Infineon-Technologies-BSC13DN30NSFD
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BSC13DN30NSFD
MOSFET
OptiMOS
TM
3ꢀPower-Transistor,ꢀ300ꢀV
SuperSO8
5
8
6
7
7
Features
6
5
8
•ꢀN-channel,ꢀnormalꢀlevel
•ꢀ175ꢀ°Cꢀrated
•ꢀExcellentꢀgateꢀchargeꢀxꢀ
R
DS(on)
ꢀproductꢀ(FOM)
•ꢀVeryꢀlowꢀon-resistanceꢀ
R
DS(on)
•ꢀPb-freeꢀleadꢀplating;ꢀRoHSꢀcompliant
•ꢀQualifiedꢀaccordingꢀtoꢀJEDEC
1)
ꢀꢀforꢀtargetꢀapplication
•ꢀHalogen-freeꢀaccordingꢀtoꢀIEC61249-2-21
•ꢀIdealꢀforꢀhigh-frequencyꢀswitchingꢀandꢀsynchronousꢀrectification
4
3
1
2
2
3
1
4
Tableꢀ1ꢀꢀꢀꢀꢀKeyꢀPerformanceꢀParameters
S 1
8 D
7 D
Parameter
Value
300
130
16
Unit
S 2
S 3
G 4
V
DS
V
6 D
5 D
R
DS(on),max
I
D
m
Ω
A
Typeꢀ/ꢀOrderingꢀCode
Package
Marking
RelatedꢀLinks
BSC13DN30NSFD
PG-TDSON-8
13DN30NF
–
1)
J-STD20 and JESD22
Final Data Sheet
1
Rev.ꢀ2.1,ꢀꢀ2016-12-05
OptiMOS
TM
3ꢀPower-Transistor,ꢀ300ꢀV
BSC13DN30NSFD
TableꢀofꢀContents
Description .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Maximum ratings
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
3
Thermal characteristics
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
3
Electrical characteristics diagrams
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
5
Package Outlines
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Revision History
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
11
Trademarks .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
11
Disclaimer .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
11
Final Data Sheet
2
Rev.ꢀ2.1,ꢀꢀ2016-12-05
OptiMOS
TM
3ꢀPower-Transistor,ꢀ300ꢀV
BSC13DN30NSFD
1ꢀꢀꢀꢀꢀMaximumꢀratings
atꢀ
T
A
=25ꢀ°C,ꢀunlessꢀotherwiseꢀspecified
Tableꢀ2ꢀꢀꢀꢀꢀMaximumꢀratings
Values
Typ.
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
–
–
–
–
16
14
T
C
=25ꢀ°C
A
Continuous drain current
I
D
T
C
=100ꢀ°C
Pulsed drain current
1)
I
D,pulse
E
AS
–
–
–
–
64
56
A
T
C
=25ꢀ°C
Avalanche energy, single pulse
mJ
I
D
=14.4ꢀA,ꢀ
R
GS
=25ꢀ
Ω
I
D
=36ꢀA,ꢀ
V
DS
=150ꢀV,
d
i
/d
t
=1000ꢀA/µs,ꢀ
T
j,max
=175ꢀ°C
Reverseꢀdiodeꢀpeakꢀd
v
/d
t
d
v
/d
t
–
–
60
kV/µs
Gate source voltage
V
GS
-20
–
–
–
–
20
V
–
Power dissipation
P
tot
150
175
W
°C
T
C
=25ꢀ°C
Operating and storage temperature
T
j
,ꢀ
T
stg
-55
–
2ꢀꢀꢀꢀꢀThermalꢀcharacteristics
Tableꢀ3ꢀꢀꢀꢀꢀThermalꢀcharacteristics
Values
Typ.
0.6
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Thermal resistance, junction – case
R
thJC
R
thJA
–
1
K/W
K/W
–
–
Thermal resistance, junction
– ambient,
minimal footprint
–
–
–
–
75
50
Thermal resistance, junction
– ambient,
6 cm
2
cooling area
2)
R
thJA
K/W
–
3ꢀꢀꢀꢀꢀElectricalꢀcharacteristics
Tableꢀ4ꢀꢀꢀꢀꢀStaticꢀcharacteristics
Values
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
300
2
Typ.
Max.
Drain-source breakdown voltage
Gate threshold voltage
V
(BR)DSS
V
GS(th)
–
–
V
V
V
GS
=0ꢀV,ꢀ
I
D
=1ꢀmA
V
DS
=
V
GS
,ꢀ
I
D
=90ꢀµA
3
4
–
–
0.1
10
1
100
V
DS
=240ꢀV,ꢀ
V
GS
=0ꢀV,ꢀ
T
j
=25ꢀ°C
V
DS
=240ꢀV,ꢀ
V
GS
=0ꢀV,ꢀ
T
j
=125ꢀ°C
Zero gate voltage drain current
I
DSS
µA
nA
Gate-source leakage current
Drain-source on-state resistance
Gate resistance
I
GSS
R
DS(on)
R
G
–
1
100
130
5
V
GS
=20ꢀV,ꢀ
V
DS
=0ꢀV
–
114
3.3
38
m
Ω
V
GS
=10ꢀV,ꢀ
I
D
=16ꢀA
–
Ω
–
Transconductance
g
fs
19
–
S
|
V
DS
|>2|
I
D
|
R
DS(on)max
,ꢀ
I
D
=16ꢀA
1)
See Diagram 3
2)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm
2
(one layer, 70 µm thick) copper area for drain connection.
PCB is vertical in still air.
Final Data Sheet
3
Rev.ꢀ2.1,ꢀꢀ2016-12-05
OptiMOS
TM
3ꢀPower-Transistor,ꢀ300ꢀV
BSC13DN30NSFD
Tableꢀ5ꢀꢀꢀꢀꢀDynamicꢀcharacteristics
Values
Typ.
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Input capacitance
Output capacitance
1)
Reverse transfer capacitance
1)
C
iss
C
oss
C
rss
–
–
–
1840 2450 pF
V
GS
=0ꢀV,ꢀ
V
DS
=150ꢀV,ꢀ
f
=1ꢀMHz
V
GS
=0ꢀV,ꢀ
V
DS
=150ꢀV,ꢀ
f
=1ꢀMHz
V
GS
=0ꢀV,ꢀ
V
DS
=150ꢀV,ꢀ
f
=1ꢀMHz
76
102
–
pF
pF
5.4
V
DD
=150ꢀV,ꢀ
V
GS
=10ꢀV,ꢀ
I
D
=8ꢀA,
R
G,ext
=1.6ꢀ
Ω
Turn-on delay time
Rise time
t
d(on)
t
r
t
d(off)
t
f
–
–
–
–
8.0
4.0
19
–
–
–
–
ns
ns
ns
ns
V
DD
=150ꢀV,ꢀ
V
GS
=10ꢀV,ꢀ
I
D
=8ꢀA,
R
G,ext
=1.6ꢀ
Ω
V
DD
=150ꢀV,ꢀ
V
GS
=10ꢀV,ꢀ
I
D
=8ꢀA,
R
G,ext
=1.6ꢀ
Ω
Turn-off delay time
Fall time
V
DD
=150ꢀV,ꢀ
V
GS
=10ꢀV,ꢀ
I
D
=8ꢀA,
R
G,ext
=1.6ꢀ
Ω
4.0
Tableꢀ6ꢀꢀꢀꢀꢀGateꢀchargeꢀcharacteristics
2)
ꢀ
Values
Typ.
8.0
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Gate to source charge
Gate to drain charge
Switching charge
Gate charge total
1)
Gate plateau voltage
Output charge
Q
gs
–
–
–
–
–
–
–
nC
nC
nC
nC
V
V
DD
=150ꢀV,ꢀ
I
D
=16ꢀA,ꢀ
V
GS
=0ꢀtoꢀ10ꢀV
V
DD
=150ꢀV,ꢀ
I
D
=16ꢀA,ꢀ
V
GS
=0ꢀtoꢀ10ꢀV
V
DD
=150ꢀV,ꢀ
I
D
=16ꢀA,ꢀ
V
GS
=0ꢀtoꢀ10ꢀV
V
DD
=150ꢀV,ꢀ
I
D
=16ꢀA,ꢀ
V
GS
=0ꢀtoꢀ10ꢀV
V
DD
=150ꢀV,ꢀ
I
D
=16ꢀA,ꢀ
V
GS
=0ꢀtoꢀ10ꢀV
V
DD
=150ꢀV,ꢀ
V
GS
=0ꢀV
Q
gd
2.9
–
Q
sw
Q
g
5.4
–
23
30
–
V
plateau
Q
oss
4.4
48
–
nC
Tableꢀ7ꢀꢀꢀꢀꢀReverseꢀdiode
Values
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Typ.
–
Max.
16
Diode continous forward current
Diode pulse current
3)
Diode hard commutation current
4)
I
S
–
–
–
–
–
–
A
T
C
=25ꢀ°C
I
S,pulse
I
S,hard
V
SD
t
rr
–
64
A
T
C
=25ꢀ°C
–
16
A
T
C
=25ꢀ°C,ꢀ
d
i
F
/d
t
=1000ꢀA/µs
V
GS
=0ꢀV,ꢀ
I
F
=16ꢀA,ꢀ
T
j
=25ꢀ°C
V
R
=150ꢀV,ꢀ
I
F
=12.6A,ꢀd
i
F
/d
t
=100ꢀA/µs
V
R
=150ꢀV,ꢀ
I
F
=12.6A,ꢀd
i
F
/d
t
=100ꢀA/µs
Diode forward voltage
Reverse recovery time
1)
Reverse recovery charge
1)
0.9
111
249
1.2
222
498
V
ns
nC
Q
rr
1)
Defined by design. Not subject to production test
2)
See
″
Gate charge waveforms
″
for parameter definition
3)
Diode pulse current is defined by thermal and/or package limits
4)
Maximum allowed hard-commutated current through diode at di/dt=1000 A/µs
Final Data Sheet
4
Rev.ꢀ2.1,ꢀꢀ2016-12-05
OptiMOS
TM
3ꢀPower-Transistor,ꢀ300ꢀV
BSC13DN30NSFD
4ꢀꢀꢀꢀꢀElectricalꢀcharacteristicsꢀdiagrams
Diagramꢀ1:ꢀPowerꢀdissipation
Diagramꢀ2:ꢀDrainꢀcurrent
200
20
16
12
8
150
100
50
4
0
0
0
50
100
150
200
0
50
100
150
200
T
C
ꢀ[°C]
T
C
ꢀ[°C]
P
tot
=f(
T
C
)
I
D
=f(
T
C
);ꢀ
V
GS
≥
10ꢀV
Diagramꢀ3:ꢀSafeꢀoperatingꢀarea
Diagramꢀ4:ꢀMax.ꢀtransientꢀthermalꢀimpedance
10
2
10
1
1 µs
10 µs
100 µs
10
1
10
0
1 ms
0.5
10 ms
0.2
0.1
DC
10
0
10
-1
0.05
0.02
0.01
single pulse
10
-1
10
-2
10
-1
10
0
10
1
10
2
10
3
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
V
DS
ꢀ[V]
t
p
ꢀ[s]
I
D
=f(
V
DS
);ꢀ
T
C
=25ꢀ°C;ꢀ
D
=0;ꢀparameter:ꢀ
t
p
Z
thJC
=f(
t
p
);ꢀparameter:ꢀ
D
=
t
p
/
T
Final Data Sheet
5
Rev.ꢀ2.1,ꢀꢀ2016-12-05
OptiMOS
TM
3ꢀPower-Transistor,ꢀ300ꢀV
BSC13DN30NSFD
Diagramꢀ5:ꢀTyp.ꢀoutputꢀcharacteristics
Diagramꢀ6:ꢀTyp.ꢀdrain-sourceꢀonꢀresistance
40
260
240
220
200
180
160
10 V
30
7 V
5 V
4.5 V
140
5 V
7 V
10 V
20
120
100
80
60
40
20
0
4.5 V
10
0
0
1
2
3
4
5
0
10
20
30
V
DS
ꢀ[V]
I
D
ꢀ[A]
I
D
=f(
V
DS
);ꢀ
T
j
=25ꢀ°C;ꢀparameter:ꢀ
V
GS
R
DS(on)
=f(
I
D
);ꢀ
T
j
=25ꢀ°C;ꢀparameter:ꢀ
V
GS
Diagramꢀ7:ꢀTyp.ꢀtransferꢀcharacteristics
Diagramꢀ8:ꢀTyp.ꢀforwardꢀtransconductance
25
60
50
40
30
20
10
0
20
15
10
175 °C
5
25 °C
0
0
2
4
6
8
0
10
20
30
40
V
GS
ꢀ[V]
I
D
ꢀ[A]
I
D
=f(
V
GS
);ꢀ|
V
DS
|>2|
I
D
|
R
DS(on)max
;ꢀparameter:ꢀ
T
j
g
fs
=f(
I
D
);ꢀ
T
j
=25ꢀ°C
Final Data Sheet
6
Rev.ꢀ2.1,ꢀꢀ2016-12-05
OptiMOS
TM
3ꢀPower-Transistor,ꢀ300ꢀV
BSC13DN30NSFD
Diagramꢀ9:ꢀDrain-sourceꢀon-stateꢀresistance
Diagramꢀ10:ꢀTyp.ꢀgateꢀthresholdꢀvoltage
440
4.0
400
360
320
280
240
3.5
900 µA
3.0
2.5
2.0
1.5
1.0
0.5
0.0
90 µA
200
98%
160
typ
120
80
40
0
-60
-20
20
60
100
140
180
-60
-20
20
60
100
140
180
T
j
ꢀ[°C]
T
j
ꢀ[°C]
R
DS(on)
=f(
T
j
);ꢀ
I
D
=16ꢀA;ꢀ
V
GS
=10ꢀV
V
GS(th)
=f(
T
j
);ꢀ
V
GS
=
V
DS
;ꢀparameter:ꢀ
I
D
Diagramꢀ11:ꢀTyp.ꢀcapacitances
Diagramꢀ12:ꢀForwardꢀcharacteristicsꢀofꢀreverseꢀdiode
10
4
10
2
25 °C
175 °C
25°C, 98%
175°C, 98%
Ciss
10
3
Coss
10
2
10
1
Crss
10
1
10
0
10
0
0
40
80
120
160
0.0
0.5
1.0
1.5
2.0
V
DS
ꢀ[V]
V
SD
ꢀ[V]
C
=f(
V
DS
);ꢀ
V
GS
=0ꢀV;ꢀ
f
=1ꢀMHz
I
F
=f(
V
SD
);ꢀparameter:ꢀ
T
j
Final Data Sheet
7
Rev.ꢀ2.1,ꢀꢀ2016-12-05
OptiMOS
TM
3ꢀPower-Transistor,ꢀ300ꢀV
BSC13DN30NSFD
Diagramꢀ13:ꢀAvalancheꢀcharacteristics
Diagramꢀ14:ꢀTyp.ꢀgateꢀcharge
10
2
10
8
6
240 V
150 V
60 V
10
1
25 °C
4
2
0
100 °C
150 °C
10
0
10
0
10
1
10
2
10
3
0
5
10
15
20
25
t
AV
ꢀ[µs]
Q
gate
ꢀ[nC]
I
AS
=f(
t
AV
);ꢀ
R
GS
=25ꢀ
Ω
;ꢀparameter:ꢀ
T
j(start)
V
GS
=f(
Q
gate
);ꢀ
I
D
=16ꢀAꢀpulsed;ꢀparameter:ꢀ
V
DD
Diagramꢀ15:ꢀDrain-sourceꢀbreakdownꢀvoltage
Gate charge waveforms
340
320
300
280
260
240
-60
-20
20
60
100
140
180
T
j
ꢀ[°C]
V
BR(DSS)
=f(
T
j
);ꢀ
I
D
=1ꢀmA
Final Data Sheet
8
Rev.ꢀ2.1,ꢀꢀ2016-12-05
OptiMOS
TM
3ꢀPower-Transistor,ꢀ300ꢀV
BSC13DN30NSFD
5ꢀꢀꢀꢀꢀPackageꢀOutlines
Figureꢀ1ꢀꢀꢀꢀꢀOutlineꢀPG-TDSON-8,ꢀdimensionsꢀinꢀmm
Final Data Sheet
9
Rev.ꢀ2.1,ꢀꢀ2016-12-05
OptiMOS
TM
3ꢀPower-Transistor,ꢀ300ꢀV
BSC13DN30NSFD
Figureꢀ2ꢀꢀꢀꢀꢀOutlineꢀFootprintꢀ(TDSON-8)
Final Data Sheet
10
Rev.ꢀ2.1,ꢀꢀ2016-12-05
OptiMOS
TM
3ꢀPower-Transistor,ꢀ300ꢀV
BSC13DN30NSFD
RevisionꢀHistory
BSC13DN30NSFD
Revision:ꢀ2016-12-05,ꢀRev.ꢀ2.1
Previous Revision
Revision Date
Subjects (major changes since last revision)
1.2
1.3
2.0
2.1
Release of Preliminary Datasheet
Rev. 1.3 (preliminary datasheet)
Release of final version
Update Eas
2016-04-26
2016-05-13
2016-10-21
2016-12-05
TrademarksꢀofꢀInfineonꢀTechnologiesꢀAG
AURIX™,ꢀC166™,ꢀCanPAK™,ꢀCIPOS™,ꢀCoolGaN™,ꢀCoolMOS™,ꢀCoolSET™,ꢀCoolSiC™,ꢀCORECONTROL™,ꢀCROSSAVE™,ꢀDAVE™,ꢀDI-POL™,ꢀDrBlade™,
EasyPIM™,ꢀEconoBRIDGE™,ꢀEconoDUAL™,ꢀEconoPACK™,ꢀEconoPIM™,ꢀEiceDRIVER™,ꢀeupec™,ꢀFCOS™,ꢀHITFET™,ꢀHybridPACK™,ꢀInfineon™,
ISOFACE™,ꢀIsoPACK™,ꢀi-Wafer™,ꢀMIPAQ™,ꢀModSTACK™,ꢀmy-d™,ꢀNovalithIC™,ꢀOmniTune™,ꢀOPTIGA™,ꢀOptiMOS™,ꢀORIGA™,ꢀPOWERCODE™,
PRIMARION™,ꢀPrimePACK™,ꢀPrimeSTACK™,ꢀPROFET™,ꢀPRO-SIL™,ꢀRASIC™,ꢀREAL3™,ꢀReverSave™,ꢀSatRIC™,ꢀSIEGET™,ꢀSIPMOS™,ꢀSmartLEWIS™,
SOLIDꢀFLASH™,ꢀSPOC™,ꢀTEMPFET™,ꢀthinQꢁ™,ꢀTRENCHSTOP™,ꢀTriCore™.
TrademarksꢀupdatedꢀAugustꢀ2015
OtherꢀTrademarks
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81726ꢀMünchen,ꢀGermany
©ꢀ2016ꢀInfineonꢀTechnologiesꢀAG
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LegalꢀDisclaimer
Theꢀinformationꢀgivenꢀinꢀthisꢀdocumentꢀshallꢀinꢀnoꢀeventꢀbeꢀregardedꢀasꢀaꢀguaranteeꢀofꢀconditionsꢀorꢀcharacteristicsꢀ
(“Beschaffenheitsgarantie”)ꢀ.
Withꢀrespectꢀtoꢀanyꢀexamples,ꢀhintsꢀorꢀanyꢀtypicalꢀvaluesꢀstatedꢀhereinꢀand/orꢀanyꢀinformationꢀregardingꢀtheꢀapplicationꢀofꢀthe
product,ꢀInfineonꢀTechnologiesꢀherebyꢀdisclaimsꢀanyꢀandꢀallꢀwarrantiesꢀandꢀliabilitiesꢀofꢀanyꢀkind,ꢀincludingꢀwithoutꢀlimitation
warrantiesꢀofꢀnon-infringementꢀofꢀintellectualꢀpropertyꢀrightsꢀofꢀanyꢀthirdꢀparty.
Inꢀaddition,ꢀanyꢀinformationꢀgivenꢀinꢀthisꢀdocumentꢀisꢀsubjectꢀtoꢀcustomer’sꢀcomplianceꢀwithꢀitsꢀobligationsꢀstatedꢀinꢀthis
documentꢀandꢀanyꢀapplicableꢀlegalꢀrequirements,ꢀnormsꢀandꢀstandardsꢀconcerningꢀcustomer’sꢀproductsꢀandꢀanyꢀuseꢀofꢀthe
productꢀofꢀInfineonꢀTechnologiesꢀinꢀcustomer’sꢀapplications.
Theꢀdataꢀcontainedꢀinꢀthisꢀdocumentꢀisꢀexclusivelyꢀintendedꢀforꢀtechnicallyꢀtrainedꢀstaff.ꢀItꢀisꢀtheꢀresponsibilityꢀofꢀcustomer’s
technicalꢀdepartmentsꢀtoꢀevaluateꢀtheꢀsuitabilityꢀofꢀtheꢀproductꢀforꢀtheꢀintendedꢀapplicationꢀandꢀtheꢀcompletenessꢀofꢀtheꢀproduct
informationꢀgivenꢀinꢀthisꢀdocumentꢀwithꢀrespectꢀtoꢀsuchꢀapplication.
Information
Forꢀfurtherꢀinformationꢀonꢀtechnology,ꢀdeliveryꢀtermsꢀandꢀconditionsꢀandꢀpricesꢀpleaseꢀcontactꢀyourꢀnearestꢀInfineon
Warnings
Dueꢀtoꢀtechnicalꢀrequirements,ꢀcomponentsꢀmayꢀcontainꢀdangerousꢀsubstances.ꢀForꢀinformationꢀonꢀtheꢀtypesꢀinꢀquestion,
pleaseꢀcontactꢀtheꢀnearestꢀInfineonꢀTechnologiesꢀOffice.
TheꢀInfineonꢀTechnologiesꢀcomponentꢀdescribedꢀinꢀthisꢀDataꢀSheetꢀmayꢀbeꢀusedꢀinꢀlife-supportꢀdevicesꢀorꢀsystemsꢀand/or
automotive,ꢀaviationꢀandꢀaerospaceꢀapplicationsꢀorꢀsystemsꢀonlyꢀwithꢀtheꢀexpressꢀwrittenꢀapprovalꢀofꢀInfineonꢀTechnologies,ꢀifꢀa
failureꢀofꢀsuchꢀcomponentsꢀcanꢀreasonablyꢀbeꢀexpectedꢀtoꢀcauseꢀtheꢀfailureꢀofꢀthatꢀlife-support,ꢀautomotive,ꢀaviationꢀand
aerospaceꢀdeviceꢀorꢀsystemꢀorꢀtoꢀaffectꢀtheꢀsafetyꢀorꢀeffectivenessꢀofꢀthatꢀdeviceꢀorꢀsystem.ꢀLifeꢀsupportꢀdevicesꢀorꢀsystemsꢀare
intendedꢀtoꢀbeꢀimplantedꢀinꢀtheꢀhumanꢀbodyꢀorꢀtoꢀsupportꢀand/orꢀmaintainꢀandꢀsustainꢀand/orꢀprotectꢀhumanꢀlife.ꢀIfꢀtheyꢀfail,ꢀitꢀis
reasonableꢀtoꢀassumeꢀthatꢀtheꢀhealthꢀofꢀtheꢀuserꢀorꢀotherꢀpersonsꢀmayꢀbeꢀendangered.
Final Data Sheet
11
Rev.ꢀ2.1,ꢀꢀ2016-12-05
