Infineon-Technologies-FF75R12YT3
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技术信息ꢀ/ꢀTechnicalꢀInformation
IGBT-模块
IGBT-modules
FF75R12YT3
初步数据
PreliminaryꢀData
IGBT,ꢀ逆变器ꢀ/ꢀIGBT,Inverter
最大额定值ꢀ/ꢀMaximumꢀRatedꢀValues
集电极－发射极电压
T
vj
= 25°C
V
CES
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
1200
ꢀ
ꢀ
ꢀ
V
Collector-emitterꢀvoltage
连续集电极直流电流
ContinuousꢀDCꢀcollectorꢀcurrent
T
C
= 80°C, T
vj max
= 150°C
T
C
= 25°C, T
vj max
= 150°C
I
C nom
I
C
75
100
A
A
集电极重复峰值电流
Repetitiveꢀpeakꢀcollectorꢀcurrent
t
P
= 1 ms
I
CRM
P
tot
150
345
A
总功率损耗
Totalꢀpowerꢀdissipation
T
C
= 25°C, T
vj max
= 150
ꢀ
W
栅极－发射极峰值电压
Gate-emitterꢀpeakꢀvoltage
ꢀ
V
GES
+/-20
ꢀ
V
特征值ꢀ/ꢀCharacteristicꢀValues
min. typ. max.
集电极－发射极饱和电压
Collector-emitterꢀsaturationꢀvoltage
I
C
= 75 A, V
GE
= 15 V
I
C
= 75 A, V
GE
= 15 V
T
vj
= 25°C
T
vj
= 125°C
1,80 2,30
2,05
V
V
V
CE sat
V
GEth
Q
G
栅极阈值电压
Gateꢀthresholdꢀvoltage
I
C
= 3,00 mA, V
CE
= V
GE
, T
vj
= 25°C
V
GE
= -15 V … +15 V
5,0
5,8
0,68
3,0
5,00
0,18
ꢀ
6,5
V
µC
Ω
栅极电荷
Gateꢀcharge
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
内部栅极电阻
Internalꢀgateꢀresistor
T
vj
= 25°C
R
Gint
C
ies
输入电容
Inputꢀcapacitance
f = 1 MHz, T
vj
= 25°C, V
CE
= 25 V, V
GE
= 0 V
f = 1 MHz, T
vj
= 25°C, V
CE
= 25 V, V
GE
= 0 V
V
CE
= 1200 V, V
GE
= 0 V, T
vj
= 25°C
V
CE
= 0 V, V
GE
= 20 V, T
vj
= 25°C
nF
nF
反向传输电容
Reverseꢀtransferꢀcapacitance
C
res
I
CES
I
GES
t
d on
集电极-发射极截止电流
Collector-emitterꢀcut-offꢀcurrent
1,0 mA
栅极-发射极漏电流
Gate-emitterꢀleakageꢀcurrent
ꢀ
400 nA
µs
开通延迟时间(电感负载)
Turn-onꢀdelayꢀtime,ꢀinductiveꢀload
I
C
= 75 A, V
CE
= 600 V
V
GE
= ±15 V
R
Gon
= 11
Ω
T
vj
= 25°C
T
vj
= 125°C
0,073
0,075
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
µs
上升时间(电感负载)
Riseꢀtime,ꢀinductiveꢀload
I
C
= 75 A, V
CE
= 600 V
V
GE
= ±15 V
R
Gon
= 11
Ω
T
vj
= 25°C
T
vj
= 125°C
0,024
0,033
µs
µs
t
r
t
d off
t
f
关断延迟时间(电感负载)
Turn-offꢀdelayꢀtime,ꢀinductiveꢀload
I
C
= 75 A, V
CE
= 600 V
V
GE
= ±15 V
R
Goff
= 11
Ω
T
vj
= 25°C
T
vj
= 125°C
0,44
0,53
µs
µs
下降时间(电感负载)
Fallꢀtime,ꢀinductiveꢀload
I
C
= 75 A, V
CE
= 600 V
V
GE
= ±15 V
R
Goff
= 11
Ω
T
vj
= 25°C
T
vj
= 125°C
0,105
0,18
µs
µs
开通损耗能量ꢀ(每脉冲)
Turn-onꢀenergyꢀlossꢀperꢀpulse
I
C
= 75 A, V
CE
= 600 V, L
S
= 40 nH
V
GE
= ±15 V
R
Gon
= 11
Ω
T
vj
= 25°C
T
vj
= 125°C
5,20
7,10
mJ
mJ
E
on
E
off
关断损耗能量ꢀ(每脉冲）
Turn-offꢀenergyꢀlossꢀperꢀpulse
I
C
= 75 A, V
CE
= 600 V, L
S
= 40 nH
V
GE
= ±15 V
R
Goff
= 11
Ω
T
vj
= 25°C
T
vj
= 125°C
5,50
8,60
mJ
mJ
ꢀ
ꢀ
短路数据
SCꢀdata
V
GE
≤
15 V, V
CC
= 900 V
I
SC
ꢀ
V
CEmax
= V
CES
-L
sCE
·di/dt
每个ꢀIGBTꢀ/ꢀperꢀIGBT
每个ꢀIGBTꢀ/ꢀperꢀIGBT
t
P
≤
10 µs,
T
vj
= 125°C
300
A
结－外壳热阻
Thermalꢀresistance,ꢀjunctionꢀtoꢀcase
R
thJC
R
thCH
T
vj op
ꢀ
ꢀ
0,33 0,36 K/W
外壳－散热器热阻
Thermalꢀresistance,ꢀcaseꢀtoꢀheatsink
0,20
K/W
°C
λ
Paste
ꢀ=ꢀ1ꢀW/(m·K)ꢀꢀꢀ/ꢀꢀꢀꢀ
λ
grease
ꢀ=ꢀ1ꢀW/(m·K)
在开关状态下温度
Temperatureꢀunderꢀswitchingꢀconditions
ꢀ
-40
ꢀ
125
preparedꢀby:ꢀAC
approvedꢀby:ꢀMB
dateꢀofꢀpublication:ꢀ2013-10-03
revision:ꢀ2.0
1
技术信息ꢀ/ꢀTechnicalꢀInformation
IGBT-模块
IGBT-modules
FF75R12YT3
初步数据
PreliminaryꢀData
二极管,逆变器ꢀ/ꢀDiode,ꢀInverter
最大额定值ꢀ/ꢀMaximumꢀRatedꢀValues
反向重复峰值电压
T
vj
= 25°C
V
RRM
I
F
I
FRM
I²t
ꢀ
ꢀ
ꢀ
ꢀ
1200
75
ꢀ
ꢀ
ꢀ
V
A
A
Repetitiveꢀpeakꢀreverseꢀvoltage
连续正向直流电流
ContinuousꢀDCꢀforwardꢀcurrent
ꢀ
正向重复峰值电流
Repetitiveꢀpeakꢀforwardꢀcurrent
t
P
= 1 ms
150
1300
I2t-值
I²tꢀ-ꢀvalue
V
R
= 0 V, t
P
= 10 ms, T
vj
= 125°C
ꢀ
A²s
特征值ꢀ/ꢀCharacteristicꢀValues
min. typ. max.
正向电压
Forwardꢀvoltage
I
F
= 75 A, V
GE
= 0 V
I
F
= 75 A, V
GE
= 0 V
T
vj
= 25°C
T
vj
= 125°C
1,75 2,30
1,75
V
V
V
F
反向恢复峰值电流
Peakꢀreverseꢀrecoveryꢀcurrent
I
F
= 75 A, – di
F
/dt = 1000 A/µs (T
vj
=125°C) T
vj
= 25°C
125
125
A
A
V
R
= 600 V
V
GE
= -15 V
T
vj
= 125°C
I
RM
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
恢复电荷
Recoveredꢀcharge
I
F
= 75 A, – di
F
/dt = 1000 A/µs (T
vj
=125°C) T
vj
= 25°C
9,00
15,0
µC
µC
V
R
= 600 V
V
GE
= -15 V
T
vj
= 125°C
Q
r
反向恢复损耗（每脉冲）
Reverseꢀrecoveryꢀenergy
I
F
= 75 A, – di
F
/dt = 1000 A/µs (T
vj
=125°C) T
vj
= 25°C
3,50
6,00
mJ
mJ
V
R
= 600 V
V
GE
= -15 V
T
vj
= 125°C
E
rec
结－外壳热阻
Thermalꢀresistance,ꢀjunctionꢀtoꢀcase
每个二极管ꢀ/ꢀperꢀdiode
每个二极管ꢀ/ꢀperꢀdiode
R
thJC
R
thCH
T
vj op
ꢀ
ꢀ
0,55 0,60 K/W
外壳－散热器热阻
Thermalꢀresistance,ꢀcaseꢀtoꢀheatsink
0,25
K/W
°C
λ
Paste
ꢀ=ꢀ1ꢀW/(m·K)ꢀꢀꢀ/ꢀꢀꢀꢀ
λ
grease
ꢀ=ꢀ1ꢀW/(m·K)
在开关状态下温度
Temperatureꢀunderꢀswitchingꢀconditions
ꢀ
-40
ꢀ
125
负温度系数热敏电阻ꢀ/ꢀNTC-Thermistor
特征值ꢀ/ꢀCharacteristicꢀValues
min. typ. max.
额定电阻值
Ratedꢀresistance
T
C
= 25°C
R
25
∆
R/R
P
25
ꢀ
-5
ꢀ
5,00
ꢀ
ꢀ
k
Ω
R100ꢀꢀ偏差
DeviationꢀofꢀR100
T
C
= 100°C, R
100
= 493
Ω
5
%
耗散功率
Powerꢀdissipation
T
C
= 25°C
ꢀ
20,0 mW
B-值
B-value
R
2
= R
25
exp [B
25/50
(1/T
2
– 1/(298,15 K))]
R
2
= R
25
exp [B
25/80
(1/T
2
– 1/(298,15 K))]
R
2
= R
25
exp [B
25/100
(1/T
2
– 1/(298,15 K))]
B
25/50
B
25/80
B
25/100
ꢀ
3375
t.b.d.
t.b.d.
ꢀ
ꢀ
ꢀ
K
K
K
B-值
B-value
ꢀ
B-值
B-value
ꢀ
根据应用手册标定
Specificationꢀaccordingꢀtoꢀtheꢀvalidꢀapplicationꢀnote.
preparedꢀby:ꢀAC
approvedꢀby:ꢀMB
dateꢀofꢀpublication:ꢀ2013-10-03
revision:ꢀ2.0
2
技术信息ꢀ/ꢀTechnicalꢀInformation
IGBT-模块
IGBT-modules
FF75R12YT3
初步数据
PreliminaryꢀData
模块ꢀ/ꢀModule
绝缘测试电压
Isolationꢀtestꢀvoltage
RMS, f = 50 Hz, t = 1 min
V
ISOL
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
2,5
ꢀ
kV
内部绝缘
Internalꢀisolation
基本绝缘ꢀꢀ(classꢀ1,ꢀIECꢀ61140)
basicꢀinsulationꢀ(classꢀ1,ꢀIECꢀ61140)
ꢀ
Al
2
O
3
ꢀ
ꢀ
爬电距离
Creepageꢀdistance
端子-ꢀ散热片ꢀ/ꢀterminalꢀtoꢀheatsink
端子-ꢀ端子ꢀ/ꢀterminalꢀtoꢀterminal
13,5
7,5
ꢀ
ꢀ
ꢀ
mm
ꢀ
mm
电气间隙
Clearance
端子-ꢀ散热片ꢀ/ꢀterminalꢀtoꢀheatsink
端子-ꢀ端子ꢀ/ꢀterminalꢀtoꢀterminal
12,0
7,5
相对电痕指数
Comperativeꢀtrackingꢀindex
ꢀ
CTI
> 225
ꢀ
ꢀ
min. typ. max.
杂散电感,模块
Strayꢀinductanceꢀmodule
ꢀ
L
sCE
R
CC’+EE’
T
stg
ꢀ
ꢀ
17
1,80
ꢀ
ꢀ
ꢀ
nH
m
Ω
°C
N
模块引线电阻,端子-芯片
Moduleꢀleadꢀresistance,ꢀterminalsꢀ-ꢀchip
T
C
ꢀ=ꢀ25°C,ꢀ每个开关ꢀ/ꢀperꢀswitch
储存温度
Storageꢀtemperature
ꢀ
ꢀ
ꢀ
-40
40
ꢀ
125
80
ꢀ
Anpresskraft für mech. Bef. pro Feder
mountig force per clamp
F
–
重量
Weight
G
36
g
preparedꢀby:ꢀAC
approvedꢀby:ꢀMB
dateꢀofꢀpublication:ꢀ2013-10-03
revision:ꢀ2.0
3
技术信息ꢀ/ꢀTechnicalꢀInformation
IGBT-模块
IGBT-modules
FF75R12YT3
初步数据
PreliminaryꢀData
输出特性ꢀIGBT,ꢀ逆变器ꢀ（典型)
outputꢀcharacteristicꢀIGBT,Inverterꢀ(typical)
输出特性ꢀIGBT,ꢀ逆变器ꢀ（典型)
outputꢀcharacteristicꢀIGBT,Inverterꢀ(typical)
I
C
ꢀ=ꢀfꢀ(V
CE
I
C
ꢀ=ꢀfꢀ(V
CE
)
)
V
GE
ꢀ=ꢀ15ꢀV
T
vj
ꢀ=ꢀ125°C
150
150
T
vj
= 25°C
T
vj
= 125°C
V
GE
= 19V
V
GE
= 17V
V
GE
= 15V
V
GE
= 13V
V
GE
= 11V
V
GE
= 9V
135
120
105
90
135
120
105
90
75
60
45
30
15
0
75
60
45
30
15
0
0,0
0,5
1,0
1,5
2,0
2,5
3,0
3,5
0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0
V
CE
[V]
V
CE
[V]
传输特性ꢀIGBT,ꢀ逆变器ꢀ(典型)
transferꢀcharacteristicꢀꢀIGBT,Inverter(typical)
I
C
ꢀ=ꢀfꢀ(V
GE
开关损耗ꢀIGBT,ꢀ逆变器ꢀ（典型)
switchingꢀlossesꢀꢀIGBT,Inverterꢀ(typical)
E
on
ꢀ=ꢀfꢀ(I
C
),ꢀE
off
ꢀ=ꢀfꢀ(I
C
)
)
V
CE
ꢀ=ꢀ20ꢀV
V
GE
ꢀ=ꢀ±15ꢀV,ꢀR
Gon
ꢀ=ꢀ11ꢀ
Ω
,ꢀR
Goff
ꢀ=ꢀ11ꢀ
Ω
,ꢀV
CE
ꢀ=ꢀ600ꢀV
150
20
T
vj
= 25°C
E
on
, T
vj
= 125°C
T
vj
= 125°C
E
off
, T
vj
= 125°C
135
120
105
90
18
16
14
12
10
8
75
60
45
6
30
4
15
2
0
5
0
6
7
8
9
10
11
12
0
25
50
75
I
C
[A]
100
125
150
V
GE
[V]
preparedꢀby:ꢀAC
approvedꢀby:ꢀMB
dateꢀofꢀpublication:ꢀ2013-10-03
revision:ꢀ2.0
4
技术信息ꢀ/ꢀTechnicalꢀInformation
IGBT-模块
IGBT-modules
FF75R12YT3
初步数据
PreliminaryꢀData
开关损耗ꢀIGBT,ꢀ逆变器ꢀ（典型)
switchingꢀlossesꢀꢀIGBT,Inverterꢀ(typical)
E
on
ꢀ=ꢀfꢀ(R
G
),ꢀE
off
ꢀ=ꢀfꢀ(R
G
)
瞬态热阻抗ꢀꢀIGBT,ꢀ逆变器
transientꢀthermalꢀimpedanceꢀꢀIGBT,Inverter
Z
thJH
ꢀ=ꢀfꢀ(t)
V
GE
ꢀ=ꢀ±15ꢀV,ꢀI
C
ꢀ=ꢀ75ꢀA,ꢀV
CE
ꢀ=ꢀ600ꢀV
40
1
E
on
, T
vj
= 125°C
Z
thJH
: IGBT
E
off
, T
vj
= 125°C
35
30
25
20
15
10
5
0,1
i:
1
2
3
4
r
i
[K/W]: 0,01696 0,03021 0,16059 0,32224
τ
i
[s]:
0,0005 0,005
0,05
0,2
0
0,01
0,001
0
10 20 30 40 50 60 70 80 90
100 110 120
R
G
[
Ω
]
0,01
0,1
t [s]
1
10
反偏安全工作区ꢀꢀIGBT,ꢀ逆变器ꢀ（RBSOA）
正向偏压特性ꢀꢀ二极管,逆变器（典型)
reverseꢀbiasꢀsafeꢀoperatingꢀareaꢀꢀIGBT,Inverterꢀ(RBSOA)
forwardꢀcharacteristicꢀofꢀꢀDiode,ꢀInverterꢀ(typical)
I
C
ꢀ=ꢀfꢀ(V
CE
)
I
F
ꢀ=ꢀfꢀ(V
F
)
V
GE
ꢀ=ꢀ±15ꢀV,ꢀR
Goff
ꢀ=ꢀ11ꢀ
Ω
,ꢀT
vj
ꢀ=ꢀ125°C
175
150
I
C
, Modul
I
C
, Chip
T
vj
= 25°C
T
vj
= 125°C
135
150
125
100
75
120
105
90
75
60
45
30
15
0
50
25
0
0
200
400
600
800
1000 1200 1400
0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4 1,6 1,8 2,0 2,2 2,4
V
CE
[V]
V
F
[V]
preparedꢀby:ꢀAC
approvedꢀby:ꢀMB
dateꢀofꢀpublication:ꢀ2013-10-03
revision:ꢀ2.0
5
技术信息ꢀ/ꢀTechnicalꢀInformation
IGBT-模块
IGBT-modules
FF75R12YT3
初步数据
PreliminaryꢀData
开关损耗ꢀ二极管,逆变器ꢀ（典型)
switchingꢀlossesꢀꢀDiode,ꢀInverterꢀ(typical)
E
rec
ꢀ=ꢀfꢀ(I
F
)
开关损耗ꢀ二极管,逆变器ꢀ（典型)
switchingꢀlossesꢀꢀDiode,ꢀInverterꢀ(typical)
E
rec
ꢀ=ꢀfꢀ(R
G
)
R
Gon
ꢀ=ꢀ11ꢀ
Ω
,ꢀV
CE
ꢀ=ꢀ600ꢀV
I
F
ꢀ=ꢀ75ꢀA,ꢀV
CE
ꢀ=ꢀ600ꢀV
10
8
E
rec
, T
vj
= 125°C
E
rec
, T
vj
= 125°C
9
7
6
5
4
3
2
1
0
8
7
6
5
4
3
2
1
0
0
25
50
75
I
F
[A]
100
125
150
0
10 20 30 40 50 60 70 80 90
100 110 120
R
G
[
Ω
]
瞬态热阻抗ꢀꢀ二极管,逆变器
负温度系数热敏电阻ꢀ温度特性
transientꢀthermalꢀimpedanceꢀꢀDiode,ꢀInverter
NTC-Thermistor-temperatureꢀcharacteristicꢀ(typical)
Z
thJH
ꢀ=ꢀfꢀ(t)
Rꢀ=ꢀfꢀ(T)
1
100000
Z
thJH
: Diode
R
typ
10000
1000
100
0,1
i:
1
2
3
4
r
i
[K/W]: 0,0336 0,076 0,3008 0,3896
τ
i
[s]: 0,0005
0,005 0,05
0,2
0,01
0,001
0,01
0,1
t [s]
1
10
0
20
40
60
80
T
C
[°C]
100 120 140 160
preparedꢀby:ꢀAC
approvedꢀby:ꢀMB
dateꢀofꢀpublication:ꢀ2013-10-03
revision:ꢀ2.0
6
技术信息ꢀ/ꢀTechnicalꢀInformation
IGBT-模块
IGBT-modules
FF75R12YT3
初步数据
PreliminaryꢀData
接线图ꢀ/ꢀcircuit_diagram_headline
J
封装尺寸ꢀ/ꢀpackageꢀoutlines
preparedꢀby:ꢀAC
approvedꢀby:ꢀMB
dateꢀofꢀpublication:ꢀ2013-10-03
revision:ꢀ2.0
7
技术信息ꢀ/ꢀTechnicalꢀInformation
IGBT-模块
IGBT-modules
FF75R12YT3
初步数据
PreliminaryꢀData
使用条件和条款
ꢀ
使用条件和条款
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保留产品规格书的修改权
Termsꢀ&ꢀConditionsꢀofꢀusage
ꢀ
Theꢀdataꢀcontainedꢀinꢀthisꢀproductꢀdataꢀsheetꢀisꢀexclusivelyꢀintendedꢀforꢀtechnicallyꢀtrainedꢀstaff.ꢀYouꢀandꢀyourꢀtechnicalꢀdepartmentsꢀwill
haveꢀtoꢀevaluateꢀtheꢀsuitabilityꢀofꢀtheꢀproductꢀforꢀtheꢀintendedꢀapplicationꢀandꢀtheꢀcompletenessꢀofꢀtheꢀproductꢀdataꢀwithꢀrespectꢀtoꢀsuch
application.
Thisꢀproductꢀdataꢀsheetꢀisꢀdescribingꢀtheꢀcharacteristicsꢀofꢀthisꢀproductꢀforꢀwhichꢀaꢀwarrantyꢀisꢀgranted.ꢀAnyꢀsuchꢀwarrantyꢀisꢀgranted
exclusivelyꢀpursuantꢀtheꢀtermsꢀandꢀconditionsꢀofꢀtheꢀsupplyꢀagreement.ꢀThereꢀwillꢀbeꢀnoꢀguaranteeꢀofꢀanyꢀkindꢀforꢀtheꢀproductꢀandꢀits
characteristics.ꢀTheꢀinformationꢀinꢀtheꢀvalidꢀapplication-ꢀandꢀassemblyꢀnotesꢀofꢀtheꢀmoduleꢀmustꢀbeꢀconsidered.
Shouldꢀyouꢀrequireꢀproductꢀinformationꢀinꢀexcessꢀofꢀtheꢀdataꢀgivenꢀinꢀthisꢀproductꢀdataꢀsheetꢀorꢀwhichꢀconcernsꢀtheꢀspecificꢀapplicationꢀof
interestedꢀweꢀmayꢀprovideꢀapplicationꢀnotes.ꢀ
Dueꢀtoꢀtechnicalꢀrequirementsꢀourꢀproductꢀmayꢀcontainꢀdangerousꢀsubstances.ꢀForꢀinformationꢀonꢀtheꢀtypesꢀinꢀquestionꢀpleaseꢀcontactꢀthe
salesꢀoffice,ꢀwhichꢀisꢀresponsibleꢀforꢀyou.
ShouldꢀyouꢀintendꢀtoꢀuseꢀtheꢀProductꢀinꢀaviationꢀapplications,ꢀinꢀhealthꢀorꢀliveꢀendangeringꢀorꢀlifeꢀsupportꢀapplications,ꢀpleaseꢀnotify.ꢀPlease
note,ꢀthatꢀforꢀanyꢀsuchꢀapplicationsꢀweꢀurgentlyꢀrecommend
-ꢀtoꢀperformꢀjointꢀRiskꢀandꢀQualityꢀAssessments;
-ꢀtheꢀconclusionꢀofꢀQualityꢀAgreements;
-ꢀtoꢀestablishꢀjointꢀmeasuresꢀofꢀanꢀongoingꢀproductꢀsurvey,ꢀandꢀthatꢀweꢀmayꢀmakeꢀdeliveryꢀdependedꢀon
ꢀꢀtheꢀrealizationꢀofꢀanyꢀsuchꢀmeasures.
Ifꢀandꢀtoꢀtheꢀextentꢀnecessary,ꢀpleaseꢀforwardꢀequivalentꢀnoticesꢀtoꢀyourꢀcustomers.
Changesꢀofꢀthisꢀproductꢀdataꢀsheetꢀareꢀreserved.
preparedꢀby:ꢀAC
approvedꢀby:ꢀMB
dateꢀofꢀpublication:ꢀ2013-10-03
revision:ꢀ2.0
8
