Infineon-Technologies-BSP315PH6327
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BSP315P
SIPMOS Small-Signal-Transistor
Features
Product Summary
•
P-Channel
Drain source voltage
V
-60
0.8
V
DS
•
Enhancement mode
Drain-Source on-state resistance
R
Ω
DS(on)
•
Avalanche rated
•
Logic Level
Continuous drain current
I
-1.17
A
D
4
•
d
v
/d
t
rated
Pin 1
Pin2/4
PIN 3
3
G
D
S
•
Qualified according to AEC Q101
2
1
VPS05163
•
Halogenfree according to IEC61249221
Type
Package
Tape and Reel Information
Marking
H
6327
: 1000 pcs/reel
BSP31
5
P
Packaging
PG-
SOT223
BSP31
5
P
Non dry
Maximum Ratings
,at
T
= 25 °C, unless otherwise specified
j
Parameter
Symbol
Value
Unit
Continuous drain current
I
D
A
T
= 25 °C
-1.17
-0.94
A
T
= 70 °C
A
Pulsed drain current
I
-4.68
D puls
T
= 25 °C
A
Avalanche energy, single pulse
E
E
24
mJ
AS
AR
I
= -1.17 A
,
V
= -25 V,
R
= 25
Ω
D
DD
GS
Avalanche energy, periodic limited by
T
0.18
6
jmax
Reverse diode d
v
/d
t
d
v
/d
t
kV/µs
I
= -1.17 A,
V
= -48 V,
d
i
/d
t
= 200 A/µs,
S
DS
T
= 150 °C
jmax
Gate source voltage
Power dissipation
V
V
±
20
GS
P
1.8
W
tot
T
= 25 °C
A
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
ESD Class; JESD22-A114-HBM
T
,
T
-55…+150
55/150/56
Class 0
°C
j
stg
Rev.1.
7
Page 1
20
12
–
1
1
–
2
6
BSP315P
Thermal Characteristics
Parameter
Symbol
Values
typ.
Unit
min.
max.
Characteristics
Thermal resistance, junction – soldering point
(Pin 4)
R
–
–
25
K/W
K/W
thJS
SMD version, device on PCB:
@ min. footprint
R
thJA
–
–
–
–
115
70
2
1)
@ 6 cm
cooling area
Electrical Characteristics
, at
T
= 25 °C, unless otherwise specified
j
Parameter
Symbol
Values
typ.
Unit
min.
-60
-1
max.
Static Characteristics
Drain- source breakdown voltage
V
V
–
–
V
(BR)DSS
GS(th)
V
= 0 V,
I
= -250 µA
D
GS
Gate threshold voltage,
V
=
V
-1.5
-2
GS
DS
I
= -160 µA
D
Zero gate voltage drain current
I
µA
DSS
V
V
= -60 V,
V
= 0 V,
T
= 25 °C
–
–
-0.1
-10
-1
DS
DS
GS
j
= -60 V,
V
= 0 V,
T
= 125 °C
-100
GS
j
Gate-source leakage current
= -20 V,
V
= 0 V
I
–
–
–
-10
0.8
0.5
-100 nA
GSS
V
GS
DS
Drain-Source on-state resistance
= -4.5 V,
I
= -0.89 A
R
1.4
0.8
Ω
Ω
DS(on)
V
GS
D
Drain-Source on-state resistance
R
DS(on)
V
= -10 V,
I
= -1.17 A
D
GS
1
2
Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm
(one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
Rev.1.
7
Page
2
20
12
–
1
1
–
2
6
BSP315P
Electrical Characteristics,
at
T
= 25 °C, unless otherwise specified
j
Parameter
Symbol
Values
typ.
Unit
min.
max.
Dynamic Characteristics
Transconductance
g
0.7
1.4
130
40
–
S
fs
V
≤
2*
I
*
R
,
I
= -0.89 A
DS(on)max D
DS
D
Input capacitance
= 0 V,
V
= -25 V,
f
= 1 MHz
C
–
–
–
–
160 pF
iss
V
GS
DS
Output capacitance
= 0 V,
V
= -25 V,
f
= 1 MHz
C
50
21
oss
V
GS
DS
Reverse transfer capacitance
= 0 V,
V
= -25 V,
f
= 1 MHz
C
17
rss
V
GS
DS
Turn-on delay time
= -30 V,
V
= -4.5 V,
I
= -0.89 A,
t
24
36
14
48
28
ns
d(on)
V
DD
GS
D
R
= 18
Ω
G
Rise time
t
–
–
–
9
r
V
= -30 V,
V
= -4.5 V,
I
= -0.89 A,
GS D
DD
R
= 18
Ω
G
Turn-off delay time
= -30 V,
V
= -4.5 V,
I
= -0.89 A,
t
32
19
d(off)
V
DD
GS
D
R
= 18
Ω
G
Fall time
t
f
V
= -30 V,
V
= -4.5 V,
I
= -0.89 A,
GS D
DD
R
= 18
Ω
G
Rev.1.
7
Page
3
20
12
–
1
1
–
2
6
BSP315P
Electrical Characteristics,
at
T
= 25 °C, unless otherwise specified
j
Parameter
Symbol
Values
typ.
Unit
min.
max.
Dynamic Characteristics
Gate to source charge
Q
Q
–
–
–
–
0.7
1.8
1.1
2.6
7.8
–
nC
gs
V
= -48 V,
I
= -1.17 A
D
DD
Gate to drain charge
= -48 V,
I
= -1.17 A
gd
V
DD
D
Gate charge total
= -48 V,
I
= -1.17 A,
V
= 0 to -10 V
Q
5.2
g
V
DD
D
GS
Gate plateau voltage
= -48 V,
I
= -1.17 A
V
-3.14
V
(plateau)
V
DD
D
Parameter
Symbol
Values
typ.
Unit
min.
max.
-1.17
-4.68
-1.3
46
Reverse Diode
Inverse diode continuous forward current
I
–
–
–
–
–
–
–
A
S
T
= 25 °C
A
Inverse diode direct current,pulsed
I
SM
T
= 25 °C
A
Inverse diode forward voltage
V
-0.97
30.5
36
V
SD
V
= 0 V,
I
= -1.17 A
F
GS
Reverse recovery time
V
= -30 V,
I
=
I
,
d
i
/d
t
= 100 A/µs
t
ns
µC
rr
R
F
S
F
Reverse recovery charge
Q
54
rr
V
= -30 V,
I
=
l
,
d
i
/d
t
= 100 A/µs
R
F S
F
Rev.1.
7
Page
4
20
12
–
1
1
–
2
6
BSP315P
Power Dissipation
Drain current
I
=
f
(
T
)
P
=
f
(
T
)
A
tot
D
A
parameter :
V
≥ −
10V
GS
BSP 315 P
BSP 315 P
-1.3
1.9
A
W
-1.1
-1.0
-0.9
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
-0.8
P
I
-0.7
-0.6
-0.5
-0.4
-0.3
-0.2
-0.1
0.0
°C
°C
0
20
40
60
80 100
120
160
0
20
40
60
80 100
120
160
T
T
A
A
Safe operating area
I
=
f
(
V
Transient thermal impedance
Z
=
f
(
t
)
thJC
)
D
DS
p
parameter :
D
= 0 ,
T
= 25 °C
parameter :
D
=
t
/
T
A
p
BSP 315 P
BSP 315 P
10
2
-10
1
t
= 280.0
µs
p
K/W
A
10
1
I
1 ms
V
-10
0
I
Z
10 ms
R
10
0
D = 0.50
0.20
-10
-1
0.10
0.05
10
-1
0.02
single pulse
0.01
DC
V
-10
-2
-10
-1
10
-2
-10
0
-10
1
-10
2
DS
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
10
4
s
V
t
p
Rev.1.
7
Page
5
20
12
–
1
1
–
2
6
BSP315P
Typ. output characteristics
I
=
f
(
V
)
Typ. drain-source-on-resistance
=
f
(
I
)
R
D
DS
DS(on)
D
parameter:
t
= 80 µs
parameter:
V
GS
p
BSP 315 P
BSP 315 P
2.6
-2.8
A
P
tot
= 2W
Ω
a
b
c
d
k
i
l
g
V
[V]
f
e
h
GS
a
-2.4
-2.2
-2.0
-1.8
-1.6
-1.4
-1.2
-1.0
-0.8
-0.6
-0.4
-0.2
0.0
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
-2.5
-3.0
-3.5
-4.0
-4.5
-5.0
-5.5
-6.0
-6.5
-7.0
-8.0
-10.0
d
b
c
d
e
f
I
R
g
h
i
c
j
k
l
b
e
f
g
h
i
j
V
[V] =
b
GS
a
k
l
a
c
d
e
f
g
h
i
j
k
l
-2.5 -3.0 -3.5 -4.0 -4.5
-5.0 -5.5
-6.0 -6.5
-7.0 -8.0
-10.0
V
A
0.0 -0.5
-1.0 -1.5 -2.0 -2.5 -3.0 -3.5 -4.0
-5.0
DS
0.0
-0.4
-0.8
-1.2
-1.6
-2.0
-2.6
V
I
D
Typ. transfer characteristics
I
=
f
(
V
)
GS
Typ. forward transconductance
g
fs
= f(I
); T =25°C
D
V
≥
2 x
I
x
R
D DS(on)max
DS
D
j
parameter:
t
= 80 µs
parameter:
g
p
fs
2.5
-3.0
A
S
-2.0
g
1.5
I
-1.5
-1.0
-0.5
0.0
1.0
0.5
0.0
V
A
0.0
-1.0
-2.0
-3.0
-4.0
-6.0
GS
0.0
0.5
1.0
1.5
2.0
3.0
V
I
D
Rev.1.
7
Page
6
20
12
–
1
1
–
2
6
BSP315P
Drain-source on-resistance
=
f
(
T
)
Gate threshold voltage
V
=
f
(
T
)
GS(th)
R
DS(on)
j
j
parameter:
I
= -1.17 A,
V
= -10 V
parameter:
V
=
V
,
I
= -160 µA
GS DS
D
D
GS
BSP 315 P
2.1
-3.0
Ω
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
V
98%
typ
-2.0
-1.5
-1.0
-0.5
0.0
V
R
98%
typ
2%
°C
-60
-20
20
60
100
180
-60
-20
20
60
100
160
°C
T
T
j
j
Typ. capacitances
Forward characteristics of reverse diode
I
=
f
(V )
C = f(V
DS
)
F
SD
Parameter:
V
=0 V,
f
=1 MHz
parameter:
T
, t
p
= 80 µs
GS
j
BSP 315 P
10
3
-10
1
pF
A
C
iss
10
2
-10
0
I
C
C
C
oss
rss
10
1
-10
-1
T
j
= 25 °C typ
T
j
= 150 °C typ
T
j
= 25 °C (98%)
T
j
= 150 °C (98%)
10
0
-10
-2
0.0
V
V
0
-5
-10 -15 -20 -25 -30
-40
DS
-0.4 -0.8 -1.2 -1.6 -2.0 -2.4
-3.0
V
V
SD
Rev.1.
7
Page
7
20
12
–
1
1
–
2
6
BSP315P
Avalanche Energy
E
=
f
(
T
)
Typ. gate charge
=
f
(
Q
AS
j
parameter:
I
= -1.17 A
,
V
= -25 V
V
)
Gate
D
DD
GS
R
= 25
Ω
parameter:
I
= -1.17 A pulsed
GS
D
BSP 315 P
25
-16
V
mJ
-12
-10
E
V
15
10
5
-8
V
V
DS max
0,2
0,8
DS max
-6
-4
-2
0
0
25
45
65
85
105
125
165
0.0 1.0 2.0 3.0 4.0 5.0 6.0
8.0
°C
nC
T
j
Q
Gate
Drain-source breakdown voltage
V
= f (
T
)
(BR)DSS
j
BSP 315 P
-72
V
-68
-66
-64
-62
-60
-58
-56
-54
V
°C
-60
-20
20
60
100
180
T
j
Rev.1.
7
Page
8
20
12
–
1
1
–
2
6
BSP315P
Rev.1.
7
Page
9
20
12
–
1
1
–
2
6
