Infineon-Technologies-FP10R06KL4

Technische Information / technical information  

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o

du

le  

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les  

FP10R06KL4  

IGBT-Wechselrichter / IGBT-inverter  

Hö

chst

zu

l

ä

ssi

g

e Werte /

max

i

mum

r

a

te

d

v

a

l

u

es  

Kollektor-Emitter-Sperrdivnung  

collector-emitter voltage  

TÝÎ = 25°C  

V†Š»  

600  

V

Kollektor-Dauergleichstrom  

DC-collector current  

T† = 80°C, TÝÎ = 150°C  

T† = 25°C, TÝÎ = 150°C  

I† ÒÓÑ  

I†  

10  

16  

A

A

Periodischer Kollektor Spitzenstrom  

repetitive peak collector current  

t« = 1 ms  

I†ç¢  

PÚÓÚ  

20  

A

W

V

Gesamt-Verlustleistung  

total power dissipation  

T† = 25°C, TÝÎ = 150°C  

69,5  

+/-20  

Gate-Emitter-Spitzendivnung  

gate-emitter peak voltage  

V•Š»  

C

h

a

r

ak

teristische Werte / ch

a

r

a

cteristic v

a

l

u

es  

min. typ. max.  

Kollektor-Emitter Sättigungsdivnung  

collector-emitter saturation voltage  

I† = 10 A, V•Š = 15 V  

I† = 10 A, V•Š = 15 V  

TÝÎ = 25°C  

TÝÎ = 125°C  

1,95 2,55  

2,20  

V

V

V†Š ÙÈÚ  

V•ŠÚÌ  

Q•  

Gate-Schwellendivnung  

gate threshold voltage  

I† = 0,35 mA, V†Š = V•Š, TÝÎ = 25°C  

V•Š = -15 V … +15 V  

4,5  

5,5  

0,06  

0,0  

6,5  

V

µC  

Â

Gateladung  

gate charge  

Interner Gatewiderstand  

internal gate resistor  

TÝÎ = 25°C  

R•ÍÒÚ  

CÍþÙ  

Eingangskapazität  

input capacitance  

f = 1 MHz, TÝÎ = 25°C, V†Š = 25 V, V•Š = 0 V  

f = 1 MHz, TÝÎ = 25°C, V†Š = 25 V, V•Š = 0 V  

V†Š = 600 V, V•Š = 0 V, TÝÎ = 25°C  

V†Š = 0 V, V•Š = 20 V, TÝÎ = 25°C  

0,44  

0,04  

nF  

nF  

Rückwirkungskapazität  

reverse transfer capacitance  

CØþÙ  

Kollektor-Emitter Reststrom  

collector-emitter cut-off current  

I†Š»  

I•Š»  

tÁ ÓÒ  

1,0 mA  

400 nA  

Gate-Emitter Reststrom  

gate-emitter leakage current  

Einschaltverzögerungszeit (ind. Last)  

turn-on delay time (inductive load)  

I† = 10 A, V†Š = 300 V  

V•Š = ±15 V  

R•ÓÒ = 82 Â  

TÝÎ = 25°C  

TÝÎ = 125°C  

0,03  

0,03  

µs  

µs  

Anstiegszeit (induktive Last)  

rise time (inductive load)  

I† = 10 A, V†Š = 300 V  

V•Š = ±15 V  

R•ÓÒ = 82 Â  

TÝÎ = 25°C  

TÝÎ = 125°C  

0,025  

0,03  

µs  

µs  

tØ  

tÁ ÓËË  

tË  

Abschaltverzögerungszeit (ind. Last)  

turn-off delay time (inductive load)  

I† = 10 A, V†Š = 300 V  

V•Š = ±15 V  

R•ÓËË = 82 Â  

TÝÎ = 25°C  

TÝÎ = 125°C  

0,23  

0,23  

µs  

µs  

Fallzeit (induktive Last)  

fall time (inductive load)  

I† = 10 A, V†Š = 300 V  

V•Š = ±15 V  

R•ÓËË = 82 Â  

TÝÎ = 25°C  

TÝÎ = 125°C  

0,02  

0,03  

µs  

µs  

Einschaltverlustenergie pro Puls  

turn-on energy loss per pulse  

I† = 10 A, V†Š = 300 V, L» = 80 nH  

V•Š = ±15 V  

R•ÓÒ = 82 Â  

TÝÎ = 25°C  

TÝÎ = 125°C  

mJ  

mJ  

EÓÒ  

EÓËË  

0,36  

0,44  

45  

Abschaltverlustenergie pro Puls  

turn-off energy loss per pulse  

I† = 10 A, V†Š = 300 V, L» = 80 nH  

V•Š = ±15 V  

R•ÓËË = 82 Â  

TÝÎ = 25°C  

TÝÎ = 125°C  

mJ  

mJ  

Kurzschlussverhalten  

SC data  

V•Š ù 15 V, V†† = 360 V  

I»†  

V†ŠÑÈà = V†Š» -LÙ†Š ·di/dt  

pro IGBT / per IGBT  

pro IGBT / per IGBT  

t« ù 10 µs, TÝÎ = 125°C  

A

Innerer Wärmewiderstand  

thermal resistance, junction to case  

RÚÌœ†  

RÚ̆™  

1,60 1,80

 

K/W  

0,60 K/W  

Übergangs-Wärmewiderstand  

thermal resistance, case to heatsink  

ð«ÈÙÚþ = 1 W/(m·K)  

/

ðÃØþÈÙþ = 1 W/(m·K)  

prepared by: Daniel Kreuzer  

approved by: Marc Buschkühle  

date of publication: 2007-12-14  

revision: 3.1  

1

Technische Information / technical information  

I

GB

T

-M

o

du

le  

I

GB

T

–

mo

du

les  

FP10R06KL4  

Dio

d

e-Wechselrichter /

d

io

d

e-inverter  

Hö

chst

zu

l

ä

ssi

g

e Werte /

max

i

mum

r

a

te

d

v

a

l

u

es  

Periodische Spitzensperrdivnung  

repetitive peak reverse voltage  

TÝÎ = 25°C  

Vçç¢  

IŒ  

600  

10  

V

A

Dauergleichstrom  

DC forward current  

Periodischer Spitzenstrom  

t« = 1 ms  

IŒç¢  

I²t  

20  

A

repetitive peak forward current  

Grenzlastintegral  

Vç = 0 V, t« = 10 ms, TÝÎ = 125°C  

I²t – value  

12,0  

A²s  

C

h

a

r

ak

teristische Werte / ch

a

r

a

cteristic v

a

l

u

es  

min. typ. max.  

Durchlassdivnung  

forward voltage  

IŒ = 10 A, V•Š = 0 V  

IŒ = 10 A, V•Š = 0 V  

TÝÎ = 25°C  

TÝÎ = 125°C  

1,85 2,25  

1,90  

V

V

VŒ  

Rückstromspitze  

peak reverse recovery current  

IŒ = 10 A, – diŒ/dt = 600 A/µs (TÝÎ=125°C)  

Vç = 300 V  

V•Š = -15 V  

TÝÎ = 25°C  

TÝÎ = 125°C  

11,0  

12,0  

A

A

Iç¢  

Sperrverzögerungsladung  

recovered charge  

IŒ = 10 A, – diŒ/dt = 600 A/µs (TÝÎ=125°C)  

Vç = 300 V  

V•Š = -15 V  

TÝÎ = 25°C  

TÝÎ = 125°C  

0,40  

0,80  

µC  

µC  

QØ  

Abschaltenergie pro Puls  

reverse recovery energy  

IŒ = 10 A, – diŒ/dt = 600 A/µs (TÝÎ=125°C)  

Vç = 300 V  

V•Š = -15 V  

TÝÎ = 25°C  

TÝÎ = 125°C  

0,05  

0,12  

mJ  

mJ  

EØþÊ  

Innerer Wärmewiderstand  

thermal resistance, junction to case  

pro Diode / per diode  

pro Diode / per diode  

RÚÌœ†  

RÚ̆™  

3,50 3,95

 

K/W  

Übergangs-Wärmewiderstand  

thermal resistance, case to heatsink  

1,10  

K/W  

ð«ÈÙÚþ = 1 W/(m·K)  

/

ðÃØþÈÙþ = 1 W/(m·K)  

Dio

d

e-Gleichrichter /

d

io

d

e-rectifier  

Hö

chst

zu

l

ä

ssi

g

e Werte /

max

i

mum

r

a

te

d

v

a

l

u

es  

Periodische Rückw. Spitzensperrdivnung  

repetitive peak reverse voltage  

TÝÎ = 25°C  

Vçç¢  

IŒç¢»¢  

I碻¢  

IŒ»¢  

800  

25  

V

A

A

Durchlassstrom Grenzeffektivwert pro Dio.  

T† = 80°C  

forward current RMS maximum per diode  

Gleichrichter Ausgang Grenzeffektivstrom  

T† = 80°C  

25  

maximum RMS current at Rectifier output  

Stoßstrom Grenzwert  

surge forward current  

tÔ = 10 ms, TÝÎ = 25°C  

tÔ = 10 ms, TÝÎ = 150°C  

305  

245  

A

A

Grenzlastintegral  

I²t – value  

tÔ = 10 ms, TÝÎ = 25°C  

tÔ = 10 ms, TÝÎ = 150°C  

465  

300  

A²s  

A²s  

I²t  

C

h

a

r

ak

teristische Werte / ch

a

r

a

cteristic v

a

l

u

es  

Durchlassdivnung  

TÝÎ = 150°C, IŒ = 10 A  

forward voltage  

min. typ. max.  

0,80  

VŒ  

Iç  

V

Sperrstrom  

TÝÎ = 150°C, Vç = 800 V  

reverse current  

0,10  

mA  

Innerer Wärmewiderstand  

thermal resistance, junction to case  

pro Diode  

per diode  

RÚÌœ†  

RÚ̆™  

1,45 1,60

 

K/W  

0,60 K/W  

Übergangs-Wärmewiderstand  

thermal resistance, case to heatsink  

pro Diode / per diode  

/

ð«ÈÙÚþ = 1 W/(m·K)  

ðÃØþÈÙþ = 1 W/(m·K)  

prepared by: Daniel Kreuzer  

approved by: Marc Buschkühle  

date of publication: 2007-12-14  

revision: 3.1  

2

Technische Information / technical information  

I

GB

T

-M

o

du

le  

I

GB

T

–

mo

du

les  

FP10R06KL4  

IGBT-Bre

m

s-

C

hopper / IGBT-br

ak

e-chopper  

Hö

chst

zu

l

ä

ssi

g

e Werte /

max

i

mum

r

a

te

d

v

a

l

u

es  

Kollektor-Emitter-Sperrdivnung  

collector-emitter voltage  

TÝÎ = 25°C  

V†Š»  

600  

V

Kollektor-Dauergleichstrom  

DC-collector current  

T† = 80°C, TÝÎ = 150°C  

T† = 25°C, TÝÎ = 150°C  

I†ÒÓÑ  

I†  

10  

15  

A

A

Periodischer Kollektor Spitzenstrom  

repetitive peak collector current  

t« = 1 ms  

I†ç¢  

PÚÓÚ  

20  

A

W

V

Gesamt-Verlustleistung  

total power dissipation  

T† = 25°C, TÝÎ = 150°C  

69,5  

+/-20  

Gate-Emitter-Spitzendivnung  

gate-emitter peak voltage  

V•Š»  

C

h

a

r

ak

teristische Werte / ch

a

r

a

cteristic v

a

l

u

es  

min. typ. max.  

Kollektor-Emitter Sättigungsdivnung  

collector-emitter saturation voltage  

I† = 10 A, V•Š = 15 V  

I† = 10 A, V•Š = 15 V  

TÝÎ = 25°C  

TÝÎ = 125°C  

1,95 2,55  

2,20  

V

V

V†Š ÙÈÚ  

V•ŠÚÌ  

Q•  

Gate-Schwellendivnung  

gate threshold voltage  

I† = 0,35 mA, V†Š = V•Š, TÝÎ = 25°C  

V•Š = -15 V … +15 V  

4,5  

5,5  

6,5  

V

µC  

Â

Gateladung  

gate charge  

0,06  

0,00  

0,44  

0,04  

Interner Gatewiderstand  

internal gate resistor  

TÝÎ = 25°C  

R•ÍÒÚ  

CÍþÙ  

Eingangskapazität  

input capacitance  

f = 1 MHz, TÝÎ = 25°C, V†Š = 25 V, V•Š = 0 V  

f = 1 MHz, TÝÎ = 25°C, V†Š = 25 V, V•Š = 0 V  

V†Š = 600 V, V•Š = 0 V, TÝÎ = 25°C  

V†Š = 0 V, V•Š = 20 V, TÝÎ = 25°C  

nF  

nF  

Rückwirkungskapazität  

reverse transfer capacitance  

CØþÙ  

Kollektor-Emitter Reststrom  

collector-emitter cut-off current  

I†Š»  

1,0 mA  

400 nA  

Gate-Emitter Reststrom  

gate-emitter leakage current  

I•Š»  

Einschaltverzögerungszeit (ind. Last)  

turn-on delay time (inductive load)  

I† = 10 A, V†Š = 300 V  

V•Š = ±15 V  

R•ÓÒ = 82 Â  

TÝÎ = 25°C  

TÝÎ = 125°C  

0,03  

0,03  

µs  

µs  

tÁ ÓÒ  

tØ  

Anstiegszeit (induktive Last)  

rise time (inductive load)  

I† = 10 A, V†Š = 300 V  

V•Š = ±15 V  

R•ÓÒ = 82 Â  

TÝÎ = 25°C  

TÝÎ = 125°C  

0,025  

0,03  

µs  

µs  

Abschaltverzögerungszeit (ind. Last)  

turn-off delay time (inductive load)  

I† = 10 A, V†Š = 300 V  

V•Š = ±15 V  

R•ÓËË = 82 Â  

TÝÎ = 25°C  

TÝÎ = 125°C  

0,23  

0,23  

µs  

µs  

tÁ ÓËË  

tË  

Fallzeit (induktive Last)  

fall time (inductive load)  

I† = 10 A, V†Š = 300 V  

V•Š = ±15 V  

R•ÓËË = 82 Â  

TÝÎ = 25°C  

TÝÎ = 125°C  

0,02  

0,03  

µs  

µs  

Einschaltverlustenergie pro Puls  

turn-on energy loss per pulse  

I† = 10 A, V†Š = 300 V  

V•Š = ±15 V  

R•ÓÒ = 82 Â  

TÝÎ = 25°C  

TÝÎ = 125°C  

mJ  

mJ  

EÓÒ  

EÓËË  

0,36  

0,44  

45  

Abschaltverlustenergie pro Puls  

turn-off energy loss per pulse  

I† = 10 A, V†Š = 300 V  

V•Š = ±15 V  

R•ÓËË = 82 Â  

TÝÎ = 25°C  

TÝÎ = 125°C  

mJ  

mJ  

Kurzschlussverhalten  

SC data  

V•Š ù 15 V, V†† = 360 V  

V†ŠÑÈà = V†Š» -LÙ†Š · di/dt  

I»†  

t« ù 10 µs, TÝÎ = 125°C  

A

Innerer Wärmewiderstand  

thermal resistance, junction to case  

pro IGBT  

per IGBT  

RÚÌœ†  

RÚ̆™  

1,60 1,80

 

K/W  

0,60 K/W  

Übergangs-Wärmewiderstand  

thermal resistance, case to heatsink  

pro IGBT / per IGBT  

ð«ÈÙÚþ = 1 W/(m·K)

 

/ ðÃØþÈÙþ

 

= 1 W/(m·K)  

prepared by: Daniel Kreuzer  

approved by: Marc Buschkühle  

date of publication: 2007-12-14  

revision: 3.1  

3

Technische Information / technical information  

I

GB

T

-M

o

du

le  

I

GB

T

–

mo

du

les  

FP10R06KL4  

Dio

d

e-Bre

m

s-

C

hopper / Dio

d

e-br

ak

e-chopper  

Hö

chst

zu

l

ä

ssi

g

e Werte /

max

i

mum

r

a

te

d

v

a

l

u

es  

Periodische Spitzensperrdivnung  

repetitive peak reverse voltage  

TÝÎ = 25°C  

Vçç¢  

IŒ  

600  

10  

V

A

Dauergleichstrom  

DC forward current  

Periodischer Spitzenstrom  

tÔ = 1 ms  

IŒç¢  

I²t  

20  

A

repetitive peak forw. current  

Grenzlastintegral  

Vç = 0 V, t« = 10 ms, TÝÎ = 125°C  

I²t – value  

12,0  

A²s  

C

h

a

r

ak

teristische Werte / ch

a

r

a

cteristic v

a

l

u

es  

min. typ. max.  

Durchlassdivnung  

forward voltage  

IŒ = 10 A, V•Š = 0 V  

IŒ = 10 A, V•Š = 0 V  

TÝÎ = 25°C  

TÝÎ = 125°C  

1,85 2,25  

1,90  

V

V

VŒ  

Rückstromspitze  

peak reverse recovery current  

IŒ = 10 A, – diŒ/dt = 600 A/µs (TÝÎ=125°C)  

Vç = 300 V  

V•Š = -15 V  

TÝÎ = 25°C  

TÝÎ = 125°C  

11,0  

12,0  

A

A

Iç¢  

Sperrverzögerungsladung  

recovered charge  

IŒ = 10 A, – diŒ/dt = 600 A/µs (TÝÎ=125°C)  

Vç = 300 V  

V•Š = -15 V  

TÝÎ = 25°C  

TÝÎ = 125°C  

0,40  

0,80  

µC  

µC  

QØ  

Abschaltenergie pro Puls  

reverse recovery energy  

IŒ = 10 A, – diŒ/dt = 600 A/µs (TÝÎ=125°C)  

Vç = 300 V  

V•Š = -15 V  

TÝÎ = 25°C  

TÝÎ = 125°C  

0,05  

0,12  

mJ  

mJ  

EØþÊ  

Innerer Wärmewiderstand  

thermal resistance, junction to case  

pro Diode  

per diode  

RÚÌœ†  

RÚ̆™  

3,50 3,95

 

K/W  

Übergangs-Wärmewiderstand  

thermal resistance, case to heatsink  

pro Diode / per diode  

ð«ÈÙÚþ = 1 W/(m·K) /ðÃØþÈÙþ = 1 W/(m·K)  

1,10  

K/W  

NT

C

-Wi

d

erst

a

n

d

/ NT

C

-ther

m

istor  

C

h

a

r

ak

teristische Werte / ch

a

r

a

cteristic v

a

l

u

es  

Nennwiderstand  

rated resistance  

min. typ. max.  

5,00  

T† = 25°C  

Rèë  

ÆR/R  

Pèë  

k  

%

Abweichung von Ræåå  

deviation of Ræåå  

T† = 100°C, Ræåå = 493 Â  

-5  

5

Verlustleistung  

power dissipation  

T† = 25°C  

20,0 mW  

B-Wert  

B-value  

Rè = Rèë exp [Bèëõëå(1/Tè – 1/(298,15 K))]  

Rè = Rèë exp [Bèëõîå(1/Tè – 1/(298,15 K))]  

Rè = Rèë exp [Bèëõæåå(1/Tè – 1/(298,15 K))]  

Bèëõëå  

Bèëõîå  

Bèëõæåå  

3375  

3411  

3433  

K

K

K

B-Wert  

B-value  

B-Wert  

B-value  

A

n

g

a

b

en

g

em

äß gü

lti

g

er

App

lication

N

ote

.  

Sp

ecification accor

d

in

g

to the

v

ali

d

a

pp

lication note

.  

prepared by: Daniel Kreuzer  

approved by: Marc Buschkühle  

date of publication: 2007-12-14  

revision: 3.1  

4

Technische Information / technical information  

I

GB

T

-M

o

du

le  

I

GB

T

–

mo

du

les  

FP10R06KL4  

Mo

du

l /

m

o

du

le  

Isolations-Prüfdivnung  

RMS, f = 50 Hz, t = 1 min.  

insulation test voltage  

Vš»¥¡  

2,5  

kV  

Material für innere Isolation  

material for internal insulation  

AlèOé  

Kriechstrecke  

creepage distance  

Kontakt – Kühlkörper / terminal to heatsink  

Kontakt – Kontakt / terminal to terminal  

13,5  

7,5  

mm  

mm  

Luftstrecke  

clearance distance  

Kontakt – Kühlkörper / terminal to heatsink  

Kontakt – Kontakt / terminal to terminal  

12,0  

7,5  

Vergleichszahl der Kriechwegbildung  

comparative tracking index  

CTI  

> 200  

min. typ. max.  

40  

Modulinduktivität  

stray inductance module  

LÙ†Š  

nH  

Modulleitungswiderstand,  

Anschlüsse – Chip  

module lead resistance,  

terminals – chip  

R††óôŠŠó  

Rƒƒóô††ó  

10,0  

11,0  

T† = 25°C, pro Schalter / per switch  

m  

Höchstzulässige Sperrschichttemperatur  

maximum junction temperature  

Wechselrichter, Brems-Chopper / Inverter, Brake-Chopper

 

TÝÎ ÑÈà  

150  

°C  

°C  

°C  

N

Temperatur im Schaltbetrieb  

temperature under switching conditions  

Wechselrichter, Brems-Chopper / Inverter, Brake-Chopper

 

TÝÎ ÓÔ  

-40  

-40  

40  

125  

125  

80  

Lagertemperatur  

storage temperature  

TÙÚÃ  

F

Anpresskraft für mech. Bef. pro Feder  

mountig force per clamp  

–

Gewicht  

weight  

G

36  

g

prepared by: Daniel Kreuzer  

approved by: Marc Buschkühle  

date of publication: 2007-12-14  

revision: 3.1  

5

Technische Information / technical information  

I

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FP10R06KL4  

Ausgangskennlinie IGBT-Wechselr. (typisch)  

output characteristic IGBT-inverter (typical)  

I† = f (V†Š)  

Ausgangskennlinienfeld IGBT-Wechselr. (typisch)  

output characteristic IGBT-inverter (typical)  

I† = f (V†Š)  

TÝÎ = 125°C  

V•Š = 15 V  

2

0  

2

0  

TÝÎ = 25°C  

TÝÎ = 125°C  

V•Š = 20 V  

V•Š = 15 V  

V•Š = 12 V  

V•Š = 10 V  

V•Š =

 

9 V  

18  

18  

1

6  

1

4  

12  

1

0  

8

1

6  

V•Š =

 

8 V  

1

4  

12  

1

0  

8

6

6

4

4

2

2

0

0

0

,

0  

0

,5  

1,

0  

1,5 2,

0  

V†Š [V]  

2,5  

3,

0  

3,5  

0

,

0 0

,5 1,

0

1,5 2,

0

2,5 3,

0

3,5

4

,

0 4

,5 5,

0  

V†Š [V]  

Übertragungscharakteristik IGBT-Wechselr. (typisch)  

transfer characteristic IGBT-inverter (typical)  

I† = f (V•Š)  

Schaltverluste IGBT-Wechselr. (typisch)  

switching losses IGBT-inverter (typical)  

EÓÒ = f (I†), EÓËË = f (I†)  

V†Š = 20 V  

V•Š = ±15 V, R•ÓÒ = 82 Â, R•ÓËË = 82 Â, V†Š = 300 V  

2

0  

1,2  

TÝÎ = 25°C  

TÝÎ = 125°C  

EÓÒ, TÝÎ = 125°C  

EÓËË, TÝÎ = 125°C  

18  

1,

0  

0

,8  

0

,

6  

0

,

4  

0

,2  

0

,

0  

1

6  

1

4  

12  

1

0  

8

6

4

2

0

5

6

7

8 9  

V•Š [V]  

1

0  

11  

12  

0

2

4

6

8

1

0

12 1

4

1

6

18 2

0  

I† [A]  

prepared by: Daniel Kreuzer  

approved by: Marc Buschkühle  

date of publication: 2007-12-14  

revision: 3.1  

6

Technische Information / technical information  

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FP10R06KL4  

Schaltverluste IGBT-Wechselr. (typisch)  

switching losses IGBT-Inverter (typical)  

EÓÒ = f (R•), EÓËË = f (R•)  

Transienter Wärmewiderstand IGBT-Wechselr.  

transient thermal impedance IGBT-inverter  

ZÚÌœ™ = f (t)  

V•Š = ±15 V, I† = 10 A, V†Š = 300 V  

1,

0  

1

0  

EÓÒ, TÝÎ = 125°C  

EÓËË, TÝÎ = 125°C  

ZÚÌœ™ : IGBT  

0

,9  

0

,8  

0

,7  

0

,

6  

0

,5  

0

,

4  

0

,3  

0

,2  

0

,1  

0

,

0  

1

i:  

rÍ[K/W]: 0,158

 

0,306 0,945 0,791  

0,0005 0,005 0,05

 

0,2  

1

2

3

4

τ

Í[s]:  

0

,1  

0

,

00

1  

8

0  

1

00  

12

0  

1

40  

R• [Â]  

1

60  

18

0  

2

00  

0

,

0

1  

0

,1  

t [s]  

1

1

0  

Sicherer Rückwärts-Arbeitsbereich IGBT-Wr. (RBSOA)  

reverse bias safe operating area IGBT-inv. (RBSOA)  

I† = f (V†Š)  

Durchlasskennlinie der Diode-Wechselr. (typisch)  

forward characteristic of diode-inverter (typical)  

IŒ = f (VŒ)  

V•Š = ±15 V, R•ÓËË = 82 Â, TÝÎ = 125°C  

2

4  

2

0  

I†, Modul  

I†, Chip  

TÝÎ = 25°C  

TÝÎ = 125°C  

18  

2

0  

1

6  

12  

8

1

6  

1

4  

12  

1

0  

8

6

4

4

2

0

0

0

1

00  

2

00  

3

00 400  

V†Š [V]  

5

00  

600  

7

00  

0

,

0  

0

,5  

1,

0  

1,5  

VŒ [V]  

2,

0  

2,5  

3,

0  

prepared by: Daniel Kreuzer  

approved by: Marc Buschkühle  

date of publication: 2007-12-14  

revision: 3.1  

7

Technische Information / technical information  

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FP10R06KL4  

Schaltverluste Diode-Wechselr. (typisch)  

switching losses diode-inverter (typical)  

EØþÊ = f (IŒ)  

Schaltverluste Diode-Wechselr. (typisch)  

switching losses diode-inverter (typical)  

EØþÊ = f (R•)  

IŒ = 10 A, V†Š = 300 V  

R•ÓÒ = 82 Â, V†Š = 300 V  

0

,2

0  

0

,2

0  

EØþÊ, TÝÎ = 125°C  

EØþÊ, TÝÎ = 125°C  

0

,18  

0

,18  

0

,1

6  

0

,1

4  

0

,12  

0

,1

0  

0

,

0

8  

0

,

06  

0

,

04  

0

,

0

2  

0

,

00  

0

,1

6  

0

,1

4  

0

,12  

0

,1

0  

0

,

0

8  

0

,

06  

0

,

04  

0

,

0

2  

0

,

00  

0

2

4

6

8

1

0

12 1

4

1

6

18 2

0  

IŒ [A]  

8

0  

1

00  

12

0  

1

40  

R• [Â]  

1

60  

18

0  

2

00  

Transienter Wärmewiderstand Diode-Wechselr.  

transient thermal impedance diode-inverter  

ZÚÌœ™ = f (t)  

Durchlasskennlinie der Diode-Gleichrichter (typisch)  

forward characteristic of diode-rectifier (typical)  

IŒ = f (VŒ)  

1

0  

2

0  

ZÚÌœ™ : Diode  

TÝÎ = 25°C  

TÝÎ = 150°C  

18  

1

6  

1

4  

12  

1

0  

8

1

6

4

i:  

1

2

3

rÍ[K/W]: 0,414

 

0,938 1,587 1,661  

4

τ

Í[s]:  

2

0,0005 0,005 0,05

 

0,2  

0

,1  

0

,

00

1  

0

0

,

0

1  

0

,1  

t [s]  

1

1

0  

0

,

0  

0

,2  

0

,

4  

0

,

6  

VŒ [V]  

0

,8  

1,

0  

1,2  

prepared by: Daniel Kreuzer  

approved by: Marc Buschkühle  

date of publication: 2007-12-14  

revision: 3.1  

8

Technische Information / technical information  

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FP10R06KL4  

Ausgangskennlinie IGBT-Brems-Copper (typisch)  

output characteristic IGBT-brake-chopper (typical)  

I† = f (V†Š)  

Durchlasskennlinie der Diode-Brems-Chopper (typisch)  

forward characteristic of diode-brake-chopper (typical)  

IŒ = f (VŒ)  

V•Š = 15 V  

2

0  

2

0  

TÝÎ = 25°C  

TÝÎ = 125°C  

TÝÎ = 25°C  

TÝÎ = 125°C  

18  

18  

1

6  

1

4  

12  

1

0  

8

1

6  

1

4  

12  

1

0  

8

6

6

4

4

2

2

0

0

0

,

0  

0

,5  

1,

0  

1,5 2,

0  

V†Š [V]  

2,5  

3,

0  

3,5  

0

,

0  

0

,5  

1,

0  

1,5  

VŒ [V]  

2,

0  

2,5  

3,

0  

NTC-Temperaturkennlinie (typisch)  

NTC-temperature characteristic (typical)  

R = f (T)  

1

00000  

RÚáÔ  

1

0000  

1

000  

1

00  

0

2

0  

40  

60  

8

0  

T† [°C]  

1

00

12

0

1

40

1

60  

prepared by: Daniel Kreuzer  

approved by: Marc Buschkühle  

date of publication: 2007-12-14  

revision: 3.1  

9

Technische Information / technical information  

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I

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FP10R06KL4  

Sch

a

ltpl

a

n / circ

u

it

d

i

ag

r

am  

ϑ

Geh

äu

se

a

b

m

ess

u

n

g

en / p

a

c

kag

e o

u

tlines  

prepared by: Daniel Kreuzer  

approved by: Marc Buschkühle  

date of publication: 2007-12-14  

revision: 3.1  

1

0  

Technische Information / technical information  

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I

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du

les  

FP10R06KL4  

N

u

t

zu

n

g

sbe

d

in

gu

n

g

en  

Die in

d

iese

m P

ro

duk

t

da

tenbl

a

tt enth

a

ltenen D

a

ten sin

d au

sschlie

ß

lich f

ü

r technisch

g

esch

u

ltes

Fa

chperson

a

l besti

mm

t

.

Die  

Be

u

rteil

u

n

g d

er

E

i

g

n

u

n

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P

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duk

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so

w

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d

ie Be

u

rteil

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V

ollst

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estellten  

P

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duk

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A

n

w

en

du

n

g

oblie

g

t Ihnen b

zw.

Ihren technischen

A

bteil

u

n

g

en

.  

In

d

iese

m P

ro

duk

t

da

tenbl

a

tt

w

er

d

en

d

ie

j

eni

g

en Mer

kma

le beschrieben

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f

ü

r

d

ie

w

ir eine liefervertr

ag

liche Ge

wä

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berneh

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wä

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u

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richtet sich

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w

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da

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P

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u

n

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E

i

g

ensch

a

ften

k

einesf

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lls

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berno

mm

en

.  

Sollten Sie von

u

ns

P

ro

duk

tinfor

ma

tionen ben

ö

ti

g

en

, d

ie

ü

ber

d

en Inh

a

lt

d

ieses

P

ro

duk

t

da

tenbl

a

tts hin

au

s

g

ehen

u

n

d  

insbeson

d

ere eine spe

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ifische

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er

w

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du

n

g u

n

d d

en

E

ins

a

t

z d

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P

ro

duk

tes betreffen

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set

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en Sie sich bitte

m

it

d

e

m

f

ü

r Sie  

zu

st

ä

n

d

i

g

en

V

ertriebsb

ü

ro in

V

erbin

du

n

g (

siehe

www.

infineon

.

co

m, V

ertrieb

&K

ont

ak

t

). Fü

r Interessenten h

a

lten

w

ir

A

pplic

a

tion  

Notes bereit

.  

Au

f

g

r

u

n

d d

er technischen

A

nfor

d

er

u

n

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en

kö

nnte

u

nser

P

ro

duk

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u

n

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ef

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hr

d

en

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e S

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bst

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en enth

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Bei

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k

fr

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zu d

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m P

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duk

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j

e

w

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u

bst

a

n

z

en set

z

en Sie sich bitte ebenf

a

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m

it

d

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m

f

ü

r Sie

zu

st

ä

n

d

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g

en

V

ertriebsb

ü

ro  

in

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du

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g.  

Sollten Sie be

a

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g

en

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s

P

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A

n

w

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Lu

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n

w

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du

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sbereichen ein

zu

set

z

en

,

bitten

w

ir

um

Mitteil

u

n

g.

Wir

w

eisen

da

r

au

f hin

, da

ss

w

ir f

ü

r

d

iese

Fä

lle  

–

d

ie

g

e

m

eins

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e D

u

rchf

ü

hr

u

n

g

eines

R

isi

k

o-

u

n

d Qua

lit

ä

ts

a

ssess

m

ents

;  

–

d

en

A

bschl

u

ss von

 

spe

z

iellen

Qua

lit

ä

tssicher

u

n

g

svereinb

a

r

u

n

g

en

;  

–

d

ie

g

e

m

eins

am

e

E

inf

ü

hr

u

n

g

von M

aß

n

a

h

m

en

zu

einer l

au

fen

d

en

P

ro

duk

tbeob

a

cht

u

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g d

rin

g

en

d

e

m

pfehlen

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e

g

ebenenf

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lls

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u

n

g

von

d

er

Um

set

zu

n

g

solcher M

aß

n

a

h

m

en

a

bh

ä

n

g

i

g ma

chen

.  

So

w

eit erfor

d

erlich

,

bitten

w

ir Sie

,

entsprechen

d

e

H

in

w

eise

a

n Ihre

Ku

n

d

en

zu g

eben

.  

Inh

a

ltliche

Ä

n

d

er

u

n

g

en

d

ieses

P

ro

duk

t

da

tenbl

a

tts bleiben vorbeh

a

lten

.  

Ter

m

s

& C

on

d

itions of

u

s

ag

e  

The

da

t

a

cont

a

ine

d

in this pro

du

ct

da

t

a

sheet is e

x

cl

u

sivel

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inten

d

e

d

for technic

a

ll

y

tr

a

ine

d

st

a

ff

. Y

o

u a

n

d y

o

u

r technic

a

l  

d

ep

a

rt

m

ents

w

ill h

a

ve to ev

a

l

ua

te the s

u

it

a

bilit

y

of the pro

du

ct for the inten

d

e

d a

pplic

a

tion

a

n

d

the co

m

pleteness of the pro

du

ct  

da

t

a w

ith respect to s

u

ch

a

pplic

a

tion

.  

This pro

du

ct

da

t

a

sheet is

d

escribin

g

the ch

a

r

a

cteristics of this pro

du

ct for

w

hich

a wa

rr

a

nt

y

is

g

r

a

nte

d. A

n

y

s

u

ch

wa

rr

a

nt

y

is  

g

r

a

nte

d

e

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cl

u

sivel

y

p

u

rs

ua

nt the ter

m

s

a

n

d

con

d

itions of the s

u

ppl

y ag

ree

m

ent

.

There

w

ill be no

gua

r

a

ntee of

a

n

y k

in

d

for the  

pro

du

ct

a

n

d

its ch

a

r

a

cteristics

.  

Sho

u

l

d y

o

u

re

qu

ire pro

du

ct infor

ma

tion in e

x

cess of the

da

t

a g

iven in this pro

du

ct

da

t

a

sheet or

w

hich concerns the specific  

a

pplic

a

tion of o

u

r pro

du

ct

,

ple

a

se cont

a

ct the s

a

les office

, w

hich is responsible for

y

o

u (

see

www.

infineon

.

co

m,

s

a

les

&

cont

a

ct

).  

F

or those th

a

t

a

re specific

a

ll

y

intereste

d w

e

may

provi

d

e

a

pplic

a

tion notes

.  

D

u

e to technic

a

l re

qu

ire

m

ents o

u

r pro

du

ct

may

cont

a

in

da

n

g

ero

u

s s

u

bst

a

nces

. F

or infor

ma

tion on the t

y

pes in

qu

estion ple

a

se  

cont

a

ct the s

a

les office

, w

hich is responsible for

y

o

u.  

Sho

u

l

d y

o

u

inten

d

to

u

se the

P

ro

du

ct in

a

vi

a

tion

a

pplic

a

tions

,

in he

a

lth or live en

da

n

g

erin

g

or life s

u

pport

a

pplic

a

tions

,

ple

a

se  

notif

y. P

le

a

se note

,

th

a

t for

a

n

y

s

u

ch

a

pplic

a

tions

w

e

u

r

g

entl

y

reco

mm

en

d  

– to perfor

m j

oint

R

is

k a

n

d Qua

lit

y A

ssess

m

ents

;  

– the concl

u

sion of

Qua

lit

y Ag

ree

m

ents

;  

– to est

a

blish

j

oint

m

e

a

s

u

res of

a

n on

g

oin

g

pro

du

ct s

u

rve

y,  

a

n

d

th

a

t

w

e

may mak

e

d

eliver

y d

epen

d

e

d

on the re

a

li

za

tion  

of

a

n

y

s

u

ch

m

e

a

s

u

res

.  

If

a

n

d

to the e

x

tent necess

a

r

y,

ple

a

se for

wa

r

d

e

qu

iv

a

lent notices to

y

o

u

r c

u

sto

m

ers

.  

C

h

a

n

g

es of this pro

du

ct

da

t

a

sheet

a

re reserve

d.  

prepared by: Daniel Kreuzer  

approved by: Marc Buschkühle  

date of publication: 2007-12-14  

revision: 3.1  

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