Infineon-Technologies-IAUT260N10S5N019
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IAUT260N10S5N019
OptiMOS™-5 Power-Transistor
Product Summary
V
DS
R
DS(on)
I
D
100
1.9
V
m
A
260
Features
P/G-HSOF-8-1
• N-channel – Enhancement mode
Tab
• AEC qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green product (RoHS compliant)
• Ultra low Rds(on)
8
1
1
8
Tab
• 100% Avalanche tested
Type
Package
Marking
IAUT260N10S5N019 P/G-HSOF-8-1
5N10019
Maximum ratings,
at
T
j
=25 °C, unless otherwise specified
Value
Parameter
Symbol
Conditions
Unit
I
D
T
C
=25°C,
V
GS
=10V
T
C
=100 °C,
Continuous drain current
260
A
197
V
GS
=10 V
1)
Pulsed drain current
1)
I
D,pulse
E
AS
I
AS
T
C
=25 °C
1040
400
Avalanche energy, single pulse
1)
Avalanche current, single pulse
Gate source voltage
I
D
=130 A
mJ
A
–
260
V
GS
P
tot
–
±20
V
T
C
=25 °C
Power dissipation
300
W
°C
T
j
,
T
stg
–
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
–
–
-55 … +175
55/175/56
Rev. 1.0
page 1
2017-10-02
IAUT260N10S5N019
Values
typ.
Parameter
Symbol
Conditions
Unit
min.
max.
Thermal characteristics
1)
R
thJC
Thermal resistance, junction – case
–
–
–
0.5
K/W
Electrical characteristics,
at
T
j
=25 °C, unless otherwise specified
Static characteristics
V
GS
=0 V,
I
D
=1 mA
V
(BR)DSS
Drain-source breakdown voltage
Gate threshold voltage
100
2.2
–
–
–
3.8
1
V
V
GS(th)
V
DS
=
V
GS
,
I
D
=210 µA
3.0
0.1
V
DS
=100 V,
V
GS
=0 V,
T
j
=25 °C
I
DSS
Zero gate voltage drain current
µA
V
DS
=50 V,
V
GS
=0 V,
–
1
20
T
j
=85 °C
1)
I
GSS
V
GS
=20 V,
V
DS
=0 V
Gate-source leakage current
–
–
–
–
100 nA
R
DS(on)
V
GS
=6 V,
I
D
=75 A
Drain-source on-state resistance
2.0
1.6
2.5
1.9
m
Ω
V
GS
=10 V,
I
D
=100 A
Rev. 1.0
page 2
2017-10-02
IAUT260N10S5N019
Values
typ.
Parameter
Symbol
Conditions
Unit
min.
max.
Dynamic characteristics
1)
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
C
iss
C
oss
C
rss
t
d(on)
t
r
–
–
–
–
–
–
–
9100
1462
61
11830 pF
1900
V
GS
=0 V,
V
DS
=50 V,
f
=1 MHz
92
21
–
–
–
–
ns
11
V
DD
=50 V,
V
GS
=10 V,
I
D
=100 A,
R
G
=3.5
t
d(off)
t
f
Turn-off delay time
Fall time
49
38
Gate Charge Characteristics
1)
Gate to source charge
Gate to drain charge
Gate charge total
Q
gs
–
–
–
–
41
28
54
42
166
–
nC
Q
gd
V
DD
=50 V,
I
D
=100 A,
GS
=0 to 10 V
V
Q
g
128
4.8
V
plateau
Gate plateau voltage
V
A
Reverse Diode
Diode continous forward current
1)
Diode pulse current
1)
I
S
–
–
–
–
260
T
C
=25 °C
I
S,pulse
1040
V
GS
=0 V,
I
F
=100 A,
T
j
=25 °C
V
SD
Diode forward voltage
–
0.9
1.3
V
Reverse recovery time
1)
t
rr
–
–
80
–
–
ns
V
R
=50 V,
I
F
=50A,
d
i
F
/d
t
=100 A/µs
Reverse recovery charge
1)
Q
rr
180
nC
1)
Defined by design. Not subject to production test.
Rev. 1.0
page 3
2017-10-02
IAUT260N10S5N019
1 Power dissipation
2 Drain current
P
tot
= f(
T
C
);
V
GS
≥
6 V
I
D
= f(
T
C
);
V
GS
≥
6 V
350
300
250
200
150
100
50
300
250
200
150
100
50
0
0
0
50
100
150
200
0
50
100
150
200
T
C
[
°
C]
T
C
[
°
C]
3 Safe operating area
4 Max. transient thermal impedance
Z
thJC
= f(
t
p
)
I
D
= f(
V
DS
);
T
C
= 25 °C;
D
= 0
parameter:
t
p
parameter:
D
=
t
p
/
T
10
0
10000
1000
100
10
0.5
1 µs
10
-1
10 µs
0.1
100 µs
0.05
1 ms
0.01
10
-2
single pulse
10
-3
1
0.1
1
10
100
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
V
DS
[V]
t
p
[s]
Rev. 1.0
page 4
2017-10-02
IAUT260N10S5N019
5 Typ. output characteristics
I
D
= f(
V
DS
);
T
j
= 25 °C
parameter:
V
GS
6 Typ. drain-source on-state resistance
R
DS(on)
= (
I
D
);
T
j
= 25 °C
parameter:
V
GS
12
7 V
6 V
5.5 V
10 V
5 V
6.5 V
1000
800
600
400
200
0
10
8
6 V
6
5.5 V
4
5 V
2
6.5 V
10 V
0
0
300
600
I
D
[A]
900
1200
0
1
2
3
4
5
6
7
V
DS
[V]
7 Typ. transfer characteristics
I
D
= f(
V
GS
);
V
DS
= 6V
parameter:
T
j
8 Typ. drain-source on-state resistance
R
DS(on)
= f(
T
j
);
I
D
= 100 A;
V
GS
= 10 V
1200
1000
800
3.4
3.2
3
2.8
2.6
2.4
2.2
2
600
1.8
1.6
1.4
1.2
1
400
175 °C
200
25 °C
-55 °C
0
-60
-20
20
60
100
140
180
2
4
6
8
T
j
[
°
C]
V
GS
[V]
Rev. 1.0
page 5
2017-10-02
IAUT260N10S5N019
9 Typ. gate threshold voltage
GS(th)
= f(
T
j
);
V
GS
=
V
DS
10 Typ. capacitances
V
C
= f(
V
DS
);
V
GS
= 0 V;
f
= 1 MHz
parameter:
I
D
10
5
4
3.5
3
Ciss
10
4
2100 µA
Coss
210 µA
10
3
2.5
2
Crss
10
2
1.5
1
0
20
40
60
80
100
-60
-20
20
60
T
j
[
°
C]
100
140
180
V
DS
[V]
11 Typical forward diode characteristicis
12 Typ. avalanche characteristics
I
AS
= f(
t
AV
IF = f(V
SD
)
)
parameter:
T
j
parameter: T
j(start)
10
4
10
3
10
2
1000
25 °C
100 °C
150 °C
100
25 °C
175 °C
10
10
1
10
0
1
1
0
0.2
0.4
0.6
0.8
1
1.2
1.4
10
100
1000
V
SD
[V]
t
AV
[µs]
Rev. 1.0
page 6
2017-10-02
IAUT260N10S5N019
13 Typical avalanche energy
AS
= f(
T
j
)
14 Drain-source breakdown voltage
E
V
BR(DSS)
= f(
T
j
);
I
D_typ
= 1 mA
parameter:
I
D
108
107
106
105
104
103
102
101
100
99
800
65 A
600
400
200
0
130 A
98
260 A
97
96
95
-60
-20
20
60
100
140
180
25
75
125
175
T
j
[
°
C]
T
j
[
°
C]
15 Typ. gate charge
GS
= f(
Q
gate
);
I
D
= 100 A pulsed
16 Gate charge waveforms
V
parameter:
V
DD
10
9
8
7
6
5
4
3
2
1
V
GS
20 V
Q
g
80 V
50 V
Q
gate
Q
gd
Q
gs
0
0
40
80
Q
gate
[nC]
120
Rev. 1.0
page 7
2017-10-02
IAUT260N10S5N019
Published by
Infineon Technologies AG
81726 Munich, Germany
©
Infineon Technologies AG 2017
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions
or characteristics. With respect to any examples or hints given herein, any typical values stated
herein and/or any information regarding the application of the device, Infineon Technologies hereby
disclaims any and all warranties and liabilities of any kind, including without limitation, warranties
of non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact
Warnings
Due to technical requirements, components may contain dangerous substances.
For information on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with the
express written approval of Infineon Technologies, if a failure of such components can reasonably be
expected to cause the failure of that life-support device or system or to affect the safety or
effectiveness of that device or system. Life support devices or systems are intended to be implanted
in the human body or to support and/or maintain and sustain and/or protect human life.
If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
Rev. 1.0
page 8
2017-10-02
IAUT260N10S5N019
Revision History
Version
Date
Changes
Final Data Sheet
Version 1.0
2017-10-02
Rev. 1.0
page 9
2017-10-02
