Infineon-Technologies-BSZ097N10NS5
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BSZ097N10NS5
MOSFET
OptiMOS
TM
5ꢀPower-Transistor,ꢀ100ꢀV
TSDSON-8ꢀFL
(enlarged source interconnection)
Features
•ꢀIdealꢀforꢀhighꢀfrequencyꢀswitching
•ꢀOptimizedꢀtechnologyꢀforꢀDC/DCꢀconverters
•ꢀExcellentꢀgateꢀchargeꢀxꢀ
R
DS(on)
ꢀproductꢀ(FOM)
•ꢀN-channel,ꢀLogicꢀlevel
•ꢀ100%ꢀavalancheꢀtested
•ꢀPb-freeꢀplating;ꢀRoHSꢀcompliant
•ꢀQualifiedꢀaccordingꢀtoꢀJEDEC
1)
ꢀꢀforꢀtargetꢀapplications
•ꢀHalogen-freeꢀaccordingꢀtoꢀIEC61249-2-21
Tableꢀ1ꢀꢀꢀꢀꢀKeyꢀPerformanceꢀParameters
S 1
S 2
S 3
G 4
8 D
7 D
Parameter
Value
100
9.7
Unit
V
DS
V
6 D
5 D
R
DS(on),max
I
D
m
Ω
A
40
Typeꢀ/ꢀOrderingꢀCode
Package
PG-TSDSON-8 FL
Marking
RelatedꢀLinks
BSZ097N10NS5
097N10N
–
1)
J-STD20 and JESD22
Final Data Sheet
1
Rev.ꢀ2.3,ꢀꢀ2017-01-26
OptiMOS
TM
5ꢀPower-Transistor,ꢀ100ꢀV
BSZ097N10NS5
TableꢀofꢀContents
Description .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Maximum ratings
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
3
Thermal characteristics
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
4
Electrical characteristics diagrams
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
6
Package Outlines
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
10
Revision History
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
11
Trademarks .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
11
Disclaimer .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
11
Final Data Sheet
2
Rev.ꢀ2.3,ꢀꢀ2017-01-26
OptiMOS
TM
5ꢀPower-Transistor,ꢀ100ꢀV
BSZ097N10NS5
1ꢀꢀꢀꢀꢀMaximumꢀratings
atꢀ
T
A
=25ꢀ°C,ꢀunlessꢀotherwiseꢀspecified
Tableꢀ2ꢀꢀꢀꢀꢀMaximumꢀratings
Values
Typ.
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
–
–
–
–
–
–
40
39
11
V
GS
=10ꢀV,ꢀ
T
C
=25ꢀ°C
Continuous drain current
I
D
A
V
GS
=10ꢀV,ꢀ
T
C
=100ꢀ°C
V
GS
=10ꢀV,ꢀ
T
A
=25ꢀ°C,ꢀ
R
thJA
=60ꢀK/W
1)
Pulsed drain current
2)
Avalanche energy, single pulse
3)
I
D,pulse
E
AS
–
–
–
–
160
97
A
T
C
=25ꢀ°C
–
mJ
V
I
D
=20ꢀA,ꢀ
R
GS
=25ꢀ
Ω
Gate source voltage
V
GS
-20
20
–
–
–
–
–
69
2.1
T
C
=25ꢀ°C
Power dissipation
P
tot
W
T
A
=25ꢀ°C,ꢀ
R
thJA
=60ꢀK/W
1)
IEC climatic category;
DIN IEC 68-1: 55/150/56
Operating and storage temperature
T
j
,ꢀ
T
stg
-55
–
150
°C
2ꢀꢀꢀꢀꢀThermalꢀcharacteristics
Tableꢀ3ꢀꢀꢀꢀꢀThermalꢀcharacteristics
Values
Typ.
1.1
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Thermal resistance, junction – case
R
thJC
R
thJA
–
1.8
K/W
K/W
–
–
Device on PCB,
–
–
60
6 cm
2
cooling area
1)
1)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
2)
See Diagram 3 for more detailed information
3)
See Diagram 13 for more detailed information
Final Data Sheet
3
Rev.ꢀ2.3,ꢀꢀ2017-01-26
OptiMOS
TM
5ꢀPower-Transistor,ꢀ100ꢀV
BSZ097N10NS5
3ꢀꢀꢀꢀꢀElectricalꢀcharacteristics
Tableꢀ4ꢀꢀꢀꢀꢀStaticꢀcharacteristics
Values
Typ.
–
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
100
2.2
Max.
–
Drain-source breakdown voltage
Gate threshold voltage
V
(BR)DSS
V
GS(th)
V
V
V
GS
=0ꢀV,ꢀ
I
D
=1ꢀmA
V
DS
=
V
GS
,ꢀ
I
D
=36ꢀµA
3.0
3.8
–
–
0.1
10
1
100
V
DS
=100ꢀV,ꢀ
V
GS
=0ꢀV,ꢀ
T
j
=25ꢀ°C
V
DS
=100ꢀV,ꢀ
V
GS
=0ꢀV,ꢀ
T
j
=125ꢀ°C
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
I
DSS
µA
nA
I
GSS
–
10
100
V
GS
=20ꢀV,ꢀ
V
DS
=0ꢀV
–
–
10.3
8.3
13.0
9.7
V
GS
=6ꢀV,ꢀ
I
D
=5ꢀA
V
GS
=10ꢀV,ꢀ
I
D
=20ꢀA
R
DS(on)
m
Ω
Gate resistance
1)
Transconductance
R
G
g
fs
–
1.2
46
1.8
–
Ω
–
23
S
|
V
DS
|>2|
I
D
|
R
DS(on)max
,ꢀ
I
D
=20ꢀA
Tableꢀ5ꢀꢀꢀꢀꢀDynamicꢀcharacteristics
Values
Typ.
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Input capacitance
1)
Output capacitance
1)
Reverse transfer capacitance
1)
C
iss
C
oss
C
rss
–
–
–
1600 2080 pF
V
GS
=0ꢀV,ꢀ
V
DS
=50ꢀV,ꢀ
f
=1ꢀMHz
V
GS
=0ꢀV,ꢀ
V
DS
=50ꢀV,ꢀ
f
=1ꢀMHz
V
GS
=0ꢀV,ꢀ
V
DS
=50ꢀV,ꢀ
f
=1ꢀMHz
250
12
325
21
pF
pF
V
DD
=50ꢀV,ꢀ
V
GS
=10ꢀV,ꢀ
I
D
=20ꢀA,
R
G,ext
=3ꢀ
Ω
Turn-on delay time
Rise time
t
d(on)
t
r
t
d(off)
t
f
–
–
–
–
11
5
–
–
–
–
ns
ns
ns
ns
V
DD
=50ꢀV,ꢀ
V
GS
=10ꢀV,ꢀ
I
D
=20ꢀA,
R
G,ext
=3ꢀ
Ω
V
DD
=50ꢀV,ꢀ
V
GS
=10ꢀV,ꢀ
I
D
=20ꢀA,
R
G,ext
=3ꢀ
Ω
Turn-off delay time
Fall time
21
5
V
DD
=50ꢀV,ꢀ
V
GS
=10ꢀV,ꢀ
I
D
=20ꢀA,
R
G,ext
=3ꢀ
Ω
Tableꢀ6ꢀꢀꢀꢀꢀGateꢀchargeꢀcharacteristics
2)
ꢀ
Values
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Typ.
7
Max.
Gate to source charge
Gate charge at threshold
Gate to drain charge
1)
Switching charge
Gate charge total
1)
Gate plateau voltage
Output charge
1)
Q
gs
–
–
–
–
–
–
–
–
nC
nC
nC
nC
nC
V
V
DD
=50ꢀV,ꢀ
I
D
=20ꢀA,ꢀ
V
GS
=0ꢀtoꢀ10ꢀV
V
DD
=50ꢀV,ꢀ
I
D
=20ꢀA,ꢀ
V
GS
=0ꢀtoꢀ10ꢀV
V
DD
=50ꢀV,ꢀ
I
D
=20ꢀA,ꢀ
V
GS
=0ꢀtoꢀ10ꢀV
V
DD
=50ꢀV,ꢀ
I
D
=20ꢀA,ꢀ
V
GS
=0ꢀtoꢀ10ꢀV
V
DD
=50ꢀV,ꢀ
I
D
=20ꢀA,ꢀ
V
GS
=0ꢀtoꢀ10ꢀV
V
DD
=50ꢀV,ꢀ
I
D
=20ꢀA,ꢀ
V
GS
=0ꢀtoꢀ10ꢀV
V
DD
=50ꢀV,ꢀ
V
GS
=0ꢀV
Q
g(th)
Q
gd
4
–
5
8
–
Q
sw
7
Q
g
22
4.6
30
28
–
V
plateau
Q
oss
40
nC
1)
Defined by design. Not subject to production test
2)
See
″
Gate charge waveforms
″
for parameter definition
Final Data Sheet
4
Rev.ꢀ2.3,ꢀꢀ2017-01-26
OptiMOS
TM
5ꢀPower-Transistor,ꢀ100ꢀV
BSZ097N10NS5
Tableꢀ7ꢀꢀꢀꢀꢀReverseꢀdiode
Values
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Typ.
–
Max.
40
Diode continuous forward current
Diode pulse current
I
S
–
–
–
–
–
A
T
C
=25ꢀ°C
I
S,pulse
V
SD
t
rr
–
160
1.2
85
A
T
C
=25ꢀ°C
Diode forward voltage
0.9
43
60
V
V
GS
=0ꢀV,ꢀ
I
F
=20ꢀA,ꢀ
T
j
=25ꢀ°C
V
R
=50ꢀV,ꢀ
I
F
=20ꢀA,ꢀd
i
F
/d
t
=100ꢀA/µs
V
R
=50ꢀV,ꢀ
I
F
=20ꢀA,ꢀd
i
F
/d
t
=100ꢀA/µs
Reverse recovery time
1)
Reverse recovery charge
1)
ns
nC
Q
rr
120
1)
Defined by design. Not subject to production test
Final Data Sheet
5
Rev.ꢀ2.3,ꢀꢀ2017-01-26
OptiMOS
TM
5ꢀPower-Transistor,ꢀ100ꢀV
BSZ097N10NS5
4ꢀꢀꢀꢀꢀElectricalꢀcharacteristicsꢀdiagrams
Diagramꢀ1:ꢀPowerꢀdissipation
Diagramꢀ2:ꢀDrainꢀcurrent
80
45
40
35
30
25
20
15
10
5
70
60
50
40
30
20
10
0
0
0
25
50
75
100
125
150
175
0
25
50
75
100
125
150
175
T
C
ꢀ[°C]
T
C
ꢀ[°C]
P
tot
=f(
T
C
)
I
D
=f(
T
C
);ꢀ
V
GS
≥
10ꢀV
Diagramꢀ3:ꢀSafeꢀoperatingꢀarea
Diagramꢀ4:ꢀMax.ꢀtransientꢀthermalꢀimpedance
10
3
10
1
1 µs
10
2
10
0
10 µs
0.5
0.2
0.1
100 µs
10
1
DC
0.05
10
-1
1 ms
0.02
10
0
0.01
10 ms
single pulse
10
-1
10
-2
10
-1
10
0
10
1
10
2
10
3
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
V
DS
ꢀ[V]
t
p
ꢀ[s]
I
D
=f(
V
DS
);ꢀ
T
C
=25ꢀ°C;ꢀ
D
=0;ꢀparameter:ꢀ
t
p
Z
thJC
=f(
t
p
);ꢀparameter:ꢀ
D
=
t
p
/
T
Final Data Sheet
6
Rev.ꢀ2.3,ꢀꢀ2017-01-26
OptiMOS
TM
5ꢀPower-Transistor,ꢀ100ꢀV
BSZ097N10NS5
Diagramꢀ5:ꢀTyp.ꢀoutputꢀcharacteristics
Diagramꢀ6:ꢀTyp.ꢀdrain-sourceꢀonꢀresistance
160
32
8 V
140
28
7 V
10 V
6 V
120
100
24
4.5 V
20
5 V
5.5 V
80
16
5.5 V
60
12
6 V
7 V
5 V
10 V
40
8
20
4
4.5 V
4 V
0
0
0
1
2
3
4
5
0
20
40
60
80
100
V
DS
ꢀ[V]
I
D
ꢀ[A]
I
D
=f(
V
DS
);ꢀ
T
j
=25ꢀ°C;ꢀparameter:ꢀ
V
GS
R
DS(on)
=f(
I
D
);ꢀ
T
j
=25ꢀ°C;ꢀparameter:ꢀ
V
GS
Diagramꢀ7:ꢀTyp.ꢀtransferꢀcharacteristics
Diagramꢀ8:ꢀTyp.ꢀforwardꢀtransconductance
80
70
60
50
40
30
20
10
0
60
40
20
150 °C
25 °C
0
0
1
2
3
4
5
6
7
0
10
20
30
40
50
V
GS
ꢀ[V]
I
D
ꢀ[A]
I
D
=f(
V
GS
);ꢀ|
V
DS
|>2|
I
D
|
R
DS(on)max
;ꢀparameter:ꢀ
T
j
g
fs
=f(
I
D
);ꢀ
T
j
=25ꢀ°C
Final Data Sheet
7
Rev.ꢀ2.3,ꢀꢀ2017-01-26
OptiMOS
TM
5ꢀPower-Transistor,ꢀ100ꢀV
BSZ097N10NS5
Diagramꢀ9:ꢀDrain-sourceꢀon-stateꢀresistance
Diagramꢀ10:ꢀTyp.ꢀgateꢀthresholdꢀvoltage
20
4.0
3.5
360 µA
15
3.0
2.5
2.0
1.5
1.0
0.5
0.0
36 µA
max
10
Typ
5
0
-60
-20
20
60
100
140
180
-60
-20
20
60
100
140
180
T
j
ꢀ[°C]
T
j
ꢀ[°C]
R
DS(on)
=f(
T
j
);ꢀ
I
D
=20ꢀA;ꢀ
V
GS
=10ꢀV
V
GS(th)
=f(
T
j
);ꢀ
V
GS
=
V
DS
Diagramꢀ11:ꢀTyp.ꢀcapacitances
Diagramꢀ12:ꢀForwardꢀcharacteristicsꢀofꢀreverseꢀdiode
10
4
10
3
25 °C
150 °C
25 °C max
150 °C max
Ciss
10
3
10
2
10
1
10
0
10
2
10
1
10
0
Coss
Crss
0
20
40
60
80
0.0
0.5
1.0
1.5
2.0
V
DS
ꢀ[V]
V
SD
ꢀ[V]
C
=f(
V
DS
);ꢀ
V
GS
=0ꢀV;ꢀ
f
=1ꢀMHz
I
F
=f(
V
SD
);ꢀparameter:ꢀ
T
j
Final Data Sheet
8
Rev.ꢀ2.3,ꢀꢀ2017-01-26
OptiMOS
TM
5ꢀPower-Transistor,ꢀ100ꢀV
BSZ097N10NS5
Diagramꢀ13:ꢀAvalancheꢀcharacteristics
Diagramꢀ14:ꢀTyp.ꢀgateꢀcharge
10
2
10
80 V
9
8
7
6
5
4
3
2
1
0
50 V
20 V
10
1
25 °C
100 °C
125 °C
10
0
10
-1
10
0
10
1
10
2
10
3
0
5
10
15
20
25
30
t
AV
ꢀ[µs]
Q
gate
ꢀ[nC]
I
AS
=f(
t
AV
);ꢀ
R
GS
=25ꢀ
Ω
;ꢀparameter:ꢀ
T
j(start)
V
GS
=f(
Q
gate
);ꢀ
I
D
=20ꢀAꢀpulsed;ꢀparameter:ꢀ
V
DD
Diagramꢀ15:ꢀDrain-sourceꢀbreakdownꢀvoltage
Gate charge waveforms
110
105
100
95
90
-60
-20
20
60
100
140
180
T
j
ꢀ[°C]
V
BR(DSS)
=f(
T
j
);ꢀ
I
D
=1ꢀmA
Final Data Sheet
9
Rev.ꢀ2.3,ꢀꢀ2017-01-26
OptiMOS
TM
5ꢀPower-Transistor,ꢀ100ꢀV
BSZ097N10NS5
5ꢀꢀꢀꢀꢀPackageꢀOutlines
Figureꢀ1ꢀꢀꢀꢀꢀOutlineꢀPG-TSDSON-8ꢀFL,ꢀdimensionsꢀinꢀmm/inches
Final Data Sheet
10
Rev.ꢀ2.3,ꢀꢀ2017-01-26
OptiMOS
TM
5ꢀPower-Transistor,ꢀ100ꢀV
BSZ097N10NS5
RevisionꢀHistory
BSZ097N10NS5
Revision:ꢀ2017-01-26,ꢀRev.ꢀ2.3
Previous Revision
Revision Date
Subjects (major changes since last revision)
2.1
2.2
2.3
Release of Final Version
2014-05-05
2016-09-23
2017-01-26
Update Avalanche Energy
Update Id at Tc=100°C and Ta=25°C
TrademarksꢀofꢀInfineonꢀTechnologiesꢀAG
AURIX™,ꢀC166™,ꢀCanPAK™,ꢀCIPOS™,ꢀCoolGaN™,ꢀCoolMOS™,ꢀCoolSET™,ꢀCoolSiC™,ꢀCORECONTROL™,ꢀCROSSAVE™,ꢀDAVE™,ꢀDI-POL™,ꢀDrBlade™,
EasyPIM™,ꢀEconoBRIDGE™,ꢀEconoDUAL™,ꢀEconoPACK™,ꢀEconoPIM™,ꢀEiceDRIVER™,ꢀeupec™,ꢀFCOS™,ꢀHITFET™,ꢀHybridPACK™,ꢀInfineon™,
ISOFACE™,ꢀIsoPACK™,ꢀi-Wafer™,ꢀMIPAQ™,ꢀModSTACK™,ꢀmy-d™,ꢀNovalithIC™,ꢀOmniTune™,ꢀOPTIGA™,ꢀOptiMOS™,ꢀORIGA™,ꢀPOWERCODE™,
PRIMARION™,ꢀPrimePACK™,ꢀPrimeSTACK™,ꢀPROFET™,ꢀPRO-SIL™,ꢀRASIC™,ꢀREAL3™,ꢀReverSave™,ꢀSatRIC™,ꢀSIEGET™,ꢀSIPMOS™,ꢀSmartLEWIS™,
SOLIDꢀFLASH™,ꢀSPOC™,ꢀTEMPFET™,ꢀthinQꢁ™,ꢀTRENCHSTOP™,ꢀTriCore™.
TrademarksꢀupdatedꢀAugustꢀ2015
OtherꢀTrademarks
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©ꢀ2017ꢀInfineonꢀTechnologiesꢀAG
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LegalꢀDisclaimer
Theꢀinformationꢀgivenꢀinꢀthisꢀdocumentꢀshallꢀinꢀnoꢀeventꢀbeꢀregardedꢀasꢀaꢀguaranteeꢀofꢀconditionsꢀorꢀcharacteristicsꢀ
(“Beschaffenheitsgarantie”)ꢀ.
Withꢀrespectꢀtoꢀanyꢀexamples,ꢀhintsꢀorꢀanyꢀtypicalꢀvaluesꢀstatedꢀhereinꢀand/orꢀanyꢀinformationꢀregardingꢀtheꢀapplicationꢀofꢀthe
product,ꢀInfineonꢀTechnologiesꢀherebyꢀdisclaimsꢀanyꢀandꢀallꢀwarrantiesꢀandꢀliabilitiesꢀofꢀanyꢀkind,ꢀincludingꢀwithoutꢀlimitation
warrantiesꢀofꢀnon-infringementꢀofꢀintellectualꢀpropertyꢀrightsꢀofꢀanyꢀthirdꢀparty.
Inꢀaddition,ꢀanyꢀinformationꢀgivenꢀinꢀthisꢀdocumentꢀisꢀsubjectꢀtoꢀcustomer’sꢀcomplianceꢀwithꢀitsꢀobligationsꢀstatedꢀinꢀthis
documentꢀandꢀanyꢀapplicableꢀlegalꢀrequirements,ꢀnormsꢀandꢀstandardsꢀconcerningꢀcustomer’sꢀproductsꢀandꢀanyꢀuseꢀofꢀthe
productꢀofꢀInfineonꢀTechnologiesꢀinꢀcustomer’sꢀapplications.
Theꢀdataꢀcontainedꢀinꢀthisꢀdocumentꢀisꢀexclusivelyꢀintendedꢀforꢀtechnicallyꢀtrainedꢀstaff.ꢀItꢀisꢀtheꢀresponsibilityꢀofꢀcustomer’s
technicalꢀdepartmentsꢀtoꢀevaluateꢀtheꢀsuitabilityꢀofꢀtheꢀproductꢀforꢀtheꢀintendedꢀapplicationꢀandꢀtheꢀcompletenessꢀofꢀtheꢀproduct
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Warnings
Dueꢀtoꢀtechnicalꢀrequirements,ꢀcomponentsꢀmayꢀcontainꢀdangerousꢀsubstances.ꢀForꢀinformationꢀonꢀtheꢀtypesꢀinꢀquestion,
pleaseꢀcontactꢀtheꢀnearestꢀInfineonꢀTechnologiesꢀOffice.
TheꢀInfineonꢀTechnologiesꢀcomponentꢀdescribedꢀinꢀthisꢀDataꢀSheetꢀmayꢀbeꢀusedꢀinꢀlife-supportꢀdevicesꢀorꢀsystemsꢀand/or
automotive,ꢀaviationꢀandꢀaerospaceꢀapplicationsꢀorꢀsystemsꢀonlyꢀwithꢀtheꢀexpressꢀwrittenꢀapprovalꢀofꢀInfineonꢀTechnologies,ꢀifꢀa
failureꢀofꢀsuchꢀcomponentsꢀcanꢀreasonablyꢀbeꢀexpectedꢀtoꢀcauseꢀtheꢀfailureꢀofꢀthatꢀlife-support,ꢀautomotive,ꢀaviationꢀand
aerospaceꢀdeviceꢀorꢀsystemꢀorꢀtoꢀaffectꢀtheꢀsafetyꢀorꢀeffectivenessꢀofꢀthatꢀdeviceꢀorꢀsystem.ꢀLifeꢀsupportꢀdevicesꢀorꢀsystemsꢀare
intendedꢀtoꢀbeꢀimplantedꢀinꢀtheꢀhumanꢀbodyꢀorꢀtoꢀsupportꢀand/orꢀmaintainꢀandꢀsustainꢀand/orꢀprotectꢀhumanꢀlife.ꢀIfꢀtheyꢀfail,ꢀitꢀis
reasonableꢀtoꢀassumeꢀthatꢀtheꢀhealthꢀofꢀtheꢀuserꢀorꢀotherꢀpersonsꢀmayꢀbeꢀendangered.
Final Data Sheet
11
Rev.ꢀ2.3,ꢀꢀ2017-01-26
