Infineon-Technologies-IGB10N60TATMA1
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IGB10N60T
p
TRENCHSTOP
™
Series
Low Loss IGBT : IGBT in TRENCHSTOP
™
and Fieldstop technology
Features:
C
E
Very low
V
CE(sat)
1.5V (typ.)
Maximum Junction Temperature 175°C
Short circuit withstand time 5
s
Designed for frequency inverters for washing machines, fans, pumps and vacuum
cleaners
G
TRENCHSTOP
™
technology for 600V applications offers :
– very tight parameter distribution
– high ruggedness, temperature stable behavior
NPT technology offers easy parallel switching capability due to
positive temperature coefficient in V
CE(sat)
Low EMI
Low Gate Charge
Qualified according to JEDEC
1
for target applications
Pb-free lead plating; RoHS compliant
PG-TO263-3
Type
V
CE
I
C
V
CE(sat
),Tj=25°C
T
j,max
Marking Code
Package
IGB10N60T
600V 10A
1.5V
G10T60
PG-TO263-3
175
C
Maximum Ratings
Parameter
Symbol
Value
Unit
V
C
E
600
V
Collector-emitter voltage,
T
j
≥
25
C
DC collector current, limited by
T
jmax
T
C
= 25
C
24
18
I
C
A
T
C
= 100
C
Pulsed collector current,
t
p
limited by
T
jmax
I
C
pul s
30
30
–
Turn off safe operating area,
V
CE
= 600V,
T
j
= 175
C,
t
p
= 1µs
Gate-emitter voltage
Short circuit withstand time
2)
V
G E
V
20
t
S
C
5
s
W
V
GE
= 15V,
V
CC
400V,
T
j
150
C
Power dissipation
T
C
= 25
C
P
t
ot
T
j
110
Operating junction temperature
Storage temperature
-40…+175
-55…+150
260
T
s
tg
C
Soldering temperature (reflow soldering, MSL1)
1
J-STD-020 and JESD-022
2)
Allowed number of short circuits: <1000; time between short circuits: >1s.
1
Rev. 2.1
30.04.2015
IFAG IPC TD VLS
IGB10N60T
p
TRENCHSTOP
™
Series
Thermal Resistance
Parameter
Symbol
Conditions
Max. Value
Unit
Characteristic
IGBT thermal resistance,
junction
–
case
R
t
hJC
1.35
K/W
Thermal resistance,
junction
–
ambient
R
t
hJA
Footprint
6cm² Cu
65
40
Electrical Characteristic,
at
T
j
= 25
C, unless otherwise specified
Value
typ.
Parameter
Symbol
Conditions
Unit
min.
max.
Static Characteristic
Collector-emitter breakdown voltage
V
(
BR)CES
V
G
E
=
0V,
I
C
=
0.2mA
600
–
–
V
Collector-emitter saturation voltage
V
C
E(sat)
V
G E
=
1
5V,
I
C
=
10A
T
j
=25
C
–
–
1.5
1.8
2.05
–
T
j
=175
C
Gate-emitter threshold voltage
V
G
E(th)
I
C
ES
I
C
=
0.3mA,
V
C
E
=
V
G E
4.1
4.6
5.7
Zero gate voltage collector current
V
C
E
=
600V
,
V
G
E
=
0V
µA
T
j
=25
C
–
–
–
–
–
40
1000
100
–
T
j
=175
C
–
Gate-emitter leakage current
Transconductance
I
G
ES
g
f
s
V
C
E
=
0V,
V
G
E
=20V
V
C
E
=
20V,
I
C
=
10A
–
6
nA
S
Integrated gate resistor
R
G
int
none
Ω
Dynamic Characteristic
Input capacitance
C
i
ss
V
C
E
=
25V,
V
G
E
=
0V,
f
=
1MHz
–
–
–
–
551
40
–
–
–
–
pF
Output capacitance
Reverse transfer capacitance
Gate charge
C
o
ss
C
r
ss
17
Q
G
ate
V
C
C
=
480V,
I
C
=
10A
V
G
E
=
15V
62
nC
nH
A
Internal emitter inductance
L
E
–
–
7
–
–
measured 5mm (0.197 in.) from case
Short circuit collector current
1)
I
C
(SC)
100
V
G
E
=
15V,
t
S
C
5
s
V
C
C
=
4
00V,
T
j
=
2
5
C
Switching Characteristic, Inductive Load,
at
T
j
=25
C
Value
typ.
Parameter
Symbol
Conditions
Unit
min.
max.
IGBT Characteristic
T
j
=
25
C
,
Turn-on delay time
t
d
(on)
–
12
–
ns
1)
Allowed number of short circuits: <1000; time between short circuits: >1s.
2
Rev. 2.1
30.04.2015
IFAG IPC TD VLS
IGB10N60T
p
TRENCHSTOP
™
Series
V
C
C
=
400V,
I
C
=
10A,
V
G
E
=
0/15V,
r
G
=
23
,
L
=
60nH,
C
=
40pF
Rise time
t
r
–
8
–
–
–
–
–
–
Turn-off delay time
Fall time
t
d
(off)
t
f
–
215
38
–
L
,
C
f
rom Fig. E
Energy losses include
“tail” and diode reverse
recovery.
Turn-on energy
Turn-off energy
Total switching energy
E
o
n
E
o
ff
E
t s
–
0.16
0.27
0.43
mJ
–
–
Switching Characteristic, Inductive Load,
at
T
j
=175
C
Value
typ.
Parameter
Symbol
Conditions
Unit
min.
max.
IGBT Characteristic
Turn-on delay time
Rise time
T
j
=
175
C
,
t
d
(on)
t
r
t
d
(off)
t
f
–
–
–
–
–
–
–
10
11
–
–
–
–
–
–
–
ns
V
C
C
=
400V,
I
C
=
10A,
V
G
E
=
0/15V,
r
G
=
23
,
L
=
60nH,
C
=
40pF
Turn-off delay time
Fall time
233
63
L
,
C
f
rom Fig. E
Energy losses include
“tail” and diode reverse
recovery.
Turn-on energy
Turn-off energy
Total switching energy
E
o
n
E
o
ff
E
t s
0.26
0.35
0.61
mJ
3
Rev. 2.1
30.04.2015
IFAG IPC TD VLS
IGB10N60T
p
TRENCHSTOP
™
Series
t
p
=1µs
30A
25A
20A
15A
10A
5A
5µs
10A
T
C
=80°C
20µs
T
C
=110°C
100µs
500µs
1A
I
c
10ms
DC
I
c
0A
10Hz
0,1A
100Hz
1kHz
10kHz 100kHz
1V
10V
100V
1000V
f
,
SWITCHING FREQUENCY
V
CE
,
COLLECTOR
–
EMITTER VOLTAGE
Figure 1.
Collector current as a function of
switching frequency
Figure 2.
Safe operating area
(
D =
0,
T
C
= 25
C,
T
j
175
C;
V
GE
=0/15V)
(
T
j
175
C,
D =
0.5,
V
CE
= 400V,
V
GE
= 0/15V,
r
G
= 23
)
120W
100W
80W
60W
40W
20W
0W
20A
15A
10A
5A
0A
25°C
50°C
75°C 100°C
125°C 150°C
25°C
50°C
75°C
100°C 125°C 150°C
T
C
,
CASE TEMPERATURE
T
C
,
CASE TEMPERATURE
Figure 3.
Power dissipation as a function
of case temperature
Figure 4.
Collector current as a function of
case temperature
(
T
j
175
C)
(
V
GE
15V,
T
j
175
C)
4
Rev. 2.1
30.04.2015
IFAG IPC TD VLS
IGB10N60T
p
TRENCHSTOP
™
Series
30A
25A
20A
15A
10A
5A
30A
25A
V
G
E
=20V
V
G
E
=20V
15V
15V
20A
12V
10V
8V
12V
10V
15A
8V
6V
6V
10A
5A
0A
0A
0V
1V
2V
3V
4V
0V
1V
2V
3V
4V
5V
V
CE
,
COLLECTOR
–
EMITTER VOLTAGE
V
CE
,
COLLECTOR
–
EMITTER VOLTAGE
Figure 5.
Typical output characteristic
Figure 6.
Typical output characteristic
(
T
j
= 25°C)
(
T
j
= 175°C)
3,0V
2,5V
2,0V
1,5V
1,0V
0,5V
0,0V
25A
20A
15A
10A
I
C
=20A
I
C
=10A
I
C
=5A
T
J
=175°C
5A
25°C
0A
0V
2V
4V
6V
8V
10V
-50°C
0°C
50°C
100°C
150°C
V
GE
,
GATE-EMITTER VOLTAGE
T
J
,
JUNCTION TEMPERATURE
Figure 7.
Typical transfer characteristic
Figure 8.
Typical collector-emitter
(V
CE
=20V)
saturation voltage as a function
of junction temperature
(
V
GE
= 15V)
5
Rev. 2.1
30.04.2015
IFAG IPC TD VLS
IGB10N60T
p
TRENCHSTOP
™
Series
t
d(off)
t
d(off)
100ns
10ns
1ns
100ns
t
f
t
f
t
d(on)
t
d(on)
10ns
t
r
t
r
1ns
0A
5A
10A
15A
20A
I
C
,
COLLECTOR CURRENT
R
G
,
GATE RESISTOR
Figure 9.
Typical switching times as a
function of collector current
(inductive load,
T
J
=175°C,
Figure 10. Typical switching times as a
function of gate resistor
(inductive load,
T
J
= 175°C,
V
CE
= 400V, V
GE
= 0/15V,
r
G
= 23
Ω,
V
CE
= 400V, V
GE
= 0/15V,
I
C
= 10A,
Dynamic test circuit in Figure E)
Dynamic test circuit in Figure E)
7V
6V
5V
4V
3V
2V
1V
0V
t
d(off)
max.
100ns
10ns
1ns
typ.
t
f
min.
t
d(on)
t
r
25°C 50°C 75°C
100°C 125°C 150°C
-50°C
0°C
50°C
100°C
150°C
T
J
,
JUNCTION TEMPERATURE
T
J
,
JUNCTION TEMPERATURE
Figure 11. Typical switching times as a
Figure 12. Gate-emitter threshold voltage as
a function of junction
temperature
function of junction temperature
(inductive load,
V
CE
= 400V,
V
GE
= 0/15V,
I
C
= 10A,
r
G
=23
Ω,
Dynamic test circuit in Figure E)
(
I
C
= 0.3mA)
6
Rev. 2.1
30.04.2015
IFAG IPC TD VLS
IGB10N60T
p
TRENCHSTOP
™
Series
*)
E
on
and
E
ts
include losses
due to diode recovery
*)
E
on
and
E
ts
include losses
E
ts
*
due to diode recovery
E
ts
*
1,0mJ
0,8mJ
0,6mJ
0,4mJ
0,2mJ
0,0mJ
0,8 mJ
0,6 mJ
0,4 mJ
0,2 mJ
0,0 mJ
E
off
E
off
E
on
*
E
on
*
0A
5A
10A
15A
I
C
,
COLLECTOR CURRENT
R
G
,
GATE RESISTOR
Figure 13. Typical switching energy losses
as a function of collector current
(inductive load,
T
J
= 175°C,
Figure 14. Typical switching energy losses
as a function of gate resistor
(inductive load,
T
J
= 175°C,
V
CE
= 400V, V
GE
= 0/15V,
r
G
= 23
Ω,
Dynamic test circuit in Figure E)
V
CE
= 400V, V
GE
= 0/15V,
I
C
= 10A,
Dynamic test circuit in Figure E)
*)
E
on
and
E
ts
include losses
*)
E
on
and
E
ts
include losses
due to diode recovery
0,8mJ
due to diode recovery
0,6mJ
0,5mJ
0,4mJ
0,3mJ
0,2mJ
0,1mJ
0,0mJ
E
ts
*
0,6mJ
E
ts
*
E
off
0,4mJ
E
off
0,2mJ
E
on
*
E
on
*
0,0mJ
300V 350V 400V 450V 500V 550V
50°C
100°C
150°C
T
J
,
JUNCTION TEMPERATURE
V
CE
,
COLLECTOR
–
EMITTER VOLTAGE
Figure 15. Typical switching energy losses
as a function of junction
Figure 16. Typical switching energy losses
as a function of collector emitter
voltage
temperature
(inductive load,
V
CE
= 400V,
V
GE
= 0/15V,
I
C
= 10A,
r
G
= 23
Ω,
Dynamic test circuit in Figure E)
(inductive load,
T
J
= 175°C,
V
GE
= 0/15V,
I
C
= 10A,
r
G
= 23
Ω,
Dynamic test circuit in Figure E)
7
Rev. 2.1
30.04.2015
IFAG IPC TD VLS
IGB10N60T
p
TRENCHSTOP
™
Series
1nF
C
iss
15V
10V
5V
120V
480V
100pF
C
oss
C
rss
0V
0nC
20nC
40nC
60nC
10pF
0V
10V
20V
Q
GE
,
GATE CHARGE
V
CE
,
COLLECTOR
–
EMITTER VOLTAGE
Figure 17. Typical gate charge
Figure 18. Typical capacitance as a function
of collector-emitter voltage
(
I
C
=10 A)
(
V
GE
=0V,
f
= 1 MHz)
12µs
10µs
8µs
150A
125A
100A
75A
50A
25A
0A
6µs
4µs
2µs
0µs
10V
11V
12V
13V
14V
12V
14V
16V
18V
V
GE
,
GATE
–
EMITTETR VOLTAGE
V
GE
,
GATE
–
EMITETR VOLTAGE
Figure 19. Typical short circuit collector
current as a function of gate-
emitter voltage
Figure 20. Short circuit withstand time as a
function of gate-emitter voltage
(
V
CE
=400V
,
start at
T
J
=
25°C,
T
Jmax
<150°C)
(
V
CE
400V,
T
j
150
C)
8
Rev. 2.1
30.04.2015
IFAG IPC TD VLS
IGB10N60T
p
TRENCHSTOP
™
Series
10
0
K/W
10
-1
K/W
10
-2
K/W
D
=0.5
R
, ( K / W )
0.2911
0.4092
0.5008
0.1529
,
( s )
6.53*10
-2
8.33*10
-3
7.37*10
-4
7.63*10
-5
R
2
0.2
0.1
R
1
0.05
0.02
0.01
C
1
=
1
/
R
1
C
2
=
2
/
R
2
single pulse
10µs
100µs
1ms
10ms 100ms
t
P
,
PULSE WIDTH
Figure 21. IGBT transient thermal
impedance
(
D = t
p
/
T
)
9
Rev. 2.1
30.04.2015
IFAG IPC TD VLS
IGB10N60T
p
TRENCHSTOP
™
Series
PG-TO263-3
10
Rev. 2.1
30.04.2015
IFAG IPC TD VLS
IGB10N60T
p
TRENCHSTOP
™
Series
i,v
t
=t
+
t
S F
di /dt
r r
F
Q
=Q
+
Q
r r
S
F
t
r r
I
t
t
F
S
F
t
Q
10%
I
r r m
Q
S
F
I
r r m
di /dt
V
r r
r r m
R
90%
I
Figure C. Definition of diodes
switching characteristics
1
2
n
r
1
r
2
r
n
T (t)
j
p(t)
r
2
r
1
r
n
Figure A. Definition of switching times
T
C
Figure D. Thermal equivalent
circuit
Figure B. Definition of switching losses
11
Rev. 2.1
30.04.2015
IFAG IPC TD VLS
IGB10N60T
p
TRENCHSTOP
™
Series
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2015 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics.
With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding
the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in
question, please contact the nearest Infineon Technologies Office.
The Infineon Technologies component described in this Data Sheet may be used in life-support devices or systems
and/or automotive, aviation and aerospace applications or systems only with the express written approval of Infineon
Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support,
automotive, aviation and aerospace device or system or to affect the safety or effectiveness of that device or system.
Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and
sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons
may be endangered.
12
Rev. 2.1
30.04.2015
IFAG IPC TD VLS
