Infineon-Technologies-BSL308C-H6327
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BSL308C
OptiMOS™ P3 + Optimos™ 2 Small Signal Transistor
Product Summary
Features
·
Complementary P + N channel
P
N
·
Enhancement mode
·
Logic level (4.5V rated)
·
Avalanche rated
V
DS
-30
80
30
57
93
2.3
V
R
DS(on),max
V
GS
=
±
10 V
m
W
V
GS
=
±
4.5 V
130
-2.0
I
D
A
·
Qualified according to AEC Q101
·
100% Lead-free; RoHS compliant
·
Halogen free according to IEC61249-2-21
PG-TSOP-6
6
5
4
1
2
3
3
Type
Package
Tape and Reel Information
H6327: 3000 pcs / reel
Marking
Lead Free
Packing
BSL308C
PG-TSOP6
sPS
Yes
Non dry
Maximum ratings,
at
T
j
=25 °C, unless otherwise specified
1)
Value
Parameter
Symbol Conditions
Unit
P
N
I
D
T
A
=25 °C
T
A
=70 °C
T
A
=25 °C
Continuous drain current
-2.0
2.3
1.8
9
A
-1.6
-8.0
I
D,pulse
Pulsed drain current
P:
I
D
=-2.0 A,
N:
I
D
=2.3 A,
R
GS
=25
W
E
AS
Avalanche energy, single pulse
10.7
10.8
mJ
V
GS
±20
0.5
Gate source voltage
V
Power dissipation
2)
P
tot
T
A
=25 °C
W
°C
T
j
,
T
stg
-55 … 150
Operating and storage temperature
ESD class
class 0 (<250V)
260
JESD22-A114-HBM
T
solder
Soldering temperature
°C
55/150/56
IEC climatic category; DIN IEC 68-1
1)
Remark: only one of both transistors active
Rev.2.1
page 1
2013-11-07
BSL308C
Unit
Values
typ.
Parameter
Symbol Conditions
min.
max.
Thermal characteristics
P
N
Thermal resistance, junction –
ambient
1)
minimal footprint
2)
R
thJA
–
–
250 K/W
Electrical characteristics,
at
T
j
=25 °C, unless otherwise specified
Static characteristics
V
(BR)DSS
V
GS
=0 V,
I
D
=-250 µA
V
GS
=0 V,
I
D
=250 µA
Drain-source breakdown voltage
P
N
–
–
–
-30
–
V
30
V
GS(th)
V
DS
=
V
GS
,
I
D
=-11µA
V
DS
=
V
GS
,
I
D
=11 µA
Gate threshold voltage
P
N
-2
-1.5
1.6
-1
2
1.2
V
DS
=-30 V,
V
GS
=0 V,
T
j
=25 °C
I
DSS
Zero gate voltage drain current
P
N
–
–
–
–
-1
1
µA
V
DS
=30 V,
V
GS
=0 V,
T
j
=25 °C
V
DS
=-30 V,
V
GS
=0 V,
T
j
=150 °C
P
N
–
–
–
–
–
–
-100
100
V
DS
=30 V,
V
GS
=0 V,
T
j
=150 °C
Gate-source leakage current
P
N
I
GSS
V
GS
=±20 V,
V
DS
=0 V
±100 nA
V
GS
=-4.5 V,
I
D
=-1.7 A
R
DS(on)
P
N
–
–
88
67
130
93
m
W
Drain-source on-state
resistance
V
GS
=4.5 V,
I
D
=1.85 A
V
GS
=-10 V,
I
D
=-2.0 A
P
N
–
–
62
44
80
57
V
GS
=10 V,
I
D
=2.3 A
|
V
DS
|>2|
I
D
|
R
DS(on)max
I
D
=-1.6 A
,
,
g
fs
Transconductance
P
–
4.6
–
S
|
V
DS
|>2|
I
D
|
R
DS(on)max
I
D
=1.8 A
N
–
5
–
2)
Performed on 40mm
2
FR4 PCB. The traces are 1mm wide, 70
μ
m thick and 20mm long; they are present on both
sides of the PCB
Rev.2.1
page 2
2013-11-07
BSL308C
Unit
Values
typ.
Parameter
Symbol Conditions
min.
max.
Dynamic characteristics
C
iss
Input capacitance
P
N
P
N
P
N
P
N
P
N
P
N
P
N
–
–
–
–
–
–
–
–
–
–
–
–
–
–
376
207
196
75
500 pF
275
V
GS
=0 V,
P:
V
DS
=-15 V,
N:
V
DS
= 15 V,
f
=1 MHz
C
oss
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
261
100
C
rss
12
18
12
17
t
d(on)
5.6
4.4
7.7
2.3
15.3
8.3
2.8
1.4
–
–
–
–
–
–
–
–
ns
P:
V
DD
=-15 V,
t
r
V
GS
=-10 V,
R
G
=6
W
,
I
D
=-2 A
t
d(off)
Turn-off delay time
Fall time
N:
V
DD
=15 V,
V
GS
=10 V,
R
G
=6
W
,
I
D
=2.3 A
t
f
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Switching charge
Q
gs
P
N
–
–
–
–
–
–
-1.2
-0.6
-5.0
-3.1
0.65
0.45
1.5
–
–
–
–
–
–
–
–
nC
V
DD
=-15 V,
I
D
=-2 A,
-10 V
Q
gd
V
GS
=0 to
Q
g
V
plateau
Q
gs
Gate plateau voltage
Gate to source charge
Gate to drain charge
Switching charge
V
DD
=15 V,
I
D
=2.3 A,
V
GS
=0 to 10 V
Q
gd
Q
g
V
plateau
Gate plateau voltage
3.1
Rev.2.1
page 3
2013-11-07
BSL308C
Unit
Values
typ.
Parameter
Symbol Conditions
min.
max.
Reverse Diode
Diode continuous forward current
I
S
P
N
P
N
–
–
–
–
–
–
–
–
-0.4
0.5
-8.4
9
A
V
T
C
=25 °C
I
S,pulse
Diode pulse current
V
GS
=0 V,
I
F
=-2 A,
T
j
=25 °C
V
SD
Diode forward voltage
P
–
–
-0.8
-1.1
1.1
V
GS
=0 V,
I
F
=2.3 A,
T
j
=25 °C
N
P
0.83
t
rr
Reverse recovery time
–
–
–
–
14
-5.9
14.4
2.9
–
–
–
–
ns
V
R
=-15 V,
I
F
=-2A,
d
i
F
/d
t
=-100 A/µs
Q
rr
t
rr
nC
ns
Reverse recovery charge
N
V
R
=15 V,
I
F
=2.3A
d
i
F
/d
t
=100 A/µs
Q
rr
nC
Rev.2.1
page 4
2013-11-07
BSL308C
1 Power dissipation (P)
2 Power dissipation (N)
P
tot
=f(
T
A
)
P
tot
=f(
T
A
)
0.6
0.5
0.4
0.3
0.2
0.1
0
0.6
0.5
0.4
0.3
0.2
0.1
0
0
40
80
120
160
0
40
80
120
160
T
A
[°C]
T
A
[°C]
3 Drain current (P)
I
D
=f(
T
A
)
4 Drain current (N)
I
D
=f(
T
A
)
parameter:
V
GS
≤-10 V
parameter:
V
GS
≥10 V
2.4
2.2
2
2.4
2.2
2
1.8
1.6
1.4
1.2
1
1.8
1.6
1.4
1.2
1
0.8
0.6
0.4
0.2
0
0.8
0.6
0.4
0.2
0
0
40
80
120
160
0
40
80
120
160
T
A
[°C]
T
A
[°C]
Rev.2.1
page 5
2013-11-07
BSL308C
5 Safe operating area (P)
I
D
=f(
V
DS
);
T
A
=25 °C;
D
=0
parameter:
t
p
6 Safe operating area (N)
I
D
=f(
V
DS
);
T
A
=25 °C;
D
=0
parameter:
t
p
10
1
10
1
1 µs
1 µs
100 µs
1 ms
10 µs
10 µs
100 µs
10 ms
1 ms
10
0
10
0
10
-1
10
-2
10
-3
10
-4
10 ms
DC
10
-1
DC
10
-2
10
-3
10
-4
10
-1
10
0
10
1
10
2
10
-1
10
0
10
1
10
2
V
DS
[V]
V
DS
[V]
7 Max. transient thermal impedance (P)
Z
thJA
=f(
t
p
)
8 Max. transient thermal impedance (N)
Z
thJA
=f(
t
p
)
parameter:
D
=
t
p
/
T
parameter:
D
=
t
p
/
T
10
3
10
3
0.5
0.5
10
2
10
2
0.2
0.2
0.1
0.1
0.05
0.02
0.05
10
1
10
1
0.01
0.02
single pulse
0.01
single pulse
10
0
10
0
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
t
p
[s]
t
p
[s]
Rev.2.1
page 6
2013-11-07
BSL308C
9 Typ. output characteristics (P)
I
D
=f(
V
DS
);
T
j
=25 °C
10 Typ. output characteristics (N)
I
D
=f(
V
DS
);
T
j
=25 °C
parameter:
V
GS
parameter:
V
GS
6
6
-10 V
4.5 V
-4.5 V
5
5
10 V
4 V
3.5 V
-4 V
-3.5 V
4
4
3
2
1
0
-3.3 V
3.3 V
3
2
1
0
-3 V
3 V
2.8 V
-2.8 V
0
1
2
3
0
1
2
3
-V
DS
[V]
V
DS
[V]
11 Typ. drain-source on resistance (P)
R
DS(on)
=f(
I
D
);
T
j
=25 °C
12 Typ. drain-source on resistance (N)
R
DS(on)
=f(
I
D
);
T
j
=25 °C
parameter:
V
GS
parameter:
V
GS
200
200
3.5 V
3 V
3.3 V
175
175
3.3 V
150
150
3.5 V
125
125
100
4 V
100
4.5 V
5 V
4 V
75
75
4.5 V
5 V
10 V
50
50
10 V
25
0
25
0
0
1
2
3
4
5
6
7
8
0
1
2
3
4
5
6
7
8
I
D
[A]
I
D
[A]
Rev.2.1
page 7
2013-11-07
BSL308C
13 Typ. transfer characteristics (P)
I
D
=f(
V
GS
);
|
V
DS
|>2 | I
D
| R
DS(on)max
parameter:
T
j
14 Typ. transfer characteristics (N)
I
D
=f(
V
GS
);
|
V
DS
|>2 | I
D
| R
DS(on)max
parameter:
T
j
5
4
3
5
4
3
2
25 °C
2
150 °C
150 °C
25 °C
1
0
1
0
0
1
2
3
4
5
0
1
2
3
4
5
-V
GS
[V]
V
GS
[V]
15 Drain-source on-state resistance (P)
16 Drain-source on-state resistance (N)
R
DS(on)
=f(
T
j
);
I
D
=-2.0 A;
V
GS
=-10 V
R
DS(on)
=f(
T
j
);
I
D
=2.3 A;
V
GS
=10 V
120
120
98%
80
80
2%
98%
2%
40
40
0
0
-60
-20
20
60
100
140
180
-60
-20
20
60
100
140
180
T
j
[°C]
T
j
[°C]
Rev.2.1
page 8
2013-11-07
BSL308C
17 Typ. gate threshold voltage (P)
18 Typ. gate threshold voltage (N)
V
GS(th)
=f(
T
j
);
V
GS
=
V
DS
;
I
D
=-11 µA
V
GS(th)
=f(
T
j
);
V
GS
=
V
DS
;
I
D
=11 µA
2.8
2.4
2.8
2.4
max
2
2
max
1.6
1.6
typ
typ
1.2
1.2
min
min
0.8
0.8
0.4
0
0.4
0
-60
-20
20
60
100
140
180
-60
-20
20
60
100
140
180
T
j
[°C]
T
j
[°C]
19 Typ. capacitances (P)
20 Typ. capacitances (N)
C
=f(
V
DS
);
V
GS
=0 V;
f
=1 MHz
C
=f(
V
DS
);
V
GS
=0 V;
f
=1 MHz
10
3
10
3
Ciss
Ciss
Coss
10
2
10
2
10
1
10
0
Coss
10
1
Crss
Crss
0
10
20
30
0
10
20
30
-V
DS
[V]
V
DS
[V]
Rev.2.1
page 9
2013-11-07
BSL308C
21 Forward characteristics of reverse diode (P)
I
F
=f(
V
SD
22 Forward characteristics of reverse diode (N)
I
F
=f(
V
SD
)
)
parameter:
T
j
parameter:
T
j
10
1
10
1
25 °C
10
0
10
0
150 °C, 98%
150 °C
150 °C
25 °C
150°C, 98%
10
-1
10
-1
25 °C, 98%
25 °C, 98%
10
-2
0
10
-2
0
0.5
1
1.5
0.5
1
1.5
-V
SD
[V]
V
SD
[V]
23 Avalanche characteristics (P)
24 Avalanche characteristics (N)
I
AS
=f(
t
AV
);
R
GS
=25
W
parameter:
T
j(start)
I
AS
=f(
t
AV
);
R
GS
=25
W
parameter:
T
j(start)
10
1
10
1
25 °C
25 °C
100 °C
100 °C
10
0
10
0
125 °C
125 °C
10
-1
10
-1
10
0
10
1
10
2
10
3
10
0
10
1
10
2
10
3
t
AV
[µs]
t
AV
[µs]
Rev.2.1
page 10
2013-11-07
BSL308C
25 Typ. gate charge (P)
V
GS
=f(
Q
gate
);
I
D
=-2.0 A pulsed
parameter:
V
DD
26 Typ. gate charge (N)
V
GS
=f(
Q
gate
);
I
D
=2.3 A pulsed
parameter:
V
DD
10
10
8
8
-24 V
15 V
6
6
-15 V
6 V
24 V
-6 V
4
4
2
0
2
0
0
1
2
3
4
5
6
0
1
2
3
4
5
6
-Q
gate
[nC]
Q
gate
[nC]
27 Drain-source breakdown voltage (P)
28 Drain-source breakdown voltage (N)
V
BR(DSS)
=f(
T
j
);
I
D
=-250 µA
V
BR(DSS)
=f(
T
j
);
I
D
=250 µA
36
34
32
30
28
26
24
36
34
32
30
28
26
24
-60
-20
20
60
100
140
180
-60
-20
20
60
100
140
180
T
j
[°C]
T
j
[°C]
Rev.2.1
page 11
2013-11-07
BSL308C
TSOP-6
Package Outline:
Footprint:
Packaging:
Dimensions in mm
Rev.2.1
page 12
2013-11-07
BSL308C
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2009 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of
conditions or characteristics. With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device,
Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please
contact the nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information
on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with
the express written approval of Infineon Technologies, if a failure of such components can
reasonably be expected to cause the failure of that life-support device or system or to affect
the safety or effectiveness of that device or system. Life support devices or systems are
intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user
or other persons may be endangered.
Rev.2.1
page 13
2013-11-07
