Infineon-Technologies-BSC0924NDI
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BSC0924NDI
Dual N-Channel OptiMOS™ MOSFET
Product Summary
Features
Q1
30
5
Q2
• Dual N-channel OptiMOS™ MOSFET
V
DS
30
3.7
5.2
40
V
• Integrated
monolithic Schottky-like diode
R
DS(on),max
V
GS
=10 V
V
=4.5 V
m
W
• Optimized for high performance Buck converter
7
•
Logic level (4.5V rated)
I
40
A
• 100% avalanche tested
• Qualified according to JEDEC
1)
for target applications
• Pb-free lead
plating; RoHS compliant
VPhase
• Halogen-free according to IEC61249-2-22
Type
Package
Marking
PG-TISON-8
BSC0924NDI
0924NDI
Maximum ratings,
at
T
j
=25 °C, unless otherwise specified
2)
Value
Parameter
Symbol Conditions
Unit
Q1
Q2
I
D
T
C
=70 °C, V
GS
=10V
Continuous drain current
40
40
A
T
A
=25 °C, V
GS
=4.5V
3)
T
A
=70 °C, V
GS
=4.5V
3)
T
A
=25 °C, V
GS
=10V
4)
T
C
=70 °C
17
14
10
32
25
13
Pulsed drain current
5)
I
D,pulse
E
AS
160
160
Q1:
I
D
=20 A,
Q2:
I
D
=20 A,
R
GS
=25
W
Avalanche energy, single pulse
9
10
mJ
V
GS
P
tot
±
20
Gate source voltage
Power dissipation
V
T
A
=25 °C
2)
2.5
1.0
2.5
1.0
W
T
A
=25 °C, minimum
footprint
3)
T
j
,
T
stg
-55 … 150
55/150/56
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
°C
1)
J-STD20 and JESD22
2)
One transistor active
3)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is
vertical in still air.
4)
Device mounted on a minimum pad (one layer, 70 µm thick). One transistor active
See figure 3 for more detailed information.
5)
Rev.2.0
page 1
2013-07-30
BSC0924NDI
Values
typ.
Parameter
Symbol Conditions
Unit
min.
max.
Thermal characteristics
R
thJC
Q1
Q2
Q1
Q2
Q1
–
–
–
–
4.2
3.4
K/W
Thermal resistance, junction –
case
R
thJA
Thermal resistance, junction –
ambient
1)
6 cm
2
cooling area
2)
–
–
–
–
50
minimal footprint,
steady state
3)
125
Q2
Electrical characteristics,
at
T
j
=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
Q1
V
(BR)DSS
V
GS
=0 V,
I
D
=10 mA
30
–
–
15
–
–
–
V
Q2
Q1
Q2
Q1
Q2
Q1
d
V
(BR)DSS
/d
T
j
I
D
=10 mA, referenced
to 25 °C
Breakdown voltage temperature
coefficient
mV/K
Gate threshold voltage
V
GS(th)
V
DS
=
V
GS
,
I
D
=250 µA
1.2
2
V
I
DSS
Zero gate voltage drain current
–
–
–
–
–
–
1
500
0.1
–
µA
V
DS
=24 V,
V
GS
=0 V,
T
j
=25 °C
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
–
mA
V
DS
=24 V,
V
GS
=0 V,
T
j
=150 °C
3
I
GSS
Gate-source leakage current
V
GS
=20 V,
V
DS
=0 V
–
–
100 nA
R
DS(on)
–
–
5.4
4.2
3.8
2.8
2.6
0.9
65
7.0
5.2
5.0
3.7
5.2
1.8
–
m
W
Drain-source on-state
resistance
V
GS
=4.5 V,
I
D
=20 A
–
V
GS
=10 V,
I
D
=20 A
–
R
G
Gate resistance
1.3
0.5
32
W
g
fs
Transconductance
S
|
V
DS
|>2|
I
D
|
R
DS(on)max
,
I
D
=20 A
Q2
36
71
–
Rev.2.0
page 2
2013-07-30
BSC0924NDI
Values
typ.
Parameter
Symbol Conditions
Unit
min.
max.
Dynamic characteristics
C
iss
Input capacitance
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
–
–
–
–
–
–
–
–
–
–
–
–
–
–
870
1100
330
460
49
1160 pF
1470
C
oss
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
439
V
GS
=0 V,
V
DS
= 15 V,
f
=1 MHz
612
C
rss
t
d(on)
t
r
–
64
–
4.7
3.3
3.8
2.8
17
ns
–
–
V
DD
=15 V,
V
GS
=10 V,
R
G
=1.6
W
,
I
D
=20 A
–
t
d(off)
Turn-off delay time
Fall time
–
15
–
t
f
3.0
2.2
–
–
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Q
gs
Q1
Q2
–
–
–
–
–
–
2.4
2.2
6.7
2.8
2.9
2.9
8.5
2.7
9
3.2
2.9
10
nC
Q
gd
Q
g
V
DD
=15 V,
I
D
=30 A,
V
GS
=0 to 4.5 V
V
plateau
Q
gs
Gate plateau voltage
Gate to source charge
Gate to drain charge
Gate charge total
–
V
3.9
3.8
12.8
nC
Q
gd
Q
g
V
plateau
Q
oss
Gate plateau voltage
Output charge
V
Q1
Q2
–
–
12
16
nC
V
DD
=15 V,
V
GS
=0 V
12
Rev.2.0
page 3
2013-07-30
BSC0924NDI
Values
typ.
Parameter
Symbol Conditions
Unit
min.
max.
Reverse Diode
I
S
Diode continuous forward current
Q1
Q2
–
–
30
40
A
T
C
=25 °C
I
S,pulse
Diode pulse current
Q1
Q2
–
–
–
–
160
160
V
GS
=0 V,
I
F
=20 A,
T
j
=25 °C
V
SD
Diode forward voltage
Q1
Q2
–
–
0.86
0.56
1
V
V
GS
=0 V,
I
F
=3 A,
T
j
=25 °C
0.7
Q
rr
Reverse recovery charge
Q1
Q2
–
–
5
5
–
–
nC
V
R
=15 V,
I
F
=
I
S
,
d
i
F
/d
t
=100 A/µs
2)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
3)
device mounted on a minimum pad (one layer, 70 µm thick)
Rev.2.0
page 4
2013-07-30
BSC0924NDI
1 Power dissipation (Q1)
2 Power dissipation (Q2)
P
tot
=f(
T
A
)
3)
P
tot
=f(
T
A
)
3)
1.2
1
1.2
1
0.8
0.6
0.4
0.2
0
0.8
0.6
0.4
0.2
0
0
40
80
120
160
0
40
80
120
160
T
A
[
°
C]
T
A
[
°
C]
3 Drain current (Q1)
I
D
=f(
T
C
)
4 Drain current (Q2)
I
D
=f(
T
C
)
parameter:
V
GS
≥10 V
parameter:
V
GS
≥10 V
50
40
30
20
10
0
50
40
30
20
10
0
0
40
80
120
160
0
40
80
120
160
T
C
[
°
C]
T
C
[
°
C]
Rev.2.0
page 5
2013-07-30
BSC0924NDI
5 Safe operating area (Q1)
I
D
=f(
V
DS
);
T
C
=25 °C;
D
=0
parameter:
t
p
6 Safe operating area (Q2)
I
D
=f(
V
DS
);
T
C
=25 °C;
D
=0
parameter:
t
p
10
3
10
2
10
1
10
3
10
2
10
1
1 µs
1 µs
10 µs
10 µs
100 µs
100 µs
1 ms
1 ms
10 ms
DC
10 ms
DC
10
0
10
0
10
-1
10
-1
10
-1
10
0
10
1
10
2
10
-1
10
0
10
1
10
2
V
DS
[V]
V
DS
[V]
7 Max. transient thermal impedance (Q1)
Z
thJC
=f(
t
p
)
8 Max. transient thermal impedance (Q2)
Z
thJC
=f(
t
p
)
parameter:
D
=
t
p
/
T
parameter:
D
=
t
p
/
T
10
1
10
1
0.5
10
0
0.2
0.5
0.1
0.2
0.05
10
0
0.02
0.1
0.01
0.05
10
-1
single pulse
0.02
0.01
single pulse
10
-1
10
-2
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
t
p
[s]
t
p
[s]
Rev.2.0
page 6
2013-07-30
BSC0924NDI
9 Typ. output characteristics (Q1)
I
D
=f(
V
DS
);
T
j
=25 °C
10 Typ. output characteristics (Q2)
I
D
=f(
V
DS
);
T
j
=25 °C
parameter:
V
GS
parameter:
V
GS
160
400
10 V
10 V
4.5 V
4 V
120
80
40
0
300
4.5 V
3.5 V
4 V
200
100
0
3.3 V
3.5 V
3.3 V
3 V
2.8 V
3 V
2.8 V
0
1
2
3
0
1
2
3
V
DS
[V]
V
DS
[V]
11 Typ. drain-source on resistance (Q1)
R
DS(on)
=f(
I
D
);
T
j
=25 °C
12 Typ. drain-source on resistance (Q2)
R
DS(on)
=f(
I
D
);
T
j
=25 °C
parameter:
V
GS
parameter:
V
GS
15
12
10
3 V
8
3.3 V
3.3 V
3 V
3.5 V
3.5 V
9
6
3
0
6
4
2
0
4 V
4 V
4.5 V
5 V
4.5 V
5 V
10 V
10 V
0
20
40
60
80
0
20
40
60
80
I
D
[A]
I
D
[A]
Rev.2.0
page 7
2013-07-30
BSC0924NDI
13 Typ. transfer characteristics (Q1)
I
D
=f(
V
GS
);
|
V
DS
|>2 |
I
D
|
R
DS(on)max
parameter:
T
j
14 Typ. transfer characteristics (Q2)
I
D
=f(
V
GS
);
|
V
DS
|>2 |
I
D
| R
DS(on)max
parameter:
T
j
160
120
80
160
120
80
40
40
150 °C
25 °C
25 °C
150 °C
0
0
0
1
2
3
4
0
1
2
3
4
V
GS
[V]
V
GS
[V]
15 Drain-source on-state resistance (Q1)
16 Drain-source on-state resistance (Q2)
R
DS(on)
=f(
T
j
);
I
D
=20 A;
V
GS
=10 V
R
DS(on)
=f(
T
j
);
I
D
=20 A;
V
GS
=10 V
9
8
7
6
5
4
typ
3
5
typ
4
2
1
0
3
2
1
0
-60
-20
20
60
100
140
180
-60
-20
20
60
100
140
180
T
j
[
°
C]
T
j
[
°
C]
Rev.2.0
page 8
2013-07-30
BSC0924NDI
17 Typ. gate threshold voltage (Q1)
18 Typ. gate threshold voltage (Q2)
V
GS(th)
=f(
T
j
);
V
GS
=
V
DS
;
I
D
=250 µA
V
GS(th)
=f(
T
j
);
V
GS
=
V
DS
;
I
D
=10 mA
2.8
2.4
2
2.8
2.4
2
1.6
1.2
0.8
0.4
0
1.6
1.2
0.8
0.4
0
-60
-20
20
60
100
140
180
-60
-20
20
60
100
140
180
T
j
[
°
C]
T
j
[
°
C]
19 Typ. capacitances (Q1)
20 Typ. capacitances (Q2)
C
=f(
V
DS
);
V
GS
=0 V;
f
=1 MHz
C
=f(
V
DS
);
V
GS
=0 V;
f
=1 MHz
10
4
10
3
10
2
10
1
10
4
Ciss
Ciss
10
3
Coss
Coss
10
2
Crss
Crss
10
1
0
10
20
30
0
10
20
30
V
DS
[V]
V
DS
[V]
Rev.2.0
page 9
2013-07-30
BSC0924NDI
21 Forward characteristics of reverse diode (Q1)
22 Forward characteristics of reverse diode (Q2)
I
F
=f(
V
SD
)
I
F
=f(
V
SD
)
parameter:
T
j
parameter:
T
j
10
3
10
3
150 °C
10
2
10
1
10
0
10
2
10
1
10
0
25 °C
150 °C
25 °C
100 °C
-55 °C
10
-1
0
10
-1
0
0.2
0.4
0.6
0.8
1
1.2
0.2
0.4
0.6
0.8
1
V
SD
[V]
V
SD
[V]
23 Avalanche characteristics (Q1)
24 Avalanche characteristics (Q2)
I
AS
=f(
t
AV
);
R
GS
=25
W
parameter:
T
j(start)
I
AS
=f(
t
AV
);
R
GS
=25
W
parameter:
T
j(start)
10
2
10
2
25 °C
10
1
10
1
25 °C
100 °C
100 °C
125 °C
125 °C
10
0
10
0
10
0
10
1
10
2
10
3
10
0
10
1
10
2
10
3
t
AV
[µs]
t
AV
[µs]
Rev.2.0
page 10
2013-07-30
BSC0924NDI
25 Typ. gate charge (Q1)
V
GS
=f(
Q
gate
);
I
D
=20 A pulsed
parameter:
V
DD
26 Typ. gate charge (Q2)
V
GS
=f(
Q
gate
);
I
D
=20 A pulsed
parameter:
V
DD
10
10
15 V
8
8
15 V
24 V
6 V
6 V
24 V
6
6
4
2
4
2
0
0
0
0
2
4
6
8
10
12
14
12
Q
gate
[nC]
24
Q
gate
[nC]
27 Drain-source breakdown voltage (Q1)
28 Typ. drain-source leakage current (Q2)
I
DSS
=f(
V
DS
);
V
GS
=0 V
V
BR(DSS)
=f(
T
j
);
I
D
=1 mA
parameter:
T
j
10
-2
35
34
33
32
31
30
29
28
27
26
25
10
-3
125 °C
10
-4
100 °C
75 °C
10
-5
25 °C
10
-6
-60
-20
20
60
100
140
180
0
5
10
15
20
25
T
j
[
°
C]
V
DSj
[V]
Rev.2.0
page 11
2013-07-30
BSC0924NDI
PG-TISON
Rev.2.0
page 12
2013-07-30
BSC0924NDI
PG-TISON
Rev.2.0
page 13
2013-07-30
BSC0924NDI
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2012 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of
conditions or characteristics. With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device,
Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please
contact the nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information
on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with
the express written approval of Infineon Technologies, if a failure of such components can
reasonably be expected to cause the failure of that life-support device or system or to affect
the safety or effectiveness of that device or system. Life support devices or systems are
intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user
or other persons may be endangered.
Rev.2.0
page 14
2013-07-30
