Infineon-Technologies-BSP295H6327
| Part # | Infineon-Technologies-BSP295H6327 |
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Rev 2.
3
BSP295
SIPMOS Small-Signal-Transistor
Feature
Product Summary
V
60
0.3
1.8
V
DS
N-Channel
R
DS(on)
Enhancement mode
d
v
/d
t
rated
I
A
D
PG-SOT223
Pb-free lead plating; RoHS compliant
•
x
Qualified according to AEC Q101
4
•
Halogenfree according to IEC61249221
3
2
1
VPS05163
Marking Packaging
Type
Package
Tape and Reel Information
H
6327: 1000 pcs/reel
PG-SOT223
BSP295 Non
dry
BSP295
Maximum Ratings
, at
T
= 25 °C, unless otherwise specified
j
Parameter
Symbol
Value
Unit
A
Continuous drain current
I
D
T
=25°C
1.8
1.44
7.2
A
T
=70°C
A
Pulsed drain current
I
D puls
T
=25°C
A
Reverse diode d
v
/d
t
d
v
/d
t
6
kV/µs
V
I
=1.8A,
V
=40V, d
i
/d
t
=200A/µs,
T
DS jmax
S
=150°C
Gate source voltage
V
±20
1B (>500V, <1000V)
1.8
GS
ESD class (JESD22-A114-HBM)
Power dissipation
P
W
tot
T
=25°C
A
°C
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
T
,
T
-55… +150
55/150/56
j
stg
Page 1
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Rev 2.
3
BSP295
Thermal Characteristics
Parameter
Symbol
Values
typ. max.
Unit
min.
Characteristics
–
15
25
K/W
Thermal resistance, junction – soldering point
SMD version, device on PCB:
@ min. footprint
R
R
thJS
thJA
–
–
80
48
115
70
2
1)
@ 6 cm
cooling area
Electrical Characteristics
, at
T
= 25 °C, unless otherwise specified
j
Parameter
Symbol
Values
Unit
min.
60
typ. max.
Static Characteristics
V
–
–
V
Drain-source breakdown voltage
(BR)DSS
V
=0,
I
=250µA
GS
D
0.8
1.1
1.8
Gate threshold voltage,
V
=
V
V
GS
DS
GS(th)
DSS
I
=400µA
D
µA
nA
Zero gate voltage drain current
I
I
V
V
=60V,
V
=0,
T
=25°C
GS
–
–
–
–
0.1
50
10
DS
j
=60V,
V
=0,
T
=150°C
DS GS
8
1
j
Gate-source leakage current
GSS
V
=20V,
V
=0
GS DS
Drain-source on-state resistance
R
DS(on)
V
V
=10V,
I
=1.8A
–
–
0.22
0.39
0.3
0.5
GS
D
=4.5V,
I
=1.8A
GS
D
1
Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
Page 2
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Rev 2.
3
Electrical Characteristics
, at
T
= 25 °C, unless otherwise specified
BSP295
j
Parameter
Symbol
Conditions
Values
typ. max.
Unit
min.
Dynamic Characteristics
Transconductance
g
V
2*
I
*
R
,
DS(on)max
0.8
1.7
–
S
DS
fs
D
I
=1.44A
D
Input capacitance
Output capacitance
C
V
=0,
V
=25V,
GS DS
–
–
–
–
–
–
–
295
95
368 pF
118
iss
f
=1MHz
C
oss
Reverse transfer capacitance
C
45
67
rss
Turn-on delay time
Rise time
t
V
=15V,
V
=4.5V,
DD GS
5.4
9.9
27
8.1 ns
15
d(on)
I
=1.44 A,
R
=15
t
G
D
r
Turn-off delay time
Fall time
t
41
d(off)
t
19
28
f
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Q
Q
Q
V
=24V,
I
=1.8A
–
–
–
0.9
5.6
14
1.1 nC
8.4
DD
gs
gd
g
D
V
DD
=24V,
I
=1.8A,
17
Gate charge total
D
V
GS
=0 to 10V
V
=24V,
I
= 1.8 A
–
–
3.1
–
3.8
1.8
V
A
Gate plateau voltage
V
DD
D
(plateau)
Reverse Diode
T
=25°C
A
Inverse diode continuous
forward current
I
S
I
–
–
–
–
–
7.2
1.3
45
Inv. diode direct current, pulsed
SM
V
=0,
I
=
I
GS
0.84
36
V
Inverse diode forward voltage
V
F
S
SD
Reverse recovery time
t
V
=25V,
I
=
l
,
F S
ns
nC
R
rr
d
i
/d
t
=100A/µs
Reverse recovery charge
Q
38
48
F
rr
Page 3
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Rev 2.
3
BSP295
1 Power dissipation
2 Drain current
I
=
f
(
T
)
P
=
f
(
T
)
tot
A
D
A
parameter:
V
10 V
GS
BSP295
BSP295
1.9
1.9
W
A
1.6
1.4
1.2
1
1.6
1.4
1.2
1
0.8
0.6
0.4
0.2
0
0.8
0.6
0.4
0.2
0
0
20
40
60
80 100
120
160
0
20
40
60
80 100
120
160
°C
°C
T
T
A
A
3 Safe operating area
I
=
f
(
V
4 Transient thermal impedance
Z
=
f
(
t
)
thJA
)
D
DS
p
parameter :
D
= 0 ,
T
= 25 °C
parameter :
D
=
t
/
T
A
p
10
2
BSP295
K/W
10
1
10
0
D = 0.50
0.20
0.10
0.05
single pulse
10
-1
0.02
0.01
10
-2
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
10
4
s
t
p
Page 4
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Rev 2.
3
BSP295
5 Typ. output characteristic
I
=
f
(
V
)
6 Typ. drain-source on resistance
=
f
(
I
)
R
D
DS
DS(on)
D
parameter:
T
= 25 °C,
V
parameter:
T
j
= 25 °C,
V
GS
j
GS
1.8
3.6
3V
3.4V
5V
6V
7V
2.4V
2.8V
A
3.8
4.2V
4.2V
5V
6V
3
10V
1.4
1.2
1
7V
10V
2.7
2.4
2.1
1.8
1.5
1.2
0.9
0.6
0.3
0
3.8V
3.4V
0.8
0.6
0.4
0.2
0
3V
2.8V
2.4V
0
0.5
1
1.5
2
2.5
3
3.5
4
5
0
0.6
1.2
1.8
2.4
3.6
V
A
I
V
DS
D
7 Typ. transfer characteristics
I
=
f
(
V
);
V
2 x
I
x
R
8 Typ. forward transconductance
g
= f(
I
)
D
GS
DS
D
DS(on)max
fs
D
parameter:
T
j
= 25 °C
parameter:
T
j
= 25 °C
2.5
2.5
A
S
1.5
1
1.5
1
0.5
0
0.5
0
0
0.5
1
1.5
2
2.5
3
4
0
0.6
1.2
1.8
2.4
3.6
V
V
I
V
D
GS
Page 5
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Rev 2.
3
BSP295
9 Drain-source on-state resistance
=
f
(
T
)
10 Typ. gate threshold voltage
V
=
f
(
T
)
GS(th)
R
DS(on)
j
j
parameter :
I
= 1.8 A,
V
= 10 V
parameter:
V
=
V
;
I
= 1 mA
GS DS
D
D
GS
BSP295
2.2
0.75
V
98%
1.8
1.6
1.4
1.2
1
0.6
0.55
0.5
typ.
2%
0.45
0.4
0.35
0.3
98%
0.8
0.6
0.4
0.2
0
0.25
0.2
typ
0.15
0.1
0.05
0
°C
-60
-20
20
60
100
180
-60
-20
20
60
100
160
°C
T
j
T
j
11 Typ. capacitances
C
=
f
(
V
)
12 Forward character. of reverse diode
I
=
f
(V )
DS
F
SD
parameter:
V
=0,
f
=1 MHz,
T
j
= 25 °C
parameter:
T
GS
j
10
3
10
1
BSP295
A
Ciss
pF
10
0
Coss
10
2
Crss
10
-1
T
j
= 25 °C typ
T
j
= 150 °C typ
T
j
= 25 °C (98%)
T
j
= 150 °C (98%)
10
1
10
-2
V
0
5
10
15
20
30
DS
0
0.4
0.8
1.2
1.6
2
2.4
3
V
V
V
SD
Page 6
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Rev 2.
3
BSP295
13 Typ. avalanche energy
=
f
(
T
)
14 Typ. gate charge
=
f
(
Q
); parameter:
V
E
V
,
DS
AS
j
GS
G
par.:
I
= 3.9 A,
V
= 25 V,
R
= 25
I
= 1.8 A pulsed,
T
= 25 °C
D
DD
GS
D
j
BSP295
60
16
V
mJ
12
10
8
40
30
20
10
0
6
0.2
V
DS max
0.5
V
DS max
0.8
V
DS max
4
2
0
°C
nC
20
40
60
80
100
120
160
0
4
8
12
16
24
Q
T
j
G
15 Drain-source breakdown voltage
V
=
f
(
T
)
(BR)DSS
j
Page 7
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Rev 2.
3
BSP295
Page 8
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