Infineon-Technologies-IGA03N120H2
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IGA03N120H2
HighSpeed 2-Technology
C
•
Designed for:
– TV – Horizontal Line Deflection
G
E
•
2
nd
generation HighSpeed-Technology
for 1200V applications offers:
– loss reduction in resonant circuits
– temperature stable behavior
– parallel switching capability
– tight parameter distribution
–
E
off
optimized for
I
C
=3A
PG-TO220-3-34
(FullPAK)
– simple Gate-Control
PG-TO220-3-31
(FullPAK)
•
•
•
Qualified according to JEDEC
1
for target applications
Pb-free lead plating; RoHS compliant
Type
V
CE
I
C
E
off
T
j,max
150
°
C
150
°
C
Marking
Package
IGA03N120H2 1200V
IGA03N120H2 1200V
3A
3A
0.15mJ
0.15mJ
G03H1202 PG-TO-220-3-31
G03H1202 PG-TO-220-3-34
Maximum Ratings
Parameter
Symbol
Value
Unit
Collector-emitter voltage
Triangular collector peak current (
V
GS
= 15V)
T
C
= 100
°
C,
f
= 32kHz
Pulsed collector current,
t
p
limited by
T
jmax
Turn off safe operating area
V
C
E
I
C
pk
1200
V
A
8.2
9
9
I
C
pul s
–
V
CE
≤
1200V,
T
j
≤
150
°
C
Gate-emitter voltage
Power dissipation
V
G E
P
t
o
t
V
W
±
20
29
T
C
= 25
°
C
Operating junction and storage temperature
Soldering temperature, 1.6mm (0.063 in.) from case for 10s
Isolation Voltage
T
j
,
T
s
tg
–
V
i
sol
-40…+150
260
°
C
2500
V
r
ms
1
J-STD-020 and JESD-022
1
Rev. 2.2
July 06
Power Semiconductors
IGA03N120H2
Thermal Resistance
Parameter
Symbol
Conditions
Max. Value
Unit
Characteristic
IGBT thermal resistance,
junction – case
Thermal resistance,
junction – ambient
R
t
h
JC
R
t
h
JA
4.3
64
K/W
Electrical Characteristic,
at
T
j
= 25
°
C, unless otherwise specified
Value
Typ.
Parameter
Symbol
Conditions
Unit
min.
max.
Static Characteristic
Collector-emitter breakdown voltage
V
(
B
R)CES
1200
–
–
V
V
G
E
=
0V,
I
C
=
300
µ
A
Collector-emitter saturation voltage
V
C
E
( sat )
V
G E
=
1
5V,
I
C
=
3A
T
j
=25
°
C
–
–
2.2
2.5
2.8
–
T
j
=
150
°
C
V
G E
=
1
0V,
I
C
=
3A,
T
j
=25
°
C
–
2.4
3
–
Gate-emitter threshold voltage
Zero gate voltage collector current
V
G
E
(t h)
I
C
ES
2.1
3.9
I
C
=
90
µ
A
,
V
C
E
=
V
G E
CE
=
1200V,
V
G
E
=
0V
V
µ
A
–
–
–
–
20
80
T
j
=25
°
C
T
j
=
150
°
C
Gate-emitter leakage current
Transconductance
I
G
ES
g
f
s
V
V
CE
=
0V,
V
G
E
=
20V
CE
=
20V,
I
C
=
3A
–
–
–
2
100
–
nA
S
Dynamic Characteristic
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
C
i
ss
C
o
ss
C
r
ss
V
V
CE
=
25V
G
E
=
0V
–
–
–
–
205
24
7
–
–
–
–
pF
f
=
1MHz
V
V
Q
G
ate
CC
=
960V,
I
C
=
3A
G
E
=
15V
8.6
nC
nH
Internal emitter inductance
L
E
–
7
–
measured 5mm (0.197 in.) from case
2
Rev. 2.2
July 06
Power Semiconductors
IGA03N120H2
Switching Characteristic, Inductive Load,
at
T
j
=25
°
C
Value
Unit
Parameter
Symbol
Conditions
min.
Typ.
max.
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
t
d
(on)
t
r
t
d
(off)
t
f
E
o
n
E
o
ff
E
t s
–
–
–
–
–
–
–
9.2
5.2
281
29
0.14
0.15
0.29
–
–
–
–
–
–
–
ns
T
j
=25
°
C
V
V
CC
=
800V,
I
C
=
3A
G
E
=
0V/15V
R
G
=
82
Ω
L
σ
2
)
=
180nH
C
σ
1
)
=
40pF
mJ
Energy losses include
“tail” and diode
2)
reverse recovery.
Switching Characteristic, Inductive Load,
at
T
j
=150
°
C
Value
Typ.
Parameter
Symbol
Conditions
Unit
min.
max.
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
t
d
(on)
t
r
t
d
(off)
t
f
E
o
n
E
o
ff
E
t s
–
–
–
–
–
–
–
9.4
6.7
340
63
0.22
0.26
0.48
–
–
–
–
–
–
–
ns
T
j
=
150
°
C
V
V
CC
=
800V,
I
C
=
3A
G
E
=
0V/15V
R
G
=
82
Ω
L
σ
1
)
=
180nH
C
σ
1
)
=
40pF
mJ
Energy losses include
“tail” and diode
3)
reverse recovery.
Switching Energy ZVT, Inductive Load
Value
typ.
Parameter
Symbol
Conditions
Unit
min.
max.
IGBT Characteristic
Turn-off energy
E
o
ff
V
V
CC
=
800V,
I
C
=
3A
mJ
G
E
=
0V/15V
R
G
=
82
Ω
,
C
r
1
)
=
4nF
T
j
=25
°
C
–
–
0.05
0.09
–
–
T
j
=
150
°
C
2 )
Leakage inductance L
σ
and stray capacity C
σ
due to dynamic test circuit in figure E
3 )
Commutation diode from device IKP03N120H2
3
Rev. 2.2
July 06
Power Semiconductors
IGA03N120H2
12A
10A
8A
I
c
t
p
=10
µ
s
10A
1A
20
µ
s
50
µ
s
100
µ
s
T
C
=25°C
6A
1ms
100ms
DC
T
C
=100°C
4A
0,1A
0,01A
I
c
2A
0A
1V
10V
100V
1000V
10Hz
100Hz
1kHz
10kHz 100kHz
f
,
SWITCHING FREQUENCY
V
CE
,
COLLECTOR
–
EMITTER VOLTAGE
Figure 1. Collector current as a function of
Figure 2. Safe operating area
switching frequency
(
D =
0,
T
C
= 25
°
C,
T
j
≤
150
°
C)
(
T
j
≤
150
°
C,
D =
0.5,
V
CE
= 800V,
V
GE
= +15V/0V,
R
G
= 82
Ω
)
30W
20W
10W
0W
8A
6A
4A
2A
0A
25°C
50°C
75°C
100°C 125°C 150°C
25°C
50°C
75°C 100°C
125°C 150°C
T
C
,
CASE TEMPERATURE
T
C
,
CASE TEMPERATURE
Figure 3. Power dissipation as a function
of case temperature
Figure 4. Collector current as a function of
case temperature
(
T
j
≤
150
°
C)
(
V
GE
≤
15V,
T
j
≤
150
°
C)
4
Rev. 2.2
July 06
Power Semiconductors
IGA03N120H2
10A
8A
6A
4A
2A
0A
10A
8A
6A
4A
2A
0A
V
GE
=15V
12V
10V
8V
V
GE
=
15V
12V
10V
8V
6V
6V
0V
1V
2V
3V
4V
5V
0V
1V
2V
3V
4V
5V
V
CE
,
COLLECTOR
–
EMITTER VOLTAGE
V
CE
,
COLLECTOR
–
EMITTER VOLTAGE
Figure 5. Typical output characteristics
Figure 6. Typical output characteristics
(
T
j
= 25
°
C)
(
T
j
= 150
°
C)
12A
10A
3V
I
C
=6A
I
C
=3A
8A
2V
T
j
=+150°C
I
C
=1.5A
T
j
=+25°C
6A
4A
2A
0A
1V
0V
3V
5V
7V
9V
-50°C
0°C
50°C
100°C
150°C
V
GE
,
GATE
–
EMITTER VOLTAGE
T
j
,
JUNCTION TEMPERATURE
Figure 7. Typical transfer characteristics
Figure 8. Typical collector-emitter
(
V
CE
= 20V)
saturation voltage as a function of junction
temperature
(
V
GE
= 15V)
5
Rev. 2.2
July 06
Power Semiconductors
IGA03N120H2
1000ns
100ns
10ns
1000ns
100ns
10ns
t
d(off)
t
d(off)
t
f
t
f
t
d(on)
t
d(on)
t
r
t
r
1ns
1ns
0
Ω
50
Ω
100
Ω
150
Ω
0A
2A
4A
I
C
,
COLLECTOR CURRENT
R
G
,
GATE RESISTOR
Figure 9. Typical switching times as a
function of collector current
(inductive load,
T
j
= 150
°
C,
Figure 10. Typical switching times as a
function of gate resistor
(inductive load,
T
j
= 150
°
C,
V
CE
= 800V,
V
GE
= +15V/0V,
I
C
= 3A,
V
CE
= 800V,
V
GE
= +15V/0V,
R
G
= 82
Ω
,
dynamic test circuit in Fig.E)
dynamic test circuit in Fig.E)
1000ns
5V
4V
3V
2V
1V
0V
t
d(off)
100ns
ma
x
.
t
f
typ.
t
d(on)
10ns
min.
t
r
1ns
25°C
50°C
75°C 100°C
125°C 150°C
-50°C
0°C
50°C
100°C
150°C
T
j
,
JUNCTION TEMPERATURE
T
j
,
JUNCTION TEMPERATURE
Figure 11. Typical switching times as a
function of junction temperature
(inductive load,
V
CE
= 800V,
Figure 12. Gate-emitter threshold voltage
as a function of junction temperature
(
I
C
= 0.09mA)
V
GE
= +15V/0V,
I
C
= 3A,
R
G
= 82
Ω
,
dynamic test circuit in Fig.E)
6
Rev. 2.2
July 06
Power Semiconductors
IGA03N120H2
1.0mJ
0.5mJ
0.0mJ
1
)
E
on
and
E
ts
include losses
1
)
E
on
and
E
ts
include losses
1
E
ts
0.7mJ
0.6mJ
0.5mJ
0.4mJ
0.3mJ
0.2mJ
due to diode recovery.
1
E
ts
due to diode recovery.
E
off
1
E
on
E
off
1
E
on
0
Ω
50
Ω
100
Ω
150
Ω
200
Ω
250
Ω
0A
2A
4A
I
C
,
COLLECTOR CURRENT
R
G
,
GATE RESISTOR
Figure 13. Typical switching energy losses
as a function of collector current
(inductive load,
T
j
= 150
°
C,
Figure 14. Typical switching energy losses
as a function of gate resistor
(inductive load,
T
j
= 150
°
C,
V
CE
= 800V,
V
GE
= +15V/0V,
I
C
= 3A,
V
CE
= 800V,
V
GE
= +15V/0V,
R
G
= 82
Ω
,
dynamic test circuit in Fig.E )
dynamic test circuit in Fig.E )
0.5mJ
1
)
E
on
and
E
ts
include losses
due to diode recovery.
1
I
C
=3A,
T
J
=150°C
E
ts
0.16mJ
0.12mJ
0.08mJ
0.04mJ
0.00mJ
0.4mJ
0.3mJ
0.2mJ
0.1mJ
I
C
=3A,
T
J
=25°C
E
off
I
C
=1A,
T
J
=150°C
1
E
on
I
C
=1A,
T
J
=25°C
0V/us
1000V/us
2000V/us
3000V/us
25°C
80°C
125°C
150°C
dv/dt
, VOLTAGE SLOPE
T
j
,
JUNCTION TEMPERATURE
Figure 15. Typical switching energy losses
as a function of junction temperature
(inductive load,
V
CE
= 800V,
Figure 16. Typical turn off switching energy
loss for soft switching
(
dynamic test circuit in Fig. E
)
V
GE
= +15V/0V,
I
C
= 3A,
R
G
= 82
Ω
,
dynamic test circuit in Fig.E )
7
Rev. 2.2
July 06
Power Semiconductors
IGA03N120H2
1nF
100pF
10pF
20V
15V
10V
5V
C
iss
U
CE
=240V
U
CE
=960V
C
oss
C
rss
0V
0nC
10nC
20nC
30nC
0V
10V
20V
30V
V
CE
,
COLLECTOR
–
EMITTER VOLTAGE
Q
GE
,
GATE CHARGE
Figure 19. Typical capacitance as a
function of collector-emitter voltage
(
V
GE
= 0V,
f
= 1MHz)
Figure 18. Typical gate charge
(
I
C
= 3A)
10
1
K/W
D
=0.5 0.1
0.2
10
0
K/W
10
-1
K/W
10
-2
K/W
R
, ( K
/
W )
τ
,
( s )
5,2404
1,4285
1,8838
0,4057
0,4234
0,3241
0,1021
0,1340
1,7688
0,07592
0.05
0.02
0.01
0,005018
0,000595
0,000126
0,000018
R
1
R
2
single pulse
C
1
=
τ
1
/
R
1
C
2
=
τ
2
/
R
2
1µs 10µ
s
1
00µs
1ms 10m
s
1
00ms 1s
10s
t
P
,
PULSE WIDTH
Figure 17. IGBT transient thermal
impedance as a function of pulse width
(
D
=
t
P
/
T
)
8
Rev. 2.2
July 06
Power Semiconductors
IGA03N120H2
PG-TO-220-3-31 (FullPAK)
dimensions
symbol
[mm]
[inch]
min
10.37
15.86
0.65
max
10.63
16.12
0.78
min
max
A
B
C
D
E
F
0.4084
0.6245
0.0256
0.4184
0.6345
0.0306
2.95 typ.
3.15
0.1160 typ.
3.25
6.56
13.73
3.43
0.63
1.36
0.124
0.2384
0.5304
0.125
0.128
0.2584
0.5404
0.135
6.05
13.47
3.18
0.45
1.23
G
H
K
L
0.0177
0.0484
0.0247
0.0534
M
N
P
T
2.54 typ.
0.100 typ.
4.57
2.57
2.51
4.83
2.83
2.62
0.1800
0.1013
0.0990
0.1900
0.1113
0.1030
9
Rev. 2.2
July 06
Power Semiconductors
IGA03N120H2
Edition 2006-01
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 12/14/06.
All Rights Reserved.
Attention please!
The information given in this data sheet shall in no event be regarded as a guarantee of conditions or
characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device, Infineon Technologies
hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of
non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest
Warnings
Due to technical requirements components may contain dangerous substances. For information on the types
in question please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express
written approval of Infineon Technologies, if a failure of such components can reasonably be expected to
cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or
system. Life support devices or systems are intended to be implanted in the human body, or to support
and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health
of the user or other persons may be endangered.
10
Rev. 2.2
July 06
Power Semiconductors
