Infineon-Technologies-BSC0902NS
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BSC0902NS
Opti
MOS
TM
Power-MOSFET
Product Summary
Features
V
DS
30
V
• Optimized for high performance Buck converter
• Very low on-resistance
R
DS(on)
@
V
GS
=4.5 V
• 100% avalanche tested
R
DS(on),max
I
D
2.6
100
16
m
W
A
Q
OSS
nC
nC
• Superior thermal resistance
Q
G
(0V..10V)
26
• N-channel
• Qualified according to JEDEC
1)
for target applications
• Pb-free lead
plating; RoHS compliant
• Halogen-free according to IEC61249-2-21
PG-TDSON-8
Type
Package
Marking
0902NS
BSC0902NS
PG-TDSON-8
Maximum ratings,
at
T
j
=25 °C, unless otherwise specified
Value
Parameter
Symbol Conditions
Unit
I
D
V
GS
=10 V,
T
C
=25 °C
V
GS
=10 V,
T
C
=100 °C
Continuous drain current
100
67
A
V
GS
=4.5 V,
T
C
=25 °C
91
V
GS
=4.5 V,
T
C
=100 °C
58
24
V
GS
=10 V,
T
A
=25 °C,
R
thJA
=50 K/W
2)
Pulsed drain current
3)
I
D,pulse
I
AS
T
C
=25 °C
400
50
Avalanche current, single pulse
4)
Avalanche energy, single pulse
Gate source voltage
T
C
=25 °C
E
AS
V
GS
I
D
=40 A,
R
GS
=25
W
40
mJ
V
±
20
1)
J-STD20 and JESD22
Rev. 2.2
page 1
2013-05-14
BSC0902NS
Maximum ratings,
at
T
j
=25 °C, unless otherwise specified
Value
Parameter
Symbol Conditions
Unit
P
tot
T
C
=25 °C
Power dissipation
48
W
T
A
=25 °C,
R
thJA
=50 K/W
2)
2.5
T
j
,
T
stg
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
-55 … 150
55/150/56
°C
Values
typ.
Parameter
Symbol Conditions
Unit
min.
max.
Thermal characteristics
R
thJC
Thermal resistance, junction – case
–
–
–
–
–
–
2.6
20
50
K/W
top
6 cm
2
cooling area
2)
R
thJA
Device on PCB
Electrical characteristics,
at
T
j
=25 °C, unless otherwise specified
Static characteristics
V
(BR)DSS
V
GS
=0 V,
I
D
=1 mA
V
GS(th)
V
DS
=
V
GS
,
I
D
=250 µA
Drain-source breakdown voltage
Gate threshold voltage
30
–
–
–
V
1.2
2
V
DS
=30 V,
V
GS
=0 V,
T
j
=25 °C
I
DSS
Zero gate voltage drain current
–
–
0.1
10
1
µA
V
DS
=30 V,
V
GS
=0 V,
T
j
=125 °C
100
I
GSS
V
GS
=20 V,
V
DS
=0 V
Gate-source leakage current
–
–
10
2.8
2.2
0.9
100 nA
R
DS(on)
V
GS
=4.5 V,
I
D
=30 A
V
GS
=10 V,
I
D
=30 A
R
G
Drain-source on-state resistance
3.5
2.6
1.8
m
W
–
Gate resistance
0.5
W
|
V
DS
|>2|
I
D
|
R
DS(on)max
I
D
=30 A
,
g
fs
Transconductance
55
110
–
S
2)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
3)
See figure 3 for more detailed information
Rev. 2.2
page 2
2013-05-14
BSC0902NS
Values
typ.
Parameter
Symbol Conditions
Unit
min.
max.
Dynamic characteristics
C
iss
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
–
–
–
–
–
–
–
1700
600
88
2261 pF
V
GS
=0 V,
V
DS
=15 V,
f
=1 MHz
C
oss
C
rss
t
d(on)
t
r
798
–
4.2
5.2
21
–
–
–
–
ns
V
DD
=15 V,
V
GS
=10 V,
I
D
=30 A,
R
G,ext
=1.6
W
t
d(off)
t
f
Turn-off delay time
Fall time
3.6
Gate Charge Characteristics
5)
Gate to source charge
Gate charge at threshold
Gate to drain charge
Switching charge
Q
gs
–
–
–
–
–
–
4.4
2.7
4.0
5.6
13
5.9
–
nC
Q
g(th)
Q
gd
5.2
–
V
DD
=15 V,
I
D
=30 A,
V
GS
=0 to 4.5 V
Q
sw
Q
g
Gate charge total
17
–
V
plateau
Gate plateau voltage
2.6
V
V
DD
=15 V,
I
D
=30 A,
V
GS
=0 to 10 V
Q
g
Gate charge total
–
26
35
nC
V
DS
=0.1 V,
V
GS
=0 to 4.5 V
Q
g(sync)
Gate charge total, sync. FET
–
–
11
16
–
Q
oss
V
DD
=15 V,
V
GS
=0 V
Output charge
21
Reverse Diode
I
S
Diode continuous forward current
Diode pulse current
–
–
–
–
44
A
T
C
=25 °C
I
S,pulse
175
V
GS
=0 V,
I
F
=30 A,
T
j
=25 °C
V
SD
Diode forward voltage
–
–
0.83
15
1
–
V
V
R
=15 V,
I
F
=
I
S
,
d
i
F
/d
t
=400 A/µs
Q
rr
Reverse recovery charge
nC
4)
See figure 13 for more detailed information
5)
See figure 16 for gate charge parameter definition
Rev. 2.2
page 3
2013-05-14
BSC0902NS
1 Power dissipation
2 Drain current
P
tot
=f(
T
C
)
I
D
=f(
T
C
);
V
GS
≥10 V
120
100
80
60
40
20
0
60
50
40
30
20
10
0
0
40
80
120
160
0
40
80
120
160
T
C
[
°
C]
T
C
[
°
C]
3 Safe operating area
I
D
=f(
V
DS
);
T
C
=25 °C;
D
=0
parameter:
t
p
4 Max. transient thermal impedance
Z
thJC
=f(
t
p
)
parameter:
D
=
t
p
/
T
10
3
10
1
limited by on-state
resistance
1 µs
10 µs
10
2
100 µs
0.5
10
0
1 ms
10 ms
0.2
0.1
10
1
DC
0.05
10
-1
0.02
10
0
0.01
single pulse
10
-1
10
-2
10
-1
10
0
10
1
10
2
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
V
DS
[V]
t
p
[s]
Rev. 2.2
page 4
2013-05-14
BSC0902NS
5 Typ. output characteristics
I
D
=f(
V
DS
);
T
j
=25 °C
6 Typ. drain-source on resistance
R
DS(on)
=f(
I
D
);
T
j
=25 °C
parameter:
V
GS
parameter:
V
GS
400
4
10 V
5 V
8 V
3.5
4.5 V
300
200
100
0
3
4.5 V
5 V
2.5
8 V
10 V
2
1.5
1
3.3 V
0.5
0
0
1
2
3
0
10
20
30
40
50
V
DS
[V]
I
D
[A]
7 Typ. transfer characteristics
I
D
=f(
V
GS
); |
V
DS
|>2|
I
D
|
R
DS(on)max
parameter:
T
j
8 Typ. forward transconductance
g
fs
=f(
I
D
);
T
j
=25 °C
400
320
240
160
200
150
100
50
80
150 °C
25 °C
0
0
0
1
2
3
4
5
0
20
40
60
80
100
V
GS
[V]
I
D
[A]
Rev. 2.2
page 5
2013-05-14
BSC0902NS
9 Drain-source on-state resistance
10 Typ. gate threshold voltage
R
DS(on)
=f(
T
j
);
I
D
=30 A;
V
GS
=10 V
V
GS(th)
=f(
T
j
);
V
GS
=
V
DS
;
I
D
=250 µA
4
3.5
3
2.5
2
2.5
typ
2
1.5
1
1.5
1
0.5
0
0.5
0
-60
-20
20
60
100
140
180
-60
-20
20
60
100
140
180
T
j
[
°
C]
T
j
[
°
C]
11 Typ. capacitances
12 Forward characteristics of reverse diode
I
F
=f(
V
SD
C
=f(
V
DS
);
V
GS
=0 V;
f
=1 MHz
)
parameter:
T
j
10000
10
4
10
3
Ciss
10
2
10
1
10
0
1000
10
3
Coss
150 °C
25 °C
100
Crss
10
2
10
-1
0
10
10
1
0.5
1
1.5
0
5
10
15
V
DS
[V]
20
25
V
SD
[V]
Rev. 2.2
page 6
2013-05-14
BSC0902NS
13 Avalanche characteristics
14 Typ. gate charge
V
GS
=f(
Q
gate
);
I
D
=30 A pulsed
parameter:
V
DD
I
AS
=f(
t
AV
);
R
GS
=25
W
parameter:
T
j(start)
100
12
10
8
15 V
6 V
24 V
25 °C
100 °C
125 °C
10
6
4
2
1
0
1
10
100
1000
0
10
20
30
t
AV
[µs]
Q
gate
[nC]
15 Drain-source breakdown voltage
16 Gate charge waveforms
V
BR(DSS)
=f(
T
j
);
I
D
=1 mA
34
32
30
28
26
24
22
20
V
GS
Q
g
V
gs(th)
Q
g(th)
Q
sw
Q
gd
Q
gate
Q
gs
-60
-20
20
60
100
140
180
T
j
[
°
C]
Rev. 2.2
page 7
2013-05-14
BSC0902NS
Package Outline
PG-TDSON-8
PG-TDSON-8: Outline
Rev. 2.2
page 8
2013-05-14
BSC0902NS
Package Outline
PG-TDSON-8: Tape
Dimensions in mm
Rev. 2.2
page 9
2013-05-14
BSC0902NS
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2010 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of
conditions or characteristics. With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device,
Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please
Warnings
Due to technical requirements, components may contain dangerous substances. For information
on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with
the express written approval of Infineon Technologies, if a failure of such components can
reasonably be expected to cause the failure of that life-support device or system or to affect
the safety or effectiveness of that device or system. Life support devices or systems are
intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user
or other persons may be endangered.
Rev. 2.2
page 10
2013-05-14
