Infineon-Technologies-BSD235N-H6327
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BSD235N
OptiMOS
™
2 Small-Signal-Transistor
Features
Product Summary
V
DS
20
V
• Dual N-channel
R
DS(on),max
V
GS
=4.5 V
V
GS
=2.5 V
350
600
0.95
m
W
• Enhancement mode
• Super Logic level (2.5V rated)
I
D
A
• Avalanche rated
• Qualified according to AEC Q101
• 100% lead-free; RoHS compliant
• Halogen-free according to IEC61249-2-21
PG-SOT-363
6
5
4
1
2
3
Type
Package
Tape and Reel Information
Marking
X6s
Lead Free
Yes
Packing
Non dry
BSD235N
PG-SOT-363 H6327:
3000 pcs/ reel
Maximum ratings,
at
T
j
=25 °C, unless otherwise specified
Parameter
1)
Value
Symbol Conditions
Unit
I
D
T
A
=25 °C
T
A
=70 °C
T
A
=25 °C
Continuous drain current
0.95
0.76
3.8
A
I
D,pulse
Pulsed drain current
E
AS
I
D
=0.95 A,
R
GS
=16
W
Avalanche energy, single pulse
1.6
6
mJ
I
D
=0.95 A,
V
DS
=16 V,
d
i
/d
t
=200 A/µs,
T
j,max
=150 °C
Reverse diode d
v
/d
t
d
v
/d
t
kV/µs
V
GS
Gate source voltage
±12
0.5
V
P
tot
T
A
=25 °C
Power dissipation
W
°C
T
j
,
T
stg
Operating and storage temperature
ESD Class
-55 … 150
0 (<250V)
260 °C
JESD22-A114 -HBM
Soldering Temperature
IEC climatic category; DIN IEC 68-1
55/150/56
(1)
Remark: only one of both transistors in operation.
Rev 2.5
page 1
2014-07-29
BSD235N
Unit
Values
typ.
Parameter
Symbol Conditions
min.
max.
Thermal characteristics
Thermal resistance,
junction – ambient
minimal footprint
(2)
R
thJA
–
–
250 K/W
Electrical characteristics,
at
T
j
=25 °C, unless otherwise specified
Static characteristics
V
(BR)DSS
V
GS
=0 V,
I
D
=250 µA
V
GS(th)
V
DS
=V
GS
,
I
D
=1.6 µA
Drain-source breakdown voltage
Gate threshold voltage
20
–
–
V
0.7
0.95
1.2
V
DS
=20 V,
V
GS
=0 V,
T
j
=25 °C
I
DSS
Drain-source leakage current
–
–
1
m
A
V
DS
=20 V,
V
GS
=0 V,
T
j
=150 °C
–
–
–
–
–
100
I
GSS
V
GS
=12 V,
V
DS
=0 V
Gate-source leakage current
100 nA
R
DS(on)
V
GS
=2.5 V,
I
D
=0.29 A
V
GS
=4.5 V,
I
D
=0.95 A
Drain-source on-state resistance
415
600
350
–
m
W
–
266
2
|
V
DS
|>2|
I
D
|
R
DS(on)max
,
g
fs
Transconductance
S
I
D
=0.76 A
2)
Performed on 40 mm
2
FR4 PCB. The traces are 1mm wide, 70
μ
m thick and 20mm long; they are present on both
sides of the PCB
Rev 2.5
page 2
2014-07-29
BSD235N
Unit
Values
typ.
Parameter
Symbol Conditions
min.
max.
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
C
iss
–
–
–
–
–
–
–
49
23
63
32
–
pF
ns
V
GS
=0 V,
V
DS
=10 V,
f
=1 MHz
C
oss
C
rss
t
d(on)
t
r
3.2
3.8
3.6
4.5
1.2
–
–
V
DD
=10 V,
V
GS
=4.5 V,
I
D
=0.95 A,
R
G,ext
=6
W
t
d(off)
t
f
Turn-off delay time
Fall time
–
–
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Q
gs
–
–
–
–
0.11
0.07
0.32
2.4
–
–
–
–
nC
Q
gd
V
DD
=10 V,
I
D
=0.95 A,
V
GS
=0 to 4.5 V
Q
g
V
plateau
Gate plateau voltage
V
A
Reverse Diode
I
S
Diode continous forward current
Diode pulse current
–
–
–
–
0.5
3.8
T
A
=25 °C
I
S,pulse
V
GS
=0 V,
I
F
=0.95 A,
T
j
=25 °C
V
SD
Diode forward voltage
–
0.9
1.2
V
t
rr
Reverse recovery time
–
–
5.2
–
–
ns
V
R
=10 V,
I
F
=0.95 A,
d
i
F
/d
t
=100 A/µs
Q
rr
Reverse recovery charge
0.97
nC
Rev 2.5
page 3
2014-07-29
BSD235N
1 Power dissipation
2 Drain current
P
tot
=f(
T
A
)
I
D
=f(
T
A
);
V
GS
≥4.5 V
1
0.75
0.5
0.5
0.375
0.25
0.25
0.125
0
0
0
0
40
80
120
40
80
120
160
T
A
[
°
C]
T
A
[
°
C]
3 Safe operating area
I
D
=f(
V
DS
);
T
A
=25 °C;
D
=0
parameter:
t
p
4 Max. transient thermal impedance
Z
thJA
=f(
t
p
)
parameter:
D
=
t
p
/
T
10
1
10
3
10
0
100 µs
0.5
1 ms
10
2
10 ms
0.2
DC
0.1
10
-1
0.05
0.01
10
1
10 µs
single pulse
10
-2
10
-3
10
0
10
-2
10
-1
10
0
V
DS
[V]
10
1
10
2
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
t
p
[s]
Rev 2.5
page 4
2014-07-29
BSD235N
5 Typ. output characteristics
I
D
=f(
V
DS
);
T
j
=25 °C
6 Typ. drain-source on resistance
R
DS(on)
=f(
I
D
);
T
j
=25 °C
parameter:
V
GS
parameter:
V
GS
4
600
500
3.5 V
4.5 V
2.2 V
2.5 V
3
2
1
0
3 V
3 V
400
300
200
100
0
3.5 V
4.5 V
6 V
2.5 V
2.3 V
2 V
0
1
2
3
0
1
2
3
4
V
DS
[V]
I
D
[A]
7 Typ. transfer characteristics
8 Typ. forward transconductance
I
D
=f(
V
GS
); |
V
DS
|>2|
I
D
|
R
DS(on)max
g
fs
=f(
I
D
);
T
j
=25 °C
4
2
0
0.5
25 °C
0.25
150 °C
0
0
1
2
3
0
2
4
6
V
GS
[V]
I
D
[A]
Rev 2.5
page 5
2014-07-29
BSD235N
9 Drain-source on-state resistance
10 Typ. gate threshold voltage
V
GS(th)
=f(
T
j
);
V
DS
=V
GS
;
I
D
=1.6 µA
parameter:
I
D
R
DS(on)
=f(
T
j
);
I
D
=0.95 A;
V
GS
=4.5 V
1.6
600
500
1.2
98 %
400
98 %
typ
0.8
0.4
0
300
typ
2 %
200
100
0
-60
-20
20
60
100
140
-60
-20
20
60
T
j
[
°
C]
100
140
T
j
[
°
C]
11 Typ. capacitances
12 Forward characteristics of reverse diode
I
F
=f(
V
SD
C
=f(
V
DS
);
V
GS
=0 V;
f
=1 MHz; T
j
=25°C
)
parameter:
T
j
10
2
10
1
Ciss
10
0
10
-1
10
-2
Coss
10
1
150 °C, 98%
25 °C, 98%
Crss
25 °C
150 °C
10
0
10
-3
0
0
5
10
15
20
0.4
0.8
V
SD
[V]
1.2
1.6
V
DS
[V]
Rev 2.5
page 6
2014-07-29
BSD235N
13 Avalanche characteristics
14 Typ. gate charge
V
GS
=f(
Q
gate
);
I
D
=0.95 A pulsed
parameter:
V
DD
I
AS
=f(
t
AV
);
R
GS
=16
W
parameter:
T
j(start)
10
1
7
6
5
4
3
2
1
0
10 V
16 V
4 V
10
0
25 °C
100 °C
125 °C
10
-1
10
-2
10
0
10
1
10
2
10
3
10
4
0
0.1
0.2
0.3
0.4
0.5
t
AV
[µs]
Q
gate
[nC]
15 Drain-source breakdown voltage
16 Gate charge waveforms
V
BR(DSS)
=f(
T
j
);
I
D
=250 µA
25
24
23
22
21
20
19
18
17
16
V
GS
Q
g
V
gs(th)
Q
g(th)
Q
sw
Q
gd
Q
gate
Q
gs
-60
-20
20
60
100
140
T
j
[
°
C]
Rev 2.5
page 7
2014-07-29
BSD235N
SOT-363
Package Outline:
Footprint:
Packing:
Reflow soldering:
Note: For symmetric types there is no defined Pin 1 orientation in the reel.
Dimensions in mm
Rev 2.5
page 8
2014-07-29
BSD235N
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2008 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of
conditions or characteristics. With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device,
Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please
Warnings
Due to technical requirements, components may contain dangerous substances. For information
on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with
the express written approval of Infineon Technologies, if a failure of such components can
reasonably be expected to cause the failure of that life-support device or system or to affect
the safety or effectiveness of that device or system. Life support devices or systems are
intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user
or other persons may be endangered.
Rev 2.5
page 9
2014-07-29
