Infineon-Technologies-BSS159N-H6327
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BSS159N
SIPMOS
®
Small-Signal-Transistor
Product Summary
V
DS
Features
60
8
V
Ω
A
• N-channel
• Depletion mode
R
DS(on),max
I
DSS,min
0.13
• d
v
/d
t
rated
• Available with
V
GS(th)
indicator on reel
• Qualified according to AEC Q101
PG-SOT-23
• 100% lead-free; Halogen-free; RoHS compliant
3
1
2
Type
Package
Pb-free
Yes
Halogen-free Tape
and Reel Information
Marking
SGs
BSS159N PG-SOT-23
BSS159N PG-SOT-23
Yes
Yes
H6327: 3000 pcs/reel
Yes
H6906: 3000 pcs/reel sorted in
SGs
1)
V
GS(th)
bands
Maximum ratings,
at
T
j
=25 °C, unless otherwise specified
Value
Parameter
Symbol Conditions
Unit
I
D
T
A
=25 °C
T
A
=70 °C
T
A
=25 °C
Continuous drain current
0.23
0.18
0.92
A
I
D,pulse
d
v
/d
t
V
GS
Pulsed drain current
I
D
=0.23 A,
V
DS
=60 V,
d
i
/d
t
=200 A/µs,
Reverse diode d
v
/d
t
6
kV/µs
V
T
j,max
=150 °C
Gate source voltage
ESD Class
±20
JESD22-A114 -HBM
0(<250V)
P
tot
T
A
=25 °C
Power dissipation
0.36
W
T
j
,
T
stg
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
-55 … 150
55/150/56
°C
1)
see table on next page and diagram 11
Rev. 2.2
page 1
2009-07-29
BSS159N
Unit
Values
typ.
Parameter
Symbol Conditions
min.
max.
Thermal characteristics
Thermal characteristics
R
thJA
minimal footprint
–
–
350 K/W
Electrical characteristics,
at
T
j
=25 °C, unless otherwise specified
Static characteristics
V
(BR)DSS
V
GS
=-10 V,
I
D
=250 µA
V
GS(th)
V
DS
=3 V,
I
D
=26 µA
Drain-source breakdown voltage
Gate threshold voltage
60
-3.5
–
–
-2.8
–
–
V
-2.4
0.1
V
DS
=60 V,
I
D(off)
Drain-source cutoff current
µA
V
GS
=-10 V,
T
j
=25 °C
V
V
DS
=60 V,
GS
=-10 V,
T
j
=125 °C
–
–
10
I
GSS
I
DSS
V
GS
=20 V,
V
DS
=0 V
V
GS
=0 V,
V
DS
=10 V
Gate-source leakage current
On-state drain current
–
–
10
–
nA
mA
Ω
130
–
R
DS(on)
V
GS
=0 V,
I
D
=0.07 A
GS
=10 V,
I
D
=0.16 A
Drain-source on-state resistance
–
–
3.9
1.7
8
V
3.5
|
V
DS
|>2|
I
D
|
R
DS(on)max
I
D
=0.16 A
,
g
fs
Transconductance
0.1
0.19
–
S
V
Threshold voltage
V
GS(th)
sorted in bands
2)
V
GS(th)
V
DS
=3 V,
I
D
=26 µA
J
-2.6
-2.75
-2.9
–
–
–
–
–
-2.4
-2.55
-2.7
-2.85
-3
K
L
M
N
-3.05
-3.2
2)
Each reel contains transistors out of one band whose identifying letter is printed on the reel label.
A specific band cannot be ordered separately.
Rev. 2.2
page 2
2009-07-29
BSS159N
Unit
Values
typ.
Parameter
Symbol Conditions
min.
max.
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
C
iss
–
–
–
–
–
–
–
29
7.4
3.1
3.1
2.9
9
39
10
5
pF
ns
V
GS
=-3 V,
V
DS
=25 V,
C
oss
C
rss
t
d(on)
t
r
f
=1 MHz
4.7
4.4
13
13
V
V
DD
=25 V,
GS
=-3…7 V,
t
d(off)
t
f
Turn-off delay time
Fall time
I
D
=0.16 A,
R
G
=6
Ω
9
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Q
gs
–
–
–
–
0.22
0.42
1.4
–
–
–
–
nC
Q
gd
V
V
DD
=48 V,
I
D
=0.16 A,
GS
=-3 to 5 V
Q
g
V
plateau
Gate plateau voltage
-0.80
V
A
Reverse Diode
I
S
Diode continous forward current
Diode pulse current
–
–
–
–
0.20
0.91
T
A
=25 °C
I
S,pulse
V
GS
=-3 V,
I
F
=0.16 A,
T
j
=25 °C
V
SD
Diode forward voltage
–
0.81
1.2
V
t
rr
Reverse recovery time
–
–
10.4
3.3
13
ns
V
R
=30 V,
I
F
=0.16 A,
d
i
F
/d
t
=100 A/µs
Q
rr
Reverse recovery charge
4.1
nC
Rev. 2.2
page 3
2009-07-29
BSS159N
1 Power dissipation
2 Drain current
P
tot
=f(
T
A
)
I
D
=f(
T
A
);
V
GS
≥
10 V
0.4
0.3
0.2
0.1
0
0.24
0.2
0.16
0.12
0.08
0.04
0
0
40
80
120
160
0
40
80
120
160
T
A
[°C]
T
A
[°C]
3 Safe operating area
4 Max. transient thermal impedance
Z
thJA
=f(
t
p
)
I
D
=f(
V
DS
);
T
A
=25 °C;
D
=0
parameter:
D
=
t
p
/
T
10
0
10
3
10 µs
limited by on-state
resistance
100 µs
0.5
1 ms
10
-1
10
2
0.2
10 ms
0.1
0.05
0.02
100 ms
single pulse
0.01
10
-2
10
1
DC
10
-3
10
0
10
0
10
1
10
2
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
V
DS
[V]
t
p
[s]
Rev. 2.2
page 4
2009-07-29
BSS159N
5 Typ. output characteristics
I
D
=f(
V
DS
);
T
j
=25 °C
6 Typ. drain-source on resistance
R
DS(on)
=f(
I
D
);
T
j
=25 °C
parameter:
V
GS
parameter:
V
GS
0.6
0.5
10
0 V
-0.1 V
10 V
1 V
8
0.5 V
0.1 V
-0.2 V
0.5 V
0.2 V
0.4
0.3
0.2
0.1
0
0.2 V
0.1 V
6
4
2
0
0 V
-0.1 V
-0.2 V
1 V
10 V
0
2
4
6
8
10
0
0.2
0.4
0.6
V
DS
[V]
I
D
[A]
7 Typ. transfer characteristics
8 Typ. forward transconductance
I
D
=f(
V
GS
); |
V
DS
|>2|
I
D
|
R
DS(on)max
g
fs
=f(
I
D
);
T
j
=25 °C
0.6
0.5
0.4
0.3
0.2
0.1
0
0.3
0.25
0.2
0.15
0.1
0.05
0
-4
-3
-2
V
GS
[V]
-1
0
1
0.0
0.1
0.2
0.3
I
D
[A]
Rev. 2.2
page 5
2009-07-29
BSS159N
9 Drain-source on-state resistance
10 Typ. gate threshold voltage
V
GS(th)
=f(
T
j
);
V
DS
=3 V;
I
D
=26 µA
parameter:
I
D
R
DS(on)
=f(
T
j
);
I
D
=0.07 A;
V
GS
=0 V
20
-2
16
12
-2.4
max
-2.8
-3.2
-3.6
-4
typ
98 %
8
min
typ
4
0
-60
-20
20
60
100
140
180
-60
-20
20
60
T
j
[°C]
100
140
180
T
j
[°C]
11 Threshold voltage bands
12 Typ. capacitances
I
D
=f(
V
GS
);
V
DS
=3 V;
T
j
=25 °C
C
=f(
V
DS
);
V
GS
=-3 V;
f
=1 MHz
10
2
1
Ciss
0.1
10
1
M
L
J
N
K
Coss
26 µA
0.01
Crss
10
0
0.001
0
10
20
30
-3.5
-3
-2.5
-2
V
GS
[V]
V
DS
[V]
Rev. 2.2
page 6
2009-07-29
BSS159N
13 Forward characteristics of reverse diode
I
F
=f(
V
SD
14 Typ. gate charge
V
GS
=f(
Q
gate
);
I
D
=0.16 A pulsed
parameter:
V
DD
)
parameter:
T
j
7
6
5
4
1
150 °C, 98%
25 °C, 98%
25 °C
150 °C
0.1
3
0.5 V
DS(max)
0.2 V
DS(max)
2
0.8 V
DS(max)
1
0
0.01
-1
-2
-3
-4
0.001
0
0
0.5
1
1.5
2
0.4
0.8
V
SD
[V]
1.2
Q
gate
[nC]
15 Drain-source breakdown voltage
16 Gate charge waveforms
V
BR(DSS)
=f(
T
j
);
I
D
=250 µA
70
V
GS
Q
g
65
60
55
50
V
g
s(th)
Q
g
(
t
h)
Q
sw
Q
g
d
Q
g
ate
Q
g
s
-60
-20
20
60
100
140
180
T
j
[°C]
Rev. 2.2
page 7
2009-07-29
BSS159N
SOT-23
Package Outline:
Footprint:
Packaging:
Dimensions in mm
Rev. 2.2
page 8
2009-07-29
BSS159N
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2009 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of
conditions or characteristics. With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device,
Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please
contact the nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information
on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with
the express written approval of Infineon Technologies, if a failure of such components can
reasonably be expected to cause the failure of that life-support device or system or to affect
the safety or effectiveness of that device or system. Life support devices or systems are
intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user
or other persons may be endangered.
Rev. 2.2
page 9
2009-07-29
