Infineon-Technologies-BSP88H6327
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Rev.
2.
2
BSP88
ꢀ
SIPMOS
ꢁ
Small-Signal-Transistor
Product Summary
Feature
V
240
6
V
ꢀ
A
DS
S
N-Channel
S
Enhancement mode
S
Logic Level
R
I
0.35
D
PG-S
OT223
S
d
v
/d
t
rated
Pb-free lead plating; RoHS compliant
4
•
•
2.8V rated
3
x
Qualified according to AEC Q101
Halogenfree according to IEC61249221
2
•
1
VPS05163
Marking
Packaging
BSP88
Non dry
Type
BSP88
Package
P
G
–
SOT223
Tape and Reel Information
6327:
1
000 pcs/reel
H
Maximum Ratings
, at
T
= 25 °C, unless otherwise specified
Parameter
Symbol
Value
Unit
A
Continuous drain current
I
D
T
=25°C
0.35
0.28
1.4
A
T
=70°C
A
Pulsed drain current
I
D puls
T
=25°C
A
6
kV/µs
V
Reverse diode d
v
/d
t
d
v
/d
t
I
=0.35A,
V
=192V, d
i
/d
t
=200A/µs,
T
=150°C
S
DS jmax
Gate source voltage
ESD
class (JESD22-A114-HBM)
Power dissipation
V
P
±20
1A (>250V, <500V)
1.8
GS
tot
W
T
=25°C
A
°C
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
T
,
T
-55… +150
55/150/56
Page 1
20
12
–
1
1
–
29
Rev.
2.
2
BSP88
Thermal Characteristics
Parameter
Symbol
Values
typ. max.
Unit
min.
Characteristics
–
–
25
K/W
Thermal resistance, junction – soldering point
(Pin 4)
SMD version, device on PCB:
@ min. footprint
R
R
thJS
thJA
–
–
–
–
115
70
2
@ 6 cm
cooling area
1)
Electrical Characteristics
, at
T
= 25 °C, unless otherwise specified
j
Parameter
Symbol
Values
Unit
min.
240
0.6
typ. max.
Static Characteristics
Drain-source breakdown voltage
–
–
V
V
V
(BR)DSS
GS(th)
V
=0,
I
=250µA
GS
D
1
1.4
Gate threshold voltage,
V
=
V
GS
DS
I
=108µA
D
µA
Zero gate voltage drain current
I
DSS
V
=240V,
V
=0,
T
=25°C
–
–
–
–
–
1
0.1
10
10
DS
DS
GS
j
V
=240V,
V
=0,
T
=150°C
GS
j
nA
Gate-source leakage current
I
GSS
V
=20V,
V
=0
GS DS
Drain-source on-state resistance
R
–
–
–
4.9
4.6
4
15
7.5
6
ꢀ
DS(on)
DS(on)
DS(on)
V
=2.8V,
I
=0.014A
GS
D
Drain-source on-state resistance
R
R
V
=4.5V,
I
=0.32A
GS
D
Drain-source on-state resistance
V
=10V,
I
=0.35A
GS
D
1
Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
Page
2
20
12
–
1
1
–
2
9
Rev.
2.
2
Electrical Characteristics
, at
T
= 25 °C, unless otherwise specified
BSP88
Parameter
Symbol
Conditions
Values
Unit
min.
typ. max.
Dynamic Characteristics
V
O
2*
I
*
R
,
DS(on)max
0.19
0.38
–
S
Transconductance
g
DS
D
fs
I
=0.28A
D
V
=0,
V
=25V,
GS DS
–
–
–
–
–
–
–
76
12
6
3.6
3.5
17.9
18.9
95
15
9
5.4 ns
5.2
pF
Input capacitance
Output capacitance
Reverse transfer capacitance
C
Turn-on delay time
Rise time
Turn-off delay time
Fall time
C
C
iss
f
=1MHz
oss
rss
V
=120V,
V
=4.5V,
DD GS
t
d(on)
I
=0.35A,
R
=15
ꢀ
t
D
G
r
26.8
28.3
t
t
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
V
=192V,
I
=0.35A
–
–
–
0.2
2
4.5
0.3 nC
3
6.8
Q
Q
Q
DD
D
gs
gd
g
V
V
=192V,
I
=0.35A,
Gate charge total
DD
GS
D
=0 to 10V
V
=192V,
I
= 0.35 A
–
–
2.7
–
–
V
Gate plateau voltage
V
DD
D
Reverse Diode
Inverse diode continuous
forward current
Inv. diode direct current, pulsed
I
Inverse diode forward voltage
V
T
=25°C
0.35 A
1.4
1.2
82
I
S
A
–
–
–
–
–
SM
V
=0,
I
=
I
GS
0.86
66
119
V
ns
F
S
SD
t
rr
Q
rr
V
=120V,
I
=
l
,
F S
Reverse recovery time
Reverse recovery charge
R
d
i
/d
t
=100A/µs
149 nC
F
Page
3
20
12
–
11
–
29
Rev.
2.
2
BSP88
1 Power dissipation
2 Drain current
I
=
f
(
T
)
P
=
f
(
T
)
tot
A
D
A
parameter:
V
O
10 V
GS
BSP88
BSP88
1.9
W
0.38
A
1.6
1.4
1.2
1
0.32
0.28
0.24
0.2
0.8
0.6
0.4
0.2
0
0.16
0.12
0.08
0.04
0
0
20
40
60
80 100
120
160
0
20
40
60
80 100
120
160
°C
T
°C
T
A
A
3 Safe operating area
I
=
f
(
V
4 Transient thermal impedance
Z
=
f
(
t
)
thJA
)
D
DS
p
parameter :
D
= 0 ,
T
= 25 °C
parameter :
D
=
t
/
T
A
p
10
1
10
2
BSP88
BSP88
A
K/W
10
1
t
= 160.0µs
p
10
0
1 ms
10 ms
10
-1
10
-2
10
-3
10
0
D = 0.50
0.20
0.10
0.05
single pulse
10
-1
0.02
DC
0.01
10
-2
10
0
10
1
10
2
10
3
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
10
4
V
s
V
t
DS
p
Page
4
20
12
–
11
–
2
9
Rev.
2.
2
BSP88
5 Typ. output characteristic
I
=
f
(
V
)
6 Typ. drain-source on resistance
=
f
(
I
)
R
D
DS
DS(on)
D
parameter:
T
= 25 °C,
V
parameter:
T
j
= 25 °C,
V
j
GS
GS
9
0.64
3.4V
3.8V
4.4V
5V
2.6V
3.2V
ꢀ
3.2V
A
3.4V
3.8V
4V
6V
7
6
5
4
3
2
1
0
0.48
7V
4.4V
10V
5V
6V
0.4
7V
10V
2.6V
0.32
0.24
0.16
0.08
0
0
0.5
1
1.5
2
2.5
3
4
0
0.08 0.16 0.24 0.32
0.4 0.48
0.64
V
A
V
I
DS
D
7 Typ. transfer characteristics
8 Typ. forward transconductance
g
= f(
I
)
I
=
f
(
V
);
V
O
2 x
I
x
R
D
GS
DS
D
DS(on)max
fs
D
parameter:
T
j
= 25 °C
parameter:
T
j
= 25 °C
0.64
0.6
A
S
0.48
0.4
0.4
0.3
0.2
0.1
0
0.32
0.24
0.16
0.08
0
0
0.5
1
1.5
2
2.5
3.5
GS
0
0.08 0.16 0.24 0.32
0.4 0.48
0.64
V
A
V
I
D
Page
5
20
12
–
1
1
–
2
9
Rev.
2.
2
BSP88
9 Drain-source on-state resistance
=
f
(
T
)
10 Typ. gate threshold voltage
V
=
f
(
T
)
GS(th)
parameter:
V
=
V
;
I
= 108 µA
GS DS
D
R
DS(on)
j
j
parameter :
I
= 0.35 A,
V
= 10 V
D
GS
BSP88
1.8
30
ꢀ
V
98%
24
22
20
18
16
14
12
10
8
1.4
1.2
1
typ.
2%
0.8
0.6
0.4
0.2
0
98%
6
typ
4
2
0
°C
°C
-60
-20
20
60
100
180
-60
-20
20
60
100
160
T
T
j
j
11 Typ. capacitances
C
=
f
(
V
)
12 Forward character. of reverse diode
I
=
f
(V )
DS
F
SD
parameter:
V
=0,
f
=1 MHz,
T
j
= 25 °C
parameter:
T
GS
j
10
3
10
1
BSP88
pF
A
Ciss
10
2
10
0
Coss
10
1
10
-1
T
j
= 25 °C typ
T
j
= 150 °C typ
T
j
= 25 °C (98%)
T
j
= 150 °C (98%)
Crss
10
0
10
-2
V
0
5
10
15
20
30
DS
0
0.4
0.8
1.2
1.6
2
2.4
3
V
V
V
SD
Page
6
20
12
–
1
1
–
2
9
Rev.
2.
2
BSP88
13 Typ. gate charge
=
f
(
Q
); parameter:
V
14 Drain-source breakdown voltage
V
,
V
=
f
(
T
)
GS
G
DS
(BR)DSS
j
I
= 0.35 A pulsed,
T
= 25 °C
D
j
BSP88
BSP88
16
V
291
V
276
271
266
261
256
251
246
241
236
231
226
221
216
12
10
8
0.2
V
DS max
0.5
V
DS max
0.8
V
DS max
6
4
2
0
nC
0
1
2
3
4
5
7
-60
-20
20
60
100
180
°C
Q
T
j
G
Page
7
20
12
–
1
1
–
29
Rev.
2.
2
BSP88
Page
8
20
12
–
11
–
2
9
