualꢀpropertyꢀrightsꢀofꢀanyꢀthirdꢀparty.
Inꢀaddition,ꢀanyꢀinformationꢀgivenꢀinꢀthisꢀdocumentꢀisꢀsubjectꢀtoꢀcustomer’sꢀcomplianceꢀwithꢀitsꢀobligationsꢀstatedꢀinꢀthis
documentꢀandꢀanyꢀapplicableꢀlegalꢀrequirements,ꢀnormsꢀandꢀstandardsꢀconcerningꢀcustomer’sꢀproductsꢀandꢀanyꢀuseꢀofꢀthe
productꢀofꢀInfineonꢀTechnologiesꢀinꢀcustomer’sꢀapplications.
Theꢀdataꢀcontainedꢀinꢀthisꢀdocumentꢀisꢀexclusivelyꢀintendedꢀforꢀtechnicallyꢀtrainedꢀstaff.ꢀItꢀisꢀtheꢀresponsibilityꢀofꢀcustomer’s
technicalꢀdepartmentsꢀtoꢀevaluateꢀtheꢀsuitabilityꢀofꢀtheꢀproductꢀforꢀtheꢀintendedꢀapplicationꢀandꢀtheꢀcompletenessꢀofꢀtheꢀproduct
informationꢀgivenꢀinꢀthisꢀdocumentꢀwithꢀrespectꢀtoꢀsuchꢀapplication.
Information
Forꢀfurtherꢀinformationꢀonꢀtechnology,ꢀdeliveryꢀtermsꢀandꢀconditionsꢀandꢀpricesꢀpleaseꢀcontactꢀyourꢀnearestꢀInfineon
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Warnings
Dueꢀtoꢀtechnicalꢀrequirements,ꢀcomponentsꢀmayꢀcontainꢀdangerousꢀsubstances.ꢀForꢀinformationꢀonꢀtheꢀtypesꢀinꢀquestion,
pleaseꢀcontactꢀtheꢀnearestꢀInfineonꢀTechnologiesꢀOffice.
TheꢀInfineonꢀTechnologiesꢀcomponentꢀdescribedꢀinꢀthisꢀDataꢀSheetꢀmayꢀbeꢀusedꢀinꢀlife-supportꢀdevicesꢀorꢀsystemsꢀand/or
automotive,ꢀaviationꢀandꢀaerospaceꢀapplicationsꢀorꢀsystemsꢀonlyꢀwithꢀtheꢀexpressꢀwrittenꢀapprovalꢀofꢀInfineonꢀTechnologies,ꢀifꢀa
failureꢀofꢀsuchꢀcomponentsꢀcanꢀreasonablyꢀbeꢀexpectedꢀtoꢀcauseꢀtheꢀfailureꢀofꢀthatꢀlife-support,ꢀautomotive,ꢀaviationꢀand
aerospaceꢀdeviceꢀorꢀsystemꢀorꢀtoꢀaffectꢀtheꢀsafetyꢀorꢀeffectivenessꢀofꢀthatꢀdeviceꢀorꢀsystem.ꢀLifeꢀsupportꢀdevicesꢀorꢀsystemsꢀare
intendedꢀtoꢀbeꢀimplantedꢀinꢀtheꢀhumanꢀbodyꢀorꢀtoꢀsupportꢀand/orꢀmaintainꢀandꢀsustainꢀand/orꢀprotectꢀhumanꢀlife.ꢀIfꢀtheyꢀfail,ꢀitꢀis
reasonableꢀtoꢀassumeꢀthatꢀtheꢀhealthꢀofꢀtheꢀuserꢀorꢀotherꢀpersonsꢀmayꢀbeꢀendangered.
Final Data Sheet
13
Rev.ꢀ2.2,ꢀꢀ2022-09-21
