Infineon-Technologies-BSC0402NS
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BSC0402NS
MOSFET
OptiMOS
TM
5ꢀPower-Transistor,ꢀ150ꢀV
SuperSO8
5
8
6
7
7
Features
6
5
8
•ꢀOptimizedꢀforꢀhighꢀperformanceꢀSMPS,ꢀe.g.ꢀSync.ꢀRec.
•ꢀ100%ꢀavalancheꢀtested
•ꢀSuperiorꢀthermalꢀresistance
•ꢀN-channel
•ꢀPb-freeꢀleadꢀplating;ꢀRoHSꢀcompliant
•ꢀHalogen-freeꢀaccordingꢀtoꢀIEC61249-2-21
•ꢀLowꢀQ
rr
4
3
1
2
2
3
1
4
Productꢀvalidation
QualifiedꢀaccordingꢀtoꢀJEDECꢀStandard
S 1
8 D
7 D
S 2
S 3
G 4
Tableꢀ1ꢀꢀꢀꢀꢀKeyꢀPerformanceꢀParameters
6 D
5 D
Parameter
Value
150
9.3
Unit
V
DS
V
R
DS(on),max
m
Ω
A
I
D
80
Q
rr
60
nC
Typeꢀ/ꢀOrderingꢀCode
Package
Marking
RelatedꢀLinks
BSC0402NS
PG-TDSON-8
0402NS
–
Final Data Sheet
1
Rev.ꢀ2.0,ꢀꢀ2019-12-16
OptiMOS
TM
5ꢀPower-Transistor,ꢀ150ꢀV
BSC0402NS
TableꢀofꢀContents
Description .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Maximum ratings
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
3
Thermal characteristics
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
4
Electrical characteristics diagrams
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
6
Package Outlines
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
10
Revision History
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
11
Trademarks .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
11
Disclaimer .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
11
Final Data Sheet
2
Rev.ꢀ2.0,ꢀꢀ2019-12-16
OptiMOS
TM
5ꢀPower-Transistor,ꢀ150ꢀV
BSC0402NS
1ꢀꢀꢀꢀꢀMaximumꢀratings
atꢀ
T
A
=25ꢀ°C,ꢀunlessꢀotherwiseꢀspecified
Tableꢀ2ꢀꢀꢀꢀꢀMaximumꢀratings
Values
Typ.
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
–
–
–
–
80
55
V
GS
=10ꢀV,ꢀ
T
C
=25ꢀ°C
V
GS
=10ꢀV,ꢀ
T
C
=100ꢀ°C
Continuous drain current
I
D
A
Pulsed drain current
1)
Avalanche energy, single pulse
2)
Gate source voltage
I
D,pulse
E
AS
–
–
–
–
–
320
130
20
A
T
A
=25ꢀ°C
–
mJ
V
I
D
=50ꢀA,ꢀ
R
GS
=25ꢀ
Ω
V
GS
P
tot
-20
–
–
Power dissipation
139
W
T
C
=25ꢀ°C
IEC climatic category; DIN IEC 68-1:
55/150/56
Operating and storage temperature
T
j
,ꢀ
T
stg
-55
–
150
°C
2ꢀꢀꢀꢀꢀThermalꢀcharacteristics
Tableꢀ3ꢀꢀꢀꢀꢀThermalꢀcharacteristics
Values
Typ.
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Thermal resistance, junction – case,
bottom
R
thJC
–
0.54
–
0.9
°C/W –
°C/W –
Thermal resistance, junction – ambient,
6 cm² cooling area
3)
R
thJA
–
50
1)
See Diagram 3 for more detailed information
2)
See Diagram 13 for more detailed information
3)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm
2
(one layer, 70 µm thick) copper area for drain connection.
PCB is vertical in still air.
Final Data Sheet
3
Rev.ꢀ2.0,ꢀꢀ2019-12-16
OptiMOS
TM
5ꢀPower-Transistor,ꢀ150ꢀV
BSC0402NS
3ꢀꢀꢀꢀꢀElectricalꢀcharacteristics
atꢀ
T
j
=25ꢀ°C,ꢀunlessꢀotherwiseꢀspecified
Tableꢀ4ꢀꢀꢀꢀꢀStaticꢀcharacteristics
Values
Typ.
–
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
150
3.0
Max.
–
Drain-source breakdown voltage
Gate threshold voltage
V
(BR)DSS
V
GS(th)
V
V
V
GS
=0ꢀV,ꢀ
I
D
=1ꢀmA
3.8
4.6
V
DS
=
V
GS
,ꢀ
I
D
=107ꢀµA
–
–
0.1
10
1
100
V
DS
=120ꢀV,ꢀ
V
GS
=0ꢀV,ꢀ
T
j
=25ꢀ°C
V
DS
=120ꢀV,ꢀ
V
GS
=0ꢀV,ꢀ
T
j
=125ꢀ°C
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
I
DSS
µA
nA
I
GSS
–
1
100
V
GS
=20ꢀV,ꢀ
V
DS
=0ꢀV
–
–
7.9
8.7
9.3
10.5
V
GS
=10ꢀV,ꢀ
I
D
=40ꢀA
V
GS
=8ꢀV,ꢀ
I
D
=20ꢀA
R
DS(on)
m
Ω
Gate resistance
Transconductance
1)
R
G
g
fs
–
1
1.5
–
Ω
–
32
64
S
|
V
DS
|
≥
2|
I
D
|
R
DS(on)max
,ꢀ
I
D
=40ꢀA
Tableꢀ5ꢀꢀꢀꢀꢀDynamicꢀcharacteristics
Values
Typ.
2400
600
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Input capacitance
1)
Output capacitance
1)
Reverse transfer capacitance
1)
C
iss
C
oss
C
rss
–
–
–
–
–
–
pF
pF
pF
V
GS
=0ꢀV,ꢀ
V
DS
=75ꢀV,ꢀ
f
=1ꢀMHz
V
GS
=0ꢀV,ꢀ
V
DS
=75ꢀV,ꢀ
f
=1ꢀMHz
V
GS
=0ꢀV,ꢀ
V
DS
=75ꢀV,ꢀ
f
=1ꢀMHz
15
V
DD
=75ꢀV,ꢀ
V
GS
=10ꢀV,ꢀ
I
D
=40ꢀA,
R
G,ext
=3ꢀ
Ω
Turn-on delay time
Rise time
t
d(on)
t
r
t
d(off)
t
f
–
–
–
–
14
5
–
–
–
–
ns
ns
ns
ns
V
DD
=75ꢀV,ꢀ
V
GS
=10ꢀV,ꢀ
I
D
=40ꢀA,
R
G,ext
=3ꢀ
Ω
V
DD
=75ꢀV,ꢀ
V
GS
=10ꢀV,ꢀ
I
D
=40ꢀA,
R
G,ext
=3ꢀ
Ω
Turn-off delay time
Fall time
15
4
V
DD
=75ꢀV,ꢀ
V
GS
=10ꢀV,ꢀ
I
D
=40ꢀA,
R
G,ext
=3ꢀ
Ω
Tableꢀ6ꢀꢀꢀꢀꢀGateꢀchargeꢀcharacteristics
2)
ꢀ
Values
Typ.
14
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Gate to source charge
Gate to drain charge
1)
Switching charge
Gate charge total
1)
Gate plateau voltage
Output charge
1)
Q
gs
–
–
–
–
–
–
–
–
–
–
–
–
nC
nC
nC
nC
V
V
DD
=75ꢀV,ꢀ
I
D
=40ꢀA,ꢀ
V
GS
=0ꢀtoꢀ10ꢀV
V
DD
=75ꢀV,ꢀ
I
D
=40ꢀA,ꢀ
V
GS
=0ꢀtoꢀ10ꢀV
V
DD
=75ꢀV,ꢀ
I
D
=40ꢀA,ꢀ
V
GS
=0ꢀtoꢀ10ꢀV
V
DD
=75ꢀV,ꢀ
I
D
=40ꢀA,ꢀ
V
GS
=0ꢀtoꢀ10ꢀV
V
DD
=75ꢀV,ꢀ
I
D
=40ꢀA,ꢀ
V
GS
=0ꢀtoꢀ10ꢀV
V
DS
=75ꢀV,ꢀ
V
GS
=0ꢀV
Q
gd
7.0
Q
sw
Q
g
13.4
33
V
plateau
Q
oss
5.7
91
nC
1)
Defined by design. Not subject to production test.
2)
See
″
Gate charge waveforms
″
for parameter definition
Final Data Sheet
4
Rev.ꢀ2.0,ꢀꢀ2019-12-16
OptiMOS
TM
5ꢀPower-Transistor,ꢀ150ꢀV
BSC0402NS
Tableꢀ7ꢀꢀꢀꢀꢀReverseꢀdiode
Values
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Typ.
–
Max.
80
320
1.2
–
Diode continuous forward current
Diode pulse current
I
S
–
–
–
–
–
A
T
C
=25ꢀ°C
I
S,pulse
V
SD
t
rr
–
A
T
C
=25ꢀ°C
Diode forward voltage
0.86
51
60
V
V
GS
=0ꢀV,ꢀ
I
F
=40ꢀA,ꢀ
T
j
=25ꢀ°C
V
R
=75ꢀV,ꢀ
I
F
=40ꢀA,ꢀd
i
F
/d
t
=100ꢀA/µs
V
R
=75ꢀV,ꢀ
I
F
=40ꢀA,ꢀd
i
F
/d
t
=100ꢀA/µs
Reverse recovery time
1)
Reverse recovery charge
1)
ns
nC
Q
rr
–
1)
Defined by design. Not subject to production test.
Final Data Sheet
5
Rev.ꢀ2.0,ꢀꢀ2019-12-16
OptiMOS
TM
5ꢀPower-Transistor,ꢀ150ꢀV
BSC0402NS
4ꢀꢀꢀꢀꢀElectricalꢀcharacteristicsꢀdiagrams
Diagramꢀ1:ꢀPowerꢀdissipation
Diagramꢀ2:ꢀDrainꢀcurrent
150
100
125
100
75
50
25
0
80
60
40
20
0
0
20
40
60
80
100
120
140
160
0
20
40
60
80
100
120
140
160
T
C
ꢀ[°C]
T
C
ꢀ[°C]
P
tot
=f(
T
C
)
I
D
=f(
T
C
);ꢀ
V
GS
≥
10ꢀV
Diagramꢀ3:ꢀSafeꢀoperatingꢀarea
Diagramꢀ4:ꢀMax.ꢀtransientꢀthermalꢀimpedance
10
3
10
1
single pulse
0.01
0.02
1 µs
0.05
0.1
0.2
0.5
10
2
10
1
10 µs
10
0
100 µs
10
-1
10
-2
10
-3
10
0
1 ms
10 ms
DC
10
-1
10
-2
10
0
10
1
10
2
10
3
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
V
DS
ꢀ[V]
t
p
ꢀ[s]
I
D
=f(
V
DS
);ꢀ
T
C
=25ꢀ°C;ꢀ
D
=0;ꢀparameter:ꢀ
t
p
Z
thJC
=f(
t
p
);ꢀparameter:ꢀ
D
=
t
p
/
T
Final Data Sheet
6
Rev.ꢀ2.0,ꢀꢀ2019-12-16
OptiMOS
TM
5ꢀPower-Transistor,ꢀ150ꢀV
BSC0402NS
Diagramꢀ5:ꢀTyp.ꢀoutputꢀcharacteristics
Diagramꢀ6:ꢀTyp.ꢀdrain-sourceꢀonꢀresistance
300
15
9 V
10 V
8 V
14
13
12
11
10
9
240
180
120
60
7 V
8 V
7 V
9 V
8
10 V
7
6
0
5
0.0
1.0
2.0
3.0
4.0
5.0
6.0
7.0
0
20
40
60
80
100
V
DS
ꢀ[V]
I
D
ꢀ[A]
I
D
=f(
V
DS
),ꢀ
T
j
=25ꢀ°C;ꢀparameter:ꢀ
V
GS
R
DS(on)
=f(
I
D
),ꢀ
T
j
=25ꢀ°C;ꢀparameter:ꢀ
V
GS
Diagramꢀ7:ꢀTyp.ꢀtransferꢀcharacteristics
Diagramꢀ8:ꢀTyp.ꢀdrain-sourceꢀonꢀresistance
100
24
21
18
15
12
9
80
60
40
20
150 °C
150 °C
25 °C
25 °C
0
6
0
2
4
6
8
10
5
6
7
8
9
10
V
GS
ꢀ[V]
V
GS
ꢀ[V]
I
D
=f(
V
GS
),ꢀ|
V
DS
|>2|
I
D
|
R
DS(on)max
;ꢀparameter:ꢀ
T
j
R
DS(on)
=f(
V
GS
),ꢀ
I
D
=40ꢀA;ꢀparameter:ꢀ
T
j
Final Data Sheet
7
Rev.ꢀ2.0,ꢀꢀ2019-12-16
OptiMOS
TM
5ꢀPower-Transistor,ꢀ150ꢀV
BSC0402NS
Diagramꢀ9:ꢀNormalizedꢀdrain-sourceꢀonꢀresistance
Diagramꢀ10:ꢀTyp.ꢀgateꢀthresholdꢀvoltage
2.0
5
1.6
1.2
0.8
0.4
0.0
4
3
2
1
0
1070 µA
107 µA
-80
-40
0
40
80
120
160
-80
-40
0
40
80
120
160
T
j
ꢀ[°C]
T
j
ꢀ[°C]
R
DS(on)
=f(
T
j
),ꢀ
I
D
=40ꢀA,ꢀ
V
GS
=10ꢀV
V
GS(th
=f(
T
j
),ꢀ
V
GS
=
V
DS
;ꢀparameter:ꢀ
I
D
Diagramꢀ11:ꢀTyp.ꢀcapacitances
Diagramꢀ12:ꢀForwardꢀcharacteristicsꢀofꢀreverseꢀdiode
10
4
10
3
25 °C
25 °C, max
150 °C
Ciss
150 °C, max
10
3
10
2
10
1
10
0
Coss
10
2
10
1
10
0
Crss
0
25
50
75
100
125
150
0.00
0.25
0.50
0.75
1.00
1.25
1.50
V
DS
ꢀ[V]
V
SD
ꢀ[V]
C
=f(
V
DS
);ꢀ
V
GS
=0ꢀV;ꢀ
f
=1ꢀMHz
I
F
=f(
V
SD
);ꢀparameter:ꢀ
T
j
Final Data Sheet
8
Rev.ꢀ2.0,ꢀꢀ2019-12-16
OptiMOS
TM
5ꢀPower-Transistor,ꢀ150ꢀV
BSC0402NS
Diagramꢀ13:ꢀAvalancheꢀcharacteristics
Diagramꢀ14:ꢀTyp.ꢀgateꢀcharge
10
2
10
30
75
120
8
6
4
2
0
25 °C
10
1
100 °C
10
0
125 °C
10
-1
10
0
10
1
10
2
10
3
0
5
10
15
20
25
30
35
t
AV
ꢀ[µs]
Q
gate
ꢀ[nC]
I
AS
=f(
t
AV
);ꢀ
R
GS
=25ꢀ
Ω
;ꢀparameter:ꢀ
T
j,start
V
GS
=f(
Q
gate
),ꢀ
I
D
=40ꢀAꢀpulsed,ꢀ
T
j
=25ꢀ°C;ꢀparameter:ꢀ
V
DD
Diagramꢀ15:ꢀDrain-sourceꢀbreakdownꢀvoltage
Diagram Gate charge waveforms
160
158
156
154
152
150
148
146
144
-80
-40
0
40
80
120
160
T
j
ꢀ[°C]
V
BR(DSS)
=f(
T
j
);ꢀ
I
D
=1ꢀmA
Final Data Sheet
9
Rev.ꢀ2.0,ꢀꢀ2019-12-16
OptiMOS
TM
5ꢀPower-Transistor,ꢀ150ꢀV
BSC0402NS
5ꢀꢀꢀꢀꢀPackageꢀOutlines
Figureꢀ1ꢀꢀꢀꢀꢀOutlineꢀPG-TDSON-8,ꢀdimensionsꢀinꢀmm
Final Data Sheet
10
Rev.ꢀ2.0,ꢀꢀ2019-12-16
OptiMOS
TM
5ꢀPower-Transistor,ꢀ150ꢀV
BSC0402NS
RevisionꢀHistory
BSC0402NS
Revision:ꢀ2019-12-16,ꢀRev.ꢀ2.0
Previous Revision
Revision Date
Subjects (major changes since last revision)
Release of final version
2.0
2019-12-16
Trademarks
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Publishedꢀby
InfineonꢀTechnologiesꢀAG
81726ꢀMünchen,ꢀGermany
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product,ꢀInfineonꢀTechnologiesꢀherebyꢀdisclaimsꢀanyꢀandꢀallꢀwarrantiesꢀandꢀliabilitiesꢀofꢀanyꢀkind,ꢀincludingꢀwithoutꢀlimitation
warrantiesꢀofꢀnon-infringementꢀofꢀintellectualꢀpropertyꢀrightsꢀofꢀanyꢀthirdꢀparty.
Inꢀaddition,ꢀanyꢀinformationꢀgivenꢀinꢀthisꢀdocumentꢀisꢀsubjectꢀtoꢀcustomer’sꢀcomplianceꢀwithꢀitsꢀobligationsꢀstatedꢀinꢀthis
documentꢀandꢀanyꢀapplicableꢀlegalꢀrequirements,ꢀnormsꢀandꢀstandardsꢀconcerningꢀcustomer’sꢀproductsꢀandꢀanyꢀuseꢀofꢀthe
productꢀofꢀInfineonꢀTechnologiesꢀinꢀcustomer’sꢀapplications.
Theꢀdataꢀcontainedꢀinꢀthisꢀdocumentꢀisꢀexclusivelyꢀintendedꢀforꢀtechnicallyꢀtrainedꢀstaff.ꢀItꢀisꢀtheꢀresponsibilityꢀofꢀcustomer’s
technicalꢀdepartmentsꢀtoꢀevaluateꢀtheꢀsuitabilityꢀofꢀtheꢀproductꢀforꢀtheꢀintendedꢀapplicationꢀandꢀtheꢀcompletenessꢀofꢀtheꢀproduct
informationꢀgivenꢀinꢀthisꢀdocumentꢀwithꢀrespectꢀtoꢀsuchꢀapplication.
Information
Forꢀfurtherꢀinformationꢀonꢀtechnology,ꢀdeliveryꢀtermsꢀandꢀconditionsꢀandꢀpricesꢀpleaseꢀcontactꢀyourꢀnearestꢀInfineon
Warnings
Dueꢀtoꢀtechnicalꢀrequirements,ꢀcomponentsꢀmayꢀcontainꢀdangerousꢀsubstances.ꢀForꢀinformationꢀonꢀtheꢀtypesꢀinꢀquestion,
pleaseꢀcontactꢀtheꢀnearestꢀInfineonꢀTechnologiesꢀOffice.
TheꢀInfineonꢀTechnologiesꢀcomponentꢀdescribedꢀinꢀthisꢀDataꢀSheetꢀmayꢀbeꢀusedꢀinꢀlife-supportꢀdevicesꢀorꢀsystemsꢀand/or
automotive,ꢀaviationꢀandꢀaerospaceꢀapplicationsꢀorꢀsystemsꢀonlyꢀwithꢀtheꢀexpressꢀwrittenꢀapprovalꢀofꢀInfineonꢀTechnologies,ꢀifꢀa
failureꢀofꢀsuchꢀcomponentsꢀcanꢀreasonablyꢀbeꢀexpectedꢀtoꢀcauseꢀtheꢀfailureꢀofꢀthatꢀlife-support,ꢀautomotive,ꢀaviationꢀand
aerospaceꢀdeviceꢀorꢀsystemꢀorꢀtoꢀaffectꢀtheꢀsafetyꢀorꢀeffectivenessꢀofꢀthatꢀdeviceꢀorꢀsystem.ꢀLifeꢀsupportꢀdevicesꢀorꢀsystemsꢀare
intendedꢀtoꢀbeꢀimplantedꢀinꢀtheꢀhumanꢀbodyꢀorꢀtoꢀsupportꢀand/orꢀmaintainꢀandꢀsustainꢀand/orꢀprotectꢀhumanꢀlife.ꢀIfꢀtheyꢀfail,ꢀitꢀis
reasonableꢀtoꢀassumeꢀthatꢀtheꢀhealthꢀofꢀtheꢀuserꢀorꢀotherꢀpersonsꢀmayꢀbeꢀendangered.
Final Data Sheet
11
Rev.ꢀ2.0,ꢀꢀ2019-12-16
