Infineon-Technologies-BSC0901NSI
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BSC0901NSI
MOSFET
OptiMOS
TM
ꢀPower-MOSFET,ꢀ30ꢀV
SuperSO8
5
8
6
7
7
Features
6
5
8
•ꢀOptimizedꢀSyncFETꢀforꢀhighꢀperformanceꢀbuckꢀconverter
•ꢀMonolithicalyꢀintegratedꢀꢀSchottky-likeꢀdiode
•ꢀVeryꢀlowꢀon-resistanceꢀ
R
DS(on)
ꢀ@ꢀ
V
GS
=4.5ꢀV
•ꢀ100%ꢀavalancheꢀtested
4
3
•ꢀSuperiorꢀthermalꢀresistance
1
2
2
•ꢀN-channel
3
1
•ꢀQualifiedꢀaccordingꢀtoꢀJEDEC
1)
ꢀꢀforꢀtargetꢀapplications
•ꢀPb-freeꢀleadꢀꢀplating;ꢀRoHSꢀcompliant
•ꢀHalogen-freeꢀaccordingꢀtoꢀIEC61249-2-21
4
S 1
8 D
7 D
Tableꢀ1ꢀꢀꢀꢀꢀKeyꢀPerformanceꢀParameters
S 2
S 3
G 4
Parameter
Value
Unit
6 D
5 D
V
DS
30
V
R
DS(on),max
I
D
2
m
Ω
A
100
28
Q
OSS
nC
nC
Q
G
(0V..10V)
41
Typeꢀ/ꢀOrderingꢀCode
Package
Marking
RelatedꢀLinks
BSC0901NSI
PG-TDSON-8
0901NSI
–
1)
J-STD20 and JESD22
Final Data Sheet
1
Rev.ꢀ2.4,ꢀꢀ2019-10-31
OptiMOS
TM
ꢀPower-MOSFET,ꢀ30ꢀV
BSC0901NSI
TableꢀofꢀContents
Description .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Maximum ratings
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
3
Thermal characteristics
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
4
Electrical characteristics diagrams
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
6
Package Outlines
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
10
Revision History
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
13
Trademarks .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
13
Disclaimer .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
13
Final Data Sheet
2
Rev.ꢀ2.4,ꢀꢀ2019-10-31
OptiMOS
TM
ꢀPower-MOSFET,ꢀ30ꢀV
BSC0901NSI
1ꢀꢀꢀꢀꢀMaximumꢀratings
atꢀ
T
j
=25ꢀ°C,ꢀunlessꢀotherwiseꢀspecified
Tableꢀ2ꢀꢀꢀꢀꢀMaximumꢀratings
Values
Typ.
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
–
–
–
–
–
–
–
–
–
–
100
92
100
81
V
GS
=10ꢀV,ꢀ
T
C
=25ꢀ°C
V
GS
=10ꢀV,ꢀ
T
C
=100ꢀ°C
V
GS
=4.5ꢀV,ꢀ
T
C
=25ꢀ°C
Continuous drain current
I
D
A
V
GS
=4.5ꢀV,ꢀ
T
C
=100ꢀ°C
28
V
GS
=10ꢀV,ꢀ
T
A
=25ꢀ°C,ꢀ
R
thJA
=50ꢀK/W
1)
Pulsed drain current
2)
I
D,pulse
I
AS
–
–
–
–
–
400
50
A
T
C
=25ꢀ°C
Avalanche current, single pulse
3)
Avalanche energy, single pulse
Gate source voltage
–
A
T
C
=25ꢀ°C
E
AS
V
GS
–
45
mJ
V
I
D
=50ꢀA,ꢀ
R
GS
=25ꢀ
Ω
-20
20
–
–
–
–
–
69
2.5
T
C
=25ꢀ°C
Power dissipation
P
tot
W
T
A
=25ꢀ°C,ꢀ
R
thJA
=50ꢀK/W
1)
IEC climatic category;
DIN IEC 68-1: 55/150/56
Operating and storage temperature
T
j
,ꢀ
T
stg
-55
–
150
°C
2ꢀꢀꢀꢀꢀThermalꢀcharacteristics
Tableꢀ3ꢀꢀꢀꢀꢀThermalꢀcharacteristics
Values
Typ.
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Thermal resistance, junction – case,
bottom
R
thJC
R
thJC
R
thJA
–
–
–
–
1.8
K/W
K/W
K/W
–
–
–
Thermal resistance, junction – case,
top
–
–
20
50
Device on PCB,
6 cm
2
cooling area
1)
1)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
2)
See figure 3 for more detailed information
3)
See figure 13 for more detailed information
Final Data Sheet
3
Rev.ꢀ2.4,ꢀꢀ2019-10-31
OptiMOS
TM
ꢀPower-MOSFET,ꢀ30ꢀV
BSC0901NSI
3ꢀꢀꢀꢀꢀElectricalꢀcharacteristics
atꢀ
T
j
=25ꢀ°C,ꢀunlessꢀotherwiseꢀspecified
Tableꢀ4ꢀꢀꢀꢀꢀStaticꢀcharacteristics
Values
Typ.
–
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
V
GS
=0ꢀV,ꢀ
I
D
=10ꢀmA
mV/K
I
D
=10ꢀmA,ꢀreferencedꢀtoꢀ25ꢀ°C
Min.
Max.
Drain-source breakdown voltage
V
(BR)DSS
30
–
V
Breakdown voltage temperature
coefficient
d
V
(BR)DSSꢀ
/d
T
j
–
V
GS(th)
I
DSS
15
–
–
Gate threshold voltage
1
2.2
V
V
DS
=
V
GS
,ꢀ
I
D
=250ꢀµA
–
–
–
3
0.5
–
V
DS
=24ꢀV,ꢀ
V
GS
=0ꢀV
V
DS
=24ꢀV,ꢀ
V
GS
=0ꢀV,ꢀ
T
j
=125ꢀ°C
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
mA
nA
m
Ω
I
GSS
–
10
100
V
GS
=20ꢀV,ꢀ
V
DS
=0ꢀV
–
–
2.1
1.7
2.6
2.0
V
GS
=4.5ꢀV,ꢀ
I
D
=30ꢀA
V
GS
=10ꢀV,ꢀ
I
D
=30ꢀA
R
DS(on)
Gate resistance
R
G
g
fs
0.4
65
0.8
1.6
–
Ω
–
Transconductance
130
S
|
V
DS
|>2|
I
D
|
R
DS(on)max
,ꢀ
I
D
=30ꢀA
Tableꢀ5ꢀꢀꢀꢀꢀDynamicꢀcharacteristics
Values
Typ.
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Input capacitance
C
iss
C
oss
C
rss
–
–
–
2600 3500 pF
1000 1300 pF
V
GS
=0ꢀV,ꢀ
V
DS
=15ꢀV,ꢀ
f
=1ꢀMHz
V
GS
=0ꢀV,ꢀ
V
DS
=15ꢀV,ꢀ
f
=1ꢀMHz
V
GS
=0ꢀV,ꢀ
V
DS
=15ꢀV,ꢀ
f
=1ꢀMHz
Output capacitance
Reverse transfer capacitance
140
5.0
280
–
pF
ns
V
DD
=15ꢀV,ꢀ
V
GS
=10ꢀV,ꢀ
I
D
=30ꢀA,
R
G
=1.6ꢀ
Ω
Turn-on delay time
Rise time
t
d(on)
t
r
t
d(off)
t
f
–
–
–
–
V
DD
=15ꢀV,ꢀ
V
GS
=10ꢀV,ꢀ
I
D
=30ꢀA,
R
G
=1.6ꢀ
Ω
7.2
27
–
–
–
ns
ns
ns
V
DD
=15ꢀV,ꢀ
V
GS
=10ꢀV,ꢀ
I
D
=30ꢀA,
R
G
=1.6ꢀ
Ω
Turn-off delay time
Fall time
V
DD
=15ꢀV,ꢀ
V
GS
=10ꢀV,ꢀ
I
D
=30ꢀA,
R
G
=1.6ꢀ
Ω
4.6
Tableꢀ6ꢀꢀꢀꢀꢀGateꢀchargeꢀcharacteristics
1)
ꢀ
Values
Typ.
6.3
4.1
6.5
8.8
20
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
8.4
5.4
10.8
13.8
27
Gate to source charge
Gate charge at threshold
Gate to drain charge
Switching charge
Q
gs
–
–
–
–
–
–
–
–
–
nC
nC
nC
nC
nC
V
V
DD
=15ꢀV,ꢀ
I
D
=30ꢀA,ꢀ
V
GS
=0ꢀtoꢀ4.5ꢀV
V
DD
=15ꢀV,ꢀ
I
D
=30ꢀA,ꢀ
V
GS
=0ꢀtoꢀ4.5ꢀV
V
DD
=15ꢀV,ꢀ
I
D
=30ꢀA,ꢀ
V
GS
=0ꢀtoꢀ4.5ꢀV
V
DD
=15ꢀV,ꢀ
I
D
=30ꢀA,ꢀ
V
GS
=0ꢀtoꢀ4.5ꢀV
V
DD
=15ꢀV,ꢀ
I
D
=30ꢀA,ꢀ
V
GS
=0ꢀtoꢀ4.5ꢀV
V
DD
=15ꢀV,ꢀ
I
D
=30ꢀA,ꢀ
V
GS
=0ꢀtoꢀ4.5ꢀV
V
DD
=15ꢀV,ꢀ
I
D
=30ꢀA,ꢀ
V
GS
=0ꢀtoꢀ10ꢀV
V
DS
=0.1ꢀV,ꢀ
V
GS
=0ꢀtoꢀ4.5ꢀV
Q
g(th)
Q
gd
Q
sw
Gate charge total
Q
g
Gate plateau voltage
Gate charge total
V
plateau
Q
g
2.5
41
–
54
nC
nC
nC
Gate charge total, sync. FET
Output charge
Q
g(sync)
Q
oss
16
22
28
37
V
DD
=15ꢀV,ꢀ
V
GS
=0ꢀV
1)
See
″
Gate charge waveforms
″
for parameter definition
Final Data Sheet
4
Rev.ꢀ2.4,ꢀꢀ2019-10-31
OptiMOS
TM
ꢀPower-MOSFET,ꢀ30ꢀV
BSC0901NSI
Tableꢀ7ꢀꢀꢀꢀꢀReverseꢀdiode
Values
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Typ.
Max.
69
Diode continuous forward current
Diode pulse current
I
S
–
–
–
–
–
A
T
C
=25ꢀ°C
I
S,pulse
V
SD
Q
rr
–
276
0.7
–
A
T
C
=25ꢀ°C
Diode forward voltage
0.55
2
V
V
GS
=0ꢀV,ꢀ
I
F
=7ꢀA,ꢀ
T
j
=25ꢀ°C
V
R
=15ꢀV,ꢀ
I
F
=7ꢀA,ꢀd
i
F
/d
t
=400ꢀA/µs
Reverse recovery charge
nC
Final Data Sheet
5
Rev.ꢀ2.4,ꢀꢀ2019-10-31
OptiMOS
TM
ꢀPower-MOSFET,ꢀ30ꢀV
BSC0901NSI
4ꢀꢀꢀꢀꢀElectricalꢀcharacteristicsꢀdiagrams
Diagramꢀ1:ꢀPowerꢀdissipation
Diagramꢀ2:ꢀDrainꢀcurrent
80
120
70
60
50
40
30
20
10
0
100
80
60
40
20
0
0
40
80
120
160
0
40
80
120
160
T
C
ꢀ[°C]
T
C
ꢀ[°C]
P
tot
=f(
T
C
)
I
D
=f(
T
C
);ꢀ
V
GS
≥
10ꢀV
Diagramꢀ3:ꢀSafeꢀoperatingꢀarea
Diagramꢀ4:ꢀMax.ꢀtransientꢀthermalꢀimpedance
10
3
10
1
1 µs
10 µs
10
2
10
1
10
0
10
-1
10
0
0.5
100 µs
0.2
0.1
1 ms
10 ms
0.05
10
-1
0.02
0.01
DC
single pulse
10
-2
10
-3
10
-1
10
0
10
1
10
2
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
V
DS
ꢀ[V]
t
p
ꢀ[s]
I
D
=f(
V
DS
);ꢀ
T
C
=25ꢀ°C;ꢀ
D
=0;ꢀparameter:ꢀ
t
p
Z
thJC
=f(
t
p
);ꢀparameter:ꢀ
D
=
t
p
/
T
Final Data Sheet
6
Rev.ꢀ2.4,ꢀꢀ2019-10-31
OptiMOS
TM
ꢀPower-MOSFET,ꢀ30ꢀV
BSC0901NSI
Diagramꢀ5:ꢀTyp.ꢀoutputꢀcharacteristics
Diagramꢀ6:ꢀTyp.ꢀdrain-sourceꢀonꢀresistance
400
4
4.5 V
5 V
4 V
10 V
300
3
3.2 V
3.5 V
3.5 V
4 V
4.5 V
5 V
200
100
0
2
1
0
7 V
3.2 V
8 V
10 V
3 V
2.8 V
0
1
2
3
0
10
20
30
40
50
V
DS
ꢀ[V]
I
D
ꢀ[A]
I
D
=f(
V
DS
);ꢀ
T
j
=25ꢀ°C;ꢀparameter:ꢀ
V
GS
R
DS(on)
=f(
I
D
);ꢀ
T
j
=25ꢀ°C;ꢀparameter:ꢀ
V
GS
Diagramꢀ7:ꢀTyp.ꢀtransferꢀcharacteristics
Diagramꢀ8:ꢀTyp.ꢀforwardꢀtransconductance
400
320
320
240
160
240
160
80
150 °C
25 °C
80
0
0
0
1
2
3
4
5
0
40
80
120
160
V
GS
ꢀ[V]
I
D
ꢀ[A]
I
D
=f(
V
GS
);ꢀ|
V
DS
|>2|
I
D
|
R
DS(on)max
;ꢀparameter:ꢀ
T
j
g
fs
=f(
I
D
);ꢀ
T
j
=25ꢀ°C
Final Data Sheet
7
Rev.ꢀ2.4,ꢀꢀ2019-10-31
OptiMOS
TM
ꢀPower-MOSFET,ꢀ30ꢀV
BSC0901NSI
Diagramꢀ9:ꢀDrain-sourceꢀon-stateꢀresistance
Diagramꢀ10:ꢀTyp.ꢀgateꢀthresholdꢀvoltage
4
2.5
2.0
1.5
1.0
0.5
0.0
3
2
1
0
-60
-20
20
60
100
140
180
-60
-20
20
60
100
140
180
T
j
ꢀ[°C]
T
j
ꢀ[°C]
R
DS(on)
=f(
T
j
);ꢀ
I
D
=30ꢀA;ꢀ
V
GS
=10ꢀV
V
GS(th)
=f(
T
j
);ꢀ
V
GS
=
V
DS
;ꢀ
I
D
=10ꢀmA
Diagramꢀ11:ꢀTyp.ꢀcapacitances
Diagramꢀ12:ꢀForwardꢀcharacteristicsꢀofꢀreverseꢀdiode
10
4
10
3
-55 °C
25 °C
125 °C
150 °C
Ciss
10
2
10
1
10
0
10
-1
Coss
10
3
10
2
10
1
Crss
0
10
20
30
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V
DS
ꢀ[V]
V
SD
ꢀ[V]
C
=f(
V
DS
);ꢀ
V
GS
=0ꢀV;ꢀ
f
=1ꢀMHz
I
F
=f(
V
SD
);ꢀparameter:ꢀ
T
j
Final Data Sheet
8
Rev.ꢀ2.4,ꢀꢀ2019-10-31
OptiMOS
TM
ꢀPower-MOSFET,ꢀ30ꢀV
BSC0901NSI
Diagramꢀ13:ꢀAvalancheꢀcharacteristics
Diagramꢀ14:ꢀTyp.ꢀgateꢀcharge
10
2
12
10
8
25 °C
100 °C
125 °C
10
1
6
10
0
4
2
10
-1
0
10
0
10
1
10
2
10
3
0
10
20
30
40
50
t
AV
ꢀ[µs]
Q
gate
ꢀ[nC]
I
AS
=f(
t
AV
);ꢀ
R
GS
=25ꢀ
Ω
;ꢀparameter:ꢀ
T
j(start)
V
GS
=f(
Q
gate
);ꢀ
I
D
=30ꢀAꢀpulsed;ꢀparameter:ꢀ
V
DD
Diagramꢀ15:ꢀTyp.ꢀdrain-sourceꢀleakageꢀcurrent
Diagram Gate charge waveforms
10
-2
10
-3
125 °C
100 °C
10
-4
75 °C
10
-5
25 °C
10
-6
0
5
10
15
20
25
V
DS
ꢀ[V]
I
DSS
=f(
V
DS
);ꢀ
V
GS
=0ꢀV;ꢀparameter:ꢀ
T
j
Final Data Sheet
9
Rev.ꢀ2.4,ꢀꢀ2019-10-31
OptiMOS
TM
ꢀPower-MOSFET,ꢀ30ꢀV
BSC0901NSI
5ꢀꢀꢀꢀꢀPackageꢀOutlines
DOCUMENT NO.
Z8B00003332
REVISION
07
MILLIMETERS
DIMENSION
MIN.
0.90
0.15
0.34
4.80
3.90
0.03
5.70
5.90
3.88
MAX.
1.20
0.35
0.54
5.35
4.40
0.23
6.10
6.42
4.31
SCALE 10:1
A
A1
b
3mm
0
1
2
D
D1
D2
E
EUROPEAN PROJECTION
E1
E2
e
1.27
L
0.45
0.45
0.71
0.69
ISSUE DATE
06.06.2019
M
Figureꢀ1ꢀꢀꢀꢀꢀOutlineꢀPG-TDSON-8,ꢀdimensionsꢀinꢀmm
Final Data Sheet
10
Rev.ꢀ2.4,ꢀꢀ2019-10-31
OptiMOS
TM
ꢀPower-MOSFET,ꢀ30ꢀV
BSC0901NSI
Dimension in mm
Figureꢀ2ꢀꢀꢀꢀꢀOutlineꢀTapeꢀ(TDSON-8)
Final Data Sheet
11
Rev.ꢀ2.4,ꢀꢀ2019-10-31
OptiMOS
TM
ꢀPower-MOSFET,ꢀ30ꢀV
BSC0901NSI
PG-TDSON-8: Recommen
de
d Bo
a
rdpads & Apertures
1.905
1.905
1.27
3x
0.6
1.27
3x
0.5
1.6
0.2
1.5
0.5
1.27
3x
1.27
3x
0.4
1.905
1.905
copper
solder mask
stencil apertures
all dimensions in mm
Figure 3
Outline Boardpads (TDSON-8), dimensions in mm
Final Data Sheet
12
Rev.ꢀ2.4,ꢀꢀ2019-10-31
OptiMO
S
TM
Power-MOSFET , 30 V
BSC0901NSI
Revision History
BSC0901NSI
Revision: 2019-10-31, Rev. 2.4
Previous Revision
Revision Date
Subjects (major changes since last revision)
Update package drawings and add max. Capacitances and Charges
2.4
2019-10-31
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Final Data Sheet
13
Rev. 2.4,
2019-10-31
