Infineon-Technologies-BSZ025N04LS
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MOSFET
MetalꢀOxideꢀSemiconductorꢀFieldꢀEffectꢀTransistor
OptiMOS
TM
OptiMOS
TM
ꢀPower-MOSFET,ꢀ40ꢀV
BSZ025N04LS
DataꢀSheet
Rev.ꢀ2.1
Final
PowerꢀManagementꢀ&ꢀMultimarket
OptiMOS
TM
ꢀPower-MOSFET,ꢀ40ꢀV
BSZ025N04LS
TSDSON-8ꢀFL
(enlarged source interconnection)
1ꢀꢀꢀꢀꢀDescription
Features
•ꢀOptimizedꢀforꢀsynchronousꢀrectification
•ꢀVeryꢀlowꢀon-resistanceꢀ
R
DS(on)
•ꢀ100%ꢀavalancheꢀtested
•ꢀSuperiorꢀthermalꢀresistance
•ꢀN-channel,ꢀlogicꢀlevel
•ꢀQualifiedꢀaccordingꢀtoꢀJEDEC
1)
ꢀꢀforꢀtargetꢀapplications
•ꢀPb-freeꢀleadꢀꢀplating;ꢀRoHSꢀcompliant
•ꢀHalogen-freeꢀaccordingꢀtoꢀIEC61249-2-21
•ꢀHigherꢀsolderꢀjointꢀreliabilityꢀwithꢀenlargedꢀsourceꢀinterconnection
S 1
S 2
S 3
G 4
8 D
7 D
Tableꢀ1ꢀꢀꢀꢀꢀKeyꢀPerformanceꢀParameters
Parameter
Value
Unit
6 D
5 D
V
DS
40
V
R
DS(on),max
I
D
2.5
40
m
Ω
A
Q
OSS
33
nC
nC
Q
G
(0V..10V)
37
Typeꢀ/ꢀOrderingꢀCode
Package
PG-TSDSON-8 FL
Marking
RelatedꢀLinks
BSZ025N04LS
025N04L
–
1)
J-STD20 and JESD22
Final Data Sheet
2
Rev.ꢀ2.1,ꢀꢀ2014-06-27
OptiMOS
TM
ꢀPower-MOSFET,ꢀ40ꢀV
BSZ025N04LS
TableꢀofꢀContents
Description .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Maximum ratings
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
4
Thermal characteristics
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
5
Electrical characteristics diagrams
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
7
Package Outlines
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
11
Revision History
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
12
Disclaimer .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
12
Final Data Sheet
3
Rev.ꢀ2.1,ꢀꢀ2014-06-27
OptiMOS
TM
ꢀPower-MOSFET,ꢀ40ꢀV
BSZ025N04LS
2ꢀꢀꢀꢀꢀMaximumꢀratings
atꢀ
T
j
ꢀ=ꢀ25ꢀ°C,ꢀunlessꢀotherwiseꢀspecified
Tableꢀ2ꢀꢀꢀꢀꢀMaximumꢀratings
Values
Typ.
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Max.
Min.
–
–
–
–
–
–
–
–
–
–
40
40
40
40
22
V
GS
=10ꢀV,ꢀ
T
C
=25ꢀ°C
V
GS
=10ꢀV,ꢀ
T
C
=100ꢀ°C
V
GS
=4.5ꢀV,ꢀ
T
C
=25ꢀ°C
Continuous drain current
I
D
A
V
GS
=4.5ꢀV,ꢀ
T
C
=100ꢀ°C
V
GS
=10ꢀV,ꢀ
T
A
=25ꢀ°C,ꢀ
R
thJA
=60ꢀK/W
1)
Pulsed drain current
2)
I
D,pulse
I
AS
–
–
–
–
–
160
20
A
T
C
=25ꢀ°C
Avalanche current, single pulse
3)
Avalanche energy, single pulse
Gate source voltage
–
A
T
C
=25ꢀ°C
E
AS
V
GS
–
130
20
mJ
V
I
D
=20ꢀA,ꢀ
R
GS
=25ꢀ
Ω
-20
–
–
–
–
–
69
2.1
T
C
=25ꢀ°C
Power dissipation
P
tot
W
T
A
=25ꢀ°C,ꢀ
R
thJA
=60ꢀK/W
1)
IEC climatic category;
DIN IEC 68-1: 55/150/56
Operating and storage temperature
T
j
,ꢀ
T
stg
-55
–
150
°C
3ꢀꢀꢀꢀꢀThermalꢀcharacteristics
Tableꢀ3ꢀꢀꢀꢀꢀThermalꢀcharacteristics
Values
Typ.
1.1
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Thermal resistance, junction – case
R
thJC
R
thJA
–
1.8
K/W
K/W
–
–
Device on PCB,
–
–
60
6 cm
2
cooling area
1)
1)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm
2
(one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
2)
See figure 3 for more detailed information
3)
See figure 13 for more detailed information
Final Data Sheet
4
Rev.ꢀ2.1,ꢀꢀ2014-06-27
OptiMOS
TM
ꢀPower-MOSFET,ꢀ40ꢀV
BSZ025N04LS
4ꢀꢀꢀꢀꢀElectricalꢀcharacteristics
Tableꢀ4ꢀꢀꢀꢀꢀStaticꢀcharacteristics
Values
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Max.
Min.
40
Typ.
Drain-source breakdown voltage
Gate threshold voltage
V
(BR)DSS
V
GS(th)
–
–
–
V
V
V
GS
=0ꢀV,ꢀ
I
D
=1ꢀmA
1.2
2
V
DS
=
V
GS
,ꢀ
I
D
=250ꢀµA
–
–
0.1
10
1
100
V
DS
=40ꢀV,ꢀ
V
GS
=0ꢀV,ꢀ
T
j
=25ꢀ°C
V
DS
=40ꢀV,ꢀ
V
GS
=0ꢀV,ꢀ
T
j
=125ꢀ°C
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
I
DSS
µA
nA
I
GSS
–
10
100
V
GS
=20ꢀV,ꢀ
V
DS
=0ꢀV
–
–
2.4
2.0
3.2
2.5
V
GS
=4.5ꢀV,ꢀ
I
D
=20ꢀA
V
GS
=10ꢀV,ꢀ
I
D
=20ꢀA
R
DS(on)
m
Ω
Gate resistance
1)
Transconductance
R
G
g
fs
–
1.1
2.2
–
Ω
–
55
110
S
|
V
DS
|>2|
I
D
|
R
DS(on)max
,ꢀ
I
D
=20ꢀA
Tableꢀ5ꢀꢀꢀꢀꢀDynamicꢀcharacteristics
Values
Typ.
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Input capacitance
1)
Output capacitance
1)
Reverse transfer capacitance
1)
C
iss
C
oss
C
rss
–
–
–
2630 3680 pF
V
GS
=0ꢀV,ꢀ
V
DS
=20ꢀV,ꢀ
f
=1ꢀMHz
V
GS
=0ꢀV,ꢀ
V
DS
=20ꢀV,ꢀ
f
=1ꢀMHz
V
GS
=0ꢀV,ꢀ
V
DS
=20ꢀV,ꢀ
f
=1ꢀMHz
750
60
1050 pF
120
–
pF
ns
V
DD
=20ꢀV,ꢀ
V
GS
=10ꢀV,ꢀ
I
D
=20ꢀA,
R
G,ext
,ext=1.6ꢀ
Ω
Turn-on delay time
Rise time
t
d(on)
t
r
t
d(off)
t
f
–
–
–
–
6
V
DD
=20ꢀV,ꢀ
V
GS
=10ꢀV,ꢀ
I
D
=20ꢀA,
R
G,ext
,ext=1.6ꢀ
Ω
7
–
–
–
ns
ns
ns
V
DD
=20ꢀV,ꢀ
V
GS
=10ꢀV,ꢀ
I
D
=20ꢀA,
R
G,ext
,ext=1.6ꢀ
Ω
Turn-off delay time
Fall time
27
5
V
DD
=20ꢀV,ꢀ
V
GS
=10ꢀV,ꢀ
I
D
=20ꢀA,
R
G,ext
,ext=1.6ꢀ
Ω
1)
Defined by design. Not subject to production test
Final Data Sheet
5
Rev.ꢀ2.1,ꢀꢀ2014-06-27
OptiMOS
TM
ꢀPower-MOSFET,ꢀ40ꢀV
BSZ025N04LS
Tableꢀ6ꢀꢀꢀꢀꢀGateꢀchargeꢀcharacteristics
1)
ꢀ
Values
Typ.
6.3
4.2
6.0
8.1
37
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Max.
Min.
Gate to source charge
Gate charge at threshold
Gate to drain charge
2)
Switching charge
Q
gs
–
–
–
–
–
–
–
–
–
–
nC
nC
nC
nC
nC
V
V
DD
=20ꢀV,ꢀ
I
D
=20ꢀA,ꢀ
V
GS
=0ꢀtoꢀ10ꢀV
V
DD
=20ꢀV,ꢀ
I
D
=20ꢀA,ꢀ
V
GS
=0ꢀtoꢀ10ꢀV
V
DD
=20ꢀV,ꢀ
I
D
=20ꢀA,ꢀ
V
GS
=0ꢀtoꢀ10ꢀV
V
DD
=20ꢀV,ꢀ
I
D
=20ꢀA,ꢀ
V
GS
=0ꢀtoꢀ10ꢀV
V
DD
=20ꢀV,ꢀ
I
D
=20ꢀA,ꢀ
V
GS
=0ꢀtoꢀ10ꢀV
V
DD
=20ꢀV,ꢀ
I
D
=20ꢀA,ꢀ
V
GS
=0ꢀtoꢀ10ꢀV
V
DD
=20ꢀV,ꢀ
I
D
=20ꢀA,ꢀ
V
GS
=0ꢀtoꢀ4.5ꢀV
V
DS
=0.1ꢀV,ꢀ
V
GS
=0ꢀtoꢀ10ꢀV
Q
g(th)
Q
gd
–
8.4
–
Q
sw
Gate charge total
2)
Q
g
52
–
Gate plateau voltage
Gate charge total
2)
V
plateau
Q
g
2.4
19
27
–
nC
nC
nC
Gate charge total, sync. FET
Output charge
2)
Q
g(sync)
Q
oss
32
33
46
V
DD
=20ꢀV,ꢀ
V
GS
=0ꢀV
Tableꢀ7ꢀꢀꢀꢀꢀReverseꢀdiode
Values
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Typ.
–
Max.
40
160
1
Diode continuous forward current
Diode pulse current
I
S
–
–
–
–
–
A
T
C
=25ꢀ°C
I
S,pulse
V
SD
t
rr
–
A
T
C
=25ꢀ°C
Diode forward voltage
0.8
24
20
V
V
GS
=0ꢀV,ꢀ
I
F
=20ꢀA,ꢀ
T
j
=25ꢀ°C
V
R
=20ꢀV,ꢀ
I
F
=20A,ꢀd
i
F
/d
t
=400ꢀA/µs
V
R
=20ꢀV,ꢀ
I
F
=20A,ꢀd
i
F
/d
t
=400ꢀA/µs
Reverse recovery time
2)
Reverse recovery charge
2)
48
–
ns
nC
Q
rr
1)
See
″
Gate charge waveforms
″
for parameter definition
2)
Defined by design. Not subject to production test
Final Data Sheet
6
Rev.ꢀ2.1,ꢀꢀ2014-06-27
OptiMOS
TM
ꢀPower-MOSFET,ꢀ40ꢀV
BSZ025N04LS
5ꢀꢀꢀꢀꢀElectricalꢀcharacteristicsꢀdiagrams
Diagramꢀ1:ꢀPowerꢀdissipation
Diagramꢀ2:ꢀDrainꢀcurrent
80
50
40
30
20
10
0
70
60
50
40
30
20
10
0
0
40
80
120
160
0
40
80
120
160
T
C
ꢀ[°C]
T
C
ꢀ[°C]
P
tot
=f(
T
C
)
I
D
=f(
T
C
);ꢀ
V
GS
≥
10ꢀV
Diagramꢀ3:ꢀSafeꢀoperatingꢀarea
Diagramꢀ4:ꢀMax.ꢀtransientꢀthermalꢀimpedance
10
3
10
1
10
2
10
1
10
0
10
-1
10
0
10
-1
10
-2
10
-3
0.5
1 µs
10 µs
0.2
0.1
100 µs
1 ms
10 ms
DC
0.05
0.02
0.01
single pulse
10
-1
10
0
10
1
10
2
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
V
DS
ꢀ[V]
t
p
ꢀ[s]
I
D
=f(
V
DS
);ꢀ
T
C
=25ꢀ°C;ꢀ
D
=0;ꢀparameter:ꢀ
t
p
Z
thJC
=f(
t
p
);ꢀparameter:ꢀ
D
=
t
p
/
T
Final Data Sheet
7
Rev.ꢀ2.1,ꢀꢀ2014-06-27
OptiMOS
TM
ꢀPower-MOSFET,ꢀ40ꢀV
BSZ025N04LS
Diagramꢀ5:ꢀTyp.ꢀoutputꢀcharacteristics
Diagramꢀ6:ꢀTyp.ꢀdrain-sourceꢀonꢀresistance
160
5
5 V
4 V
3.2 V
10 V
2.8 V
3.5 V
4.5 V
140
3 V
4
3.2 V
120
100
80
60
40
20
0
3 V
3.5 V
3
4 V
4.5 V
5 V
2.8 V
2
1
0
10 V
0.0
0.2
0.4
0.6
0.8
1.0
0
40
80
120
160
V
DS
ꢀ[V]
I
D
ꢀ[A]
I
D
=f(
V
DS
);ꢀ
T
j
=25ꢀ°C;ꢀparameter:ꢀ
V
GS
R
DS(on)
=f(
I
D
);ꢀ
T
j
=25ꢀ°C;ꢀparameter:ꢀ
V
GS
Diagramꢀ7:ꢀTyp.ꢀtransferꢀcharacteristics
Diagramꢀ8:ꢀTyp.ꢀforwardꢀtransconductance
160
160
120
80
120
80
40
0
40
150 °C
25 °C
0
0
1
2
3
4
0
10
20
30
40
V
GS
ꢀ[V]
I
D
ꢀ[A]
I
D
=f(
V
GS
);ꢀ|
V
DS
|>2|
I
D
|
R
DS(on)max
;ꢀparameter:ꢀ
T
j
g
fs
=f(
I
D
);ꢀ
T
j
=25ꢀ°C
Final Data Sheet
8
Rev.ꢀ2.1,ꢀꢀ2014-06-27
OptiMOS
TM
ꢀPower-MOSFET,ꢀ40ꢀV
BSZ025N04LS
Diagramꢀ9:ꢀDrain-sourceꢀon-stateꢀresistance
Diagramꢀ10:ꢀTyp.ꢀgateꢀthresholdꢀvoltage
5
2.5
2.0
1.5
1.0
0.5
0.0
4
3
max
typ
2
1
0
-60
-20
20
60
100
140
180
-60
-20
20
60
100
140
180
T
j
ꢀ[°C]
T
j
ꢀ[°C]
R
DS(on)
=f(
T
j
);ꢀ
I
D
=20ꢀA;ꢀ
V
GS
=10ꢀV
V
GS(th)
=f(
T
j
);ꢀ
V
GS
=
V
DS
;ꢀ
I
D
=250ꢀµA
Diagramꢀ11:ꢀTyp.ꢀcapacitances
Diagramꢀ12:ꢀForwardꢀcharacteristicsꢀofꢀreverseꢀdiode
10
4
10
3
25 °C
150 °C
25 °C max
150 °C max
Ciss
10
3
10
2
10
1
10
2
10
1
10
0
Coss
Crss
0
10
20
30
40
0.0
0.5
1.0
1.5
V
DS
ꢀ[V]
V
SD
ꢀ[V]
C
=f(
V
DS
);ꢀ
V
GS
=0ꢀV;ꢀ
f
=1ꢀMHz
I
F
=f(
V
SD
);ꢀparameter:ꢀ
T
j
Final Data Sheet
9
Rev.ꢀ2.1,ꢀꢀ2014-06-27
OptiMOS
TM
ꢀPower-MOSFET,ꢀ40ꢀV
BSZ025N04LS
Diagramꢀ13:ꢀAvalancheꢀcharacteristics
Diagramꢀ14:ꢀTyp.ꢀgateꢀcharge
10
2
12
10
8
20 V
8 V
32 V
25 °C
10
1
6
100 °C
125 °C
4
2
10
0
0
10
0
10
1
10
2
10
3
0
10
20
30
40
t
AV
ꢀ[µs]
Q
gate
ꢀ[nC]
I
AS
=f(
t
AV
);ꢀ
R
GS
=25ꢀ
Ω
;ꢀparameter:ꢀ
T
j(start)
V
GS
=f(
Q
gate
);ꢀ
I
D
=20ꢀAꢀpulsed;ꢀparameter:ꢀ
V
DD
Diagramꢀ15:ꢀDrain-sourceꢀbreakdownꢀvoltage
Gate charge waveforms
46
44
42
40
38
36
34
32
30
-60
-20
20
60
100
140
T
j
ꢀ[°C]
V
BR(DSS)
=f(
T
j
);ꢀ
I
D
=1ꢀmA
Final Data Sheet
10
Rev.ꢀ2.1,ꢀꢀ2014-06-27
OptiMOS
TM
ꢀPower-MOSFET,ꢀ40ꢀV
BSZ025N04LS
6ꢀꢀꢀꢀꢀPackageꢀOutlines
Figureꢀ1ꢀꢀꢀꢀꢀOutlineꢀPG-TSDSON-8ꢀFL,ꢀdimensionsꢀinꢀmm/inches
Final Data Sheet
11
Rev.ꢀ2.1,ꢀꢀ2014-06-27
OptiMOS
TM
ꢀPower-MOSFET,ꢀ40ꢀV
BSZ025N04LS
RevisionꢀHistory
BSZ025N04LS
Revision:ꢀ2014-06-27,ꢀRev.ꢀ2.1
Previous Revision
Revision Date
2.1
Subjects (major changes since last revision)
Rev. 2.1
2014-06-27
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©ꢀ2014ꢀInfineonꢀTechnologiesꢀAG
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LegalꢀDisclaimer
Theꢀinformationꢀgivenꢀinꢀthisꢀdocumentꢀshallꢀinꢀnoꢀeventꢀbeꢀregardedꢀasꢀaꢀguaranteeꢀofꢀconditionsꢀorꢀcharacteristics.ꢀWith
respectꢀtoꢀanyꢀexamplesꢀorꢀhintsꢀgivenꢀherein,ꢀanyꢀtypicalꢀvaluesꢀstatedꢀhereinꢀand/orꢀanyꢀinformationꢀregardingꢀtheꢀapplication
ofꢀtheꢀdevice,ꢀInfineonꢀTechnologiesꢀherebyꢀdisclaimsꢀanyꢀandꢀallꢀwarrantiesꢀandꢀliabilitiesꢀofꢀanyꢀkind,ꢀincludingꢀwithout
limitation,ꢀwarrantiesꢀofꢀnon-infringementꢀofꢀintellectualꢀpropertyꢀrightsꢀofꢀanyꢀthirdꢀparty.
Information
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Warnings
Dueꢀtoꢀtechnicalꢀrequirements,ꢀcomponentsꢀmayꢀcontainꢀdangerousꢀsubstances.ꢀForꢀinformationꢀonꢀtheꢀtypesꢀinꢀquestion,
pleaseꢀcontactꢀtheꢀnearestꢀInfineonꢀTechnologiesꢀOffice.
TheꢀInfineonꢀTechnologiesꢀcomponentꢀdescribedꢀinꢀthisꢀDataꢀSheetꢀmayꢀbeꢀusedꢀinꢀlife-supportꢀdevicesꢀorꢀsystemsꢀand/or
automotive,ꢀaviationꢀandꢀaerospaceꢀapplicationsꢀorꢀsystemsꢀonlyꢀwithꢀtheꢀexpressꢀwrittenꢀapprovalꢀofꢀInfineonꢀTechnologies,ꢀifꢀa
failureꢀofꢀsuchꢀcomponentsꢀcanꢀreasonablyꢀbeꢀexpectedꢀtoꢀcauseꢀtheꢀfailureꢀofꢀthatꢀlife-support,ꢀautomotive,ꢀaviationꢀand
aerospaceꢀdeviceꢀorꢀsystemꢀorꢀtoꢀaffectꢀtheꢀsafetyꢀorꢀeffectivenessꢀofꢀthatꢀdeviceꢀorꢀsystem.ꢀLifeꢀsupportꢀdevicesꢀorꢀsystemsꢀare
intendedꢀtoꢀbeꢀimplantedꢀinꢀtheꢀhumanꢀbodyꢀorꢀtoꢀsupportꢀand/orꢀmaintainꢀandꢀsustainꢀand/orꢀprotectꢀhumanꢀlife.ꢀIfꢀtheyꢀfail,ꢀitꢀis
reasonableꢀtoꢀassumeꢀthatꢀtheꢀhealthꢀofꢀtheꢀuserꢀorꢀotherꢀpersonsꢀmayꢀbeꢀendangered.
Final Data Sheet
12
Rev.ꢀ2.1,ꢀꢀ2014-06-27
