Infineon-Technologies-BSC0910NDI
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BSC0910NDI
Q2
Dual N-Channel OptiMOS™ MOSFET
Product Summary
Features
Q1
25
• Dual N-channel OptiMOS™ MOSFET
V
DS
25
1.2
1.6
40
V
• Optimized for high performance Buck converter
R
DS(on),max
V
GS
=10 V
V
GS
=4.5 V
4.6
5.9
40
m
W
•
Logic level (4.5V rated)
• 100% avalanche tested
I
D
A
• Qualified according to JEDEC
1)
for target applications
• Pb-free lead
plating; RoHS compliant
• Halogen-free according to IEC61249-2-21
• Integrated monolithic Schottky-like diode
VPhase
Type
Package
Marking
BSC0910NDI
PG-TISON-8
0910NDI
Maximum ratings,
at
T
j
=25 °C, unless otherwise specified
2)
Value
Parameter
Symbol Conditions
Unit
Q1
Q2
I
D
T
C
=70 °C,
V
GS
=10 V
Continuous drain current
40
40
A
T
A
=25 °C,
V
GS
=4.5 V
3)
16
31
25
T
A
=70 °C,
V
GS
=4.5 V
3)
13
T
A
=25 °C,
V
GS
=10 V
4)
T
C
=70 °C
11
22
Pulsed drain current
5)
I
D,pulse
E
AS
160
160
Q1:
I
D
=20 A,
Q2:
I
D
=20 A,
R
GS
=25
W
Avalanche energy, single pulse
12
80
mJ
V
GS
P
tot
±
20
Gate source voltage
Power dissipation
V
T
A
=25 °C
2)
2.5
1.0
2.5
1.0
W
T
A
=25 °C, minimum
footprint
4)
T
j
,
T
stg
-55 … 150
55/150/56
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
°C
Rev.2.0
page 1
2013-11-27
BSC0910NDI
Values
typ.
Parameter
Symbol Conditions
Unit
min.
max.
Thermal characteristics
R
thJC
Q1
Q2
Q1
Q2
Q1
Q2
–
–
–
–
4.5
1.5
K/W
Thermal resistance, junction –
case
R
thJA
Thermal resistance, junction –
ambient
1)
6 cm
2
cooling area
3)
–
–
–
–
50
minimal footprint,
steady state
4)
125
Electrical characteristics,
at
T
j
=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
Q1
V
(BR)DSS
V
GS
=0 V,
I
D
=10 mA
25
–
–
15
–
–
–
V
Q2
Q1
Q2
Q1
d
V
(BR)DSS
/d
T
j
I
D
=10 mA, referenced
to 25 °C
Breakdown voltage temperature
coefficient
mV/K
Gate threshold voltage
V
GS(th)
V
DS
=
V
GS
,
I
D
=250 µA
1
2
V
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
I
DSS
Zero gate voltage drain current
–
–
–
–
–
–
1
500
0.1
–
µA
V
DS
=20 V,
V
GS
=0 V,
T
j
=25 °C
–
mA
V
DS
=20 V,
V
GS
=0 V,
T
j
=150 °C
3
I
GSS
Gate-source leakage current
V
GS
=20 V,
V
DS
=0 V
–
–
100 nA
R
DS(on)
–
–
4.7
1.25
3.5
0.9
0.8
0.7
84
5.9
1.6
4.6
1.2
1.6
1.4
–
m
W
Drain-source on-state
resistance
V
GS
=4.5 V,
I
D
=25 A
–
V
GS
=10 V,
I
D
=25 A
–
R
G
Gate resistance
0.4
0.4
42
85
W
g
fs
Transconductance
S
|
V
DS
|>2|
I
D
|
R
DS(on)max
,
I
D
=30 A
170
–
Rev.2.0
page 2
2013-11-27
BSC0910NDI
Values
typ.
Parameter
Symbol Conditions
Unit
min.
max.
Dynamic characteristics
C
iss
Input capacitance
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
–
–
–
–
–
–
–
–
–
–
–
–
–
–
760
3400
370
1700
35
1000 pF
4500
500
2300
–
C
oss
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
V
GS
=0 V,
V
DS
= 12 V,
f
=1 MHz
C
rss
t
d(on)
t
r
150
2.4
–
–
–
–
–
–
–
–
–
ns
5.6
3.6
V
DD
=12 V,
V
GS
=10 V,
R
G
=1.6
W
,
I
D
=30 A
5.6
t
d(off)
Turn-off delay time
Fall time
13
28
t
f
2.4
4.1
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Switching charge
Q
gs
Q1
Q2
–
–
–
–
–
–
1.9
1.2
5.0
2.5
8.1
5.6
23
2.5
1.8
6.6
–
nC
V
Q
gd
Q
g
V
DD
=12 V,
I
D
=30 A,
V
GS
=0 to 4.5 V
V
plateau
Q
gs
Gate plateau voltage
Gate to source charge
Gate to drain charge
Switching charge
10.8 nC
8.4
Q
gd
Q
g
30.6
V
plateau
Q
oss
Gate plateau voltage
Output charge
–
–
–
2.4
8
–
V
Q1
Q2
10.6 nC
48
V
DD
=12 V,
V
GS
=0 V
36
Rev.2.0
page 3
2013-11-27
BSC0910NDI
Values
typ.
Parameter
Symbol Conditions
Unit
min.
max.
Reverse Diode
Diode continuous forward current
I
S
Q1
Q2
Q1
Q2
–
–
–
–
–
–
–
–
28
40
A
V
T
C
=25 °C
I
S,pulse
Diode pulse current
160
160
V
GS
=0 V,
I
F
=20 A,
T
j
=25 °C
V
SD
Diode forward voltage
Q1
Q2
–
–
0.87
0.56
1
V
GS
=0 V,
I
F
=10 A,
T
j
=25 °C
0.7
Q
rr
Reverse recovery charge
Q1
Q2
–
–
5
5
–
–
nC
nC
V
R
=12 V,
I
F
=10 A,
d
i
F
/d
t
=400 A/µs
1)
J-STD20 and JESD22
2)
One transistor active
3)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is
4)
Device mounted on a minimum pad (one layer, 70 µm thick). One transistor active.
5)
See figure 3 for more detailed information.
Rev.2.0
page 4
2013-11-27
BSC0910NDI
1 Power dissipation (Q1)
2 Power dissipation (Q2)
P
tot
=f(
T
A
)
3)
P
tot
=f(
T
A
)
3)
1.2
1
1.2
1
0.8
0.6
0.4
0.2
0
0.8
0.6
0.4
0.2
0
0
40
80
120
160
0
40
80
120
160
T
A
[
°
C]
T
A
[
°
C]
3 Drain current (Q1)
I
D
=f(
T
C
)
4 Drain current (Q2)
I
D
=f(
T
C
)
parameter:
V
GS
≥10 V
parameter:
V
GS
≥10 V
50
40
30
20
10
0
50
40
30
20
10
0
0
40
80
120
160
0
40
80
120
160
T
C
[
°
C]
T
C
[
°
C]
Rev.2.0
page 5
2013-11-27
BSC0910NDI
5 Safe operating area (Q1)
I
D
=f(
V
DS
);
T
C
=25 °C;
D
=0
parameter:
t
p
6 Safe operating area (Q2)
I
D
=f(
V
DS
);
T
C
=25 °C;
D
=0
parameter:
t
p
10
3
10
3
1 µs
1 µs
10 µs
10
2
10
2
10 µs
100 µs
100 µs
1 ms
1 ms
10 ms
10
1
10
1
10 ms
DC
DC
10
0
10
0
10
-1
10
-1
10
-1
10
0
10
1
10
2
10
-1
10
0
10
1
10
2
V
DS
[V]
V
DS
[V]
7 Max. transient thermal impedance (Q1)
Z
thJC
=f(
t
p
)
8 Max. transient thermal impedance (Q2)
Z
thJC
=f(
t
p
)
parameter:
D
=
t
p
/
T
parameter:
D
=
t
p
/
T
10
1
10
1
0.5
10
0
0.5
0.2
0.2
10
0
0.1
0.1
0.05
0.05
10
-1
0.02
0.01
0.02
0.01
single pulse
single pulse
10
-1
10
-2
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
t
p
[s]
t
p
[s]
Rev.2.0
page 6
2013-11-27
BSC0910NDI
9 Typ. output characteristics (Q1)
I
D
=f(
V
DS
);
T
j
=25 °C
10 Typ. output characteristics (Q2)
I
D
=f(
V
DS
);
T
j
=25 °C
parameter:
V
GS
parameter:
V
GS
160
400
4 V
4.5 V
3.5 V
10 V
10 V
3.5 V
4.5 V
4 V
3.3 V
120
300
200
100
0
3.2 V
3 V
80
40
0
3 V
2.8 V
2.8 V
0
1
2
3
0
1
2
3
V
DS
[V]
V
DS
[V]
11 Typ. drain-source on resistance (Q1)
R
DS(on)
=f(
I
D
);
T
j
=25 °C
12 Typ. drain-source on resistance (Q2)
R
DS(on)
=f(
I
D
);
T
j
=25 °C
parameter:
V
GS
parameter:
V
GS
8
3
7
3.3 V
2.5
3.5 V
6
3 V
4 V
2
5
4.5 V
3.3 V
5 V
3.5 V
4
1.5
4 V
4.5 V
10 V
5 V
3
2
1
0
1
0.5
0
10 V
0
20
40
60
0
20
40
60
80
I
D
[A]
I
D
[A]
Rev.2.0
page 7
2013-11-27
BSC0910NDI
13 Typ. transfer characteristics (Q1)
I
D
=f(
V
GS
);
|
V
DS
|>2 |
I
D
|
R
DS(on)max
parameter:
T
j
14 Typ. transfer characteristics (Q2)
I
D
=f(
V
GS
);
|
V
DS
|>2 |
I
D
| R
DS(on)max
parameter:
T
j
160
120
80
160
120
80
25 °C
150 °C
40
40
150 °C
25 °C
0
0
0
1
2
3
4
0
1
2
3
4
V
GS
[V]
V
GS
[V]
15 Drain-source on-state resistance (Q1)
16 Drain-source on-state resistance (Q2)
R
DS(on)
=f(
T
j
);
I
D
=25 A;
V
GS
=10 V
R
DS(on)
=f(
T
j
);
I
D
=25 A;
V
GS
=10 V
8
7
6
5
2.5
2
1.5
4
typ
1
typ
3
2
1
0
0.5
0
-60
-20
20
60
100
140
180
-60
-20
20
60
100
140
180
T
j
[
°
C]
T
j
[
°
C]
Rev.2.0
page 8
2013-11-27
BSC0910NDI
17 Typ. gate threshold voltage (Q1)
18 Typ. gate threshold voltage (Q2)
V
GS(th)
=f(
T
j
);
V
GS
=
V
DS
;
I
D
=250 µA
V
GS(th)
=f(
T
j
);
V
GS
=
V
DS
;
I
D
=10 mA
2.8
2.4
2
2.8
2.4
2
1.6
1.2
0.8
0.4
0
1.6
1.2
0.8
0.4
0
-60
-20
20
60
100
140
180
-60
-20
20
60
100
140
180
T
j
[
°
C]
T
j
[
°
C]
19 Typ. capacitances (Q1)
20 Typ. capacitances (Q2)
C
=f(
V
DS
);
V
GS
=0 V;
f
=1 MHz
C
=f(
V
DS
);
V
GS
=0 V;
f
=1 MHz
10
4
10
3
10
2
10
1
10
4
Ciss
Coss
10
3
Ciss
Coss
Crss
10
2
Crss
10
1
0
5
10
15
20
25
0
5
10
15
20
25
V
DS
[V]
V
DS
[V]
Rev.2.0
page 9
2013-11-27
BSC0910NDI
21 Forward characteristics of reverse diode (Q1)
22 Forward characteristics of reverse diode (Q2)
I
F
=f(
V
SD
)
I
F
=f(
V
SD
)
parameter:
T
j
parameter:
T
j
10
3
10
3
100 °C
150 °C
10
2
10
1
10
0
10
2
10
1
10
0
25 °C
-55 °C
150 °C
25 °C
10
-1
0
10
-1
0
0.2
0.4
0.6
0.8
1
1.2
0.2
0.4
0.6
0.8
1
V
SD
[V]
V
SD
[V]
23 Avalanche characteristics (Q1)
24 Avalanche characteristics (Q2)
I
AS
=f(
t
AV
);
R
GS
=25
W
parameter:
T
j(start)
I
AS
=f(
t
AV
);
R
GS
=25
W
parameter:
T
j(start)
10
2
10
2
25 °C
25 °C
100 °C
125 °C
10
1
10
1
100 °C
125 °C
10
0
10
0
10
0
10
1
10
2
10
3
10
0
10
1
10
2
10
3
t
AV
[µs]
t
AV
[µs]
Rev.2.0
page 10
2013-11-27
BSC0910NDI
25 Typ. gate charge (Q1)
V
GS
=f(
Q
gate
);
I
D
=20 A pulsed
parameter:
V
DD
26 Typ. gate charge (Q2)
V
GS
=f(
Q
gate
);
I
D
=20 A pulsed
parameter:
V
DD
10
10
8
8
12 V
20 V
12 V
20 V
5 V
5 V
6
6
4
4
2
2
0
0
0
2
4
6
8
10
12
0
10
20
30
40
50
Q
gate
[nC]
Q
gate
[nC]
27 Drain-source breakdown voltage (Q1)
28 Typ. drain-source leakage current (Q2)
I
DSS
=f(
V
DS
);
V
GS
=0 V
V
BR(DSS)
=f(
T
j
);
I
D
=1 mA
parameter:
T
j
10
-2
30
29
28
27
26
25
24
23
22
21
20
10
-3
125 °C
100 °C
10
-4
75 °C
10
-5
25 °C
10
-6
-60
-20
20
60
100
140
180
0
5
10
15
20
T
j
[
°
C]
V
DSj
[V]
Rev.2.0
page 11
2013-11-27
BSC0910NDI
PG-TISON
Rev.2.0
page 12
2013-11-27
BSC0910NDI
PG-TISON-8
Rev.2.0
page 13
2013-11-27
BSC0910NDI
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2013 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of
conditions or characteristics. With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device,
Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please
contact the nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information
on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with
the express written approval of Infineon Technologies, if a failure of such components can
reasonably be expected to cause the failure of that life-support device or system or to affect
the safety or effectiveness of that device or system. Life support devices or systems are
intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user
or other persons may be endangered.
Rev.2.0
page 14
2013-11-27
