Infineon-Technologies-BSP321P-H6327
| Part # | Infineon-Technologies-BSP321P-H6327 |
Download  | Infineon-Technologies-BSP321P-H6327 |
BSP321P
SIPMOS
®
Small-Signal-Transistor
Product Summary
Features
V
DS
-100
900
V
• P-Channel
R
DS(on),max
I
D
m
W
A
• Enhancement mode
-0.98
• Normal level
• Avalanche rated
PG-SOT-223
• Pb-free lead plating; RoHS compliant
• Qualified according to AEC Q101
• Halogen-free according to IEC61249-2-21
Type
Package
Tape and Reel Information
H6327: 1000 pcs/reel
Marking
Lead free
Yes
Packing
BSP321P
PG-SOT-223
BSP321P
Non dry
Maximum ratings,
at
T
j
=25 °C, unless otherwise specified
Value
-0.98
-0.79
-3.9
Parameter
Symbol Conditions
Unit
I
D
T
C
=25 °C
T
C
=70 °C
T
C
=25 °C
Continuous drain current
A
I
D,pulse
Pulsed drain current
E
AS
57
I
D
=-0.98 A,
R
GS
=25
W
Avalanche energy, single pulse
mJ
V
GS
±20
1.8
Gate source voltage
V
P
tot
T
C
=25 °C
Power dissipation
W
°C
T
j
,
T
stg
-55 … 150
1A (250V to 500V)
260 °C
Operating and storage temperature
ESD Class
JESD22-A114-HBM
Soldering temperature
IEC climatic category; DIN IEC 68-1
55/150/56
Rev 1.0
5
page 1
20
12
–
11
–
27
BSP321P
Unit
Values
typ.
Parameter
Symbol Conditions
min.
max.
Thermal characteristics
Thermal resistance,
junction – ambient
minimal footprint,
steady state
R
thJA
–
–
–
–
115
70
6 cm
2
cooling area
1)
,
steady state
Electrical characteristics,
at
T
j
=25 °C, unless otherwise specified
Static characteristics
V
(BR)DSS
V
GS
=0 V,
I
D
=-250 µA
V
GS(th)
V
DS
=
V
GS
,
I
D
=-380 µA
Drain-source breakdown voltage
Gate threshold voltage
-100
-2.1
–
–
V
-3.0
-4
V
DS
=-100 V,
V
GS
=0 V,
T
j
=25 °C
I
DSS
Zero gate voltage drain current
–
–
-0.1
-10
-1
µA
V
DS
=-100 V,
V
GS
=0 V,
T
j
=150 °C
-100
I
GSS
V
GS
=-20 V,
V
DS
=0 V
Gate-source leakage current
–
–
-10
-100 nA
V
GS
=-10 V,
I
D
=-
0.98 A
R
DS(on)
Drain-source on-state resistance
689
900
–
m
W
|
V
DS
|>2|
I
D
|
R
DS(on)max
,
g
fs
Transconductance
0.6
1.2
S
I
D
=-0.79 A
1)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm
2
(one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
Rev 1.0
5
page 2
20
12
–
11
–
27
BSP321P
Unit
Values
typ.
Parameter
Symbol Conditions
min.
max.
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
C
iss
–
–
–
–
–
–
–
240
62
319 pF
V
GS
=0 V,
V
DS
=-25 V,
f
=1 MHz
C
oss
C
rss
t
d(on)
t
r
82
42
28
5.9
4.4
16.5
8.5
8.8
6.6
ns
V
DD
=-50 V,
V
GS
=-
10 V,
I
D
=-0.98 A,
R
G
=6
W
t
d(off)
t
f
Turn-off delay time
Fall time
24.7
12.7
Gate Charge Characteristics
2)
Gate to source charge
Gate to drain charge
Gate charge total
Q
gs
–
–
–
–
1.1
4
1.4
6
nC
V
DD
=-80 V,
I
D
=-
0.98 A,
V
GS
=0 to –
10 V
Q
gd
Q
g
9
12
–
V
plateau
Gate plateau voltage
4.5
V
A
Reverse Diode
I
S
Diode continuous forward current
Diode pulse current
–
–
–
–
-0.98
-3.9
T
C
=25 °C
I
S,pulse
V
GS
=0 V,
I
F
=0.98 A,
T
j
=25 °C
V
SD
Diode forward voltage
Reverse recovery time
Reverse recovery charge
–
–
–
0.84
47
1.2
V
t
rr
–
–
ns
nC
V
R
=50 V,
I
F
=|
I
S
|,
d
i
F
/d
t
=100 A/µs
Q
rr
96
2)
See figure 16 for gate charge parameter definition
Rev 1.0
5
page 3
20
12
–
11
–
27
BSP321P
1 Power dissipation
2 Drain current
P
tot
=f(
T
C
)
I
D
=f(
T
C
); |
V
GS
|≥10 V
2
1.5
1
1
0.8
0.6
0.4
0.2
0
0.5
0
0
40
80
120
160
0
40
80
120
160
T
A
[
°
C]
T
A
[
°
C]
3 Safe operating area
I
D
=f(
V
DS
);
T
C
=25 °C;
D
=0
parameter:
t
p
4 Max. transient thermal impedance
Z
thJC
=f(
t
p
)
parameter:
D
=
t
p
/
T
10
1
10
2
limited by on-state
resistance
100 µs
1 ms
0.5
0.2
10
0
10
-1
10
-2
10
1
0.1
0.05
0.02
10 ms
100 ms
10
0
0.01
DC
single pulse
10
-1
10
0
10
1
10
2
10
3
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
-V
DS
[V]
t
p
[s]
Rev 1.0
5
page 4
20
12
–
11
–
27
BSP321P
5 Typ. output characteristics
I
D
=f(
V
DS
);
T
j
=25 °C
6 Typ. drain-source on resistance
R
DS(on)
=f(
I
D
);
T
j
=25 °C
parameter:
V
GS
parameter:
V
GS
4
2
-10 V
-4 V
-6 V
-4.5 V
-7 V
-5 V
3
2
1.6
1.2
0.8
0.4
-6 V
-5 V
-7 V
-8 V
-4.5 V
1
0
-10 V
-4 V
0
2
4
6
8
10
0
1
2
3
4
-V
DS
[V]
-I
D
[A]
7 Typ. transfer characteristics
I
D
=f(
V
GS
); |
V
DS
|>2|
I
D
|
R
DS(on)max
parameter:
T
j
8 Typ. forward transconductance
g
fs
=f(
I
D
);
T
j
=25 °C
4
3
2
1
0
3
2
1
0
125 °C
25 °C
0
2
4
6
8
0
1
2
3
4
-V
GS
[V]
-I
D
[A]
Rev 1.0
5
page 5
20
12
–
11
–
27
BSP321P
9 Drain-source on-state resistance
10 Typ. gate threshold voltage
R
DS(on)
=f(
T
j
);
I
D
=-0.98 A;
V
GS
=-10 V
V
GS(th)
=f(
T
j
);
V
GS
=
V
DS
;
I
D
=-380 µA
2.5
2
5
min.
4
1.5
typ.
98 %
3
1
max.
2
0.5
typ.
1
0
-60
-20
20
60
100
140
-60
-20
20
60
100
140
T
j
[
°
C]
T
j
[
°
C]
11 Typ. capacitances
12 Forward characteristics of reverse diode
I
F
=f(
V
SD
C
=f(
V
DS
);
V
GS
=0 V;
f
=1 MHz
)
parameter:
T
j
10
3
10
1
150 °C, typ
25 °C, typ
Ciss
10
0
10
2
150 °C, 98%
Coss
Crss
10
-1
25 °C, 98%
10
1
10
-2
0
0
20
40
60
80
100
0.5
1
1.5
-V
SD
[V]
-V
DS
[V]
Rev 1.0
5
page 6
20
12
–
11
–
27
BSP321P
13 Avalanche characteristics
14 Typ. gate charge
V
GS
=f(
Q
gate
);
I
D
=-0.98 A pulsed
parameter:
V
DD
I
AS
=f(
t
AV
);
R
GS
=25
W
parameter:
T
j(start)
10
0
12
10
8
25 °C
50 V
100 °C
20 V
80 V
125 °C
6
4
2
0
10
-1
0
2
4
6
8
10
10
0
10
1
10
2
10
3
t
AV
[µs]
–
Q
gate
[nC]
15 Drain-source breakdown voltage
16 Gate charge waveforms
V
BR(DSS)
=f(
T
j
);
I
D
=-250 µA
120
115
110
105
100
95
V
GS
Q
g
V
gs(th)
Q
g(th)
Q
sw
Q
gd
Q
gate
Q
gs
90
-60
-20
20
60
100
140
T
j
[
°
C]
Rev 1.0
5
page 7
20
12
–
11
–
27
BSP321P
Package Outline: PG-SOT-223
Footprint:
Packaging:
Dimensions in mm
Rev 1.0
5
page 8
20
12
–
11
–
27
BSP321P
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2010 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of
conditions or characteristics. With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device,
Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please
Warnings
Due to technical requirements, components may contain dangerous substances. For information
on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with
the express written approval of Infineon Technologies, if a failure of such components can
reasonably be expected to cause the failure of that life-support device or system or to affect
the safety or effectiveness of that device or system. Life support devices or systems are
intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user
or other persons may be endangered.
Rev 1.0
5
page 9
20
12
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