Infineon-Technologies-BSO110N03MSG
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BSO110N03MS G
Opti
MOS
™
3 M-Series Power-MOSFET
Product Summary
Features
V
DS
30
11
V
• Optimized for 5V driver application (Notebook, VGA, POL)
• Low FOM
SW
for High Frequency SMPS
• 100% Avalanche tested
R
DS(on),max
V
GS
=10 V
V
GS
=4.5 V
m
Ω
13.9
12.1
I
D
A
• N-channel
• Very low on-resistance
R
DS(on)
@
V
GS
=4.5 V
• Excellent gate charge x
R
DS(on)
product (FOM)
PG-DSO-8
• Qualified for consumer level application
• Pb-free plating; RoHS compliant
• Halogen-free according to IEC61249-2-21
Type
Package
Marking
BSO110N03MS G
PG-DSO-8
110N03MS
Maximum ratings,
at
T
j
=25
°
C
, unless otherwise specified
Value
10 secs
steady state
Parameter
Symbol Conditions
Unit
Continuous drain current
1)
I
D
V
GS
=10 V,
T
A
=25
°
C
V
GS
=10 V,
T
A
=90
°
C
12.1
8.4
10
A
6.6
V
GS
=4.5 V,
T
A
=25
°
C
V
GS
=4.5 V,
T
A
=90
°
C
10.8
7.5
8.5
5.9
Pulsed drain current
2)
I
D,pulse
I
AS
T
A
=25
°
C
T
A
=25
°
C
85
Avalanche current, single pulse
3)
12.1
E
AS
20
I
D
=12.1 A,
R
GS
=25
Ω
Avalanche energy, single pulse
mJ
V
GS
±20
Gate source voltage
V
Power dissipation
1)
P
tot
T
A
=25
°
C
2.5
1.56
W
°C
T
j
,
T
stg
-55 … 150
55/150/56
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
Rev.1.1
page 1
2009-11-19
BSO110N03MS G
Values
Parameter
Symbol Conditions
Unit
min.
typ.
max.
Thermal characteristics
Thermal resistance,
junction – soldering point
R
thJS
–
–
–
–
–
–
–
–
–
–
35
110
150
50
K/W
minimal footprint,
t
p
≤
10 s
Thermal resistance,
junction – ambient
R
thJA
minimal footprint,
steady state
6 cm
2
cooling area
1)
,
t
p
≤
10 s
6 cm
2
cooling area
1)
,
steady state
80
Electrical characteristics,
at
T
j
=25
°
C
, unless otherwise specified
Static characteristics
V
(BR)DSS
V
GS
=0 V,
I
D
=1 mA
Drain-source breakdown voltage
Gate threshold voltage
30
1
–
–
–
V
V
GS(th)
V
DS
=
V
GS
,
I
D
=250 µA
2
V
DS
=30 V,
V
GS
=0 V,
T
j
=25
°
C
I
DSS
Zero gate voltage drain current
–
–
0.1
10
10
µA
V
DS
=30 V,
V
GS
=0 V,
T
j
=125
°
C
100
I
GSS
V
GS
=16 V,
V
DS
=0 V
Gate-source leakage current
–
–
10
11.1
9.2
100 nA
R
DS(on)
V
GS
=4.5 V,
I
D
=10.8 A
V
GS
=10 V,
I
D
=12.1 A
R
G
Drain-source on-state resistance
13.9
11
m
Ω
–
Gate resistance
0.4
0.9
1.6
Ω
|
V
DS
|>2|
I
D
|
R
DS(on)max
I
D
=12.1 A
,
g
fs
Transconductance
16
31
–
S
1)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
2)
See figure 3 for more detailed information
3)
See figure 13 for more detailed information
page 2
Rev.1.1
2009-11-19
BSO110N03MS G
Values
Parameter
Symbol Conditions
Unit
min.
typ.
max.
Dynamic characteristics
C
iss
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
–
–
–
–
–
–
–
1100
390
24
1500 pF
V
GS
=0 V,
V
DS
=15 V,
C
oss
C
rss
t
d(on)
t
r
520
–
f
=1 MHz
7.8
4.4
9.5
4.4
–
–
–
–
ns
V
DD
=15 V,
V
GS
=4.5 V,
I
D
=12.1 A,
R
G
=1.6
Ω
t
d(off)
t
f
Turn-off delay time
Fall time
Gate Charge Characteristics
4)
Gate to source charge
Gate charge at threshold
Gate to drain charge
Switching charge
Q
gs
–
–
–
–
–
–
3.4
1.8
1.6
3.1
7.2
2.9
–
–
nC
Q
g(th)
Q
gd
–
V
DD
=15 V,
I
D
=12.1 A,
V
GS
=0 to 4.5 V
Q
sw
–
Q
g
Gate charge total
10
–
V
plateau
Gate plateau voltage
V
V
DD
=15 V,
I
D
=12.1 A,
V
GS
=0 to 10 V
Q
g
Gate charge total
–
15
20
nC
V
DS
=0.1 V,
Q
g(sync)
Gate charge total, sync. FET
Output charge
–
–
6.2
8.3
14
V
GS
=0 to 4.5 V
Q
oss
V
DD
=15 V,
V
GS
=0 V
10.2
Reverse Diode
I
S
Diode continuous forward current
Diode pulse current
–
–
–
–
3
A
T
A
=25
°
C
I
S,pulse
85
V
GS
=0 V,
I
F
=12.1 A,
T
j
=25
°
C
V
SD
Diode forward voltage
–
–
0.86
–
1.1
10
V
V
R
=15 V,
I
F
=
I
S
,
d
i
F
/d
t
=400 A/µs
Q
rr
Reverse recovery charge
nC
4)
See figure 16 for gate charge parameter definition
Rev.1.1
page 3
2009-11-19
BSO110N03MS G
1 Power dissipation
2 Drain current
I
D
=f(
T
A
);
t
p
≤
10 s
parameter:
V
GS
P
tot
=f(
T
A
);
t
p
≤
10 s
3
2.5
2
14
12
10
8
4.5 V
1.5
1
10 V
6
4
0.5
2
0
0
0
0
40
80
120
160
40
80
T
A
[
°
C
]
120
160
T
A
[
°
C
]
3 Safe operating area
4 Max. transient thermal impedance
I
D
=f(
V
DS
);
T
A
=25
°
C
2)
;
D
=0
parameter:
t
p
Z
thJA
=f(
t
p
)
2)
parameter:
D
=
t
p
/
T
10
2
10
2
1 µs
limited by on-state
resistance
10 µs
0.5
100 µs
10
1
0.2
1 ms
10
1
0.1
10 ms
0.05
0.02
10
0
10
-1
10
-2
100 ms
0.01
10 s
10
0
single pulse
10
-1
10
-1
10
0
10
1
10
2
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
V
DS
[V]
t
p
[s]
Rev.1.1
page 4
2009-11-19
BSO110N03MS G
6 Typ. drain-source on resistance
5 Typ. output characteristics
I
D
=f(
V
DS
);
T
j
=25
°
C
R
DS(on)
=f(
I
D
);
T
j
=25
°
C
parameter:
V
GS
parameter:
V
GS
80
30
5 V
10 V
4.5 V
70
60
50
40
30
20
10
0
25
20
15
10
5
2.8 V
4 V
3 V
3.2 V
3.5 V
4 V
5 V
3.5 V
4.5 V
3.2 V
10 V
3 V
2.8 V
0
0
1
2
3
0
5
10
15
20
25
30
V
DS
[V]
I
D
[A]
7 Typ. transfer characteristics
I
D
=f(
V
GS
); |
V
DS
|>2|
I
D
|
R
DS(on)max
parameter:
T
j
8 Typ. forward transconductance
g
fs
=f(
I
D
);
T
j
=25
°
C
80
70
60
50
40
30
20
50
40
30
20
10
0
10
150
°
C
25
°
C
0
0
1
2
3
4
5
0
5
10
15
20
25
30
V
GS
[V]
I
D
[A]
Rev.1.1
page 5
2009-11-19
BSO110N03MS G
9 Drain-source on-state resistance
10 Typ. gate threshold voltage
R
DS(on)
=f(
T
j
);
I
D
=12.1 A;
V
GS
=10 V
V
GS(th)
=f(
T
j
);
V
GS
=
V
DS
;
I
D
=250 µA
20
2.5
2
15
98 %
1.5
1
10
typ
5
0
0.5
0
-60
-20
20
60
100
140
180
-60
-20
20
60
100
140
180
T
j
[
°
C
]
T
j
[
°
C
]
11 Typ. capacitances
12 Forward characteristics of reverse diode
I
F
=f(
V
SD
C
=f(
V
DS
);
V
GS
=0 V;
f
=1 MHz
)
parameter:
T
j
10
4
10
2
150
°
C
, 98%
25
°
C
10
3
10
2
10
1
10
0
Ciss
Coss
10
1
150
°
C
25
°
C
, 98%
Crss
10
0
10
-1
0
0
10
20
30
0.5
1
1.5
2
V
DS
[V]
V
SD
[V]
Rev.1.1
page 6
2009-11-19
BSO110N03MS G
13 Avalanche characteristics
AS
=f(
t
AV
);
R
GS
=25
Ω
14 Typ. gate charge
V
GS
=f(
Q
gate
);
I
D
=12.1 A pulsed
parameter:
V
DD
I
parameter:
T
j(start)
100
12
10
8
15 V
6 V
24 V
10
25
°
C
100
°
C
6
125
°
C
1
4
2
0.1
1
0
10
100
1000
0
4
8
12
16
t
AV
[µs]
Q
gate
[nC]
15 Drain-source breakdown voltage
16 Gate charge waveforms
V
BR(DSS)
=f(
T
j
);
I
D
=1 mA
34
32
30
28
26
24
22
20
V
GS
Q
g
V
g
s
(th)
Q
g
(
t
h)
Q
sw
Q
g
d
Q
g
ate
Q
g
s
-60
-20
20
60
100
140
180
T
j
[
°
C
]
Rev.1.1
page 7
2009-11-19
BSO110N03MS G
Package Outline
PG-DSO-8: Outline
Rev.1.1
page 8
2009-11-19
BSO110N03MS G
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2008 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of
conditions or characteristics. With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device,
Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please
contact the nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information
on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with
the express written approval of Infineon Technologies, if a failure of such components can
reasonably be expected to cause the failure of that life-support device or system or to affect
the safety or effectiveness of that device or system. Life support devices or systems are
intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user
or other persons may be endangered.
Rev.1.1
page 9
2009-11-19
