Infineon-Technologies-FS900R08A2P2-B32

Part #Infineon-Technologies-FS900R08A2P2-B32
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Infineon-Technologies-FS900R08A2P2-B32
HybridPACK™ꢀ2ꢀModule  
FS900R08A2P2_B32  
FinalꢀDataꢀSheet  
V3.0,ꢀ2017-06-14  
AutomotiveꢀHighꢀPower  

FS900R08A2P2_B32  
HybridPACKªꢀ2ꢀModule  
1ꢀꢀꢀꢀꢀFeaturesꢀ/ꢀDescription  
T
T
T
V

CES

= 750V  
I

C nom
 

= 900A  
TypicalꢀApplications  
• AutomotiveꢀApplications  
• HybridꢀElectricalꢀVehiclesꢀ(H)EV  
• CommercialꢀAgricultureꢀVehicles  
• MotorꢀDrives  
•
Optimized for automotive applications with DC link  
voltagesꢀupꢀtoꢀ450ꢀV  
ElectricalꢀFeatures  
• V

CEsat

ꢀꢀwithꢀpositiveꢀTemperatureꢀCoefficient  
• LowꢀV

CEsat  

• LowꢀSwitchingꢀLosses  
• LowꢀQgꢀandꢀCres  
• LowꢀInductiveꢀDesign  
• T

vjꢀop

ꢀ=ꢀ150°C  
•
Short-time extended Operation Temperature  
T

vjꢀop

ꢀ=ꢀ175°C  
MechanicalꢀFeatures  
• 2.5kVꢀACꢀ1minꢀInsulation  
• DirectꢀCooledꢀBaseꢀPlate  
• HighꢀPowerꢀDensity  
• IntegratedꢀNTCꢀtemperatureꢀsensor  
• CopperꢀBaseꢀPlate  
• IsolatedꢀBaseꢀPlate  
• RoHSꢀcompliant  
ProductꢀName  
OrderingꢀCode  
FS900R08A2P2_B32  
–
Final Data Sheet  
2
V3.0,ꢀꢀ2017-06-14  

FS900R08A2P2_B32  
HybridPACKªꢀ2ꢀModule  
2ꢀꢀꢀꢀꢀIGBT,Inverter  
2.1ꢀꢀꢀꢀMaximumꢀRatedꢀValues  
Parameter  
Conditions  
Symbol  
V

CES  

I

CN  

Value  
750  
Unit  
V
Collector-emitterꢀvoltage  
T

vj

= 25°C  
Implementedꢀcollectorꢀcurrent  
ContinuousꢀDCꢀcollectorꢀcurrent  
Repetitiveꢀpeakꢀcollectorꢀcurrent  
Totalꢀpowerꢀdissipation  
900  
A
T

F

= 105°C, T

vj max
 

= 175°C  
t

P

= 1 ms  
I

C nom  

I

CRM  

550  
A
1800  
1546  
+/-20  
A
T

F

= 25°C, T

vj max
 

= 175°C  
P

tot  

W
V
Gate-emitterꢀpeakꢀvoltage  
V

GES  

2.2ꢀꢀꢀꢀCharacteristicꢀValues  
min. typ. max.  
Collector-emitterꢀsaturationꢀvoltage  
I

C

= 550 A, V

GE

= 15 V  
I

C

= 550 A, V

GE

= 15 V  
I

C

= 550 A, V

GE

= 15 V  
T

vj

= 25°C  
T

vj

= 125°C  
T

vj

= 150°C  
1.10 1.25  
1.10  
1.10  
V

CE sat  

V
Gateꢀthresholdꢀvoltage  
Gateꢀcharge  
I

C

= 13.0 mA, V

CE

= V

GE  

T

vj

= 25°C  
V

GEth  

Q

G  

4.90 5.80 6.50  
V
µC  
Ω
V

GE

= -8 V … 15 V, V

CE

= 400V  
5.80  
0.5  
Internalꢀgateꢀresistor  
T

vj

= 25°C  
T

vj

= 25°C  
T

vj

= 25°C  
T

vj

= 25°C  
T

vj

= 25°C  
R

Gint  

C

ies  

C

res  

I

CES  

I

GES  

Inputꢀcapacitance  
f = 1 MHz, V

CE

= 25 V, V

GE

= 0 V  
f = 1 MHz, V

CE

= 25 V, V

GE

= 0 V  
V

CE

= 450 V, V

GE

= 0 V  
105  
0.50  
0.5  
nF  
nF  
mA  
nA  
Reverseꢀtransferꢀcapacitance  
Collector-emitterꢀcut-offꢀcurrent  
Gate-emitterꢀleakageꢀcurrent  
Turn-onꢀdelayꢀtime,ꢀinductiveꢀload  
V

CE

= 0 V, V

GE

= 20 V  
400  
I

C

= 550 A, V

CE

= 400 V  
V

GE

= -8 V / +15 V  
R

Gon

= 3.3
Ω  
T

vj

= 25°C  
T

vj

= 125°C  
T

vj

= 150°C  
0.39  
0.39  
0.39  
t

d on  

µs  
µs  
µs  
µs  
Riseꢀtime,ꢀinductiveꢀload  
I

C

= 550 A, V

CE

= 400 V  
V

GE

= -8 V / +15 V  
R

Gon

= 3.3
Ω  
T

vj

= 25°C  
T

vj

= 125°C  
T

vj

= 150°C  
0.09  
0.11  
0.11  
t

r  

Turn-offꢀdelayꢀtime,ꢀinductiveꢀload  
Fallꢀtime,ꢀinductiveꢀload  
I

C

= 550 A, V

CE

= 400 V  
V

GE

= -8 V / +15 V  
R

Goff

= 2.0
Ω  
T

vj

= 25°C  
T

vj

= 125°C  
T

vj

= 150°C  
0.63  
0.71  
0.74  
t

d off  

I

C

= 550 A, V

CE

= 400 V  
V

GE

= -8 V / +15 V  
R

Goff

= 2.0
Ω  
T

vj

= 25°C  
T

vj

= 125°C  
T

vj

= 150°C  
0.06  
0.08  
0.08  
t

f  

Turn-onꢀenergyꢀlossꢀperꢀpulse  
I

C

= 550 A, V

CE

= 400 V, L

S

= 20 nH  
V

GE

= -8 V / +15 V  
R

Gon

= 3.3
Ω  
T

vj

= 25°C  
T

vj

= 125°C  
T

vj

= 150°C  
21.0  
29.0  
30.5  
E

on  

mJ  
di/dt (T

vj

= 150°C) = 4100 A/µs  
Turn-offꢀenergyꢀlossꢀperꢀpulse  
I

C

= 550 A, V

CE

= 400 V, L

S

= 20 nH  
V

GE

= -8 V / +15 V  
R

Goff

= 2.0
Ω  
T

vj

= 25°C  
T

vj

= 125°C  
T

vj

= 150°C  
27.5  
36.0  
38.5  
E

off  

mJ  
A
dv/dt (T

vj

= 150°C) = 2600 V/µs  
SCꢀdata  
V

GE

≤
15 V, V

CC

= 400 V  
V

CEmax

= V

CES

-L

sCE

·di/dt  
I

SC  

t

P

≤
4 µs,
 
T

vj

= 150°C  
4500  
Thermalꢀresistance,ꢀjunctionꢀtoꢀcoolingꢀfluid perꢀIGBT;ꢀ
∆
V/
∆
tꢀ=ꢀ10ꢀdm³/min  
Temperatureꢀunderꢀswitchingꢀconditions
t

op

continuous  
R

thJF  

T

vj op  

0.097 K/W  
-40  
150  
150  
°C  
t

op max
 

30h over life time, for 10s within period of 10min  
175  
Final Data Sheet  
3
V3.0,ꢀꢀ2017-06-14  

FS900R08A2P2_B32  
HybridPACKªꢀ2ꢀModule  
3ꢀꢀꢀꢀꢀDiode,ꢀInverter  
3.1ꢀꢀꢀꢀMaximumꢀRatedꢀValues  
Parameter  
Conditions  
Symbol  
V

RRM  

I

FN  

Value  
750  
Unit  
V
Repetitiveꢀpeakꢀreverseꢀvoltage  
Implementedꢀforwardꢀcurrent  
ContinuousꢀDCꢀforwardꢀcurrent  
Repetitiveꢀpeakꢀforwardꢀcurrent  
I²tꢀ-ꢀvalue  
T

vj

= 25°C  
860  
A
I

F  

550  
A
t

P

= 1 ms  
I

FRM  

1720  
A
V

R

= 0 V, t

P

= 10 ms, T

vj

= 125°C  
V

R

= 0 V, t

P

= 10 ms, T

vj

= 150°C  
19500  
19000  
A²s  
A²s  
I²t  
3.2ꢀꢀꢀꢀCharacteristicꢀValues  
min. typ. max.  
Forwardꢀvoltage  
I

F

= 550 A, V

GE

= 0 V  
I

F

= 550 A, V

GE

= 0 V  
I

F

= 550 A, V

GE

= 0 V  
T

vj

= 25°C  
T

vj

= 125°C  
T

vj

= 150°C  
1.40 1.65  
1.30  
1.25  
V

F  

I

RM  

Q

r  

V
A
Peakꢀreverseꢀrecoveryꢀcurrent  
Recoveredꢀcharge  
I

F

= 550 A, – di

F

/dt = 4100 A/µs (T

vj

= 150°C)
 
T

vj

= 25°C  
V

R

= 400 V  
V

GE

= -8 V  
265  
385  
420  
T

vj

= 125°C  
T

vj

= 150°C  
I

F

= 550 A, – di

F

/dt = 4100 A/µs (T

vj

= 150°C)
 
T

vj

= 25°C  
V

R

= 400 V  
V

GE

= -8 V  
23.0  
49.5  
58.5  
T

vj

= 125°C  
T

vj

= 150°C  
µC  
mJ  
Reverseꢀrecoveryꢀenergy  
I

F

= 550 A, – di

F

/dt = 4100 A/µs (T

vj

= 150°C)
 
T

vj

= 25°C  
7.20  
15.0  
17.5  
V

R

= 400 V  
V

GE

= -8 V  
T

vj

= 125°C  
T

vj

= 150°C  
E

rec  

Thermalꢀresistance,ꢀjunctionꢀtoꢀcoolingꢀfluid perꢀdiode;ꢀ
∆
V/
∆
tꢀ=ꢀ10ꢀdm³/min  
R

thJF  

T

vj op  

0.125 K/W  
Temperatureꢀunderꢀswitchingꢀconditions  
t

op

continuous  
-40  
150  
150  
°C  
t

op max
 

30h over life time, for 10s within period of 10min  
175  
4ꢀꢀꢀꢀꢀNTC-Thermistor  
Parameter  
min. typ. max.  
Conditions  
Symbol  
R

25  

Value  
Unit  
k
Ω  
%
Ratedꢀresistance  
DeviationꢀofꢀR100  
Powerꢀdissipation  
B-value  
T

C

= 25°C  
5.00  
T

C

= 100°C, R

100

= 493
Ω  
T

C

= 25°C  
∆
R/R  
P

25  

5
5
20.0 mW  
R

2

= R

25

exp [B

25/50

(1/T

2

– 1/(298,15 K))]  
R

2

= R

25

exp [B

25/80

(1/T

2

– 1/(298,15 K))]  
R

2

= R

25

exp [B

25/100

(1/T

2

– 1/(298,15 K))]  
B

25/50  

B

25/80  

B

25/100  

3375  
3411  
3433  
K
K
K
B-value  
B-value  
Specificationꢀaccordingꢀtoꢀtheꢀvalidꢀapplicationꢀnote.  
Final Data Sheet  
4
V3.0,ꢀꢀ2017-06-14  

FS900R08A2P2_B32  
HybridPACKªꢀ2ꢀModule  
5ꢀꢀꢀꢀꢀModule  
Parameter  
Conditions  
Symbol  
Value  
2.5  
Unit  
Isolationꢀtestꢀvoltage  
Materialꢀofꢀmoduleꢀbaseplate  
Internalꢀisolation  
RMS, f = 50 Hz, t = 1 min.  
V

ISOL  

ꢀ
ꢀ
ꢀ
ꢀ
kV  
Cu  
ꢀ
ꢀ
basicꢀinsulationꢀ(classꢀ1,ꢀIECꢀ61140)  
Al

2

O

3  

Creepageꢀdistance  
terminalꢀtoꢀheatsink  
terminalꢀtoꢀterminal  
7.0  
5.5  
d

Creep  

ꢀ
ꢀ
mm  
Clearance  
terminalꢀtoꢀheatsink  
terminalꢀtoꢀterminal  
7.0  
5.0  
d

Clear  

CTI  
ꢀ
ꢀ
ꢀ
mm  
Comperativeꢀtrackingꢀindex  
> 200  
ꢀ
min. typ. max.  
Pressureꢀdropꢀinꢀcoolingꢀcircuit  
Maximumꢀpressureꢀinꢀcoolingꢀcircuit  
Strayꢀinductanceꢀmodule  
∆
V/
∆
t = 10.0 dm³/min; T

F

= 25°C  
∆
p  
p
119  
2.5  
mbar  
bar  
nH  
L

sCE  

R

CC’+EE’  

T

stg  

M
14  
Moduleꢀleadꢀresistance,ꢀterminalsꢀ-ꢀchip  
Storageꢀtemperature  
T

F

ꢀ=ꢀ25ꢀ°C,ꢀperꢀswitch  
0.80  
m
Ω  
°C  
-40  
3.00  
2.5  
125  
Mountingꢀtorqueꢀforꢀmodulꢀmounting  
Terminalꢀconnectionꢀtorque  
Weight  
ScrewꢀM6ꢀbaseplateꢀtoꢀheatsink  
ScrewꢀM6  
6.00 Nm  
M
–
5.0  
Nm  
g
G
1340  
* Kühleraufbau gemäß gültiger Application Note.  
* Cooler setup according to the valid application note.  
Final Data Sheet  
5
V3.0,ꢀꢀ2017-06-14  

FS900R08A2P2_B32  
HybridPACKªꢀ2ꢀModule  
6ꢀꢀꢀꢀꢀCharacteristicsꢀDiagrams  
outputꢀcharacteristicꢀIGBT,Inverterꢀ(typical)  
outputꢀcharacteristicꢀIGBT,Inverterꢀ(typical)  
I

C

ꢀ=ꢀfꢀ(V

CE  

I

C

ꢀ=ꢀfꢀ(V

CE  

)
)
V

GE

ꢀ=ꢀ15ꢀV  
1800  
1700  
1600  
1500  
1400  
1300  
1200  
1100  
1000  
900  
T

vj

ꢀ=ꢀ150°C  
1800  
1700  
1600  
1500  
1400  
1300  
1200  
1100  
1000  
900  
T

vj

= 25°C  
T

vj

= 125°C  
T

vj

= 150°C  
V

GE

= 19V  
V

GE

= 17V  
V

GE

= 15V  
V

GE

= 13V  
V

GE

= 11V  
V

GE

= 9V  
800  
800  
700  
700  
600  
600  
500  
500  
400  
400  
300  
300  
200  
200  
100  
100  
0
0
0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4 1,6 1,8 2,0  
0,0  
0,5  
1,0  
1,5  
2,0  
V

CE

[V]  
2,5  
3,0  
3,5  
4,0  
V

CE

[V]  
transferꢀcharacteristicꢀIGBT,Inverterꢀ(typical)  
switchingꢀlossesꢀIGBT,Inverterꢀ(typical)  
I

C

ꢀ=ꢀfꢀ(V

GE  

)
E

on

ꢀ=ꢀfꢀ(I

C

),ꢀE

off

ꢀ=ꢀfꢀ(I

C

)  
V

CE

ꢀ=ꢀ20ꢀV  
1800  
1700  
1600  
1500  
1400  
1300  
1200  
1100  
1000  
900  
V

GE

ꢀ=ꢀ±15ꢀV,ꢀR

Gon

ꢀ=ꢀ3.3ꢀ
Ω
,ꢀR

Goff

ꢀ=ꢀ2ꢀ
Ω
,ꢀV

CE

ꢀ=ꢀ400ꢀV  
70  
T

vj

= 25°C  
T

vj

= 125°C  
T

vj

= 150°C  
E

on

, T

vj

= 125°C  
E

off

, T

vj

= 125°C  
E

on

, T

vj

= 150°C  
60  
E

off

, T

vj

= 150°C  
50  
40  
30  
20  
10  
0
800  
700  
600  
500  
400  
300  
200  
100  
0
5
6
7
8
9
10  
11  
12  
0
100 200 300 400 500 600 700 800 900  
V

GE

[V]  
I

C

[A]  
Final Data Sheet  
6
V3.0,ꢀꢀ2017-06-14  

FS900R08A2P2_B32  
HybridPACKªꢀ2ꢀModule  
switchingꢀlossesꢀIGBT,Inverterꢀ(typical)  
E

on

ꢀ=ꢀfꢀ(R

G

),ꢀE

off

ꢀ=ꢀfꢀ(R

G

)  
transientꢀthermalꢀimpedanceꢀIGBT,Inverterꢀ  
Z

thJF

ꢀ=ꢀfꢀ(t)ꢀꢀꢀ(
∆
V/
∆
t=10ꢀdm³/min)  
V

GE

ꢀ=ꢀ±15ꢀV,ꢀI

C

ꢀ=ꢀ550ꢀA,ꢀV

CE

ꢀ=ꢀ400ꢀV  
180  
1
E

on

, T

vj

= 125°C  
E

off

, T

vj

= 125°C  
E

on

, T

vj

= 150°C  
E

off

, T

vj

= 150°C  
Z

thJF

: IGBT  
160  
140  
120  
100  
80  
0,1  
60  
0,01  
40  
i:  
1
2
3
4
5
r

i

[K/W]: 0,0062 0,022 0,0238 0,038 0,01  
τ

i

[s]: 0,0005
 
0,02 0,058 0,45 2,19  
20  
0
0,001  
0,001  
0
4
8
12  
16  
R

G

[
Ω
]  
20  
24  
28  
32  
0,01  
0,1  
t [s]  
1
10  
reverseꢀbiasꢀsafeꢀoperatingꢀareaꢀIGBT,Inverterꢀ(RBSOA)  
I

C

ꢀ=ꢀfꢀ(V

CE  

thermalꢀimpedanceꢀIGBT,Inverterꢀ  
R

thJF

ꢀ=ꢀfꢀ(
∆
V/
∆
t)  
)
V

GE

ꢀ=ꢀ±15ꢀV,ꢀR

Goff

ꢀ=ꢀ2ꢀ
Ω
,ꢀT

vj

ꢀ=ꢀ150°C  
coolingꢀfluidꢀ=ꢀ50%ꢀwater/50%ꢀethylenglycol  
2000  
0,104  
R

thJF

: IGBT  
1800  
1600  
1400  
1200  
1000  
800  
0,102  
0,100  
0,098  
0,096  
0,094  
0,092  
0,090  
600  
400  
I

C

, Modul  
I

C

, Chip  
200  
0
0
100 200 300 400 500 600 700 800  
5
6
7
8
9
10 11 12 13 14 15 16 17 18 19 20  
V

CE

[V]  
∆
V/
∆
t [dm³/min]  
Final Data Sheet  
7
V3.0,ꢀꢀ2017-06-14  

FS900R08A2P2_B32  
HybridPACKªꢀ2ꢀModule  
forwardꢀcharacteristicꢀofꢀDiode,ꢀInverterꢀ(typical)  
switchingꢀlossesꢀDiode,ꢀInverterꢀ(typical)  
I

F

ꢀ=ꢀfꢀ(V

F

)  
E

rec

ꢀ=ꢀfꢀ(I

F

)  
R

Gon

ꢀ=ꢀ3.3ꢀ
Ω
,ꢀV

CE

ꢀ=ꢀ400ꢀV  
1800  
22  
T

vj

= 25°C  
T

vj

= 125°C  
T

vj

= 150°C  
E

rec

, T

vj

= 125°C  
E

rec

, T

vj

= 150°C  
1700  
20  
18  
16  
14  
12  
10  
8
1600  
1500  
1400  
1300  
1200  
1100  
1000  
900  
800  
700  
600  
500  
400  
300  
200  
100  
0
6
4
2
0
0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4 1,6 1,8 2,0  
0
100 200 300 400 500 600 700 800 900  
V

F

[V]  
I

F

[A]  
switchingꢀlossesꢀDiode,ꢀInverterꢀ(typical)  
E

rec

ꢀ=ꢀfꢀ(R

G

)  
transientꢀthermalꢀimpedanceꢀDiode,ꢀInverterꢀ  
Z

thJF

=ꢀfꢀ(t)ꢀꢀꢀ(
∆
V/
∆
t=10ꢀdm³/min)  
I

F

ꢀ=ꢀ550ꢀA,ꢀV

CE

ꢀ=ꢀ400ꢀV  
18  
16  
14  
12  
10  
8
1
Z

thJF

: Diode  
E

rec

, T

vj

= 125°C  
E

rec

, T

vj

= 150°C  
0,1  
6
4
i:  
r

i

[K/W]: 0,0112 0,035 0,0373 0,0295 0,012  
τ

i

[s]: 0,0006
 
0,017 0,053
 
0,39 3,2  
1
2
3
4
5
2
0
0,01  
0,001  
0
4
8
12  
16  
R

G

[
Ω
]  
20  
24  
28  
32  
0,01  
0,1  
t [s]  
1
10  
Final Data Sheet  
8
V3.0,ꢀꢀ2017-06-14  

FS900R08A2P2_B32  
HybridPACKªꢀ2ꢀModule  
thermalꢀimpedanceꢀDiode,ꢀInverterꢀ  
R

thJF

ꢀ=ꢀfꢀ(
∆
V/
∆
t)  
NTC-Thermistor-temperatureꢀcharacteristicꢀ(typical)  
Rꢀ=ꢀfꢀ(T)  
coolingꢀfluidꢀ=ꢀ50%ꢀwater/50%ꢀethylenglycol  
0,132  
100000  
R

thJF

: Diode  
R

typ  

0,130  
0,128  
0,126  
0,124  
0,122  
0,120  
0,118  
10000  
1000  
100  
5
6
7
8
9
10 11 12 13 14 15 16 17 18 19 20  
0
20  
40  
60  
80  
T

C

[°C]  
100  
120  
140  
160  
∆
V/
∆
t [dm³/min]  
pressureꢀdropꢀinꢀcoolingꢀcircuit  
∆
pꢀ=ꢀfꢀ(
∆
V/
∆
t)  
coolingꢀfluidꢀ=ꢀ50%ꢀwater/50%ꢀethylenglycol,ꢀT

F

ꢀ=ꢀ25°C  
400  
∆
p: Modul  
360  
320  
280  
240  
200  
160  
120  
80  
40  
0
0
2
4
6
8
10  
12  
14  
16  
18  
20  
∆
V/
∆
t [dm³/min]  
Final Data Sheet  
9
V3.0,ꢀꢀ2017-06-14  

FS900R08A2P2_B32  
HybridPACKªꢀ2ꢀModule  
7ꢀꢀꢀꢀꢀCircuitꢀdiagram  
P3  
P2  
P1  
T11  
C5  
C3  
C1  
T
T12  
G5  
E5  
G3  
E3  
G1  
E1  
T21  
3
2
1
T
C6  
C4  
C2  
T22  
T31  
G6  
E6  
G4  
E4  
G2  
E2  
T
T32  
N3  
N2  
N1  
Final Data Sheet  
10  
V3.0,ꢀꢀ2017-06-14  

FS900R08A2P2_B32  
HybridPACKªꢀ2ꢀModule  
8ꢀꢀꢀꢀꢀPackageꢀoutlines  
Drawing: D00044455.00.A  
edges general
 
tolerances surface  
ISO 8015 principle of independency  
dimensions ISO 14405
GG  
1. DIN 16742-TG6  
DIN ISO  
13715  
target geometry according CAD file  
DIN EN ISO  
1302  
2. DIN ISO 2768-mk  
with general tolerances  
method of least-squares  
1
All dimensions refer to module in delivery condition  
0
A ( 5 : 1 )  
Au coating all side  
C ( 5 : 1 )  
+
0
,125  
15,75  
–
0,075  
+
–
0
68,75  
0,2  
+
–
0
0,64  
0,3  
(213)  
D ( 3 : 1 )  
A
A
Pin-Fin  
pedestal  
D
(216)  
208,7  
B
M6/10 depth  
9x  
92,2
5
B
0,4  
90,7
5
B
0,2  
88,05  
«
3  
A1  
«
3  
A2  
«
3  
A3  
«
3  
A4  
D
E
31  
27,64  
84,5  
3
2
1
E3  
G3  
E5  
G5  
E1  
G1  
for PCB mounting  
thread forming screw  
3,0 10
 
mm (8x)  
22,56  
14,94  
7,32  
P
0,8
4
A
D
–
E
B
-C  
24x  
L
x
P
0,8
5
AFG  
L
C
C3  
C1  
C5  
assembly aid for PCB  
P
3 10
 
mm (2x)  
10  
9x  
Group2  
T31  
T21  
T11  
Group4  
Group6  
Group5  
x
0
0
T22  
T12  
C2  
T32  
C6  
7,32  
14,94  
22,56  
P
0,8
4
A
D
–
E
B
-C  
L
2x  
Group3  
N2  
Group1  
C4  
P
0,8
4
A
D
–
E
B
-C  
1
6
B
0,2  
G6  
E6  

G4

L  
G2  
E2  
E4  
8x  
F
N3  
P3  
P2  
N1  
P1  
27,64  
31  
0
3,55  
6,2
5
B
0,1  
7,7
5
B
0,4  
«
3  
A8  
«
3  
A7  
«
3  
A6  
«
3  
A5  
208,7  
C
Group 1, 3, 6 ( 2 : 1 )  
K
Group 2, 4, 6 ( 2 : 1 )  
I
20,32  
20,32  
15,24  
12,7  
5,08  
7,62  
0
0
P
0,
5
AJ
J
-K  
P
0,
5
AH
H
-I  
L
4x  
L
4x  
H
J
Final Data Sheet  
11  
V3.0,ꢀꢀ2017-06-14  

FS900R08A2P2_B32  
HybridPACKªꢀ2ꢀModule  
9ꢀꢀꢀꢀꢀLabelꢀCodes  
9.1ꢀꢀꢀꢀModuleꢀCode  
CodeꢀFormat  
Data Matrix  
Encoding  
ASCII Text  
SymbolꢀSize  
Standard  
16×16  
IEC24720 and IEC16022  
CodeꢀContent  
Content  
Digit  
Exampleꢀ(below)  
Module Serial Number  
Module Material Number  
Production Order Number  
Datecode (Production Year)  
Datecode (Production Week)  
1 – 5  
71549  
142846  
55054991  
15  
6 – 11  
12 – 19  
20 – 21  
22 – 23  
30  
Example  
71549142846550549911530  
9.2ꢀꢀꢀꢀPackingꢀCode  
CodeꢀFormat  
Code128  
Code Set A  
34 digits  
Encoding  
SymbolꢀSize  
Standard  
IEC8859-1  
CodeꢀContent  
Content  
Identifier  
Digit  
Exampleꢀ(below)  
Backend Construction Number  
Production Lot Number  
Serial Number  
Date Code  
Box Quantity  
X
1T  
S
9D  
Q
2 – 9  
95056609  
2X0003E0  
754389  
1139  
12 – 19  
21 – 25  
28 – 31  
33 – 34  
15  
Example  
X950566091T2X0003E0S754389D1139Q15  
Final Data Sheet  
12  
V3.0,ꢀꢀ2017-06-14  

FS900R08A2P2_B32  
HybridPACKªꢀ2ꢀModule  
RevisionꢀHistory  
Major changes since previous revision  
Revision History  
Reference  
Date  
Description  
V3.0  
2017-06-14  
–
Final Data Sheet  
13  
V3.0,ꢀꢀ2017-06-14  

FS900R08A2P2_B32  
HybridPACKªꢀ2ꢀModule  
Termsꢀ&ꢀConditionsꢀofꢀusage  
ꢀ
Editionꢀ2014-05-30  
Publishedꢀby  
InfineonꢀTechnologiesꢀAG  
81726ꢀMunich,ꢀGermany  
©ꢀ2014ꢀInfineonꢀTechnologiesꢀAG  
AllꢀRightsꢀReserved.  
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Trademarks  
ꢀ
TrademarksꢀofꢀInfineonꢀTechnologiesꢀAG  
AURIX™,ꢀC166™,ꢀCanPAK™,ꢀCIPOS™,ꢀCIPURSE™,ꢀEconoPACK™,ꢀCoolMOS™,ꢀCoolSET™,ꢀCORECONTROL™,ꢀCROSSAVE™,ꢀDAVE™,  
DI-POL™,ꢀEasyPIM™,ꢀEconoBRIDGE™,ꢀEconoDUAL™,ꢀEconoPIM™,ꢀEconoPACK™,ꢀEiceDRIVER™,ꢀeupec™,ꢀFCOS™,ꢀHITFET™,  
HybridPACK™,ꢀI²RF™,ꢀISOFACE™,ꢀIsoPACK™,ꢀMIPAQ™,ꢀModSTACK™,ꢀmy-d™,ꢀNovalithIC™,ꢀOptiMOS™,ꢀORIGA™,ꢀPOWERCODE™,  
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Last update  
2011-11-11  
Final Data Sheet  
14  
V3.0,ꢀꢀ2017-06-14  

wꢀwꢀwꢀ.ꢀiꢀnꢀfꢀiꢀnꢀeꢀoꢀnꢀ.ꢀcꢀoꢀm  
PublishedꢀbyꢀInfineonꢀTechnologiesꢀAG