Infineon-Technologies-BSP135-H6906
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BSP135
SIPMOS
®
Small-Signal-Transistor
Product Summary
V
DS
Features
600
V
W
A
• N-channel
• Depletion mode
R
DS(on),max
I
DSS,min
60
0.02
• d
v
/d
t
rated
• Available with
V
GS(th)
indicator on reel
• Pb-free lead plating; RoHS compliant
• Qualified according to AEC Q101
PG-SOT223
•
Halogenfree according to IEC61249221
Type
Package
Tape and Reel Information
Marking
Packaging
BSP135
PG-SOT223
H
6327: 1000 pcs/reel
BSP135
Non dry
BSP135
PG-SOT223
H
6906: 1000 pcs/reel
BSP135
Non dry
sorted in
V
bands
1)
GS(th)
Maximum ratings,
at
T
j
=25 °C, unless otherwise specified
Value
Parameter
Symbol Conditions
Unit
I
D
T
A
=25 °C
T
A
=70 °C
T
A
=25 °C
Continuous drain current
0.12
0.10
0.48
A
I
D,pulse
d
v
/d
t
V
GS
Pulsed drain current
Reverse diode d
v
/d
t
Gate source voltage
I
D
=0.12 A,
V
DS
=20 V,
d
i
/d
t
=200 A/µs,
T
j,max
=150 °C
6
kV/µs
V
±20
ESD Class
(JESD22-A114-HBM)
1A(>250V,<500V)
P
tot
T
A
=25 °C
Power dissipation
1.8
W
T
j
,
T
stg
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
-55 … 150
55/150/56
°C
1)
see table on next page and diagram 11
Rev. 1.3
3
page 1
2012-
11
-2
9
BSP135
Unit
Values
typ.
Parameter
Symbol Conditions
min.
max.
Thermal characteristics
Thermal resistance,
junction – soldering point (pin 4)
R
thJS
–
–
25
K/W
R
thJA
SMD version, device on PCB
minimal footprint
–
–
–
–
115
70
6 cm
2
cooling area
2)
Electrical characteristics,
at
T
j
=25 °C, unless otherwise specified
Static characteristics
V
(BR)DSS
V
GS
=-3 V,
I
D
=250 µA
V
GS(th)
V
DS
=3 V,
I
D
=94 µA
Drain-source breakdown voltage
Gate threshold voltage
600
-2.1
–
–
V
-1.4
-1
V
DS
=600 V,
I
D(off)
Drain-source cutoff current
–
–
–
–
0.1
10
µA
V
GS
=-3 V,
T
j
=25 °C
V
DS
=600 V,
V
GS
=-3 V,
T
j
=125 °C
I
GSS
I
DSS
V
GS
=20 V,
V
DS
=0 V
V
GS
=0 V,
V
DS
=10 V
Gate-source leakage current
On-state drain current
–
20
–
–
100 nA
–
–
mA
R
DS(on)
V
GS
=0 V,
I
D
=0.01A
V
GS
=10 V,
I
D
=0.12 A
Drain-source on-state resistance
30
25
60
45
W
–
|
V
DS
|>2|
I
D
|
R
DS(on)max
I
D
=0.1 A
,
g
fs
Transconductance
0.08
0.16
–
S
V
Threshold voltage
V
GS(th)
sorted in bands
3)
V
GS(th)
V
DS
=3 V,
I
D
=94 µA
J
-1.2
-1.35
-1.5
–
–
–
–
–
-1
K
L
-1.15
-1.3
M
N
-1.65
-1.8
-1.45
-1.6
2)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm
2
(single layer, 70 µm thick) copper area for
drain connection. PCB is vertical in still air.
3)
Each reel contains transistors out of one band whose identifying letter is printed on the reel label. A specific
band cannot be ordered separately.
Rev. 1.3
3
page 2
2012-
11
-2
9
BSP135
Unit
Values
typ.
Parameter
Symbol Conditions
min.
max.
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
C
iss
–
–
–
–
–
–
–
98
8.5
3.4
5.4
5.6
28
146 pF
13
V
GS
=-3 V,
V
DS
=25 V,
f
=1 MHz
C
oss
C
rss
t
d(on)
t
r
5.1
8.1
8.4
42
ns
V
DD
=300 V,
V
GS
=-3…5 V,
I
D
=0.1 A,
R
G
=6
W
t
d(off)
t
f
Turn-off delay time
Fall time
182
273
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Q
gs
–
–
–
–
0.24
2.0
0.36 nC
3.0
Q
gd
V
DD
=400 V,
I
D
=0.1 A,
V
GS
=-3 to 5 V
Q
g
3.7
4.9
V
plateau
Gate plateau voltage
0.20
–
V
A
Reverse Diode
I
S
Diode continous forward current
Diode pulse current
–
–
–
–
0.12
0.48
T
A
=25 °C
I
S,pulse
V
GS
=-3 V,
I
F
=0.12 A,
T
j
=25 °C
V
SD
Diode forward voltage
–
0.78
1.2
V
t
rr
Reverse recovery time
–
–
87
70
130 ns
104 nC
V
R
=300 V,
I
F
=0.1 A,
d
i
F
/d
t
=100 A/µs
Q
rr
Reverse recovery charge
Rev. 1.3
3
page 3
2012-
11
-2
9
BSP135
1 Power dissipation
2 Drain current
P
tot
=f(
T
A
)
I
D
=f(
T
A
);
V
GS
≥10 V
2
1.5
1
0.15
0.1
0.05
0
0.5
0
0
40
80
120
160
0
40
80
120
160
T
A
[°C]
T
A
[°C]
3 Safe operating area
I
D
=f(
V
DS
);
T
A
=25 °C;
D
=0
parameter:
t
p
4 Max. transient thermal impedance
Z
thJA
=f(
t
p
)
parameter:
D
=
t
p
/
T
10
0
10
2
10 µs
limited by on-state
resistance
100 µs
0.5
0.2
10
-1
10
-2
10
-3
1 ms
10
1
10 ms
0.1
0.05
single pulse
0.02
DC
0.01
10
0
10
0
10
1
10
2
10
3
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
V
DS
[V]
t
p
[s]
Rev. 1.3
3
page 4
2012-
11
-2
9
BSP135
5 Typ. output characteristics
I
D
=f(
V
DS
);
T
j
=25 °C
6 Typ. drain-source on resistance
R
DS(on)
=f(
I
D
);
T
j
=25 °C
parameter:
V
GS
parameter:
V
GS
0.25
100
-0.2 V
0.2 V
0.5 V
0 V
10 V
1 V
-0.1 V
0.1 V
0.2
0.15
0.1
80
60
40
20
0
0.5 V
0.2 V
0.1 V
0 V
1 V
-0.1 V
-0.2 V
10 V
0.05
0
0
2
4
6
8
10
0
0.04
0.08
0.12
0.16
0.2
V
DS
[V]
I
D
[A]
7 Typ. transfer characteristics
8 Typ. forward transconductance
I
D
=f(
V
GS
); |
V
DS
|>2|
I
D
|
R
DS(on)max
g
fs
=f(
I
D
);
T
j
=25 °C
0.25
0.2
0.15
0.1
0.05
0
0.2
0.15
0.1
0.05
0
0.00
-2
-1
0
1
0.04
0.08
0.12
V
GS
[V]
I
D
[A]
Rev. 1.3
3
page 5
2012-
11
-2
9
BSP135
9 Drain-source on-state resistance
10 Typ. gate threshold voltage
V
GS(th)
=f(
T
j
);
V
DS
=3 V;
I
D
=94 µA
parameter:
I
D
R
DS(on)
=f(
T
j
);
I
D
=0.01 A;
V
GS
=0 V
160
140
120
100
0
-0.5
98 %
-1
-1.5
-2
typ
80
98 %
60
2 %
40
typ
-2.5
-3
20
0
-60
-20
20
60
100
140
180
-60
-20
20
60
T
j
[°C]
100
140
180
T
j
[°C]
11 Threshold voltage bands
12 Typ. capacitances
I
D
=f(
V
GS
);
V
DS
=3 V;
T
j
=25 °C
C
=f(
V
DS
);
V
GS
=-3 V;
f
=1 MHz
10
1
10
3
K
J
L
N
M
10
0
10
2
10
1
10
0
Ciss
10
-1
Coss
Crss
94 µA
10
-2
-2
-1.5
-1
-0.5
0
10
20
30
V
GS
[V]
V
DS
[V]
Rev. 1.3
3
page 6
2012-
11
-2
9
BSP135
13 Forward characteristics of reverse diode
I
F
=f(
V
SD
15 Typ. gate charge
V
GS
=f(
Q
gate
);
I
D
=0.1 A pulsed
parameter:
V
DD
)
parameter:
T
j
10
0
8
0.5 VDS(max)
0.2 VDS(max)
6
4
0.8 VDS(max)
25 °C
10
-1
150 °C
150 °C, 98%
25 °C, 98%
2
10
-2
0
-2
-4
10
-3
0
0.5
1
1.5
2
0
1
2
3
4
5
V
SD
[V]
Q
gate
[nC]
16 Drain-source breakdown voltage
V
BR(DSS)
=f(
T
j
);
I
D
=250 µA
700
660
620
580
540
500
-60
-20
20
60
100
140
180
T
j
[°C]
Rev. 1.3
3
page 7
2012-
11
-2
9
BSP135
Package Outline:
Footprint:
Packaging:
Dimensions in mm
Rev. 1.3
3
page 8
2012-
11
-2
9
BSP135
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2008 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of
conditions or characteristics. With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device,
Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please
Warnings
Due to technical requirements, components may contain dangerous substances. For information
on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with
the express written approval of Infineon Technologies, if a failure of such components can
reasonably be expected to cause the failure of that life-support device or system or to affect
the safety or effectiveness of that device or system. Life support devices or systems are
intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user
or other persons may be endangered.
Rev. 1.3
3
page 9
2012-
11
-2
9
