Infineon-Technologies-BSC080N03MS-G
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BSC080N03MS G
Opti
MOS
™3 M-Series Power-MOSFET
Product Summary
Features
V
DS
30
8
V
• Optimized for 5V driver application (Notebook, VGA, POL)
• Low FOM
SW
for High Frequency SMPS
• 100% avalanche tested
R
DS(on),max
V
GS
=10 V
V
GS
=4.5 V
m
W
10.2
53
I
D
A
• N-channel
PG-TDSON-8
• Very low on-resistance
R
DS(on)
@
V
GS
=4.5 V
• Excellent gate charge x
R
DS(on)
product (FOM)
• Qualified according to JEDEC
1)
for target applications
• Superior thermal resistance
• Pb-free plating; RoHS compliant
• Halogen-free according to IEC61249-2-21
Type
Package
Marking
BSC080N03MS G
PG-TDSON-8
080N03MS
Maximum ratings,
at
T
j
=25 °C, unless otherwise specified
Value
Parameter
Symbol Conditions
Unit
I
D
V
GS
=10 V,
T
C
=25 °C
V
GS
=10 V,
T
C
=100 °C
Continuous drain current
53
33
A
V
GS
=4.5 V,
T
C
=25 °C
47
30
V
GS
=4.5 V,
T
C
=100 °C
V
GS
=4.5 V,
T
A
=25 °C,
R
thJA
=50 K/W
2)
13
Pulsed drain current
3)
I
D,pulse
I
AS
T
C
=25 °C
212
45
Avalanche current, single pulse
4)
Avalanche energy, single pulse
Gate source voltage
T
C
=25 °C
E
AS
V
GS
I
D
=35 A,
R
GS
=25
W
15
mJ
V
±20
1)
J-STD20 and JESD22
Rev. 2.1
page 1
2013-05-17
BSC080N03MS G
Maximum ratings,
at
T
j
=25 °C, unless otherwise specified
Value
Parameter
Symbol Conditions
Unit
P
tot
T
C
=25 °C
Power dissipation
35
W
T
A
=25 °C,
R
thJA
=50 K/W
2)
2.5
T
j
,
T
stg
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
-55 … 150
55/150/56
°C
Values
typ.
Parameter
Symbol Conditions
Unit
min.
max.
Thermal characteristics
R
thJC
Thermal resistance, junction – case
bottom
–
–
–
–
–
–
3.6
20
50
K/W
top
6 cm
2
cooling area
2)
R
thJA
Device on PCB
Electrical characteristics,
at
T
j
=25 °C, unless otherwise specified
Static characteristics
V
(BR)DSS
V
GS
=0 V,
I
D
=1 mA
V
GS(th)
V
DS
=
V
GS
,
I
D
=250 µA
Drain-source breakdown voltage
Gate threshold voltage
30
1
–
–
–
V
2
V
DS
=30 V,
V
GS
=0 V,
T
j
=25 °C
I
DSS
Zero gate voltage drain current
–
–
0.1
10
1
µA
V
DS
=30 V,
V
GS
=0 V,
T
j
=125 °C
100
I
GSS
V
GS
=16 V,
V
DS
=0 V
Gate-source leakage current
–
–
10
8.2
6.7
1
100 nA
R
DS(on)
V
GS
=4.5 V,
I
D
=30 A
V
GS
=10 V,
I
D
=30 A
R
G
Drain-source on-state resistance
10.2
8.0
m
W
–
Gate resistance
0.5
1.8
W
|
V
DS
|>2|
I
D
|
R
DS(on)max
I
D
=30 A
,
g
fs
Transconductance
29
58
–
S
2)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
3)
See figure 3 for more detailed information
Rev. 2.1
page 2
2013-05-17
BSC080N03MS G
Values
Parameter
Symbol Conditions
Unit
min.
typ.
max.
Dynamic characteristics
C
iss
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
–
–
–
–
–
–
–
1600
510
33
2100 pF
V
GS
=0 V,
V
DS
=15 V,
f
=1 MHz
C
oss
C
rss
t
d(on)
t
r
680
–
10
–
–
–
–
ns
5.4
10
V
DD
=15 V,
V
GS
=4.5 V,
I
D
=30 A,
R
G
=1.6
W
t
d(off)
t
f
Turn-off delay time
Fall time
5.6
Gate Charge Characteristics
5)
Gate to source charge
Gate charge at threshold
Gate to drain charge
Switching charge
Q
gs
–
–
–
–
–
–
5.0
2.5
2.3
4.8
9.9
3.2
6.7
3.4
3.9
7.2
13
–
nC
Q
g(th)
Q
gd
V
DD
=15 V,
I
D
=30 A,
V
GS
=0 to 4.5 V
Q
sw
Q
g
Gate charge total
V
plateau
Gate plateau voltage
V
V
DD
=15 V,
I
D
=30 A,
V
GS
=0 to 10 V
Q
g
Gate charge total
–
21
27
V
DS
=0.1 V,
V
GS
=0 to 4.5 V
Q
g(sync)
Gate charge total, sync. FET
Output charge
–
–
8.6
13
11
18
nC
Q
oss
V
DD
=15 V,
V
GS
=0 V
Reverse Diode
I
S
Diode continuous forward current
Diode pulse current
–
–
–
–
32
A
T
C
=25 °C
I
S,pulse
212
V
GS
=0 V,
I
F
=30 A,
T
j
=25 °C
V
SD
Diode forward voltage
–
–
0.89
–
1.1
10
V
V
R
=15 V,
I
F
=
I
S
,
d
i
F
/d
t
=400 A/µs
Q
rr
Reverse recovery charge
nC
4)
See figure 13 for more detailed information
5)
See figure 16 for gate charge parameter definition
Rev. 2.1
page 3
2013-05-17
BSC080N03MS G
1 Power dissipation
2 Drain current
I
D
=f(
T
C
)
P
tot
=f(
T
C
)
parameter:
V
GS
40
30
20
10
0
60
50
40
30
20
10
10 V
4.5 V
0
0
0
40
80
120
160
40
80
T
C
[°C]
120
160
T
C
[°C]
3 Safe operating area
I
D
=f(
V
DS
);
T
C
=25 °C;
D
=0
parameter:
t
p
4 Max. transient thermal impedance
Z
thJC
=f(
t
p
)
parameter:
D
=
t
p
/
T
10
3
10
limited by on-state
resistance
1 µs
0.5
10
2
10 µs
1
0.2
100 µs
0.1
DC
10
1
0.05
0.02
1 ms
0.01
0.1
10 ms
single pulse
10
0
10
-1
0
0
0
0
0
0
1
0.01
10
-1
10
0
10
1
10
2
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
V
DS
[V]
t
p
[s]
Rev. 2.1
page 4
2013-05-17
BSC080N03MS G
5 Typ. output characteristics
I
D
=f(
V
DS
);
T
j
=25 °C
6 Typ. drain-source on resistance
R
DS(on)
=f(
I
D
);
T
j
=25 °C
parameter:
V
GS
parameter:
V
GS
160
14
3 V
3.2 V
4.5 V
5 V
12
10
8
3.5 V
120
10 V
4 V
4.5 V
5 V
4 V
6 V
80
40
0
10 V
6
3.5 V
3.2 V
4
2
3 V
2.8 V
0
0
1
2
3
0
10
20
30
40
50
V
DS
[V]
I
D
[A]
7 Typ. transfer characteristics
I
D
=f(
V
GS
); |
V
DS
|>2|
I
D
|
R
DS(on)max
parameter:
T
j
8 Typ. forward transconductance
g
fs
=f(
I
D
);
T
j
=25 °C
120
140
120
100
80
80
60
40
40
150 °C
20
25 °C
0
0
0
1
2
3
4
5
0
40
80
120
160
V
GS
[V]
I
D
[A]
Rev. 2.1
page 5
2013-05-17
BSC080N03MS G
9 Drain-source on-state resistance
10 Typ. gate threshold voltage
R
DS(on)
=f(
T
j
);
I
D
=30 A;
V
GS
=10 V
V
GS(th)
=f(
T
j
);
V
GS
=
V
DS
;
I
D
=250 µA
16
12
2.5
2
1.5
1
98 %
8
typ
4
0
0.5
0
-60
-20
20
60
100
140
180
-60
-20
20
60
100
140
180
T
j
[°C]
T
j
[°C]
11 Typ. capacitances
12 Forward characteristics of reverse diode
I
F
=f(
V
SD
C
=f(
V
DS
);
V
GS
=0 V;
f
=1 MHz
)
parameter:
T
j
10000
10
4
1000
25 °C
150 °C, 98%
Ciss
1000
10
3
100
Coss
150 °C
25 °C, 98%
100
10
2
10
Crss
10
10
1
1
0
10
20
30
0.0
0.5
1.0
V
SD
[V]
1.5
2.0
V
DS
[V]
Rev. 2.1
page 6
2013-05-17
BSC080N03MS G
13 Avalanche characteristics
14 Typ. gate charge
V
GS
=f(
Q
gate
);
I
D
=30 A pulsed
parameter:
V
DD
I
AS
=f(
t
AV
);
R
GS
=25
W
parameter:
T
j(start)
100
12
10
8
15 V
6 V
24 V
25 °C
10
6
100 °C
125 °C
4
2
1
0
1
10
100
1000
0
5
10
15
20
25
t
AV
[µs]
Q
gate
[nC]
15 Drain-source breakdown voltage
16 Gate charge waveforms
V
BR(DSS)
=f(
T
j
);
I
D
=1 mA
34
32
30
28
26
24
22
20
V
GS
Q
g
V
gs(th)
Q
g(th)
Q
sw
Q
gd
Q
gate
Q
gs
-60
-20
20
60
100
140
180
T
j
[°C]
Rev. 2.1
page 7
2013-05-17
BSC080N03MS G
Package Outline
PG-TDSON-8-5
Footprint
Dimensions in mm
Rev. 2.1
page 8
2013-05-17
BSC080N03MS G
Package Outline
PG-TDSON-8: Tape
Dimensions in mm
Rev. 2.1
page 9
2013-05-17
BSC080N03MS G
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2009 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of
conditions or characteristics. With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device,
Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please
Warnings
Due to technical requirements, components may contain dangerous substances. For information
on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with
the express written approval of Infineon Technologies, if a failure of such components can
reasonably be expected to cause the failure of that life-support device or system or to affect
the safety or effectiveness of that device or system. Life support devices or systems are
intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user
or other persons may be endangered.
Rev. 2.1
page 10
2013-05-17
